Adaptive target control for curvilinear optical proximity correction (OPC)
By applying optical proximity correction technology in circuit design and adjusting the amplitude of the photomask, the problem of inaccurate image reproduction caused by optical proximity effect during lithography is solved, and higher image resolution and manufacturing quality are achieved.
Patent Information
- Application Number
- CN202411353321.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-27
- Filing Date
- 2024-09-26
- Publication Date
- 2025-03-28
AI Technical Summary
As the size of circuit components decreases, the optical proximity effect during lithography leads to inaccurate image reproduction and defects, and the prior art is difficult to effectively solve this problem.
Optical proximity correction (OPC) technology is used to modify layout design data, adjust the amplitude of the photomask, compensate for the light diffraction effect, and improve the fidelity of the graphics. The specific method includes curve OPC, determining whether the image is on the target by measuring the position, and generating a curved target to correct edge placement errors.
The image resolution and accuracy during lithography are significantly improved, the optical proximity effect is reduced, and the quality of the manufacturing device is improved.