High-efficiency low-loss barium titanate electro-optical modulator chip and preparation method thereof

By adopting a multi-layer material structure of barium titanate and silicon nitride in the electro-optical modulator chip, the transmission and modulation of optical signals are achieved by using inter-layer coupling, which solves the problems of high driving voltage and high energy consumption of existing electro-optical modulators, and low-loss and high-efficiency optical signal processing is achieved.

CN119758621AActive Publication Date: 2025-04-04BEIJING UNIV OF POSTS & TELECOMM
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Patent Information

Application Number
CN202411971299.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-04-04
Estimated Expiration
2044-12-30

AI Technical Summary

Technical Problem

The driving voltage and energy consumption of existing electro-optical modulators have high driving voltage and high energy consumption, resulting in low modulation efficiency and low bandwidth limit.

Method used

The barium titanate electro-optical modulator chip with a multi-layer material structure, including a barium titanate film layer and a silicon nitride film layer, realizes the transmission and modulation of optical signals through interlayer coupling, and utilizes the high electro-optical coefficient of the barium titanate waveguide and the low loss characteristics of the silicon nitride waveguide.

Benefits of technology

Low-loss and high-efficiency optical signal transmission and modulation are achieved, driving voltage and energy consumption are reduced, and modulation efficiency is improved.

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Abstract

The invention relates to the technical field of photoelectric device preparation, in particular to a high-efficiency low-loss barium titanate electro-optical modulator chip and a preparation method thereof.The barium titanate electro-optical modulator chip comprises a substrate layer, a buffer thin film layer, a barium titanate thin film layer, a first protection layer, a silicon nitride thin film, a second protection layer and two electrodes; a multilayer waveguide material structure of silicon nitride and barium titanate is formed by a barium titanate waveguide on a barium titanate thin film layer and a silicon nitride waveguide of a silicon nitride thin film, light transmission is carried out based on the low-loss characteristic of the silicon nitride waveguide, and during modulation, an optical signal enters the barium titanate waveguide through interlayer coupling of the silicon nitride waveguide and the barium titanate waveguide; an electric field is applied through an electrode to change the refractive index of the barium titanate waveguide, signal modulation is carried out based on the high electro-optical coefficient characteristic of the barium titanate waveguide, after modulation is completed, the signals enter the silicon nitride waveguide to be transmitted, the modulated optical signals are output, low loss of the electro-optical modulator chip in the optical signal transmission process is achieved, and the modulation efficiency of the optical signals is improved.
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