Light emitting diode and light emitting device
By forming a second connecting electrode at the opening of the insulating reflective layer of the light emitting diode, combining the transparent adhesive layer and the reflective layer, the problem that the electrode structure in the prior art cannot achieve good ohmic contact and ODR structure at the same time is solved, and the light output effect and electrical performance of the light emitting diode are improved.
CN119730499APending Publication Date: 2025-03-28QUANZHOU SANAN SEMICON TECH CO LTD
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Patent Information
- Application Number
- CN202411562214.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-04
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
The existing light emitting diode electrode structure cannot simultaneously form good ohmic contact with ITO and combine with DBR to form good ODR structure, affecting the brightness and voltage of the chip.
Method used
The insulating reflective layer is covered above the semiconductor stack, and a second connecting electrode is formed at its opening, the second opening of the insulating reflective layer is filled, and a transparent adhesive layer and a reflective layer are included to achieve good ohmic contact and light reflection.
Benefits of technology
The light-emitting effect and electrical performance of the light emitting diode are improved, while the optical performance is enhanced, forming a total reflective structure to improve quantum efficiency.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a light emitting diode and a light emitting device, the light emitting diode comprises a semiconductor lamination layer, an insulation reflection layer and an electrode structure, a first opening and a second opening are formed in the insulation reflection layer, and a second electrode in the electrode structure comprises a second connection electrode. In the direction gradually away from the insulating reflecting layer, the second connecting electrode at least comprises a transparent adhesion layer and a reflecting layer located above the transparent adhesion layer. The transparent adhesive layer is a transparent material layer, and further can be a material layer the same as that of the current diffusion layer above the second semiconductor layer, so that the transparent adhesive layer can form good adhesion with the current diffusion layer. And the reflecting layer comprises the Ag layer with high reflectivity, so that a reflecting effect can be achieved, and the light emitting effect of the light emitting diode is improved. And meanwhile, the second connecting electrode can form good ohmic contact with the transparent adhesion layer and the current diffusion layer, so that the electrical property of the light emitting diode is improved.
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