Micro-led display device and display panel

Abstract

The application discloses a Micro-LED display device and a display panel, the Micro-LED display device comprises a substrate, an integrated circuit layer, an LED light-emitting layer and a lenticular lens device. The integrated circuit layer is arranged on one side of the substrate. The LED light-emitting layer is arranged on one side of the integrated circuit layer and is electrically connected to the integrated circuit layer. The lenticular lens device is arranged on the side, away from the integrated circuit, of the LED light-emitting layer, and the lenticular lens device is used for converting light emitted by the LED light-emitting layer into collimated light and emitting the collimated light. An optical device does not need to be additionally arranged outside the Micro-LED display device to shape the light, so that the loss of the light in the optical device is avoided, the light conversion efficiency of the whole optical system is improved, the weight of the module is reduced, and the light and thin module is beneficially realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a Micro-LED display device and a display panel. BACKGROUND

[0002] At present, Micro-Light Emitting Diode (Micro-LED) display is to form a Micro-LED array with micron-level spacing after miniaturizing the traditional LED to achieve super-high-density pixel resolution. Micro-LED display has the characteristics of self-luminous, and the display color is easier to accurately debug, has a longer light-emitting life and higher brightness, and is more lightweight and power-saving. Due to the characteristics of high-density small size and super-pixel, Micro-LED display will become the leader of the third-generation display technology with high reality, interaction and personalized display as the main features.

[0003] Virtual reality (VR) and augmented reality (AR) are important fields of application of Micro-LED, and Micro-LED is considered to be the most promising candidate for the next generation of augmented / virtual reality display devices. In order to make AR glasses smaller, thinner and lighter, and reach the level of consumer technology, the industry currently tends to use optical waveguide solutions, but the efficiency of the optical waveguide is low, and before entering the optical waveguide structure, the light needs to be shaped and combined by optical devices, so that the originally Lambertian emitted light is emitted in parallel, but the optical device has serious light loss, and the efficiency of beam shaping is usually only about 10-50%, resulting in low light conversion efficiency. SUMMARY

[0004] The present application provides a Micro-LED display device and a display panel, which can solve the technical problem of low light conversion efficiency of the existing Micro-LED display device and display panel.

[0005] The present application provides a Micro-LED display device, comprising:

[0006] a substrate;

[0007] an integrated circuit layer arranged on one side of the substrate;

[0008] an LED light-emitting layer arranged on a side of the integrated circuit layer away from the substrate and electrically connected to the integrated circuit layer; and

[0009] a lenticular device arranged on a side of the LED light-emitting layer away from the substrate, the lenticular device being configured to convert light emitted by the LED light-emitting layer into collimated light.

[0010] The Micro-LED display device provided by the application, the LED light-emitting layer comprises an epitaxial stack structure, and the epitaxial stack structure comprises:

[0011] A first epitaxial layer is arranged on one side of the integrated circuit layer and is used for emitting first color light;

[0012] A second epitaxial layer is arranged on the side of the first epitaxial layer away from the substrate and is bonded to the first epitaxial layer, and the second epitaxial layer is used for emitting second color light; and

[0013] A third epitaxial layer is arranged on the side of the second epitaxial layer away from the substrate and is bonded to the second epitaxial layer, and the third epitaxial layer is used for emitting third color light.

[0014] The lenticular lens device is arranged on the side of the third epitaxial layer away from the substrate and is used for converting the first color light, the second color light and the third color light into collimated light.

[0015] The Micro-LED display device provided by the application, the lenticular lens device comprises a first lens and a second lens, and the distance from the side surface of the substrate close to the first lens to the third epitaxial layer is smaller than the distance from the side surface of the substrate close to the second lens to the third epitaxial layer.

[0016] The refractive index of the first lens is greater than the refractive index of the second lens.

[0017] The Micro-LED display device provided by the application, the second lens is arranged on the side of the first lens away from the substrate.

[0018] The Micro-LED display device provided by the application, the second lens is arranged inside the first lens, and the first lens and the second lens form a core-shell coated structure.

[0019] The Micro-LED display device provided by the application, the refractive index of the first lens ranges from 1.4 to 1.5, and the refractive index of the second lens ranges from 1.7 to 2.0.

