Half-bridge switch node capable of shielding input voltage and ground
By introducing a shielding electrode between the first electrode and the second electrode of the semiconductor device and coupling to the third voltage, the problem of creepage requirements at high frequencies and high voltages is solved, and a smaller device size and a reduced fire risk effect is achieved.
CN119732203APending Publication Date: 2025-03-28SIGNIFY HOLDING BV
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Patent Information
- Application Number
- CN202380059338.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-09-13
- Filing Date
- 2023-08-07
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
At high operating frequencies and relatively high voltages, semiconductor devices are susceptible to creepage requirements, resulting in unnecessary operation of the circuit and fire risk.
Method used
The creepage distance is increased by introducing a shield electrode between the first electrode and the second electrode of the semiconductor device and coupling it to a third voltage between the first voltage and the second voltage.
Benefits of technology
Effectively reduces the total creepage distance, allowing semiconductor devices to become smaller when operating at higher voltages and frequencies, reducing fire risk.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention relates to a half-bridge switching node shielding input voltage and ground. A semiconductor device includes: a semiconductor switching element; a semiconductor device package for packaging the semiconductor switching element; a first electrode for supplying a first voltage to the semiconductor switching element; a second electrode for providing a second voltage to the semiconductor switching element, where the first voltage is greater than the second voltage when the semiconductor switching element is turned off, where the first electrode and the second electrode are mounted on one side of the semiconductor device package and adapted to be soldered to a printed circuit board, wherein the semiconductor device further includes a first shield electrode, where the shield electrode is placed between the first electrode and the second electrode, and where the shield electrode is coupled to a third voltage less than the first voltage and greater than the second voltage, and positioned such that a creepage distance between the first electrode and the second electrode increases.
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