Method for preventing TOPCon solar cell boron diffusion furnace door flange from rusting

Through environmental regulation, hardware optimization and process parameter adjustment, the rust problem of TOPCon solar cell boron diffusion furnace door flange is solved, extending the service life of the flange, reducing silicon wafer pollution, improving battery efficiency and stability, and reducing operating costs.

CN120565455APending Publication Date: 2025-08-29宜宾英发德耀科技有限公司
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Patent Information

Application Number
CN202510712036.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-29
Publication Date
2025-08-29

AI Technical Summary

Technical Problem

During the boron diffusion of TOPCon solar cell, the rust of the furnace door flange leads to silicon wafer pollution and efficiency reduction, which is mainly due to the machine environment, equipment hardware and process formula.

Method used

Through environmental regulation, hardware optimization and process parameter adjustment, including workshop temperature and humidity control, machine seal optimization, flange cooling water flow optimization, air intake method improvement, gas flow and concentration adjustment, and shallow junction and low concentration doping, a full-chain anti-corrosion system is formed.

Benefits of technology

It extends the service life of the furnace door flange, reduces silicon wafer pollution, improves battery conversion efficiency, improves photogenerated carrier collection probability and minor child life, enhances the stability and anti-ultraviolet light attenuation performance of photovoltaic cells, and reduces operating costs.

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Abstract

The invention discloses a method for preventing a TOPCon solar cell boron diffusion furnace door flange from rusting. The problem of silicon wafer pollution caused by flange rusting is solved through environment control, hardware adjustment and technological parameter optimization. The method comprises the following specific steps: controlling the temperature and humidity of a workshop to be 23 + / -3 DEG C, 40-50%, and ensuring that no process cooling water leaks from a machine; the flow of flange cooling water is reduced from 7 L / min to 5 L / min, and a short air inlet pipe in a 1.8 m furnace is adopted to replace a long air inlet pipe; when the source is introduced, the nitrogen at the furnace mouth is adjusted to 700 sccm, the source-carrying nitrogen is adjusted to 5500 sccm, the boron chloride is adjusted to 120 sccm, the deposition pressure is increased to 220 mbar, and the post-oxygen temperature is reduced to 1020 DEG C. According to the method, the concentration of boron chloride is reduced from 4.88% to 1.76%, and a low-concentration shallow PN junction is formed. Through optimization, the service life of the flange is prolonged to more than 100 days, the yellowing abnormity of a silicon wafer is reduced, the maintenance period of a diaphragm pump is prolonged from 30 days to 50 days, the conversion efficiency of the battery is improved by more than 0.04%, and the method is suitable for a TOPCon battery boron diffusion process.
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