Temperature-controlled dry etching machine and process

Abstract

The present application relates to the technical fields of semiconductor etching, and particularly relates to a temperature control type dry etching machine and process. The temperature control type dry etching machine comprises a workbench, an electric lifting frame arranged in the workbench, a temperature control device arranged in the electric lifting frame, a containing box fixedly connected to the workbench and located above the electric lifting frame, and a fixed cover fixedly connected to the containing box. The telescopic part of the electric lifting frame is extended and in contact with the containing box, and the two are sealed. The electric lifting frame is used to send a silicon wafer into the fixed cover. The present application changes the extraction position, so that the shielding cloth preferentially intercepts by-products generated in the etching process, reduces the residence time of by-products in the etching cavity, and performs air extraction in the shielding cloth to reduce the interference with the plasma distribution. Then, according to the change of the etching area, the extraction position is changed in real time, so that the by-products are immediately extracted after being generated, further reducing the interference of the by-products with the plasma distribution.

Description

Technical Field

[0001] This invention relates to the field of semiconductor etching technology, and in particular to a temperature-controlled dry etching machine and process. Background Technology

[0002] Dry etching machines are key equipment in semiconductor manufacturing. Compared with wet etching, they have higher precision and anisotropic properties. Their core principle is to use plasma technology to excite gas into a plasma state, and remove the material by chemical reaction or physical bombardment between active particles (such as ions and free radicals) and the material to be etched.

[0003] During the etching process of silicon wafers, byproducts are generated. These byproducts are mainly produced by the reaction of etching gas with the silicon wafer surface (including solid particles and gaseous reactants). Currently, most dry etching machines use air pumps to remove byproducts generated during the etching process. However, since the byproduct extraction location is fixed, while the location of byproduct generation during the etching process changes with the etching area, byproducts that are not effectively extracted will remain in the etching chamber, thereby interfering with the distribution and stability of the plasma. This interference will cause uneven plasma impact velocity, resulting in regional differences in the etching force on the silicon wafer surface. Ultimately, this non-uniformity will affect the overall etching effect of the silicon wafer, reduce processing quality, and even cause the etched structure to fail to meet design requirements. Summary of the Invention

[0004] To address the problems described in the background, this invention provides a temperature-controlled dry etching machine and process.

[0005] The technical solution of this invention is: a temperature-controlled dry etching machine, comprising:

[0006] Workbench;

[0007] An electric lifting frame is installed inside the workbench, and a temperature control device is installed inside the electric lifting frame;

[0008] A container is fixed to the workbench and located above the electric lifting frame. The telescopic part of the electric lifting frame extends out and seals with the container after contacting it.

[0009] A fixing cover is fixed inside the holding box. The electric lifting frame is used to feed the silicon wafer into the fixing cover. A plasma manufacturing module is provided at the top inside the fixing cover.

[0010] A shielding cloth is fixed inside the fixed cover. The cross-section of the shielding cloth consists of two vertical surfaces and a V-shaped surface between them, and the V-shaped surface is inclined.

[0011] An exhaust assembly, mounted on the container, is used to exhaust excess gas from the fixed cover;

[0012] A driving component, disposed on the fixed cover, is used to change the coverage area of ​​the shielding cloth. Through the cooperation of the driving component and the shielding cloth, the collection area for by-products is changed according to the change of the etching area.

[0013] More preferably, the shielding cloth is provided with coils for supporting it.

[0014] More preferably, the driving component includes:

[0015] A first electric slide rail is fixedly connected to the fixed cover. A first slider is slidably connected inside the first electric slide rail. A push rod is fixedly connected to the first electric slider inside the first electric slide rail.

[0016] A connecting frame is fixedly connected to the telescopic end of the push rod;

[0017] The second electric slide rail is fixedly connected to the side of the connecting frame away from the push rod. Two second sliders are slidably connected inside the second electric slide rail. Each of the two second electric sliders inside the second electric slide rail is fixedly connected to a connecting plate. A moving plate is fixedly connected to the connecting plate. A fixed block for driving the coil to move is fixedly connected to the moving plate.

