Method and system for detecting gas concentration in epitaxial growth reaction cavity, computer device and storage medium
By calibrating the wavelength and intensity of the reflected light signal and fitting it with the environmental signal, the problem of inaccurate gas concentration detection in traditional detection methods is solved, and high-precision and stable detection of gas concentration in the epitaxial growth reaction chamber is achieved.
Patent Information
- Application Number
- CN202511596156.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-04
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2045-11-04
AI Technical Summary
In traditional online monitoring epitaxial growth processes, it is impossible to detect the gas concentration in the reaction chamber in real time and accurately, which leads to drift in growth conditions, affecting the epitaxial film thickness, component ratio and defect density, and seriously affecting device performance and product yield.
By acquiring reflected light signals, reference signals, and reaction chamber environment signals, wavelength calibration and intensity baseline calibration are performed to generate experimental absorption spectra. These spectra are then fitted with target absorption spectra from a pre-set database to retrieve the concentration information of the gas to be measured.
It improves the quantitative accuracy and stability of gas concentration detection, reduces systematic errors, and achieves high-precision, long-term stable online detection.