Method for controlling read operation of memory device
By setting a target thixotropic frequency and adjusting the thixotropic frequency according to the stable state of the data signal and the data strobe signal, the read operation of the NAND gate flash memory device is optimized, solving the problem of low read efficiency and achieving more efficient data transmission.
Patent Information
- Application Number
- CN202410598689.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-04-19
- Filing Date
- 2024-05-14
- Publication Date
- 2025-10-24
AI Technical Summary
In read operations of NAND gate flash memory devices, the prior art requires a continuous supply of thixotropic signals until the page read operation is complete, resulting in low read efficiency, especially when the memory device controller is performing internal operations and needs to wait for a long stop period.
By setting a target thixotropic frequency and adjusting the thixotropic frequency according to the stable state of the data signal and the data strobe signal, the read operation of the memory device is optimized. This includes intermittently pausing and resuming the thixotropic signal during the read operation, and using an eye monitor to analyze latch margin to adjust the frequency and improve read efficiency.
It improves the read efficiency of memory devices, reduces waiting time, and enhances the stability and speed of data transmission.