[0018] More preferably, the exhaust assembly includes:

[0019] A ventilation ring is fixedly attached to the fixed cover;

[0020] An air pump is installed inside the container and is used to extract gas from the ventilation ring. A uniformly distributed first air guide pipe is fixed inside the fixed cover. The first air guide pipe is provided with a number of first air extraction ports. All the first air guide pipes are fixedly connected to and communicate with the ventilation ring.

[0021] More preferably, the projections of the first air intake ports of all the first air guide pipes onto the horizontal plane are all located within the projection range of the shielding cloth onto the water surface.

[0022] More preferably, the lower side of the shielding cloth is provided with evenly distributed magnetic attracting elements, all of which are magnetically connected to the coil, and the shielding cloth is located between the coil and the magnetic attracting elements.

[0023] More preferably, the magnetic suction element is fixedly connected to a second air guide tube that communicates with the adjacent first air guide tube, and the second air guide tube is provided with a plurality of second air extraction ports.

[0024] More preferably, the orifice diameter of all the first air guide tubes and all the second air guide tubes increases sequentially from the air pump to the air pump.

[0025] More preferably, each end of the coil is fixedly connected to a connecting block, the connecting block being slidably connected to the other end of the coil, one of the connecting blocks being fixedly connected to an arc-shaped rod that is slidably connected to the other connecting block, and the arc-shaped rod is wound with a tension spring fixed between the two connecting blocks.

[0026] A temperature-controlled dry etching process, based on the aforementioned temperature-controlled dry etching machine, comprises the following specific steps:

[0027] Step 1: Before etching the silicon wafer, the silicon wafer is first placed in the electric lifting frame, and then the silicon wafer is pushed into the fixed cover by the electric lifting frame, so that the silicon wafer and the plasma manufacturing module at the top of the fixed cover are kept at the distance required for the operation.

[0028] Step 2: After the silicon wafer is placed, the plasma generation module at the top of the fixing cover generates plasma to bombard the silicon wafer, thereby etching the silicon wafer.

[0029] Step 3: During the bombardment of the silicon wafer, the air pump draws gas from the fixed shroud through the air ring, the first air guide pipe and the second air guide pipe.

[0030] Step 4: During the above process, the byproducts generated during the etching of the silicon wafer are intercepted by the lower part of the shielding cloth, and the byproducts are extracted in conjunction with all the first and second air guides.

[0031] Step 5: When it is necessary to perform regional etching on the silicon wafer, the shielding cloth is moved towards the etching area of ​​the silicon wafer by controlling the movement of the electric slider in the first electric slide rail and the movement of the push rod extension part.

[0032] Step 6: When it is necessary to etch the silicon wafer from the outside to the inside, the two electric sliders in the second electric slide rail drive the two moving plates to move towards each other through the two connecting plates. During the process of the two moving plates moving towards each other, the coil is squeezed, so that the two ends on the front side of the coil move away from each other, thereby reducing the diameter of the coil, and thus gradually changing the coverage of by-products according to the area of ​​the silicon wafer being etched.

[0033] Step 7: After etching the silicon wafer is completed, turn off the plasma manufacturing module and air pump at the top of the fixed cover. The electric lifting frame will then move the silicon wafer downwards and remove it.

[0034] The beneficial effects of this invention are as follows: This invention adopts a method of changing the extraction position, so that the shielding cloth preferentially intercepts the by-products generated during the etching process, reducing the residence time of by-products in the etching chamber, and evacuating the shielding cloth to reduce interference with plasma distribution. Subsequently, the extraction position is changed in real time according to the change of the etching area, so that by-products are extracted immediately after they are generated, further reducing the interference of by-products on plasma distribution. This solves the problem of by-product retention caused by the mismatch between the by-product generation position and the fixed extraction position during the etching process. During the etching of silicon wafers, the temperature of silicon wafers is controlled by a temperature control device in the electric lifting frame to achieve temperature control of silicon wafers. When etching silicon wafers from the outside to the inside, the coverage area of ​​by-products by the shielding cloth is changed, and the coverage area is dynamically adjusted according to the area of ​​silicon wafer being etched, so as to cover the path of by-products sputtering in all directions, reduce the probability of by-products escaping, thereby improving the interception efficiency and reducing the impact of by-products on plasma distribution and stability. Attached Figure Description

