A mercury cadmium telluride avalanche photomultiplier and its preparation method

By using etching and injection processes in the avalanche photomultiplier of mercury tellurium avalanche photomultiplier, the electrode holes and doping are achieved, and the bowl-shaped structure is designed to alleviate edge-angle breakdown, which solves the problems of edge-angle breakdown and complex process in the prior art devices under high bias voltage, and achieves lower dark current and high breakdown voltage.

CN119767814APending Publication Date: 2025-04-0411TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
1 Cites 0 Cited by

Patent Information

Application Number
CN202411892871.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-20
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

The existing mercury cadmium tellurium avalanche photomultipliers work under high bias voltage, which are prone to edge and corner breakdown, and the preparation process is complex, with high requirements for process alignment accuracy and etch uniformity, which limits the design and performance of the device.

Method used

The electrode holes and doping are achieved through the etching and injection process, and the electrical connection between the cells and the readout circuit is achieved through the electrodes and interconnected indium columns. A bowl-shaped structure is designed to alleviate edge and corner breakdown and simplify the process flow.

Benefits of technology

Low dark current is achieved, breakdown voltage is increased, process flow is simplified, the impact of etching uniformity on performance is reduced, and edge breakdown problem is alleviated.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The present invention relates to the field of infrared detector technology, and in particular to a mercury cadmium telluride avalanche photomultiplier and a preparation method thereof, including a readout circuit, an interconnection structure, and a mercury cadmium telluride avalanche photomultiplier array formed by electrically connecting a plurality of pixel units, wherein the pixel unit includes an electrode, a passivation layer, and a bowl-shaped substrate structure, wherein the passivation layer is provided with a through hole, the bowl-shaped substrate structure is arranged on one side of the passivation layer, the electrode covers the through hole in the passivation layer, and realizes ohmic contact with the bowl-shaped substrate structure through the through hole; the readout circuit is arranged on the other side of the passivation layer, and the electrode is connected to the readout circuit through an interconnection structure. The present invention realizes a lower dark current through a lower substrate carrier concentration and a laterally extended depletion region structure, alleviates the edge breakdown problem of longitudinal extension after injection, improves the breakdown voltage, and has a larger geometric fill factor.
Need to check novelty before this filing date? Find Prior Art