Double-sided probe interconnection structure for W-band TR assembly

Abstract

The invention belongs to the technical field of W-band TR assemblies, and particularly discloses a double-sided probe interconnection structure for a W-band TR assembly. The structure comprises a waveguide, probes and a substrate integrated waveguide, wherein the substrate integrated waveguide is integrated between the two probes to form a back-to-back structure; the two ends of the back-to-back structure are inserted into the two waveguides respectively. According to the scheme, the technical problems that a traditional W-band vertical transmission structure cannot well achieve high integration and miniaturization design of a T / R assembly and a wireless communication system, the overall assembly difficulty is large, the assembly is prone to being affected by the cavity effect, and airtightness is not achieved are solved.

Description

Technical Field

[0001] The invention belongs to the technical field of W-band TR components, and in particular relates to a double-sided probe interconnection structure for W-band TR components. Background Art

[0002] As one of the bands in the millimeter wave that contains the atmospheric window, the W band is a key development band for modern military electronic technology and modern communication technology. It is widely used in the fields of radar, electronic countermeasures and precision guidance. The performance of its T / R components directly affects the communication quality of the entire wireless communication system. Therefore, the high integration, high reliability and small size of the W band vertical transmission structure plays a vital role in improving the integration of the communication system working in the W band.

[0003] In lower frequency bands such as C and X bands, for the interconnection of active and passive devices or structures in the same plane, traditional microstrip lines, strip lines, coplanar waveguides and other structures can be used to achieve the transformation of electromagnetic signal modes; for the interconnection of active and passive devices in different planes and vertical directions, connectors such as wool buttons or vertical transmission structures such as quasi-coaxial, rectangular metal waveguides and other structures can be used to achieve structural interconnection.

[0004] In the design process of W-band T / R components, it is necessary to consider the characteristics of W-band electromagnetic waves, such as short wavelength and susceptibility to cavity effects, to design a suitable passive structure to realize the interconnection of active and passive devices in the system, so as to realize the transformation of the transmission mode of electromagnetic signals in wireless communication systems, and complete the high integration and miniaturization design of the overall system. Quartz glass substrates have the advantage of high reliability, and the thin film process based on quartz substrates also has the characteristics of high precision. They can better meet the short wavelength characteristics of W-band electromagnetic signals and the high reliability requirements of W-band T / R components, so they are widely used in the design of W-band T / R components. The common transmission mode of W-band signals between different planes is the microstrip probe-waveguide transition structure. Due to the limitations of the medium itself and the microstrip line transmission mode, the traditional vertical interconnection structure using waveguides is easily affected by the cavity effect and is not airtight, which greatly reduces the reliability of the entire system.

[0005] In general, the traditional W-band vertical transmission structure cannot achieve high integration and miniaturization design of T / R components and wireless communication systems. The overall assembly of the components is difficult, they are easily affected by the cavity effect and are not airtight. Summary of the invention

[0006] The purpose of the present invention is to provide a double-sided probe interconnection structure for a W-band TR component to solve the technical problems that the traditional W-band vertical transmission structure cannot well realize the high integration and miniaturization design of T / R components and wireless communication systems, the overall assembly of the component is difficult, it is easily affected by the cavity effect and is not airtight.

[0007] To achieve the above object, the present invention adopts the following technical solution:

[0008] A double-sided probe interconnection structure for a W-band TR component comprises: a waveguide, a probe, and a substrate integrated waveguide, wherein the substrate integrated waveguide is integrated between two probes to form a back-to-back structure; and both ends of the back-to-back structure are respectively inserted into two waveguides.

[0009] In the present invention, vertical transmission of W-band signals is achieved through a waveguide-microstrip probe-substrate integrated waveguide-microstrip probe-waveguide structure, and transmission of millimeter wave and terahertz signals in the vertical direction is achieved. The integrated double-sided probe structure is used to achieve the mode transition of the field from waveguide to microstrip line and then from microstrip line to substrate integrated waveguide (SIW), and the vertical transmission of W-band signals is achieved through the form of waveguide-probe. Compared with the traditional waveguide-microstrip line transmission structure, the structure can make the whole body airtight, solve the technical problems that the traditional W-band vertical transmission structure cannot well realize the high integration and miniaturization design of T / R components and wireless communication systems, the overall assembly of the components is difficult, and they are easily affected by the cavity effect and are not airtight, and achieve the technical effect of improving the overall reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is an overall schematic diagram of a double-sided probe interconnection structure for a W-band TR component in an embodiment of the present invention;