[0035] Figure 1 This is a three-dimensional structural diagram of the present invention;

[0036] Figure 2 This is a three-dimensional structural schematic diagram from another perspective of the present invention;

[0037] Figure 3 This is a bottom view of the three-dimensional structure of the present invention;

[0038] Figure 4 This is a bottom view of the three-dimensional structure of the parts inside the fixing cover of the present invention;

[0039] Figure 5 This is a three-dimensional structural cross-sectional view of the fixing cover of the present invention;

[0040] Figure 6 This is a three-dimensional structural cross-sectional view of the shielding cloth of the present invention;

[0041] Figure 7 This is a three-dimensional structural diagram illustrating the positional relationship between the shielding cloth and the coil in this invention;

[0042] Figure 8 This is a three-dimensional structural cross-sectional view of the vent ring of the present invention;

[0043] Figure 9 This is a three-dimensional structural diagram showing the positional relationship between the coil and the fixing block of the present invention;

[0044] Figure 10 This is a three-dimensional structural diagram of the connecting block and the arc-shaped rod of the present invention.

[0045] The components in the attached diagram are labeled as follows: 1: Workbench, 2: Electric lifting frame, 3: Container box, 4: Fixed cover, 5: Covering cloth, 6: Coil, 7: First electric slide rail, 8: Push rod, 9: Connecting frame, 10: Second electric slide rail, 11: Connecting plate, 12: Moving plate, 13: Fixed block, 14: Ventilation ring, 16: Air pump, 17: First air guide pipe, 18: Magnetic suction component, 19: Second air guide pipe, 20: Connecting block, 21: Arc rod. Detailed Implementation

[0046] The above-described solution will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of this application. The implementation conditions used in the embodiments may be further adjusted according to the conditions of specific manufacturers, and the implementation conditions not specified are generally those in routine experiments.

[0047] A temperature-controlled dry etching machine, please refer to Figures 1-7 As shown, the system includes: a workbench 1; an electric lifting frame 2, located within the workbench 1, with a temperature control device (an existing heater) inside the electric lifting frame 2 to control the temperature at various locations on the silicon wafer; a container 3, fixed to the workbench 1 and located above the electric lifting frame 2, with the telescopic part of the electric lifting frame 2 extending out and sealing itself upon contact with the container 3; a fixed cover 4, fixed within the container 3, used by the electric lifting frame 2 to feed the silicon wafer into the fixed cover 4, with a plasma manufacturing module located at the top inside the fixed cover 4; and a shielding cloth 5, fixed within the fixed cover 4. The shielding cloth 5 has a cross-section consisting of two vertical surfaces and a V-shaped surface between them, and the V-shaped surface is inclined. The shielding cloth 5 is made of flame-retardant fabric. According to the etching area, the area and position of the shielding cloth 5 covering the upper side of the silicon wafer are changed, thereby changing the effect of the by-product collection area. The exhaust component is set on the holding box 3 to exhaust excess gas in the fixed cover 4. The drive component is set on the fixed cover 4 to change the covering area of ​​the shielding cloth 5. Through the cooperation of the drive component and the shielding cloth 5, the collection area of ​​by-products is changed according to the change of the etching area.

[0048] Please refer to Figure 6 and Figure 7 The shielding cloth 5 contains a coil 6 for support. The coil 6 has two ends and its projection on the horizontal plane is a ring. The coil 6 is made of high-temperature resistant metal. When the shielding cloth 5 is in the state shown in the attached figure, the coil 6 is in the initial state. At this time, the diameter of the coil 6 is larger than the diameter of the silicon wafer, so that the coil 6 will not affect the etching of the silicon wafer during the etching process.

