Gallium oxide silicon-based integrated solar-blind ultraviolet image sensor and preparation method thereof

Through magnetron sputtering deposition and vacuum annealing and other technologies, the chip-level integration of the gallium oxide detector and silicon-based readout circuit is achieved at low temperatures, solving the problem of lattice mismatch between gallium oxide and silicon-based substrate and high-temperature processes, improving imaging accuracy and refresh rate, and achieving high-sensitivity daily blind ultraviolet imaging.

CN120568879AActive Publication Date: 2025-08-29NAT UNIV OF DEFENSE TECH
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Patent Information

Application Number
CN202511064040.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-31
Publication Date
2025-08-29
Estimated Expiration
2045-07-31

AI Technical Summary

Technical Problem

In the prior art, the epitaxial growth of gallium oxide materials requires a substrate with low mismatch and high flatness, and the growth, doping and etching processes require high temperature conditions, resulting in a mismatch between gallium oxide and silicon-based substrate lattice and difficult to directly epitaxial growth. The high-temperature process damages silicon-based devices, and the bonding interconnection method limits imaging accuracy and refresh rate.

Method used

The magnetically controlled sputtering deposition technology is used to grow gallium oxide thin films at low temperatures, combined with vacuum annealing treatment and maskless lithography technology, the chip-level integration of the gallium oxide detector and silicon-based readout circuit is achieved, and transparent electrodes and conductive gate lines are prepared through electron beam evaporation coating technology to ensure low temperature compatibility and high-precision alignment.

Benefits of technology

The low-temperature and high-precision chip-level integration of the gallium oxide detector and silicon-based readout circuit is realized, which improves imaging accuracy and refresh rate, reduces the impact of parasitic parameters, and improves signal transmission efficiency and system response speed.

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Abstract

The invention relates to the technical field of photoelectric detectors, and discloses a gallium oxide silicon-based integrated solar-blind ultraviolet image sensor and a preparation method thereof. The preparation method of the gallium oxide silicon-based integrated solar blind ultraviolet image sensor comprises the following steps: S100, preparing a silicon substrate electrode; s200, depositing a gallium oxide thin film on the electrode of the pixel region of the silicon substrate electrode through magnetron sputtering so as to realize low-temperature substrate-free selective growth of the gallium oxide thin film and obtain a device; s300, performing vacuum annealing treatment on the device to improve the photoelectric detection performance of the device; s400, plating a thin-layer electrode on the device through electron beam evaporation; s500, spin-coating ultraviolet photoresist on the device, and preparing cross-pixel aligned conductive grid lines by using maskless photoetching and electron beam evaporation coating technologies; and S600, stripping the redundant metal part by using the photoresist removing solution, exposing the transparent top electrode, and preparing the gallium oxide silicon-based integrated solar-blind ultraviolet image sensor.
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