Micro LED unit, display panel and manufacturing method of Micro LED unit

Abstract

The invention provides a Micro LED (Light Emitting Diode) unit, a Micro LED display panel and a manufacturing method of the Micro LED unit. The Micro LED unit comprises a transparent conductive layer, a first contact layer, a first coating layer, a light-emitting layer, a second coating layer and a second contact layer which are stacked from top to bottom. Wherein the first contact layer comprises a metal doped region doped with a metal material. According to some embodiments of the invention, the Micro LED unit comprises the metal doped region doped with the metal material, so that the conductive efficiency of the Micro LED unit is improved, and the luminous efficiency of the Micro LED unit is improved.

Description

Technical Field

[0001] The present application relates to the Micro LED field, and in particular to a Micro LED unit, a Micro LED display panel, and a method for manufacturing the Micro LED unit. Background Art

[0002] Micro LED (Micro Light Emitting Diode) is also known as micro light-emitting diode. Micro LED display panels have a high-density integrated LED array. The distance between LED pixels in the array is in the micrometer (μm) level, and each LED pixel can emit light by itself. Micro LED has been widely used in various display fields. For example, Micro LED can act as a pixel unit in display fields such as virtual reality (VR), augmented reality (AR), and mixed reality (MR).

[0003] In conventional technology, Micro LED can be coupled to the driving circuit through electrodes, and the opening and closing and brightness of a single Micro LED can be controlled by the driving circuit. In some technologies, the electrode of Micro LED (for example, the top electrode located in the light emitting direction of Micro LED) can be formed by metal materials. For example, the metal electrode can be set at the top center of the Micro LED stage to achieve electrical coupling between the layers below the Micro LED stage and the transparent conductive layer above. The metal electrode may cause part of the emitted light of Micro LED to be blocked and absorbed, thereby reducing the luminous efficiency of Micro LED. In some technologies, the size of the top electrode can be reduced by the metal agglomeration scheme. For example, the top N-type electrode of some red light MicroLEDs can be formed by metal materials (including metal single substance, alloy, etc.) under high temperature annealing conditions. After high temperature annealing, the metal agglomeration effect can reduce the area of ​​the N-type electrode, but its blocking and absorption of axial light is still strong, which may cause a decrease in the proportion of light collection within a certain angle range around the light emitting axis of Micro LED (also known as the normal direction). As the luminous efficiency of Micro LED decreases, it may be necessary to increase the driving voltage of Micro LED to achieve a predetermined brightness, which will increase the energy consumption of the Micro LED display panel.

[0004] Therefore, it is necessary to propose an improved Micro LED unit, which can further reduce the blocking of light by the electrode while maintaining the ohmic contact of the top contact layer, thereby further improving the efficiency of the Micro LED unit. Summary of the invention

[0005] In order to solve the above technical problems, the present application provides a Micro LED unit, a Micro LED display panel and a method for manufacturing a Micro LED unit, wherein a metal material is doped in the top contact layer to form a metal doping region, thereby further reducing the blocking of light by the electrode while maintaining the ohmic contact of the top contact layer, so as to further improve the efficiency of the Micro LED unit.

[0006] Some embodiments of the present application provide a Micro LED unit, which includes: a transparent conductive layer, a first contact layer, a first cladding layer, a light-emitting layer, a second cladding layer, and a second contact layer stacked from top to bottom; wherein the first contact layer includes a metal-doped region doped with a metal material.

[0007] Some embodiments of the present application provide a Micro LED display panel, which includes: a driving circuit; and a Micro LED unit as described above, wherein the Micro LED unit is arranged on the driving circuit and driven by the driving circuit.

[0008] Some embodiments of the present application provide a method for manufacturing a Micro LED display unit, which includes the following steps: sequentially forming a second contact layer, a second cladding layer, a light-emitting layer, a first cladding layer, a first contact layer, and a transparent conductive layer on a substrate; and doping the first contact layer with a metal material to form a metal-doped region.

