Measurement method and measurement system, and device reliability evaluation method and evaluation system

By applying a reverse bias voltage between the source, drain and substrate well ends of the PMOS device, and measuring the charge pump current according to specific gate pulse parameters, the problem of inaccurate charge pump testing methods is solved, and the accuracy and reliability of NBTI evaluation is improved.

CN119716437APending Publication Date: 2025-03-28QINGDAO AUCMA YUNLIAN INFORMATION TECHNOLOGY CO LTD
0 Cites 0 Cited by

Patent Information

Application Number
CN202311250159.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-09-26
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The current charge pump current measured by the existing charge pump test methods is inaccurate, which affects the accuracy of the PMOS NBTI evaluation results.

Method used

By applying a reverse bias voltage between the source, drain and well ends of the device to be tested, the space charge region is widened, the influence of geometric current is reduced, and the gate pulse parameters are determined based on the threshold voltage and flat band voltage, and the charge pump current at different pulse voltages is measured to calculate the number of traps at the gate oxygen interface.

Benefits of technology

The accuracy of the charge pump current obtained by the charge pump test is improved, thereby improving the accuracy of the number of traps at the gate oxygen interface and ensuring the reliability of the PMOS NBTI evaluation results.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The invention provides a measuring method, a measuring system, a device reliability evaluation method and an evaluation system, which are used for measuring the trap number of a gate-oxide interface and evaluating the performance of the device, corresponding reverse bias voltage is applied between a source end and a drain end of a to-be-measured device (such as a PMOS (P-channel Metal Oxide Semiconductor)) and a bulk end of a substrate, so that a space charge region between the source end and the drain end and the bulk end of the substrate is broadened, and the reliability of the device is improved. The threshold voltage Vt of the device to be measured is increased, and the effective channel length is shortened due to the broadening of a space charge region, so that the effective rise time of a grid pulse acting on the device to be measured is prolonged, the time left for hole diffusion is also prolonged, the path of a hole returning to a drain end and a source end is shortened, the geometric current IGE component in the charge pump current Icp is reduced, and the reliability of the device to be measured is improved. And the accuracy of the trap number of the gate-oxide interface obtained based on the charge pump current Icp is improved, so that the reliability of the NBTI effect evaluation result of the device to be tested is ensured.
Need to check novelty before this filing date? Find Prior Art