Pixel sensor and preparation method thereof

By forming a mask layer and doped region of a specific thickness on the substrate of the pixel sensor, and adjusting the spacing between the doped region and the gate structure, the problem of GIDL leakage in traditional pixel sensors is solved, and higher image quality and lower power consumption are achieved.

CN119698092AActive Publication Date: 2025-03-25NEXCHIP SEMICON CO LTD
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Patent Information

Application Number
CN202510201025.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-24
Publication Date
2025-03-25
Estimated Expiration
2045-02-24

AI Technical Summary

Technical Problem

During the miniaturization process, traditional pixel sensors are prone to problems such as poor imaging quality, high power consumption and GIDL leakage, resulting in problems such as white dots or bad pixels in the image.

Method used

By providing a pixel unit preparation method, it includes forming a first mask layer with a specific thickness on the substrate and forming a pixel doped region through an ion implantation process, adjusting the horizontal spacing between the doped region and the gate structure to reduce the risk of GIDL leakage.

Benefits of technology

This method effectively reduces the risk of GIDL leakage and dark current in the pixel doped region, improves image quality, reduces the electronic retention problem caused by insufficient transmission, and simplifies the process and reduces process costs.

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Abstract

The invention relates to a pixel sensor, a pixel unit preparation method and electronic equipment, and the method comprises the steps: providing a substrate which comprises an embedded isolation structure, a first region and a second region which are sequentially arranged in a first direction parallel to the top surface of the substrate; the top surface of the substrate in the first region comprises a gate structure; forming a first mask layer which covers the exposed top surface of the substrate and the outer surface of the gate structure and has a first thickness; the first thickness is associated with the working voltage amplitude of the pixel sensor; forming a pixel doping region on the substrate in the second region; the horizontal distance between the pixel doping region and the gate structure is associated with the first thickness; removing a part of the first mask layer, wherein the first mask layer reserved on the top surface of the substrate has a second thickness; and forming a second mask layer covering the first mask layer and the outer surface of the gate structure. The distance from the pixel doping region to the channel is adjusted by changing the thickness of the first mask layer, better GIDL performance is achieved, and influences caused by defects generated in the process are reduced as much as possible.
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