IGBT (Insulated Gate Bipolar Translator) device with high short-circuit capability and manufacturing method thereof

Abstract

An IGBT device with high short-circuit capacity comprises a groove on an N-type substrate, a P-type well region is arranged below the outside of the groove, a conducting channel of the IGBT device is located in the P-type well region and close to the side wall of the groove, when voltage is applied to a grid electrode of the device to enable the device to be started, the width of each channel in the vertical direction is kept consistent, and the width of each channel in the vertical direction is kept consistent. The error value of the channel width does not exceed the set maximum error value. The invention further discloses a manufacturing method of the IGBT device with the high short circuit capacity. According to the IGBT device with the high short-circuit capability and the preparation method thereof, the P-type well region adopts multiple times of ion implantation, the annealing temperature of the P-type well region is greatly reduced, the short-channel effect of the device is inhibited, the saturation current of the device is reduced, the short-circuit capability is improved, and meanwhile, the average concentration of the P-type well region is higher than that of a traditional structure, so that the resistance of a body region is reduced; and the latch-up resistance of the device is improved.