[0009] According to some embodiments of the present application, the Micro LED unit, Micro LED display panel, and the method for manufacturing the Micro LED unit form a metal doped region by doping a metal material in the top contact layer, which can further reduce the blocking of light by the electrode while maintaining the ohmic contact of the top contact layer, so as to further improve the efficiency of the Micro LED unit. It should be noted that the embodiments of the present application do not necessarily require the full realization of the above technical effects, and the technical effects that can be achieved by at least one technical problem that can be solved by it constitute a contribution to the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above and other objects, features and advantages of the present disclosure will become more apparent through a more detailed description of exemplary embodiments of the present disclosure in conjunction with the accompanying drawings, wherein like reference numerals generally represent like components in the exemplary embodiments of the present disclosure.

[0011] Figure 1 shows a Micro LED unit according to some embodiments;

[0012] Figure 2 shows a Micro LED unit according to some embodiments;

[0013] Figure 3 A partial schematic diagram of a Micro LED unit according to some embodiments of the present application is shown;

[0014] Figure 4 A Micro LED unit according to some embodiments of the present application is shown;

[0015] Figure 5 A Micro LED display panel according to some embodiments of the present application is shown;

[0016] Figure 6 A Micro LED display device according to some embodiments of the present application is shown;

[0017] Figure 7 A Micro LED display device according to some embodiments of the present application is shown;

[0018] Figure 8 The invention shows a method for manufacturing a Micro LED unit according to some embodiments of the present application. DETAILED DESCRIPTION

[0019] The preferred embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the preferred embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to make the present disclosure more thorough and complete, and to fully convey the scope of the present disclosure to those skilled in the art.

[0020] Figure 1 FIG. 1 shows a Micro LED unit 100 according to some embodiments. Figure 1As shown, the Micro LED unit 100 includes a top transparent conductive layer 101, a first contact layer 102, a first cladding layer 103, a light-emitting layer 104, a second cladding layer 105, and a second contact layer 106. Among them, the first contact layer 102 and the first cladding layer 103 can be the same type of semiconductor, for example, both are N-type semiconductors; and the second cladding layer 105 and the second contact layer 106 can be the same type of semiconductor, for example, both are P-type semiconductors. According to some embodiments, the first contact layer 102 and the first cladding layer 103 have a conductivity type opposite to that of the second cladding layer 105 and the second contact layer 106. For example, if the first contact layer 102 and the first cladding layer 103 are N-type semiconductors, the second cladding layer 105 and the second contact layer 106 are P-type semiconductors, and vice versa. In addition, in order to improve the ohmic contact performance of the first contact layer 102, a metal electrode 110 can also be arranged above the first contact layer 102 to improve conductivity. It can be understood that due to the introduction of the block-shaped metal electrode 110 , the light emitted from the light-emitting layer 104 will be blocked and absorbed to a certain extent, thereby affecting the light-emitting efficiency of the Micro LED unit 100 .

[0021] In some improved schemes, the luminous efficiency of the Micro LED unit can be improved by adjusting the shape of the electrode. Figure 2 FIG. 2 shows a Micro LED unit 200 according to some embodiments. Figure 2 As shown, similar to Figure 1 The Micro LED unit 100 in the embodiment of the present invention, the Micro LED unit 200 includes a top transparent conductive layer 101, a first contact layer 102, a first cladding layer 103, a light-emitting layer 104, a second cladding layer 105, a second contact layer 106, etc. Among them, the first contact layer 102 and the first cladding layer 103 can be the same type of semiconductors, for example, both are N-type semiconductors; and the second cladding layer 105 and the second contact layer 106 can be the same type of semiconductors, for example, both are P-type semiconductors. According to some embodiments, the first contact layer 102 and the first cladding layer 103 have a conductivity type opposite to that of the second cladding layer 105 and the second contact layer 106. For example, if the first contact layer 102 and the first cladding layer 103 are N-type semiconductors, the second cladding layer 105 and the second contact layer 106 are P-type semiconductors, and vice versa. In addition, in order to overcome Figure 1In the scheme shown, the whole electrode blocks and absorbs light, and the Micro LED unit 200 also arranges a cluster of multiple metal electrodes 210 above the first contact layer 102 to improve conductivity. In some examples, the metal electrode 210 can be formed by annealing a thin film metal electrode material under high temperature conditions, and its number and size can be adjusted according to the volume of the electrode material and the annealing conditions. It can be understood that compared with the metal electrode 110 in the Micro LED unit 100, the metal electrode 210 reduces the area of ​​the electrode, thereby reducing the blocking and absorption of light emitted from the light-emitting layer 104.