[0020] The Micro-LED display device provided by the application, the first color light is red light, the second color light is green light, and the third color light is blue light.

[0021] According to the Micro-LED display device provided by the application, the second epitaxial layer is located in the projection of the first epitaxial layer on the substrate, and the third epitaxial layer is located in the projection of the second epitaxial layer on the substrate.

[0022] According to the Micro-LED display device provided by the application, the Micro-LED display device further comprises:

[0023] The first flat layer is arranged on the side of the LED light-emitting layer away from the substrate, and a groove is arranged on the side surface of the first flat layer away from the substrate, and at least part of the lenticular lens device is arranged in the groove.

[0024] The second flat layer is arranged on the side of the first flat layer and the lenticular lens device away from the substrate.

[0025] The application provides a display panel comprising a plurality of Micro-LED display devices arranged in an array.

[0026] Beneficial effects: In the Micro-LED display device and the display panel provided by the application, the lenticular lens structure is arranged on the side of the LED light-emitting layer away from the integrated circuit, and the collimation characteristics of the lenticular lens device are used to convert the light emitted by the LED light-emitting layer into collimated light, without the need to additionally arrange an optical device outside the Micro-LED display device to shape the light, thereby avoiding the loss of light in the optical device, improving the light conversion efficiency of the entire optical system, reducing the weight of the module, and being conducive to realizing the lightness and thinness of the module. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative labor.

[0028] Figure 1 The first cross-sectional structure of the Micro-LED display device provided by the embodiment of the application is shown in the figure.

[0029] Figure 2 The second cross-sectional structure of the Micro-LED display device provided by the embodiment of the application is shown in the figure.

[0030] Figure 3 The partial light path of the Micro-LED display device in the figure is shown in the figure. Figure 2 ​

[0031] Figure 4 A third cross-sectional structure schematic diagram of a Micro-LED display device provided by an embodiment of the present application;

[0032] Figure 5 A partial light path schematic diagram of a Micro-LED display device in Figure 4

[0033] Figure 6A A first cross-sectional structure schematic diagram of a lenticular lens device provided by an embodiment of the present application;

[0034] Figure 6B A second cross-sectional structure schematic diagram of a lenticular lens device provided by an embodiment of the present application;

[0035] Figure 6C A third cross-sectional structure schematic diagram of a lenticular lens device provided by an embodiment of the present application;

[0036] Figure 6D A fourth cross-sectional structure schematic diagram of a lenticular lens device provided by an embodiment of the present application;

[0037] Figure 7 A fourth cross-sectional structure schematic diagram of a Micro-LED display device provided by an embodiment of the present application;

[0038] Figure 8 A flowchart of a preparation method of a Micro-LED display device provided by an embodiment of the present application;

[0039] Figures 9A-9I A flowchart structure schematic diagram of a preparation method of a Micro-LED display device provided by an embodiment of the present application;

[0040] Figure 10 A planar structure schematic diagram of a display panel provided by an embodiment of the present application.

[0041] Legend of reference signs:

[0042] 100, Micro-LED display device; 200, display panel;

[0043] ​10, substrate; 20, integrated circuit layer; 30, LED light emitting layer; 31, first epitaxial layer; 32, second epitaxial layer; 33, third epitaxial layer; 34, first bonding layer; 35, second bonding layer; 36, third bonding layer; 37, first N-type electrode; 38, second N-type electrode; 39, third N-type electrode; 301, first substrate; 302, second substrate; 303, third substrate; 304, insulating layer; 305, common electrode; 40, lenticular lens device; 41, first lens; 42, second lens; 50, first flat layer; 51, groove; 60, second flat layer; 70, first filling layer; 80, second filling layer. DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person skilled in the art without creative labor fall within the scope of protection of the present application.

[0045] In the description of the present application, it should be understood that the terms "length", "width", "thickness", "upper", "lower" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.

[0046] In the present application, unless otherwise explicitly specified and limited, "on" or "under" of the first feature to the second feature can include that the first and second features are in direct contact, or the first and second features are not in direct contact but are in contact through another feature between them.

[0047] The embodiments of the present application provide a Micro-LED display device and a display panel. The following are described in detail respectively. It should be noted that the description order of the following embodiments is not limited as the preferred order of the embodiments.

