Composite material and preparation method thereof, thin film, light-emitting device and display device
By coordinating and connecting with the nitrogen-oxy radical ligand on the surface of the inorganic nanoparticles, the problem of poor carrier transport performance of the inorganic semiconductor nanoparticles thin film is solved, and the conductivity of the light emitting device is improved.
CN119708885APending Publication Date: 2025-03-28TCL TECHNOLOGY GROUP CORPORATION
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Patent Information
- Application Number
- CN202311281995.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-28
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
When the conventional thin film of inorganic semiconductor nanoparticles is energized, surface defects affect carrier transmission performance, resulting in poor conductivity of the light emitting device.
Method used
By strong electron-donating connection between metal hanging bonds on the surface of inorganic nanoparticles and nitrogen-oxygen radical ligands, deep energy level defects are passivated, thereby improving carrier transmission performance.
Benefits of technology
It effectively passivates the deep energy level defects of inorganic nanoparticles, improves the carrier transmission performance, and improves the conductivity of the light emitting device.
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Abstract
The invention discloses a composite material and a preparation method thereof, a thin film, a light-emitting device and a display device. The composite material comprises inorganic nanoparticles and a nitroxide free radical ligand connected to the inorganic nanoparticles. The preparation method of the composite material comprises the steps that an inorganic nano particle solution and a nitroxide free radical ligand are provided, the inorganic nano particle solution comprises inorganic nano particles, and the nitroxide free radical ligand comprises nitroxide free radicals; and mixing the inorganic nanoparticle solution and the nitroxide free radical ligand to obtain the composite material. According to the invention, by utilizing the strong electron donating characteristics of the metal dangling bonds and the nitroxide free radical ligands on the surfaces of the inorganic nanoparticles, the metal dangling coordination on the surfaces of the inorganic nanoparticles is connected with the nitroxide free radical ligands, so that deep energy level defects can be passivated, the carrier transport performance of the inorganic nanoparticles is improved, and the performance of the light-emitting device is improved.
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