[0022] Although the clustered metal electrode 210 can improve the luminous efficiency of the Micro LED unit 200 to a certain extent, the clustered shape of the electrode 210 may still cause shielding of the light emitted by the light-emitting layer 104, for example, it may cause a decrease in the light collection ratio within ±20° in the normal direction.

[0023] Some embodiments of the present application provide a Micro LED unit. Figure 3 The Micro LED unit 300 according to some embodiments of the present application is shown. It should be understood that the various components shown in the figure are shown to present the main working principle of the Micro LED unit 300, and the size and shape of the various components in the actual Micro LED unit may be different from the figure, and the relative position relationship between these components may also be different from the figure. In addition, for the purpose of clearly showing the main structure of the Micro LED unit 300, some other components in the Micro LED unit 300 have been omitted. In some examples, the Micro LED unit 300 can be a red Micro LED unit. The basic principles of the present application will be explained below using a red Micro LED unit as an example. It should be understood that the basic principles of the present application can also be applied to Micro LED units of other colors.

[0024] like Figure 3As shown, the Micro LED unit 300 includes a transparent conductive layer 301, a first contact layer 302, a first cladding layer 303, a light-emitting layer 304, a second cladding layer, and a second contact layer 306 stacked from top to bottom. In some examples, the transparent conductive layer 301 located on the top of the Micro LED unit 300 can be made of transparent conductive materials such as transparent conductive oxide (TCO), indium tin oxide (ITO), antimony doped zinc oxide (AZO), antimony doped tin oxide (ATO), fluorine doped tin oxide (FTO), and aluminum doped zinc oxide (AZO). The first contact layer 302 and the first cladding layer 303 are the same type of semiconductors, and the second cladding layer 305 and the second contact layer 306 are the same type of semiconductors. For example, in some examples, the first contact layer 302 and the first cladding layer 303 may both be N-type semiconductor layers, and the second contact layer 306 and the second cladding layer 305 may both be P-type semiconductor layers. For example, the first contact layer 302 is formed by doping Si with one of the following materials: GaAs, AlInP, Al x Ga (1-x) InP (0.01 ≤ x ≤ 0.99), where the Si doping concentration is 1e 16 To 1e 20 In some other examples, the first contact layer 302 and the first cladding layer 303 may both be P-type semiconductor layers, and the second contact layer 306 and the second cladding layer 305 may both be N-type semiconductor layers. The basic principle of the present application will be described below with the first contact layer 302 and the first cladding layer 303 being N-type semiconductor layers, and the second contact layer 306 and the second cladding layer 305 being P-type semiconductor layers.

[0025] Continue to refer Figure 3 , the first contact layer 302 also includes a metal doping region 307 doped with a metal material. In the context of the present application, a metal material refers to a material that maintains the electrical properties of a metal, such as a metal elemental material or an alloy material. Instead of the block electrodes and cluster electrodes mentioned above, the Micro LED unit 300 enhances the electrical conductivity between the transparent conductive layer 301 and the first contact layer 302 in the form of a metal doping region. Specifically, the metal doping region 307 can participate in forming an ohmic contact between the transparent conductive layer 301 and the first contact layer 302. It should be understood that compared with not providing the metal doping region 307, the metal doping region 307 can improve the contact resistivity of the ohmic contact.

[0026] In some examples, the metal doping region 307 is formed of one or more of the following metal materials: Au, Ge, Pd, Ni, Ti, Pt, etc. In some embodiments, the material of the metal doping region 307 includes: AuGe, PdGe, PdSi, NiGeAu, NiGe, NiAu, Ti, Pt or Au, etc. For example, the metal doping region 307 is formed as an AuGe alloy region, or as a combined thin film layer of Au and Ge. In order to form a good ohmic contact, if the two metal materials Au and Ge are formed into an AuGe alloy region, the alloy formed by AuGe can satisfy the ratio relationship of AuGe: x Ge (1-x) (0 < x < 1).