[0048] The application provides a Micro-LED display device and a display panel.

[0049] Specifically, please refer to Figure 1 The Micro-LED display device 100 provided by the embodiment of the application comprises a substrate 10, an integrated circuit layer 20, an LED light-emitting layer 30 and a lenticular lens device 40. The integrated circuit layer 20 is arranged on one side of the substrate 10. The LED light-emitting layer 30 is arranged on one side of the integrated circuit layer 20 and is electrically connected to the integrated circuit layer 20. The lenticular lens device 40 is arranged on a side of the LED light-emitting layer 30 away from the integrated circuit, and the lenticular lens device 40 is used for converting light emitted by the LED light-emitting layer 30 into collimated light and emitting the collimated light. Without additionally arranging an optical device outside the Micro-LED display device 100 to shape the light, the loss of the light in the optical device is avoided, the light conversion efficiency of the whole optical system is improved, the weight of the module is reduced, and the light and thin module is beneficial to be realized.

[0050] Specifically, the combination of the integrated circuit layer 20 and the substrate 10 can be referred to as an integrated circuit wafer, the integrated circuit layer 20 comprises a driver circuit system, the driver circuit system comprises a pixel driver array, and the pixel driver array comprises a driving circuit for driving the LED light-emitting layer 30 to emit light.

[0051] It can be understood that the LED light-emitting layer 30 emits a plurality of light rays, including divergent light rays, also known as Lambertian light, which are narrowed by the lenticular lens device 40 to become collimated light and exit in parallel. In addition, the LED light-emitting layer 30 also emits parallel light, which converges after passing through the lenticular lens device 40. Most importantly, the main purpose of the lenticular lens device 40 is to narrow the angle of the divergent light rays to form collimated light rays, so that the light rays can easily enter the optical waveguide device through a smaller light inlet, smoothly perform subsequent optical waveguide processing, and improve light conversion efficiency.

[0052] In an embodiment, the LED light-emitting layer 30 is a single LED wafer for emitting light rays of one color. Correspondingly, the lenticular lens device collimates the light rays emitted by the single LED wafer. Specifically, for the entire display panel 200, a plurality of LED wafers are arranged at intervals on the same horizontal plane, and each pixel unit of the display panel 200 includes a plurality of LED wafers arranged at intervals.

[0053] Further, referring to Figure 2 In another embodiment, the LED light-emitting layer 30 is a plurality of LED wafers stacked to form a full-color vertical stack structure, and the LED light-emitting layer 30 can emit light rays of multiple colors. Compared with the aforementioned embodiment in which the LED light-emitting layer 30 is a single LED wafer, since the plurality of LED wafers can be arranged in a vertical plane, the size of a single pixel unit of the display panel 200 can be reduced, thereby improving the pixel density and increasing the resolution, which is particularly suitable for augmented / virtual reality display devices that require high resolution.

[0054] Specifically, the LED light-emitting layer 30 includes an epitaxial stack structure, which includes a first epitaxial layer 31, a second epitaxial layer 32, and a third epitaxial layer 33. The first epitaxial layer 31 is disposed on one side of the integrated circuit layer 20 and is used to emit light rays of a first color; the second epitaxial layer 32 is disposed on a side of the first epitaxial layer 31 away from the substrate 10 and is bonded to the first epitaxial layer 31, and the second epitaxial layer 32 is used to emit light rays of a second color; and the third epitaxial layer 33 is disposed on a side of the second epitaxial layer 32 away from the substrate 10 and is bonded to the second epitaxial layer 32, and the third epitaxial layer 33 is used to emit light rays of a third color.

[0055] In the embodiment, the lenticular lens device 40 is disposed on a side of the third epitaxial layer 33 away from the substrate 10, and is used to convert the first color light rays, the second color light rays, and the third color light rays into collimated light rays.

[0056] It needs to be explained that, please refer to Figure 3 , with this full-color vertical stack structure, for the divergent light beams emitted from the LED light-emitting layer 30, the lenticular lens device 40 can convert them into collimated light beams. But for the parallel light beams emitted from the LED light-emitting layer 30, since the parallel light beams in the same direction contain three colors, and the same material has different refractive indexes for different wavelengths of light, the propagation directions of the multi-wavelength light beams after passing through the lenticular lens device 40 are separated, that is, the chromatic dispersion phenomenon, which will bring color difference in display and seriously affect the imaging quality.