[0049] Please refer to Figures 4-6The driving assembly includes: a first electric slide rail 7, fixedly connected to the fixed cover 4, with a first slider slidably connected inside the first electric slide rail 7, and a push rod 8 fixedly connected to the first electric slider inside the first electric slide rail 7. The first electric slide rail 7 is used to drive the push rod 8 to move laterally horizontally, and the push rod 8 is used to drive the connecting frame 9 to move back and forth horizontally; the connecting frame 9 is fixedly connected to the telescopic end of the push rod 8; and a second electric slide rail 10, fixedly connected to the side of the connecting frame 9 away from the push rod 8, with two second sliders slidably connected inside the second electric slide rail 10. Both second electric sliders inside the second electric slide rail 10... A connecting plate 11 is fixedly connected to the connecting plate 11, and a moving plate 12 is fixedly connected to the moving plate 12. A fixing block 13 for driving the coil 6 to move is fixedly connected to the moving plate 12. The fixing cover 4 is provided with two notches distributed on the left and right to provide space for the two moving plates 12 to move. When the diameter of the coil 6 changes, the coil 6 and the adjacent fixing block 13 will have relative displacement. When the silicon wafer is etched in a region, the shielding cloth 5 is driven to move to the silicon wafer etching area by the extension and retraction movement of the first electric slider of the first electric slide rail 7 and the push rod 8, so as to achieve the effect of the shielding cloth 5 moving synchronously with the etching area.

[0050] Please refer to Figure 2 and Figures 4-7 The exhaust assembly includes: a venting ring 14, fixedly connected to a fixed cover 4; an air pump 16, located inside a holding box 3 and used to extract gas from the venting ring 14; a uniformly distributed first air guide pipe 17 is fixedly connected inside the fixed cover 4; the first air guide pipe 17 is provided with several first air extraction ports; all the first air guide pipes 17 are fixedly connected to and connected to the venting ring 14; and the projections of the first air extraction ports of all the first air guide pipes 17 onto the horizontal plane are all located within the projection range of the shielding cloth 5 onto the water surface.

[0051] Please refer to Figures 7-10The lower side of the shielding cloth 5 is provided with evenly distributed magnetic suction elements 18. All magnetic suction elements 18 are magnetically connected to the coil 6, and the shielding cloth 5 is located between the coil 6 and the magnetic suction elements 18. The magnetic suction elements 18 are fixedly connected to a second air guide pipe 19 that communicates with the adjacent first air guide pipe 17. The second air guide pipe 19 can be a corrugated flexible hose to ensure linkage and extension with the magnetic suction elements 18. The second air guide pipe 19 is provided with several second air extraction ports. When the diameters of the coil 6 and the shielding cloth 5 change, the magnetic suction elements 18 move with the coil 6, so that the second air guide pipe 19 changes the extraction position of the by-product according to the reduction of the diameter of the coil 6. The second air guide pipe 19 is used to extract the by-product. The byproducts of the surrounding area are extracted, achieving the effect of focusing on extracting the byproducts while changing the diameter of the shielding cloth 5. Both ends of the coil 6 are fixedly connected to the connecting blocks 20, which are slidably connected to the other end of the coil 6. One of the connecting blocks 20 is fixedly connected to an arc-shaped rod 21 that is slidably connected to the other connecting block 20. The arc-shaped rod 21 is wound with a tension spring fixed between the two connecting blocks 20. In this device, the communication position between the air pump 16 and the ventilation ring 14 is located on the left side of the ventilation ring 14. Therefore, the diameter of all the first air guide pipes 17 and all the second air guide pipes 19 increases from left to right, thereby achieving a uniform air extraction effect.

[0052] Working principle: When it is necessary to etch a silicon wafer, the operator opens the worktable 1, then places the silicon wafer on the upper side of the electric lifting frame 2, and finally closes the worktable 1, thus completing the preparation for etching the silicon wafer.

[0053] After completing the preparation work before etching the silicon wafer, the silicon wafer is pushed into the fixed cover 4 by the electric lifting frame 2. After the telescopic part of the electric lifting frame 2 moves upward, it is sealed with the container 3. When the silicon wafer and the plasma manufacturing module at the top of the fixed cover 4 are at the distance required for the operation, the electric lifting frame 2 stops working.