[0027] In some examples, the thickness t of the metal doping region 307 satisfies the relationship: t ≤ 1 μm. In the context of the present application, the thickness t of the metal doping region 307 represents the height of the metal doping region 307 that can be doped in the first contact layer 302. Limiting the thickness t of the metal doping region 307 to a lower level can prevent the thickness accumulation from causing shielding and absorption of the light emitted by the light-emitting layer 304. On the other hand, doping with thinner metals will also reduce the requirements for the doping process and reduce the difficulty of doping. In some examples, the metal doping region 307 is formed in a preset depth d from the upper surface of the first contact layer 302 to below the upper surface. In other words, the doping depth d of the metal doping region 307 refers to the depth of doping of the metal doping region 307 on and below the upper surface of the first contact layer 302 with the upper surface of the first contact layer 302 as the reference standard. For example, the preset depth d can satisfy the relationship: 0.1 μm ≤ d ≤ 1 μm. In some examples, within the range of this thickness t and the preset depth d, the metal doped region 307 can be well embedded in the first contact layer 302 to form a good combination, ensuring an effective charge transfer channel. When the thickness t is greater than 1 μm or the preset depth d is greater than 1 μm, the structural stability of the first contact layer 302 may be excessively affected. On the other hand, from a process point of view, the preset depth d of 0.1 μm to 1 μm facilitates precise control of the doping process. In modern semiconductor manufacturing processes, precise control of depth is one of the keys to achieving high-performance devices. This depth range can be easily achieved through existing technical means, and can ensure high process repeatability and stability. At the same time, metal doping within this depth range is also conducive to reducing errors and uncertainties in the process and improving production yield.

[0028] In some examples, the metal material in the metal doping region 307 has a distribution radius r on the upper surface of the first contact layer 302, and satisfies the relationship: 0.1 μm ≤ r ≤ 10 μm. By controlling the doping range of the metal material within this radius r, the distribution of the metal material will neither be too concentrated to cause excessive local current density, causing overheating and potential damage risks, nor be too dispersed to make its effect on improving the performance of the contact layer not obvious. For example, when the radius r is less than 0.1 μm, the amount of metal doping may be insufficient, and it is difficult to effectively improve the contact resistance and conductivity; and when the radius r is greater than 10 μm, it may cause uneven current distribution, affecting the overall stability and reliability of the device. Secondly, within this specific distribution radius range, it can better cooperate with subsequent process steps. For the doping process, the radius range of 0.1 μm to 10 μm can reduce the process difficulty and cost while ensuring accuracy. Too small a radius r may require higher precision equipment and more complex process control, increasing production costs; setting too large a radius r may cause uncertainty in the doping range. According to specific design requirements and performance indicators, selecting a suitable metal spreading radius within the range of 0.1μm ≤ r ≤ 10μm can achieve better performance, which is of positive significance for improving the performance of electronic devices and reducing production costs.

[0029] Figure 4 4 shows a Micro LED unit 400 according to some embodiments of the present application. The Micro LED unit 400 is constructed in a shape as shown in the figure, which is narrow at the top and wide at the bottom, and includes Figure 3 Specifically, the Micro LED unit 400 includes a transparent conductive layer 301, a first contact layer 302, a first cladding layer 303, a light emitting layer 304, a second cladding layer 305, and a second contact layer 306 stacked from top to bottom.

[0030] Continue to refer Figure 4 In the Micro LED unit 400, a metal material is further doped in the first contact layer 302 to form a metal doping region 307. In some examples, by controlling the doping characteristics of the metal material (e.g., the material, thickness, depth, and dispersion radius described above), the light transmittance of the metal doping region 307 in the axial direction of the middle axis l of the Micro LED unit 400 is above a preset threshold value (e.g., 95%). In some examples, the light transmittance of the metal doping region 307 in the receiving range of 20° with the middle axis l of the Micro LED unit 400 as the reference side is above a preset threshold value (e.g., 93%).

[0031] like Figure 3 and Figure 4As shown, in some examples, the Micro LED unit 400 further includes an electrode 308 disposed under the second contact layer 306. For example, the electrode 308 can be formed of at least one of the following materials: AuZn alloy, AuBe alloy, indium tin oxide ITO. Among them, AuZn alloy and AuBe alloy can be used to form a non-transparent electrode, and indium tin oxide ITO can be used to form a transparent electrode. In some embodiments, the Micro LED unit 400 is an AlGaInP-based Micro LED unit.