[0057] Therefore, please refer to Figure 4 and Figure 5 , the embodiments of the present application overcome the above-mentioned defects by manufacturing the lenticular lens device 40 with two materials. Specifically, the lenticular lens device 40 includes a first lens 41 and a second lens 42, the distance from the first lens 41 close to one side surface of the substrate 10 to the third epitaxial layer 33 is less than the distance from the second lens 42 close to one side surface of the substrate 10 to the third epitaxial layer 33. Wherein, the refractive index of the first lens 41 is greater than the refractive index of the second lens 42.

[0058] It can be understood that the first lens 41 is a positive lens, and the second lens 42 is a negative lens. When the light emitted by the LED light-emitting layer 30 enters the lenticular lens device 40, it will first pass through the first lens 41 and then pass through the second lens 42. Since the refractive index of the first lens 41 is high, it will focus the light, and on the contrary, the refractive index of the second lens 42 is low, which will make the light spread out, thereby generating an inverse chromatic dispersion effect inside the lenticular lens device 40. This inverse chromatic dispersion can offset the chromatic aberration caused by the propagation of light in different media, thereby being able to produce more real and detailed images, which is beneficial to improve the imaging quality. Simply speaking, the embodiments of the present application use the combination of the first lens 41 with strong chromatic dispersion material and the second lens 42 with weak chromatic dispersion material, so that the chromatic dispersion compensates each other, thereby achieving the purpose of eliminating chromatic aberration.

[0059] It needs to be explained that, by using two materials with different refractive indexes as the materials of the lenticular lens, the refractive indexes of the first lens 41 and the second lens 42 are selected as follows:

[0060] The Abbe number is generally used in the optical field to represent the strength of the material dispersion, English is Abber, represented by the letter V, and the reference base generally used is the middle dispersion, that is, the difference between the refractive indexes of blue light and red light. Abbe number Vd=(nd-1) / (nF-nC), nd, nF and nC are the refractive indexes of d light, F light and C light respectively.

[0061] d light-yellow light, wavelength is 587.6 nanometers, which is the d line in the sodium spectrum;

[0062] F light-cyan light, wavelength is 486.1 nanometers, which is the F line in the hydrogen spectrum;

[0063] C light-red light, wavelength is 656.3 nanometers, which is the C line in the hydrogen spectrum.

[0064] As can be seen, materials with different refractive indices have different Abbe numbers, and generally have the following corresponding relationship, as shown in Table 1:

[0065] Refractive index Abbe number 1.56 35.5、41、43 1.6 33、40 1.67 32 1.71 37 1.74 33

[0066] Table 1

[0067] Based on this, in the embodiments of the present application, the refractive index of the first lens 41 is in the range of 1.4-1.5, and the refractive index of the second lens 42 is in the range of 1.7-2.0. Optionally, the refractive index of the first lens 41 can be one of 1.40, 1.41, 1.42, 1.43, 1.44, 1.45, 1.46, 1.47, 1.48, 1.49 and 1.50, and the refractive index of the second lens 42 can be one of 1.70, 1.75, 1.80, 1.85, 1.90, 1.95 and 1.20.

[0068] Specifically, the material of the first lens 41 can include alumina, titanium dioxide or other organic materials with high refractive index, and the material of the second lens 42 can include one or a combination of alumina, titanium dioxide, silicon dioxide and silicon nitride.

[0069] In one embodiment, referring to Figures 6A-6B , the second lens 42 is arranged on the side of the first lens 41 away from the substrate 10. Specifically, as Figure 6A shown, the side surface of the second lens 42 close to the substrate 10 is attached to the side surface of the first lens 41 away from the substrate 10, and the side surface of the first lens 41 away from the substrate 10 and the side surface of the second lens 42 close to the substrate 10 together form an elliptical structure. As Figure 6B shown, the side surface of the second lens 42 close to the substrate 10 is attached to the side surface of the first lens 41 away from the substrate 10, and the first lens 41 is an elliptical structure and the second lens 42 is an arc structure.

