Sapphire-based optical fluid wall shear stress sensor and preparation method thereof

Large-depth smooth cavity of sapphire substrate is prepared by high-density multi-angle femtosecond laser combined with magnetorheology and IBE polishing technology, and a high-temperature resistant bonding layer is formed through femtosecond laser welding, which solves the bonding difficulty and cavity preparation problems of sapphire-based high-temperature optical MEMS shear stress sensor in the prior art, achieving efficient process flow and effective work at high temperatures.

CN120176895AActive Publication Date: 2025-06-20NORTHWESTERN POLYTECHNICAL UNIV
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Patent Information

Application Number
CN202510662121.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-22
Publication Date
2025-06-20
Estimated Expiration
2045-05-22

AI Technical Summary

Technical Problem

The existing high-temperature sapphire-based optical MEMS shear stress sensors have problems such as difficult bonding and difficult to prepare large-depth smooth cavity during process preparation, which limits the manufacturing and application of the sensor.

Method used

High-density multi-angle femtosecond laser combined with magnetorheology and IBE polishing technology are used to prepare large-depth smooth cavity of sapphire substrates, and support the substrate and sensitive substrates are supported by femtosecond laser welding to form a high-temperature-resistant bonding layer.

Benefits of technology

The preparation of a large-depth smooth cavity of sapphire substrate is realized, which reduces process costs and improves yields, and the sensor can work effectively in a high temperature environment above 1000°C.

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Abstract

The invention relates to the technical field of micro-nano manufacturing, in particular to a sapphire-based optical fluid wall shear stress sensor and a preparation method thereof, and the preparation method comprises the steps: preparing a fixed grating and a welding film on a supporting substrate; processing a concave cavity on the sensitive substrate, processing a groove in the concave cavity to form a target structure with the same shape as the floating element, and preparing a sensitive grating on the target structure; welding the sensitive substrate and the support substrate to form a bonding wafer; an elastic beam and a floating element are prepared to form a shear stress sensor. The preparation of the wall shear stress sensor is realized through high-density multi-angle femtosecond laser etching, magneto-rheological and IBE combined cavity polishing and sapphire-platinum metal film laser welding, the whole sapphire wafer does not need to be placed in a high-temperature and high-pressure bonding environment in the preparation process, the process selection before and after welding is not limited, and the production efficiency is improved. Therefore, the difficulty of the whole preparation process is reduced.
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