Schottky barrier field effect transistor biosensor with concave channel

By adopting a concave channel structure in Schottky barrier field effect transistor biosensor, the problems of traditional biosensors in high thermal budget, carrier diffusion and low current switching ratio are solved, and higher current switching ratio and detection sensitivity are achieved, which improves the operating speed of the device and reduces power consumption.

CN119730541APending Publication Date: 2025-03-28XIDIAN UNIV +1
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Patent Information

Application Number
CN202411903025.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-23
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

Traditional MOSFET and TFET biosensors have many design challenges, including high thermal budgets, non-ideal mutation structures caused by carrier diffusion, low drain current and low current switching ratios, limiting the device's operating speed and response speed.

Method used

Using a Schottky barrier field effect transistor biosensor with a concave channel, the area of ​​Schottky contact is increased by setting a concave channel between the source and drain, the probability of Schottky tunneling is increased, and the fluctuation of device performance with doping is reduced by optimizing materials and structures.

Benefits of technology

The current switching ratio of the biosensor and the sensitivity of detecting biological molecules are improved, the device's operating speed is increased, and power consumption is reduced.

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Abstract

A Schottky barrier field effect transistor biosensor with a concave channel comprises the concave channel, one side of the concave channel is connected with a source electrode, the other side of the concave channel is connected with a drain electrode, the inner face and the bottom face of the concave channel are each provided with a gate dielectric layer, and the side, close to the source electrode, of each gate dielectric layer is provided with a biomolecule detection cavity 6. Gate metal is arranged on the surfaces of the gate dielectric layer and the biomolecule detection cavity; the concave channel is adopted, and the source electrode and the drain electrode are oppositely arranged on the two sides of the concave channel, so that the contact area of the source electrode and the channel is increased, namely, the Schottky contact area is increased, and the Schottky tunneling occurrence probability is increased; the fluctuation of device performance along with doping is reduced, the current on-off ratio of the biosensor is improved, and the sensitivity of the field effect transistor for detecting biomolecules is improved.
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