Preparation method of solar cell
Through laser technology, the doped layer in the back metal region is crystallized and oxidized, and the doped layer in the non-metal region is removed by chemical etching, the problem of the thickness of the doped polysilicon layer on the back of the TOPCon solar cell is limited, achieving efficient SE structure preparation, and improving cell efficiency and double-sided rate.
CN119730450APending Publication Date: 2025-03-28扬州阿特斯太阳能电池有限公司 +2
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Patent Information
- Application Number
- CN202411841547.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-04-28
- Filing Date
- 2024-12-13
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
TOPCon solar cells are limited in the thickness of the doped polysilicon layer on the back and cannot be further thinned, resulting in limited battery efficiency and double-sided ratio.
Method used
The second doped layer in the back metal region is crystallized and oxidized by laser technology, and the doped layer in the non-metal region is removed by chemical etching process, retaining the tunneling layer and doped layer in the metal region to prepare an efficient SE structure.
Benefits of technology
The process flow is simplified, the battery efficiency and double-sided rate are improved, the passivation effect is taken into account and parasitic absorption is reduced, and the process window is expanded.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses a preparation method of a solar cell, and the method comprises the following steps: providing a silicon substrate which comprises a first surface and a second surface which are oppositely arranged, and the second surface comprises a first region and a second region; preparing a tunneling layer and a second doping layer which are stacked in sequence on the second surface; processing the second doping layer on the first region by adopting a laser process, crystallizing the second doping layer on the first region, and forming an oxide layer on the surface of the second doping layer on the first region; removing the second doping layer on the second region and the oxide layer on the first region by adopting a chemical etching process, and reserving the tunneling layer and the second doping layer on the first region; and preparing a second electrode in contact with the second doped layer on the first region. The passivation effect can be considered, parasitic absorption can be reduced, and the cell efficiency and the double-sided rate are remarkably improved while the process window is improved.
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