[0054] After the electric lifting frame 2 stops working, the staff starts the plasma generation module and air pump 16 at the top of the fixed cover 4 through the control terminal. The plasma generation module at the top of the fixed cover 4 generates plasma to bombard the silicon wafer to etch the silicon wafer (during the etching process, the temperature of the silicon wafer is controlled by the temperature control device inside the electric lifting frame 2 to achieve temperature control of the silicon wafer).

[0055] During the etching process of the silicon wafer, the air pump 16 draws gas from the ventilation ring 14, and the ventilation ring 14 draws gas from the fixed cover 4 through all the first air guide pipes 17. The by-products generated during the etching process of the silicon wafer are intercepted by the lower part of the shielding cloth 5, reducing the residence time of the by-products in the etching chamber, and the by-products are drawn out through all the first air guide pipes 17, thereby reducing the interference with the plasma distribution.

[0056] When regional etching of the silicon wafer is required, the control terminal manipulates the first electric slider in the first electric slide rail 7 to drive the push rod 8 to move laterally, and manipulates the telescopic part of the push rod 8 to extend and retract back and forth, so that the second electric slide rail 10 drives the two connecting plates 11 to move through the two second electric sliders inside. The connecting plates 11 control the movement of the fixed block 13 through the moving plate 12, and then drive the coil 6 to translate towards the etching area through the fixed block 13. During the translation, the coil 6 slides along the lower part of the shielding cloth 5. According to the change of the etching area, the center position of the coil 6 and the lower part of the shielding cloth 5 is changed, so that the coil 6 and the lower part of the shielding cloth 5 can follow the etching area to translate, so that the by-products are extracted immediately after they are generated, further reducing the interference of by-products on plasma distribution.

[0057] When etching the silicon wafer from the outside in is required, first align the central axis of the lower part of the coil 6 and the shielding cloth 5 with the central axis of the silicon wafer (this can be achieved by controlling the movement of the first electric slider in the first electric slide rail 7 and the movement of the telescopic part of the push rod 8). Then, the control terminal controls the two second electric sliders in the second electric slide rail 10 to move towards each other simultaneously. This causes the second electric sliders to drive the two moving plates 12 to move towards each other through the two connecting plates 11. During the movement of the two moving plates 12 towards each other, the coil 6 is compressed, causing the two ends on the front side of the coil 6 to move away from each other, thereby reducing the diameter of the coil 6 (during the reduction of the diameter of the coil 6, the two connecting blocks 20 are moved away from each other, thereby stretching the tension spring on the arc rod 21). After the diameter is reduced, the lower part of the shielding cloth 5 is deformed, which in turn reduces the diameter of the lower part of the shielding cloth 5, thereby increasing the coverage area of ​​the shielding cloth 5 for by-products. Thus, the coverage area of ​​the shielding cloth 5 is gradually changed according to the area of ​​the silicon wafer being etched. During the process of by-products generated by plasma impacting the silicon wafer and sputtering in all directions, the shielding cloth 5 can intercept the by-products, cover the path of the by-products to sputtering, reduce the probability of by-products escaping, and thus improve the interception efficiency. (In the above process, by-products around are extracted through the second air guide tube 19, the effect of focusing on extracting by-products under the premise of changing the diameter of the shielding cloth 5 is achieved. When the diameters of the coil 6 and the shielding cloth 5 change, the magnetic suction component 18 moves with the coil 6.)

[0058] After etching the silicon wafer is completed, the control terminal shuts down the plasma generation module and air pump 16 at the top of the fixed cover 4. Then, the control terminal manipulates the two electric sliders in the second electric slide rail 10 to move in opposite directions simultaneously. The electric sliders drive the two moving plates 12 to move in opposite directions through the two connecting plates 11. During the movement of the two moving plates 12 in opposite directions, the coil 6 is stretched (at this time, the tension spring on the arc rod 21 contracts), increasing the diameter of the lower part of the coil 6 and the shielding cloth 5, so that the coil 6 expands again to be larger than the diameter of the silicon wafer. Then, the staff opens the worktable 1 and manipulates the electric lifting frame 2 through the control terminal to move the silicon wafer downward. Finally, the staff removes the silicon wafer. When etching the silicon wafer is needed again, the above steps are repeated.