[0011] Figure 2 is a side schematic diagram of a double-sided probe interconnection structure for a W-band TR component in an embodiment of the present invention;

[0012] Figure 3 is a schematic structural diagram of a back-to-back structure in an embodiment of the present invention;

[0013] Figure 4 is a schematic top view of a substrate integrated waveguide in an embodiment of the present invention;

[0014] Figure 5 It is a schematic diagram of simulation results of a double-sided probe interconnect structure for a W-band TR component in an embodiment of the present invention. DETAILED DESCRIPTION

[0015] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description and claims. It should be noted that the drawings are all in very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0016] It should be noted that, in order to clearly explain the content of the present invention, the present invention specifically cites multiple embodiments to further illustrate different implementations of the present invention, wherein the multiple embodiments are enumerated rather than exhaustive. In addition, for the sake of brevity of explanation, the contents mentioned in the previous embodiments are often omitted in the subsequent embodiments. Therefore, the contents not mentioned in the subsequent embodiments can refer to the previous embodiments accordingly.

[0017] Example 1

[0018] A double-sided probe interconnect structure for W-band TR components, such as Figure 1 As shown, it includes: a waveguide, a probe, and a substrate integrated waveguide, wherein the substrate integrated waveguide is integrated between two probes to form a back-to-back structure; two ends of the back-to-back structure are respectively inserted into the two waveguides.

[0019] As an optional implementation, the probe is composed of multiple sections of microstrip lines.

[0020] As an optional implementation, the lengths and widths of the multiple microstrip lines of the probe are different.

[0021] As an optional implementation, the bottom layer of the probe portion of the back-to-back structure inserted into the waveguide has no metal grounding.

[0022] As an optional implementation, the substrate integrated waveguide includes a single-layer dielectric and ground vias on both sides.

[0023] As an optional implementation, the spacing between the grounding through holes is 0.15 mm, and the diameter of the grounding through hole is 0.06 mm.

[0024] As an optional implementation, the single-layer medium is a quartz material with a dielectric constant of 3.78.

[0025] As an optional implementation, a metal cavity is provided on the end surface where the waveguide is connected to the back-to-back structure, so as to accommodate the back-to-back structure.

[0026] As an optional implementation, a short-circuit surface structure is provided on the other side where the back-to-back structure is connected to the waveguide.

[0027] As an optional implementation, a height-reducing cavity structure is provided at the connection between the waveguide and the back-to-back structure.

[0028] Specifically, the double-sided probe interconnection structure for the W-band TR component is not limited to the following when it is implemented. Figure 1 As shown, a waveguide-microstrip probe-substrate integrated waveguide-microstrip probe-waveguide transmission structure is established. The waveguide structure and the corresponding short-circuit surface are respectively embodied in two metal structures, and the substrate is not limited to being connected to one of the metal structures by bonding or welding. After the substrate is installed in one of the metal structures, the quartz substrate is installed with the other metal structure and between the two metal structures.

[0029] Specifically, quartz with a dielectric constant of 3.78 is used as the medium of the substrate, the thickness of a single-layer quartz substrate is 0.127mm, the thickness of a single-layer metal is 4um, the diameter of the grounding through hole is 0.06mm, and the spacing between the grounding through holes is 0.15mm. The quartz medium itself is airtight, so that electromagnetic waves are airtight when transmitted in the SIW. At the same time, an airtight connection method, such as brazing, is used when connecting the quartz substrate and the metal structural parts, thereby ensuring the airtightness of the overall structure and achieving effective isolation and electromagnetic shielding effects for W-band signals.

[0030] like Figure 2 As shown in the figure, the waveguide structure serves as the input and output port, and the main mode of electromagnetic signal transmission in the waveguide structure is the TE10 mode. Through the microstrip probe and the wide and narrow microstrip line structure, the electromagnetic signal is coupled to the microstrip line in cooperation with the short-circuit surface in the metal structure, and the TE10 mode is converted into a quasi-TEM mode. Then, the electromagnetic signal is transmitted from the microstrip line to the SIW structure through the microstrip matching structure, thereby realizing the conversion from the quasi-TEM mode to the TE10 mode. This structure adopts a symmetrical back-to-back design, thereby realizing the transmission of electromagnetic signals in different planes, and at the same time can reduce the impedance discontinuity and transmission loss caused by different transmission structures.

[0031] The SIW structure consists of a single-layer dielectric and grounding via structures on both sides. The distance between the grounding vias on both sides is determined by calculation to ensure single-mode transmission of the signal in the SIW structure. The upper and lower metal ground structures of the SIW, the sidewall metallization of the dielectric substrate and the airtightness of the dielectric itself are used to achieve airtight transmission of the signal, and the substrate and the metal structure are connected by using airtight materials to achieve overall airtightness.