[0032] In addition, if Figure 4 As shown, the Micro LED unit 400 may further include a transparent conductive layer 401 and a metal bonding layer 402 below the second contact layer 306 and above the electrode 308. The transparent conductive layer 401 and the metal bonding layer 402 can form an omni-directional reflector (ODR) structure with high reflection efficiency. In some embodiments, the transparent conductive layer 401 may be made of transparent conductive materials such as transparent conductive oxide (TCO), indium tin oxide (ITO), antimony doped zinc oxide (AZO), antimony doped tin oxide (ATO), fluorine doped tin oxide (FTO), and aluminum doped zinc oxide (AZO). The material constituting the metal bonding layer 402 may be various metals, including one or more of Al, Au, Rh, Ag, Cr, Ti, Pt, Sn, Cu, AuSn, and TiW. The transparent conductive layer 401 can form an ohmic contact layer between the metal bonding layer 402 and the second contact layer 306 .

[0033] Continue to refer Figure 4 The Micro LED unit 400 may further include a passivation layer 403 disposed between the transparent conductive layer 301 and the sides of each layer of the Micro LED unit 400 body (including the first contact layer 302, the first cladding layer 303, the light-emitting layer 304, the second cladding layer 305, the second contact layer 306, the transparent conductive layer 401 and the metal bonding layer 402). The passivation layer 403 is disposed on the sides of each layer of the body, so as to prevent the transparent conductive layer 301 from directly contacting the sides of each layer of the light-emitting mesa to form an electrical connection. In some embodiments, the passivation layer 403 may be a transparent layer. For example, the material of the passivation layer 403 may include SiO 2 、SiON、Al2 O 3 , or a combination of one or more of SiN.

[0034] Continue to refer Figure 4 The Micro LED unit 400 may further include a substrate (also called an integrated circuit backplane) 404, and the layers described above (for example, the transparent conductive layer 301, the first contact layer 302, the first cladding layer 303, the light-emitting layer 304, the second cladding layer 305, the second contact layer 306, the transparent conductive layer 401, the metal bonding layer 402, the electrode 308 and the passivation layer 403) may be constructed on the substrate 404.

[0035] Some embodiments of the present application provide a Micro LED display panel. Figure 5 FIG. 5 shows a Micro LED display panel 500 according to some embodiments of the present application. Figure 5 As shown, the Micro LED display panel 500 includes a substrate (integrated circuit backplane) 404. A plurality of electrodes 308 are embedded in the substrate (integrated circuit backplane) 404, and one electrode 308 corresponds to one Micro LED unit 400. Each of the plurality of Micro LED units 400 is disposed on the top surface of the substrate (integrated circuit backplane) 404. In the present disclosure, the top surface of the substrate (integrated circuit backplane) 404 is a surface of the substrate (integrated circuit backplane) 404 that can be used to arrange various components. It is to be understood that the top surface of the substrate (integrated circuit backplane) 404 or its corresponding bottom surface on the opposite side is typically larger than the other side surfaces of the substrate (integrated circuit backplane) 404. As shown in FIG. Figure 5 As shown, two Micro LED units 400 are shown for illustrative purposes. It should be understood that the Micro LED display panel 500 may include more Micro LED units 400 extending in the horizontal and vertical directions of a plane. Figure 5 As described above, the transparent conductive layers 301 of the Micro LED units 400 are interconnected to form a continuous transparent conductive layer. The continuous transparent conductive layer can be connected to another electrode (e.g., a common electrode) of the substrate (integrated circuit backplane) 404, so that each Micro LED unit 400 can be driven by the substrate (integrated circuit backplane) 404. A structure (not shown) to prevent light crosstalk can also be set between adjacent Micro LED units 400 to prevent light from interfering with each other and affecting the imaging effect.

