Diamond dielectric diode formed by utilizing strontium titanate and preparation method of diamond dielectric diode
By introducing a strontium titanate dielectric layer into the diamond diode, the problem of premature reverse breakdown of the diamond diode is solved, and the effect of significantly improving the reverse breakdown voltage is achieved.
CN119767691APending Publication Date: 2025-04-04HARBIN INST OF TECH +2
0 Cites 0 Cited by
Patent Information
- Application Number
- CN202411870230.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-18
- Publication Date
- 2025-04-04
AI Technical Summary
Technical Problem
Existing diamond diodes are prone to premature breakdown under reverse bias, resulting in insufficient voltage resistance.
Method used
By introducing a strontium titanate dielectric layer into the diamond diode, a diamond dielectric diode is formed, which effectively reduces the concentration of the surface electric field and increases the reverse breakdown voltage.
Benefits of technology
Without affecting the forward conduction performance, the reverse breakdown voltage of the diamond diode is significantly improved, and the reverse voltage withstand capability is increased by 140%.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses a diamond dielectric diode formed by utilizing strontium titanate and a preparation method of the diamond dielectric diode, and aims to solve the problem that an existing diamond diode is broken down too early in the reverse direction. The diamond dielectric diode formed by strontium titanate comprises an ohmic contact electrode, a boron-doped diamond substrate, a diamond intrinsic epitaxial layer, a strontium titanate dielectric layer and a metal electrode, and the diamond intrinsic epitaxial layer is deposited on the boron-doped diamond substrate. A metal film layer is deposited on the lower surface of the boron-doped diamond substrate to serve as an ohmic contact electrode, a strontium titanate dielectric layer is deposited on the diamond intrinsic epitaxial layer, and a metal electrode is deposited on the strontium titanate dielectric layer. In the diamond dielectric diode, the valence band difference value of a dielectric junction formed by strontium titanate and diamond is only 0.14 eV, and the forward conductivity of the diode is hardly influenced. As a high-dielectric-constant material, strontium titanate can effectively reduce the situation of electric field concentration on the surface of the diamond, and the reverse breakdown performance of the diamond diode is greatly improved.
Need to check novelty before this filing date? Find Prior Art