[0070] In another embodiment, referring to Figures 6C-6DThe second lens 42 is arranged inside the first lens 41, and the first lens 41 and the second lens 42 form a core-shell covering type structure. Specifically, as shown in Figure 6C The second lens 42 partially covers the first lens 41, and the first lens 41 and the second lens 42 jointly constitute a half-elliptical structure. As shown in Figure 6D The second lens 42 fully covers the first lens 41, and the first lens 41 and the second lens 42 are both elliptical structures.

[0071] It should be noted that, considering that the light-emitting efficiency of the red LED wafer is lower than that of the green LED wafer and that of the blue LED wafer, color cast is easily caused. Therefore, in the embodiment of the present application, the red epitaxial layer is arranged at the bottom in the LED light-emitting layer 30 adopting the full-color vertical stacking structure. Specifically, the first color light is red light, the second color light is green light, and the third color light is blue light, that is, the first epitaxial layer 31 is a red epitaxial layer, the second epitaxial layer 32 is a green epitaxial layer, and the third epitaxial layer 33 is a blue epitaxial layer.

[0072] In this way, in the actual preparation process, due to process reasons, the red epitaxial layer can have a large area, so as to avoid crosstalk caused by light excitation when emitting upward, and facilitate avoiding color cast.

[0073] Please refer to Figure 7 In the embodiment of the present application, the orthographic projection of the second epitaxial layer 32 on the substrate 10 is located within the orthographic projection of the first epitaxial layer 31 on the substrate 10, and the orthographic projection of the third epitaxial layer 33 on the substrate 10 is located within the orthographic projection of the second epitaxial layer 32 on the substrate 10.

[0074] Further, the Micro-LED display device 100 further comprises a first planar layer 50 and a second planar layer 60. The first planar layer 50 is arranged on the side of the third epitaxial layer 33 away from the substrate 10, and is used for planarizing the surface of the integrated circuit layer 20. The surface of the side of the first planar layer 50 away from the substrate 10 is provided with a groove 51, and at least part of the lenticular lens device 40 is located in the groove 51. The second planar layer 60 is arranged on the side of the first planar layer 50 and the lenticular lens device 40 away from the substrate 10, and is used for planarizing the surface of the side of the lenticular lens device 40 away from the substrate 10.

[0075] Specifically, the cross-sectional shape of the groove 51 can be a circular arc shape to match the outer surface of the lenticular lens device 40. In the embodiment of the present application, the maximum depth of the groove 51 is 2-3 microns.

[0076] Further, the LED light-emitting layer 30 further comprises a first bonding layer 34, a second bonding layer 35 and a third bonding layer 36. The first bonding layer 34 is arranged between the first epitaxial layer 31 and the integrated circuit layer 20, and is used to bond the first epitaxial layer 31 and the integrated circuit layer 20. The second bonding layer 35 is arranged between the second epitaxial layer 32 and the first epitaxial layer 31, and is used to bond the second epitaxial layer 32 and the first epitaxial layer 31. The third bonding layer 36 is arranged between the third epitaxial layer 33 and the second epitaxial layer 32, and is used to bond the third epitaxial layer 33 and the second epitaxial layer 32. In this way, the pixel circuit layer is electrically connected to the first epitaxial layer 31, the second epitaxial layer 32 and the third epitaxial layer 33 through the first bonding layer 34, the second bonding layer 35 and the third bonding layer 36, so as to drive each epitaxial layer to emit light.

[0077] Specifically, the first bonding layer 34 is a metal bonding layer, which can be used as a reflector to reflect the light emitted by the LED light-emitting layer 30, thereby improving the light efficiency. Optionally, the first bonding layer 34 comprises one or more of Au-Au bonding, Au-Sn bonding, Au-In bonding, Ti-Ti bonding and Cu-Cu bonding. The thickness of the first bonding layer 34 ranges from 0.1 microns to 3 microns.

[0078] Specifically, the second bonding layer 35 and the third bonding layer 36 are transparent bonding layers, so that the light emitted by the first epitaxial layer 31 and the second epitaxial layer 32 can pass through, thereby further improving the light efficiency. Optionally, the second bonding layer 35 and the third bonding layer 36 comprise one or more of silicon dioxide, indium tin oxide and organic glue. The thickness of the second bonding layer 35 ranges from 0.1 microns to 3 microns, and the thickness of the third bonding layer 36 ranges from 0.1 microns to 3 microns.