[0036] Figure 6 1 shows a Micro LED display device according to some embodiments of the present application. Figure 6As shown, a near-eye display (NED) 600 (e.g., VR glasses) includes a pair of multi-color projectors 610 and a frame 620 for fixing the multi-color projectors 610. The NED 600 may also include other components, which are omitted here to clearly illustrate the configuration of the NED 600. Each multi-color projector 610 may be arranged at the end of a temple (not shown) of the NED 600, respectively. A power supply system and a processing system for driving the multi-color projector 610 may be embedded in the temple. The image presented by each multi-color projector 610 can be captured by the eyes of a viewer (not shown), thereby rendering a virtual scene or an enhanced scene for the viewer. In some embodiments, the term "rendering" may also be referred to as a synonym such as "display" or "exhibition". It will be understood that each multi-color projector 610 may include three Micro LED panels of different colors (e.g., corresponding to Figure 5 The Micro LED display panel 500 in the embodiment of the present invention) and a combiner (e.g., a combining prism). The combiner can be used to combine (also referred to as "composite") images rendered by the three Micro LED panels into a composite image.

[0037] Figure 7 1 shows a Micro LED display device according to some embodiments of the present application. Figure 7 As shown, the head mounted virtual reality device 700 includes two Micro LED panels 710 (eg, corresponding to Figure 5 Although not shown, the head mounted virtual reality device 710 may further include a central processing unit (CPU), a graphics processing unit (GPU) as a signal source, and other related circuits. Introducing a Micro LED panel in the head mounted virtual reality device 710 may improve its luminous efficiency, thereby reducing energy consumption and improving imaging quality.

[0038] Some embodiments of the present application provide a method for manufacturing a Micro LED unit. Figure 8 FIG. 8 shows a method 800 for manufacturing a Micro LED display unit according to some embodiments of the present application. Figure 4 and Figure 8 , method 800 includes the following steps 802 and 804.

[0039] In step 802, a metal bonding layer (e.g., metal bonding layer 402), a transparent conductive layer (e.g., transparent conductive layer 401), a contact layer (e.g., second contact layer 306), a cladding layer (e.g., second cladding layer 305), a light-emitting layer (e.g., light-emitting layer 304), a cladding layer (e.g., first cladding layer 303), a contact layer (e.g., first contact layer 302), and a transparent conductive layer (e.g., transparent conductive layer 301) are sequentially formed on a substrate (e.g., substrate 404). The Micro LED unit formed in step 802 may include the features described above with respect to the Micro LED unit 400, and the relevant contents are all cited here, and will not be repeated herein.

[0040] In step 804, a metal material is doped into the first contact layer (e.g., the first contact layer 302) to form a metal doping region (e.g., the metal doping region 307). The metal doping region formed in step 804 may include the features described above with respect to the metal doping region, and the relevant contents are incorporated herein and will not be described in detail herein.

[0041] It should be noted that relational terms in this document, such as "first" and "second", are only used to distinguish an entity or operation from another entity or operation, and do not require or imply any actual relationship or order between these entities or operations. In addition, the words "include", "have" and "include" and other similar forms are intended to be equivalent in meaning and are open-ended, and one or more items following any of these words are not meant to be an exhaustive list of such one or more items, or to be limited to the one or more items listed.

[0042] As used herein, unless expressly stated otherwise, the term "or" encompasses all possible combinations unless not feasible. For example, if a component is stated to include A or B, then unless expressly stated otherwise or not feasible, the component may include A, or B, or A and B. As a second example, if a component is stated to include A, B, or C, then unless expressly stated otherwise or not feasible, the component may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0043] In the foregoing description, embodiments have been described with reference to many specific details, which may vary depending on the implementation. Certain changes and modifications may be made to the described embodiments. In view of the description and practice of the present application disclosed herein, other embodiments will be clear to those skilled in the art. The description and examples are intended to be considered as merely exemplary, and the true scope and spirit of the present application are indicated by the following claims. The order of steps shown in the drawings is also intended to be used for illustrative purposes only and is not intended to be limited to any particular order of steps. Therefore, it will be appreciated by those skilled in the art that these steps may be performed in different orders while implementing the same method.

[0044] In the drawings and the specification, exemplary embodiments have been disclosed. However, many variations and modifications may be made to these embodiments. Therefore, although specific terms are employed, they are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A Micro LED unit, characterized in that: The Micro LED unit includes: a transparent conductive layer, a first contact layer, a first cladding layer, a light-emitting layer, a second cladding layer, and a second contact layer stacked from top to bottom; wherein the first contact layer includes a metal-doped region doped with a metal material.

