Method for controlling read operation of memory device

By setting a target thixotropic frequency and adjusting the thixotropic frequency according to the stable state of the data signal and the data strobe signal, the read operation of the NAND gate flash memory device is optimized, solving the problem of low read efficiency and achieving more efficient data transmission.

CN120832080APending Publication Date: 2025-10-24MACRONIX INTERNATIONAL CO LTD
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Patent Information

Application Number
CN202410598689.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-04-19
Filing Date
2024-05-14
Publication Date
2025-10-24

AI Technical Summary

Technical Problem

In read operations of NAND gate flash memory devices, the prior art requires a continuous supply of thixotropic signals until the page read operation is complete, resulting in low read efficiency, especially when the memory device controller is performing internal operations and needs to wait for a long stop period.

Method used

By setting a target thixotropic frequency and adjusting the thixotropic frequency according to the stable state of the data signal and the data strobe signal, the read operation of the memory device is optimized. This includes intermittently pausing and resuming the thixotropic signal during the read operation, and using an eye monitor to analyze latch margin to adjust the frequency and improve read efficiency.

Benefits of technology

It improves the read efficiency of memory devices, reduces waiting time, and enhances the stability and speed of data transmission.

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Abstract

The present disclosure provides a control method for controlling a read operation of a memory device, comprising the steps of: providing a thixotropic signal to the memory device, the thixotropic signal having a thixotropic frequency; performing a read operation of a page of the memory device according to the thixotropic signal, wherein the page includes a plurality of blocks; setting the thixotropic frequency as a target thixotropic frequency, and executing a read operation of the first block of the page according to the target thixotropic frequency to receive a data signal of the memory device; after the reading operation of the first block is completed, the thixotropic frequency is selectively adjusted according to the stable state of the data signal and the data strobe signal so as to execute the reading operation of a second block after the first block.
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