[0079] The LED light-emitting layer 30 further comprises an insulating layer 304, which covers one side of the integrated circuit layer 20, the sidewalls of the first bonding layer 34, the sidewalls of the first epitaxial layer 31, the sidewalls of the second bonding layer 35, the sidewalls of the second epitaxial layer 32, the sidewalls of the third bonding layer 36 and the sidewalls of the third epitaxial layer 33, and the side surface away from the substrate 10.

[0080] The LED light-emitting layer 30 further includes a first N-type electrode 37, a second N-type electrode 38, and a third N-type electrode 39. One end of the first N-type electrode 37 overlaps with the side of the first epitaxial layer 31 away from the substrate 10, and the other end is electrically connected to the integrated circuit layer 20. One end of the second N-type electrode 38 overlaps with the side of the second epitaxial layer 32 away from the substrate 10. One end of the third N-type electrode 39 overlaps with the third epitaxial layer 33 on one side of the integrated circuit layer 20.

[0081] The LED light-emitting layer 30 also includes a common electrode 305, which is located on the insulating layer 304 and is connected to the first epitaxial layer 31, the second epitaxial layer 32 and the third epitaxial layer 33 respectively. One end of the common electrode 305 is electrically connected to the integrated circuit layer 20.

[0082] Please see Figure 8 as well as Figures 9A-9I The present invention also provides a method for fabricating a Micro-LED display device 100, comprising the following steps:

[0083] Step S1, providing a substrate 10;

[0084] Step S2: An integrated circuit layer 20 is formed on one side of the substrate 10;

[0085] Step S3: An LED light-emitting layer 30 is formed on the side of the integrated circuit layer 20 away from the substrate 10, and the LED light-emitting layer 30 is electrically connected to the integrated circuit layer 20; and

[0086] Step S4: A biconvex lens device 40 is formed on the side of the LED light-emitting layer 30 away from the substrate 10. The biconvex lens device 40 is used to convert the light emitted by the LED light-emitting layer 30 into collimated light for emission.

[0087] It should be noted that the embodiments of the present invention are illustrated by taking the LED light-emitting layer 30 as an example of a full-color vertical stacked structure formed by stacking multiple LED wafers.

[0088] Specifically, for steps S1 and S2, please refer to... Figure 9A Following step S2, the following steps are also included:

[0089] S11, prepare LED wafers that emit three types of light: first color light, second color light, and third color light;

[0090] S12, three types of LED wafers are sequentially stacked and bonded to the side of the integrated circuit layer 20 away from the substrate 10.

[0091] It should be noted that the first color light is red light, the second color light is green light, and the third color light is blue light, i.e., the three types of LED wafers are red LED wafers, green LED wafers, and blue LED wafers, which are taken as examples for description.

[0092] Next, the preparation processes of the red LED wafer, the green LED wafer, and the blue LED wafer in step S21 are described in detail.

[0093] The red LED wafer includes a first substrate 301 and a first epitaxial layer 31 formed on the first substrate 301. The material of the first substrate 301 includes GaAs, and the material of the first epitaxial layer 31 includes AlGaInP / GaInP quantum well material. The red LED wafer further includes an N-type doped semiconductor layer and a P-type doped semiconductor layer. The N-type doped semiconductor layer includes GaAs, and the P-type doped semiconductor layer includes GaP material. In some embodiments, a periodic stress adjusting layer and a current diffusion layer are further grown between the N-type doped semiconductor layer and the first epitaxial layer 31, and a periodic stress adjusting layer, a current diffusion layer, and a Bragg reflection layer (DBR) are further grown between the P-type doped semiconductor layer and the first epitaxial layer 31. Optionally, the Bragg reflection layer DBR can be made of multiple layers of silicon dioxide and titanium pentoxide. By changing the thickness and number of layers, selective reflection or transmission of light of different wavelengths can be formed.

