Light emitting diode and light emitting device
By providing a first metal layer with high reflectivity in the second opening of the light emitting diode, the problem of insufficient light luminance of the light emitting diode in the prior art is solved, and higher light luminance and light emitting efficiency are achieved.
CN119698146APending Publication Date: 2025-03-25XIAMEN SANAN OPTOELECTRONICS CO LTD
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Patent Information
- Application Number
- CN202411896667.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-20
- Publication Date
- 2025-03-25
AI Technical Summary
Technical Problem
The light-emitting diodes have insufficient light-emitting brightness, which is difficult to meet the manufacturers' higher requirements for flip-fitting light-emitting diodes.
Method used
By providing a first metal layer with a reflectivity higher than the second metal layer in the second opening, the second metal layer effectively reflects the light emitted by the light emitting layer while maintaining high adhesion, and improves the brightness of the light.
Benefits of technology
The light-emitting brightness of the light emitting diode is improved, and the light rays can be reflected better with a higher reflectivity, thereby enhancing the luminous efficiency.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode and a light-emitting device.The light-emitting diode comprises a semiconductor laminated layer, a transparent conducting layer, a first insulating layer, a first metal layer and a second metal layer, the transparent conducting layer is connected with the second semiconductor layer, and the first insulating layer covers the semiconductor laminated layer and the transparent conducting layer; the first metal layer is located in the second opening and makes contact with the transparent conducting layer, the second metal layer is arranged on the first insulating layer and makes contact with the first insulating layer and the first metal layer, and the reflectivity of the first metal layer is larger than that of the second metal layer. Therefore, the light emitting diode can improve the light emitting brightness, thereby improving the quality of the light emitting diode.
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