SiC MOSFET device and preparation method thereof

By introducing a groove gate injection region structure into the trench type SiC MOSFET device, modulating the internal electric field of the device, solving the problems of premature breakdown and gate oxygen breakdown, and improving the device's conductivity and reliability.

CN119730316APending Publication Date: 2025-03-28NARI LIANYAN SEMICON CO LTD +1
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Patent Information

Application Number
CN202411700233.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-26
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

Due to the electric field aggregation effect at the bottom corner of the trench SiC MOSFET devices, the device is prone to premature breakdown or even burning, and the gate oxygen breakdown risk is high, affecting the device's conductivity.

Method used

The groove gate injection region structure is introduced, and by forming the injection region and gate trench in the trench-type SiC MOSFET device, the internal electric field of the device is modulated, the risk of gate oxygen breakdown is reduced, and the effective conduction area of ​​the device is increased.

Benefits of technology

Effectively modulate the internal electric field of the device, avoid gate oxygen breakdown, improve device reliability and conduction capabilities, reduce system power consumption, and improve device performance advantages.

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Abstract

The invention discloses a SiC MOSFET device and a preparation method thereof, and the device comprises a substrate, an epitaxial layer located above the substrate, a drain electrode located below the substrate, a current expansion region located in the epitaxial layer, a well region located above the current expansion region, a source region located in the well region, and a body region located in the source region. The grooves are formed in the two ends of the epitaxial layer, the gate groove is formed in the center of the epitaxial layer, the gate dielectric layer is located in the grooves and the gate groove, the polycrystalline silicon is located on the surface of the gate dielectric layer, and the passivation layer is located on the upper surface of the epitaxial layer. The trench gate injection region is introduced into the MOSFET device and can be used for modulating an internal electric field of the device, so that gate-oxide breakdown is protected, meanwhile, the effective conduction area of the device can be increased, and the conduction capability of the device is improved. The device structure and the preparation method are simple, the effect is remarkable, high-performance and batch preparation and production of the groove type SiC MOSFET device can be achieved, and the device has huge market potential and wide application prospects.
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