A Micro LED pixel point for solving lateral etching and a preparation method thereof
By increasing the ratio of Ar2 and N2 gases during the etching process of Micro LED devices, the passivation layer is formed, and the lateral etching problem is solved, high etch selection ratio and side wall smoothness are achieved, and the luminous power of Micro LED is improved.
CN119767916AActive Publication Date: 2025-04-04WEIJIU (SUZHOU) OPTOELECTRONICS TECHNOLOGY CO LTD
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Patent Information
- Application Number
- CN202510238558.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-03
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2045-03-03
AI Technical Summary
Technical Problem
During the etching process of Micro LED devices, there is a problem of lateral etching, which affects the continuity of the current expansion layer, which in turn affects the ohmic contact electrical performance and photoelectric conversion efficiency.
Method used
By changing the mask preparation method, the ratio of Ar2 and N2 gases in the Cl2/BCl3 etching process is increased, and a passivation layer is formed to improve the etch selection ratio and side wall smoothness, and to avoid lateral etching.
Benefits of technology
The Micro LED pixel points with high etch selection ratio, smooth sidewalls, and no lateral etching are achieved, which improves the smoothness of subsequent processes and the luminous power of Micro LEDs.
✦ Generated by Eureka AI based on patent content.
Abstract
A Micro LED pixel point that solves lateral etching and a preparation method thereof, belonging to the technical field of semiconductor devices and their processing technology. The present invention changes the preparation method of the mask, adds two gases, Ar2 and N2, on the basis of the etching gas Cl2 / BCl3, and after adjusting the optimal ratio, the etching selectivity ratio of SiO2 to AlGaInP can be increased from 5:1 to more than 15:1, and no lateral etching problem will occur during the etching process, thereby obtaining a pixel point with high selectivity, smooth sidewalls, and no lateral etching. The present invention solves the problem of N + The serious lateral etching problem of GaAs heavily doped layer and P-type GaP layer during the etching process solves the problem of discontinuous coverage of the subsequent passivation layer due to lateral etching, and can effectively improve the roughness of the etching side wall and bottom, greatly increasing the etching selectivity of the hard mask, thereby improving the luminous efficiency of Micro LED.
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