Transverse RC-IGBT and preparation method thereof

By introducing the first drain as the cathode of the freewheeling diode in the transverse RC-IGBT, the problem of reducing the number of hole carriers in the P+ region in the traditional RC-IGBT is solved, and the independence and process compatibility of the forward conductive channel of the IGBT are achieved.

CN119730273APending Publication Date: 2025-03-28YANGZHOU YANGJIE ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202411996027.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-31
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

Traditional RC-IGBTs have problems with increasing parasitic parameters and increasing power loss between the IGBT and the diode. When integrating the diode freewheeling channel, the hole carriers injected in the P+ region will be greatly reduced compared to the normal IGBT devices, affecting the forward flow capability.

Method used

By introducing the first drain as the cathode of the freewheeling diode in the transverse RC-IGBT, the freewheeling conductive channel of the IGBT is separated from the freewheeling conductive channel of the freewheeling diode, thereby avoiding the problem of reducing the number of hole carriers injected into the P+ region.

Benefits of technology

The independence of the forward conductive channel of IGBT is achieved, avoiding the problem of reducing the number of hole carriers injected in the P+ region. At the same time, the process steps are simple and fully compatible with the commercial IGBT preparation process.

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Abstract

The invention relates to the technical field of semiconductors, in particular to a transverse RC-IGBT and a preparation method thereof. According to the invention, the first drain electrode is introduced as the cathode of the fly-wheel diode, so that the IGBT forward conductive channel is separated from the fly-wheel conductive channel of the fly-wheel diode, the IGBT forward conductive channel can enter the source electrode only through the second drain electrode and the P + region, and the number of hole carriers injected into the P + region is not influenced; the freewheeling conductive channel of the freewheeling diode can enter the N + region and the first drain through the voltage-withstanding layer and cannot enter the P + region to cause other electrical influences, compared with the published related patent, the problem that hole carriers injected into the P + region are greatly reduced relative to a normal IGBT device cannot be caused, the process steps are simple, and the cost is low. Only one process step needs to be added, wherein the first drain electrode is introduced to serve as the cathode of the fly-wheel diode, and the process is completely compatible with the existing commercial IGBT preparation process.
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