[0059] A temperature-controlled dry etching process, please refer to... Figures 1-10 Based on the above-mentioned temperature-controlled dry etching machine, the specific steps are as follows:

[0060] Step 1: Before etching the silicon wafer, the silicon wafer is first placed into the electric lifting frame 2, and then the silicon wafer is pushed into the fixed cover 4 by the electric lifting frame 2, so that the silicon wafer and the plasma manufacturing module at the top of the fixed cover 4 are kept at the distance required for the operation.

[0061] Step 2: After the silicon wafer is placed, the plasma generation module at the top of the fixing cover 4 generates plasma to bombard the silicon wafer in order to etch it.

[0062] Step 3: During the bombardment of the silicon wafer, the air pump 16 draws gas from the fixed cover 4 through the air ring 14, the first air guide pipe 17 and the second air guide pipe 19.

[0063] Step 4: During the above process, the byproducts generated during the etching of the silicon wafer are intercepted by the lower part of the shielding cloth 5, and the byproducts are extracted in conjunction with all the first air guide tubes 17 and the second air guide tubes 19.

[0064] Step 5: When it is necessary to perform regional etching on the silicon wafer, the movement of the electric slider in the first electric slide rail 7 and the movement of the telescopic part of the push rod 8 are controlled to drive the shielding cloth 5 to move towards the etching area of ​​the silicon wafer.

[0065] Step 6: When it is necessary to etch the silicon wafer from the outside to the inside, the two electric sliders in the second electric slide rail 10 drive the two moving plates 12 to move towards each other through the two connecting plates 11. During the process of the two moving plates 12 moving towards each other, the coil 6 is squeezed, so that the two ends on the front side of the coil 6 move away from each other, thereby reducing the diameter of the coil 6, and thus gradually changing the coverage of by-products according to the area of ​​the silicon wafer being etched.

[0066] Step 7: After etching the silicon wafer is completed, shut down the plasma manufacturing module and air pump 16 at the top of the fixed cover 4, and the electric lifting frame 2 moves the silicon wafer downward to remove it.

[0067] The embodiments of the present invention are given for illustrative and descriptive purposes only, and are not intended to be exhaustive or to limit the invention to the forms disclosed. Many modifications and variations will be apparent to those skilled in the art. The embodiments were chosen and described in order to better illustrate the principles and practical application of the invention, and to enable those skilled in the art to understand the invention and to design various embodiments with various modifications suitable for a particular purpose.

Claims

1. A temperature-controlled dry etching machine, characterized in that, include: Workbench (1); An electric lifting frame (2) is installed inside the workbench (1), and a temperature control device is installed inside the electric lifting frame (2); The container (3) is fixed to the workbench (1) and located above the electric lifting frame (2). The telescopic part of the electric lifting frame (2) extends out and contacts the container (3) to seal the two. A fixed cover (4) is fixed inside the container (3). The electric lifting frame (2) is used to feed the silicon wafer into the fixed cover (4). A plasma manufacturing module is provided at the top inside the fixed cover (4). The shielding cloth (5) is fixed inside the fixed cover (4). The cross section of the shielding cloth (5) consists of two vertical surfaces and a V-shaped surface between them, and the V-shaped surface is inclined. An exhaust assembly is provided on the container (3) for exhausting excess gas inside the fixed cover (4); A driving component is disposed on the fixed cover (4) and is used to change the covering area of ​​the shielding cloth (5). Through the cooperation of the driving component and the shielding cloth (5), the collection area of ​​by-products is changed according to the change of the etching area. The shielding cloth (5) is provided with a coil (6) for supporting it. The driving component includes: The first electric slide rail (7) is fixedly connected to the fixed cover (4). A first slider is slidably connected inside the first electric slide rail (7). A push rod (8) is fixedly connected to the first electric slider inside the first electric slide rail (7). The connecting frame (9) is fixed to the telescopic end of the push rod (8); The second electric slide rail (10) is fixed to the side of the connecting frame (9) away from the push rod (8). Two second sliders are slidably connected inside the second electric slide rail (10). Both second electric sliders inside the second electric slide rail (10) are fixed to a connecting plate (11). A moving plate (12) is fixed to the connecting plate (11). A fixing block (13) for driving the coil (6) to move is fixed to the moving plate (12).

