Efficient autocatalytic metallization of polymer surfaces

Through electroless deposition and immersion plating processes, copper interconnects are formed on the polymer surface, which solves the problems of numerous metallization steps and uncontrolled etching in the prior art, and realizes a high-efficiency and low-roughness packaging structure, suitable for advanced semiconductor packaging.

CN120457538APending Publication Date: 2025-08-08APPLIED MATERIALS INC
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Patent Information

Application Number
CN202380089698.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-12-28
Filing Date
2023-09-11
Publication Date
2025-08-08

AI Technical Summary

Technical Problem

The prior art has many steps, time-consuming and expensive problems in the metallization process of non-conductive surfaces in semiconductor packaging, and the current etchant is not controlled enough to remove copper and nickel alloys, limiting the packaging size reduction ability.

Method used

The electroless deposition process is used to deposit cobalt alloy or nickel alloy adhesion layer on the polymer surface, and the copper seed layer is formed by an immersion plating process, followed by the control of the removal of copper and nickel alloys using optimized etchant and process conditions, simplifying the metallization process.

Benefits of technology

More efficient non-conductive surface metallization is achieved, reducing roughness, improving the size scaling capability of the package, and the etching process is more controlled, suitable for patterning of advanced package interconnects.

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Abstract

A semiconductor package and a method for fabricating a metallization of a non-conductive surface of the semiconductor package are provided. In one embodiment, the method includes depositing an adhesion layer on a polymeric surface by an electroless deposition process. The polymer surface defines sidewalls of the through-hole, and the adhesion layer comprises a cobalt alloy or a nickel alloy. The method further includes depositing a copper seed layer on the adhesion layer by a immersion plating process. The copper seed layer displaces a portion of the adhesion layer. The method further includes filling the through via with a copper-containing layer.
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