IGBT device
By introducing a PIN diode structure into the terminal area of the IGBT device, the problem of insufficient breakdown voltage resistance when the chip thickness is thin, and the device's avalanche breakdown ability is significantly improved.
CN119730269APending Publication Date: 2025-03-28SHANGHAI DINGYANGTONG SEMICON TECH CO LTD
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Patent Information
- Application Number
- CN202411859460.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-17
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
When the chip thickness is thin, the breakdown voltage (BV) resistance is poor, and avalanche breakdown is prone to occur, resulting in the device failure prematurely.
Method used
A second conductive type doped well region is introduced into the terminal region of the IGBT device, and a first conductive type doped first back contact region is formed on the back of the drift region. These structures form a PIN diode to improve the avalanche breakdown voltage resistance of the terminal region.
Benefits of technology
By introducing a PIN diode structure, the breakdown voltage (BV) tolerance of IGBT devices is significantly improved, reducing the risk of avalanche breakdown, and is more effective especially when the chip thickness is thin.
✦ Generated by Eureka AI based on patent content.
Abstract
According to the IGBT device, a plurality of primitive cells are formed in an active region, a terminal structure is formed in a terminal region, and the terminal region surrounds the peripheral side of the active region. A second conductivity type doped well region is formed in a selected region of the drift region. A drift region doped with a first conductivity type is provided in each of the active region and the termination region. A first conductive type doped first back contact region formed on the back of the drift region is included in a partial region of the terminal region. And a heavily doped collector region of the second conductive type is formed on the back surface of the drift region outside the first back surface contact region. And a collector consisting of a back metal layer is formed on the back surfaces of the first back contact region and the collector region. A PIN diode is formed in the terminal region, the well region, the drift region and the first back contact region, and the avalanche breakdown resistance and voltage resistance of the terminal region are improved through the PIN diode. According to the invention, the BV test resistance of the device, especially a thin IGBT device, can be improved.
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