Memory element
By forming antioxidant atoms in the top conductor layer of the stacked structure in the three-dimensional NAND flash memory, the problem that the gate conductor layer may form slits is solved, ensuring the normal operation of the memory elements.
CN119697994APending Publication Date: 2025-03-25MACRONIX INTERNATIONAL CO LTD
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Patent Information
- Application Number
- CN202410012051.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-22
- Filing Date
- 2024-01-03
- Publication Date
- 2025-03-25
AI Technical Summary
Technical Problem
In three-dimensional NAND flash memory, the gate conductor layer may form slits, causing electrical problems.
Method used
By forming antioxidant atoms in the top conductor layer of the stacked structure, oxidation of the conductor layer is reduced and the horizontal channel width is avoided, thereby ensuring that the gate conductor layer can be filled into the horizontal channel smoothly.
Benefits of technology
Effectively avoid or reduce the formation of slits in the gate conductor layer to ensure the normal operation of the memory elements.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a memory element. The memory element includes a stop structure, a stack structure, and a partition wall. The stop structure is located above the substrate; a stack structure on the stop structure, wherein the stack structure comprises a plurality of alternating insulating layers and a plurality of conductor layers; a partition wall extends in the stack structure and a portion of the stop structure. The stop structure includes a top layer having a plurality of antioxidant atoms therein. The memory element can be a 3D NAND flash memory with high capacity and high performance.
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