[0094] The green LED wafer includes a second substrate 302 and a second epitaxial layer 32 formed on the second substrate 302. The second substrate 302 includes a sapphire substrate 10, and can also be a composite of one or more of GaN, AlN, Si, and SiC. The material of the second epitaxial layer 32 includes InGaN / GaN quantum well material. The green LED wafer further includes an N-type doped semiconductor layer and a P-type doped semiconductor layer. The N-type doped semiconductor layer includes GaAs, and the P-type doped semiconductor layer includes GaP material. In some embodiments, a periodic stress adjusting layer and a current diffusion layer are further grown between the N-type doped semiconductor layer and the second epitaxial layer 32, and a periodic stress adjusting layer, a current diffusion layer, and a Bragg reflection layer (DBR) are further grown between the P-type doped semiconductor layer and the second epitaxial layer 32. Optionally, the Bragg reflection layer DBR can be made of multiple layers of silicon dioxide and titanium pentoxide. By changing the thickness and number of layers, selective reflection or transmission of light of different wavelengths can be formed.

[0095] The blue LED wafer includes a third substrate 303 and a third epitaxial layer 33 formed on the third substrate 303. The third substrate 303 includes a sapphire substrate 10, and can also be a composite of one or more of GaN, AlN, Si, SiC. The material of the third epitaxial layer 33 includes InGaN / GaN quantum well material. The blue LED wafer further includes an N-type doped semiconductor layer including GaAs and a P-type doped semiconductor layer including GaP material. In some embodiments, a periodic stress adjusting layer and a current diffusion layer are further grown between the N-type doped semiconductor layer and the third epitaxial layer 33, and a Bragg reflection layer (DBR) is further grown between the P-type doped semiconductor layer and the third epitaxial layer 33. Optionally, the Bragg reflection layer DBR can be made of multiple layers of silicon dioxide and titanium pentoxide, and by changing the thickness and number of layers, selective reflection or transmission of light of different wavelengths can be formed.

[0096] Specifically, in the above step S22, the following steps are included:

[0097] As shown in FIG. 22, S221, the first epitaxial layer 31 of the red LED wafer is bonded to the integrated circuit, and the first substrate 301 of the red LED wafer is removed. Figure 9B

[0098] As shown in FIG. 22, S222, the second epitaxial layer 32 of the green LED wafer is bonded to the integrated circuit layer 20, and the second substrate 302 of the green LED wafer is removed. Figure 9C

[0099] As shown in FIG. 22, S223, the third epitaxial layer 33 of the blue LED wafer is bonded to the integrated circuit layer 20, and the third substrate 303 of the blue LED wafer is removed. Figure 9D

[0100] Optionally, in steps S221, S222 and S223, the first substrate 301, the second substrate 302 and the third substrate 303 can be removed by a laser lift-off process or wet chemical etching.

[0101] Further, the above step S4 includes the following steps:

[0102] As shown in FIG. 4, S41: a first planar layer 50 is formed on the side of the third epitaxial layer 33 away from the substrate 10, and a groove 51 is provided on the surface of the first planar layer 50 away from the substrate 10; Figure 9E

[0103] As shown in FIG. 4, S42: a second planar layer 60 is formed on the surface of the first planar layer 50 away from the substrate 10, and a groove 61 is provided on the surface of the second planar layer 60 away from the substrate 10;​​​​Figure 9F As shown in S42, a first filling layer 70 is formed in the groove 51, and the first filling layer 70 is processed to form a first lens 41.

[0104] As shown in S43, a second filling layer 80 is formed on the side of the first flat layer 50 and the first lens 41 away from the substrate 10, and the second filling layer 80 is processed to form a second lens 42, and the first lens 41 and the second lens 42 constitute a lenticular lens device 40. Figure 9G Figure 9H As shown in S43, a second filling layer 80 is formed on the side of the first flat layer 50 and the first lens 41 away from the substrate 10, and the second filling layer 80 is processed to form a second lens 42, and the first lens 41 and the second lens 42 constitute a lenticular lens device 40.

[0105] As shown in S44, a second flat layer 60 is formed to cover the side of the first flat layer 50 and the lenticular lens device 40 away from the substrate 10. Figure 9I Specifically, in the step S41, the first flat layer 50 can be selected from plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD), pulsed laser deposition (PLD), molecular beam epitaxy (MBE), etc. The groove 51 is a circular arc recess structure, which can be formed by exposing, developing and etching the first flat layer 50. The first lens 41 fills the groove 51, and the surfaces of the first lens 41 and the second lens 42 away from the substrate 10 can be planarized by chemical mechanical polishing (CMP).