2. The temperature-controlled dry etching machine according to claim 1, characterized in that, The exhaust assembly includes: Ventilation ring (14) is fixed to the fixed cover (4); An air pump (16) is installed in the container (3) and is used to extract gas from the ventilation ring (14). A uniformly distributed first air guide pipe (17) is fixedly connected inside the fixed cover (4). The first air guide pipe (17) is provided with a number of first air extraction ports. All the first air guide pipes (17) are fixedly connected to and connected to the ventilation ring (14).

3. The temperature-controlled dry etching machine according to claim 2, characterized in that, The projection of the first air intake of all the first air ducts (17) onto the horizontal plane is located within the projection range of the shielding cloth (5) onto the water surface.

4. The temperature-controlled dry etching machine according to claim 3, characterized in that, The lower side of the shielding cloth (5) is provided with evenly distributed magnetic attracting elements (18), all of which are magnetically connected to the coil (6), and the shielding cloth (5) is located between the coil (6) and the magnetic attracting elements (18).

5. A temperature-controlled dry etching machine according to claim 4, characterized in that, The magnetic suction component (18) is fixedly connected to a second air guide pipe (19) that communicates with the adjacent first air guide pipe (17). The second air guide pipe (19) is provided with a plurality of second air extraction ports.

6. A temperature-controlled dry etching machine according to claim 5, characterized in that, The orifice diameter of all the first air guide tubes (17) and all the second air guide tubes (19) increases sequentially from the air pump (16) to the air pump (16) away.

7. A temperature-controlled dry etching machine according to claim 6, characterized in that, Both ends of the coil (6) are fixedly connected to a connecting block (20), and the connecting block (20) is slidably connected to the other end of the coil (6). One of the connecting blocks (20) is fixedly connected to an arc-shaped rod (21) that is slidably connected to the other connecting block (20). The arc-shaped rod (21) is wound with a tension spring fixed between the two connecting blocks (20).

8. A temperature-controlled dry etching process, employing the temperature-controlled dry etching machine as described in claim 7, characterized in that, The specific steps are as follows: Step 1: Before etching the silicon wafer, the silicon wafer is first placed into the electric lifting frame (2), and then the silicon wafer is pushed into the fixed cover (4) by the electric lifting frame (2) so that the silicon wafer and the plasma manufacturing module at the top of the fixed cover (4) are kept at the distance required for the operation. Step 2: After placing the silicon wafer, the plasma manufacturing module at the top of the fixing cover (4) generates plasma to bombard the silicon wafer in order to etch the silicon wafer. Step 3: During the bombardment of the silicon wafer, the air pump (16) draws gas from the fixed cover (4) through the ventilation ring (14), the first air guide pipe (17), and the second air guide pipe (19). Step 4: During the above process, the byproducts generated during the etching of the silicon wafer are intercepted by the lower part of the shielding cloth (5), and the byproducts are extracted by all the first air pipes (17) and the second air pipes (19). Step 5: When it is necessary to perform regional etching on the silicon wafer, the shielding cloth (5) is moved towards the etching area of ​​the silicon wafer by controlling the movement of the electric slider in the first electric slide rail (7) and the movement of the extension part of the push rod (8). Step 6: When it is necessary to etch the silicon wafer from the outside to the inside, the two electric sliders in the second electric slide rail (10) drive the two moving plates (12) to move towards each other through the two connecting plates (11). During the process of the two moving plates (12) moving towards each other, the coil (6) is squeezed, so that the two ends on the front side of the coil (6) move away from each other, thereby reducing the diameter of the coil (6) and gradually changing the coverage of by-products according to the area of ​​the silicon wafer being etched. Step 7: After etching the silicon wafer is completed, shut down the plasma manufacturing module and air pump (16) at the top of the fixed cover (4), and the electric lifting frame (2) moves the silicon wafer downward to remove it.

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