Charging device and single crystal furnace

By using a feeding device in a single crystal furnace, the feeding time of antimony dopant is controlled to avoid its volatility during the melting of silicon material, the problem of unstable crystal resistivity is solved, and the production quality and yield rate are improved.

CN119753816APending Publication Date: 2025-04-04JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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Patent Information

Application Number
CN202411959565.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-27
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

During the crystal drawing process of photovoltaic solar silicon wafers, antimony dopants are prone to evaporate during heating, resulting in unstable crystal resistivity and unable to meet customer needs.

Method used

A feeding device is designed, including the device body, carrier plate and push rod. Through the design of the accommodating chamber and open opening, the time when materials are added to the single crystal furnace is controlled to avoid the evaporation of the material during the melting of the silicon material.

Benefits of technology

The production quality of the crystal is improved, so that the crystal resistivity obtained by production is stable and the yield rate is improved.

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Abstract

The present invention discloses a feeding device and a single crystal furnace, wherein the feeding device comprises: a device body, wherein the device body has a storage bin, the storage bin extends along the length direction of the device body, and one end of the storage bin along the length direction of the device body is open to form an open opening; a carrier plate, wherein the carrier plate extends along the length direction of the device body and at least a portion of the carrier plate is disposed in the storage bin, and the upper end surface of the carrier plate is used to hold materials, and the carrier plate is movable in the length direction of the device body, and one end of the carrier plate can extend out of or retract into the storage bin through the open opening; and a push rod, wherein the push rod extends along the length direction of the device body and at least a portion of the push rod is disposed in the storage bin, the push rod is located above the carrier plate, the push rod is movable along the length direction of the device body, and the push rod is used to push the materials on the carrier plate away from the carrier plate when moving in the direction toward the open opening. According to the feeding device of the present invention, the evaporation of materials during the melting process of silicon materials can be avoided, the production quality of crystals is improved, and the yield rate is improved.
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