[0032] Back-to-back structures are not limited to Figure 3 As shown, it is specifically a microstrip probe-substrate integrated waveguide-microstrip probe structure of a quartz substrate, which is mainly composed of a quartz substrate substrate, a microstrip probe on the substrate and its wide and narrow line matching structure, a metal ground and a SIW composed of a metalized through hole. Figure 4 The SIW structure is composed of upper and lower metal grounds and metallized through holes on both sides. The metallized through holes not only play the role of forming the SIW, but also can effectively reduce the leakage of electromagnetic signals by designing the spacing between adjacent metallized holes.

[0033] The electromagnetic simulation results of the double-sided probe interconnect structure for W-band TR components in the field simulation software HFSS are not limited to the following: Figure 5 As shown in the figure, it can be seen that the overall return loss of the vertical transmission structure at 89~101GHz is better than -20dB, and the overall insertion loss is better than 0.5dB, which has good RF transmission performance.

[0034] In the embodiment of the present application, the metal cavity side wall is used as a shield for the microstrip probe structure to achieve electromagnetic shielding and confinement of the W-band signal; microstrip line matching structures of different lengths and widths are used to achieve the conversion from TE10 mode to quasi-TEM mode and then to TE10 mode; the distance between two rows of shielding holes is calculated to form a SIW structure to achieve single-mode transmission of electromagnetic signals therein, while reducing the impact of the cavity effect on the transmission performance; a single-layer substrate integrated design is adopted to complete four electromagnetic signal mode conversions and impedance matching designs, greatly improving the integration and design flexibility of millimeter wave and terahertz circuits; the structural characteristics of the SIW are used to achieve overall airtightness, thereby improving the reliability of the entire system.

[0035] In the embodiment of the present application, a waveguide and a short-circuit surface structure are designed on the structural member, and then the microstrip probe and the substrate integrated waveguide are designed on the same substrate, so that the electromagnetic signal is transmitted in the same material, the system integration is improved, and the airtight design requirements of the T / R component during use are guaranteed. The back-to-back structure based on the microstrip probe-substrate integrated waveguide effectively reduces the impact of the cavity effect, while reducing the design difficulty of traditional millimeter wave and terahertz T / R components and achieving the airtight requirements of the components, which has great engineering application value in millimeter wave and terahertz circuit design.

[0036] The above is only a specific implementation of the present invention, and does not limit the patent scope of the present invention. Any equivalent replacement made by using the contents of the present invention and the drawings or applied to other related fields are included in the patent protection scope of the present invention.

Claims

1. A double-sided probe interconnection structure for a W-band TR component, characterized in that: include: A waveguide, a probe, and a substrate integrated waveguide, wherein the substrate integrated waveguide is integrated between two probes to form a back-to-back structure; Two ends of the back-to-back structure are respectively inserted into two waveguides.

2. The double-sided probe interconnect structure for a W-band TR component according to claim 1, characterized in that: The probe is composed of multiple sections of microstrip lines.

3. The double-sided probe interconnect structure for a W-band TR component according to claim 2, characterized in that: The lengths and widths of the multiple microstrip lines of the probe are different.

4. The double-sided probe interconnect structure for a W-band TR component according to claim 1, characterized in that: The bottom layer of the probe portion of the back-to-back structure inserted into the waveguide has no metal grounding.

5. The double-sided probe interconnect structure for a W-band TR component according to claim 1, characterized in that: The substrate integrated waveguide comprises a single-layer dielectric and grounding through holes on both sides.

6. The double-sided probe interconnect structure for a W-band TR component according to claim 5, characterized in that: The spacing between the grounding through holes is 0.15 mm, and the diameter of the grounding through holes is 0.06 mm.

7. The double-sided probe interconnect structure for a W-band TR component according to claim 5, characterized in that: The single-layer medium is a quartz material with a dielectric constant of 3.

78.

8. The double-sided probe interconnect structure for a W-band TR component according to claim 1, characterized in that: The end surface of the waveguide connected to the back-to-back structure is provided with a metal cavity for accommodating the back-to-back structure.

9. The double-sided probe interconnect structure for a W-band TR component according to claim 1, characterized in that: The other side where the back-to-back structure is connected to the waveguide is provided with a short-circuit surface structure.

10. The double-sided probe interconnect structure for a W-band TR component according to claim 1, characterized in that: A height-reducing cavity structure is provided at the connection between the waveguide and the back-to-back structure.

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