Stacked integrated circuit device

By adopting a combined design of multiple nanosheet stacking structures, sheet-shaped separation walls, multiple cladding patterns and gate electrodes in integrated circuit devices, the problem of difficult improvement in the operation characteristics of multi-gate MOSFETs in the prior art is solved, and better charge management and channel performance are achieved.

CN119730367APending Publication Date: 2025-03-28SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
CN202410828022.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-09-25
Filing Date
2024-06-25
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

In the process of reducing size and improving integration, existing integrated circuit devices are difficult to further improve performance, especially in terms of the operating characteristics of multi-gate MOSFETs.

Method used

An integrated circuit device design including multiple nanosheet stacking structures, sheet-like separation walls, multiple cladding patterns and gate electrodes is adopted. Through the combination of these structures, the operation characteristics of the multi-gate MOSFET are improved.

Benefits of technology

Through this design, the operation characteristics of integrated circuit devices can be improved, charge traps can be reduced, channel leakage current and effective channel length can be improved, thereby improving overall performance.

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Abstract

Provided is an integrated circuit device including: a base substrate layer; a sheet-like separation wall extending in a first horizontal direction on the base substrate layer; a pair of nanosheet stacked structures including a sheet-like separation wall therebetween and separated from each other in a second horizontal direction, the second horizontal direction being different from the first horizontal direction, each of the pair of nanosheet stacked structures including a plurality of nanosheets; a plurality of cladding patterns between a first end of each of a plurality of nanosheets included in each of the pair of nanosheet stacked structures and the sheet-like separation wall; and a pair of gate electrodes extending in a second horizontal direction on the pair of nanosheet stacked structures.
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