2. The Micro LED unit according to claim 1, characterized in that: The metal doping region participates in forming an ohmic contact between the transparent conductive layer and the first contact layer.

3. The Micro LED unit according to claim 2, characterized in that: The metal doped region is configured to improve the contact resistivity of the ohmic contact.

4. The Micro LED unit according to claim 2, wherein: The metal doped region is formed of one or more of the following metal materials: Au, Ge, Pd, Ni, Ti or Pt.

5. The Micro LED unit according to claim 4, characterized in that: The metal doped region is formed as an AuGe alloy region, or is formed as a combined thin film layer of Au and Ge.

6. The Micro LED unit according to claim 1, characterized in that: The thickness of the metal doping region is 1 μm or less.

7. The Micro LED unit according to claim 6, characterized in that: The metal doping region is formed at a predetermined depth from an upper surface of the first contact layer to below the upper surface.

8. The Micro LED unit according to claim 7, characterized in that: The preset depth is greater than or equal to 0.1 μm and less than or equal to 1 μm.

9. The Micro LED unit according to claim 7, wherein: The spreading radius of the metal material in the metal doping region on the upper surface of the first contact layer is greater than or equal to 0.1 μm and less than or equal to 10 μm.

10. The Micro LED unit according to claim 1, characterized in that: The light transmittance of the metal-doped region in the axial direction of the central axis of the MicroLED unit is above a threshold.

11. The Micro LED unit according to claim 10, characterized in that: The threshold is 95%.

12. The Micro LED unit according to claim 1, wherein: The light transmittance of the metal-doped region within a receiving range of an angle of 20° with the middle axis of the MicroLED unit as a reference side is above a threshold.

13. The Micro LED unit according to claim 12, characterized in that: The threshold is 93%.

14. The Micro LED unit according to claim 1, wherein: The Micro LED unit is a red Micro LED unit.

15. The Micro LED unit according to claim 1, characterized in that: The first contact layer and the first cladding layer are both first conductivity type semiconductor layers, and the second contact layer and the second cladding layer are both second conductivity type semiconductor layers, and the second conductivity type is opposite to the first conductivity type.

16. The Micro LED unit according to claim 15, characterized in that: The first contact layer is formed by doping Si with one of the following materials: GaAs, AlInP, Al x Ga (1-x) InP (0.01 ≤ x ≤ 0.99), where the Si doping concentration is 1e 16 To 1e 20 within the range.

17. The Micro LED unit according to claim 1, wherein: The Micro LED unit includes an electrode disposed under the second contact layer.

18. The Micro LED unit according to claim 17, characterized in that: The electrode is formed of at least one of the following materials: AuZn alloy, AuBe alloy, indium tin oxide.

19. The Micro LED unit according to claim 1, characterized in that: The transparent conductive layer is formed of at least one of the following materials: transparent conductive oxide, indium tin oxide, antimony-doped zinc oxide, antimony-doped tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide.

20. A Micro LED display panel, characterized in that: The Micro LED display panel includes: a drive circuit; and The Micro LED unit according to any one of claims 1 to 19, which is arranged on the driving circuit and driven by the driving circuit.

21. A method for manufacturing a Micro LED unit, characterized in that: The method comprises: forming a second contact layer, a second cladding layer, a light-emitting layer, a first cladding layer, a first contact layer, and a transparent conductive layer in sequence on the substrate; and A metal material is doped into the first contact layer to form a metal doped region.

22. The method according to claim 21, characterized in that The metal doping region participates in forming an ohmic contact between the transparent conductive layer and the first contact layer.

23. The method according to claim 22, characterized in that The metal doped region is configured to improve the contact resistivity of the ohmic contact.

24. The method according to claim 22, characterized in that The metal doped region is formed of one or more of the following metal materials: Au, Ge, Pd, Ni, Ti or Pt.

25. The method according to claim 24, characterized in that Doping the first contact layer with a metal material to form a metal-doped region includes: doping the metal material to form an AuGe alloy region, or forming a combined thin film layer of Au and Ge.

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