[0106] As shown in S44, a second flat layer 60 is formed to cover the side of the first flat layer 50 and the lenticular lens device 40 away from the substrate 10.

[0107] The display panel 200 comprises a plurality of Micro-LED display devices 100 arranged in an array. Specifically, the display device using the display panel 200 can comprise virtual reality (VR) and augmented reality (AR) equipment. Figure 10 Beneficial effects: In the Micro-LED display device and display panel provided by the present application, the lenticular lens structure is arranged on the side of the LED light-emitting layer away from the integrated circuit, and the collimation characteristics of the lenticular lens device are used to convert the light emitted by the LED light-emitting layer into collimated light, without the need to additionally arrange an optical device outside the Micro-LED display device to shape the light, thereby avoiding the loss of light in the optical device, improving the light conversion efficiency of the entire optical system, reducing the weight of the module, and facilitating the realization of the light and thin module.

[0108] In the above embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0109]

[0110] ​​The above describes in detail the Micro-LED display device and the display panel provided by the embodiment of the present application, and the principle and the implementation mode of the present application are described by applying specific examples; the above embodiment is only used to help understand the technical solution and the core idea of the present application; the ordinary skilled in the art should understand that the technical solution recorded in the foregoing embodiments can be modified or some technical features can be replaced equivalently; and the modification or the replacement does not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the present application.

Claims

1. A Micro-LED display device, characterized in that, include: Substrate; An integrated circuit layer is disposed on one side of the substrate; An LED light-emitting layer is disposed on the side of the integrated circuit layer away from the substrate and is electrically connected to the integrated circuit layer; as well as A biconvex lens device is disposed on the side of the LED light-emitting layer away from the substrate. The biconvex lens device is used to convert the light emitted by the LED light-emitting layer into collimated light for emission. The LED light-emitting layer includes an epitaxial stacked structure, the epitaxial stacked structure comprising: A first epitaxial layer is disposed on one side of the integrated circuit layer and is used to emit light of a first color; A second epitaxial layer is disposed on the side of the first epitaxial layer away from the substrate and bonded to the first epitaxial layer. The second epitaxial layer is used to emit a second color of light. A third epitaxial layer is disposed on the side of the second epitaxial layer away from the substrate and bonded to the second epitaxial layer. The third epitaxial layer is used to emit a third color of light. The biconvex lens device is disposed on the side of the third epitaxial layer away from the substrate, and is used to convert the first color light, the second color light and the third color light into collimated light for emission; The biconvex lens device includes a first lens and a second lens, wherein the distance from the surface of the first lens near the substrate to the third epitaxial layer is less than the distance from the surface of the second lens near the substrate to the third epitaxial layer; The refractive index of the first lens is greater than that of the second lens.

2. The Micro-LED display device according to claim 1, characterized in that, The second lens is disposed on the side of the first lens away from the substrate.

3. The Micro-LED display device according to claim 1, characterized in that, The second lens is disposed inside the first lens, and the first lens and the second lens form a core-shell encapsulated structure.

4. The Micro-LED display device according to any one of claims 1-3, characterized in that, The refractive index of the first lens is in the range of 1.4-1.5, and the refractive index of the second lens is in the range of 1.7-2.

0.

5. The Micro-LED display device according to claim 1, characterized in that, The first color light is red light, the second color light is green light, and the third color light is blue light.

6. The Micro-LED display device according to claim 5, characterized in that, The orthographic projection of the second epitaxial layer onto the substrate lies within the orthographic projection of the first epitaxial layer onto the substrate, and the orthographic projection of the third epitaxial layer onto the substrate lies within the orthographic projection of the second epitaxial layer onto the substrate.

7. The Micro-LED display device according to claim 1, characterized in that, The Micro-LED display device also includes: A first planarization layer is applied to the side of the LED light-emitting layer away from the substrate. A groove is formed on the surface of the first planarization layer away from the substrate, and at least a portion of the biconvex lens device is located within the groove. A second planarization layer covers the first planarization layer and the side of the biconvex lens device away from the substrate.

8. A display panel, characterized in that, It includes a plurality of Micro-LED display devices as described in any one of claims 1-7, arranged in an array.

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