Preparation of PVA-based hydrogel diode
By doping polyelectrolytes in PVA and processing through freeze-thaw cycles, a high-strength hydrogel PN junction is constructed, which solves the problem of insufficient strength of hydrogel materials in the field of biomedical science, and realizes a high-performance ionic diode material suitable for biomedical applications.
CN119730540APending Publication Date: 2025-03-28BEIJING HANTONG TECHNOLOGY CO LTD
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Patent Information
- Application Number
- CN202411806095.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-10
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
The existing hydrogel materials are difficult to apply to osteocartilage tissue repair materials due to their insufficient strength in the field of biomedical science, and ionic diode materials are relatively lacking in research in the field of biomedical science.
Method used
By doping polyelectrolytes with different electrical properties inside the PVA, P-type ionic semiconductor PVA-CS and N-type ionic semiconductor PVA-SA were constructed, and a high-strength hydrogel PN junction was formed by freeze-thaw cycling.
Benefits of technology
A hydrogel with high strength, swelling resistance and high conductivity has rectifier characteristics and bidirectional asymmetry of current, and is suitable as an implantable intelligent biological material.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses preparation of a PVA-based hydrogel diode, and belongs to the technical field of gel soft materials. The PVA-based hydrogel diode disclosed by the invention comprises PVA-based hydrogel with positive electricity and PVA-based hydrogel with negative electricity; the positively charged monomer in the positively charged PVA-based hydrogel is chitosan, and the negatively charged monomer in the negatively charged PVA-based hydrogel is sodium alginate. Polyelectrolytes with different electrical properties are doped in PVA, a P-type ion semiconductor PVA-CS and an N-type ion semiconductor PVA-SA are constructed, the forming mode of hydrogel and the corresponding diode-like rectification characteristic are explored, and the integrally-formed hydrogel PN junction is further constructed on the basis of the doping.
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