A method for fast calibration of bdti surface potential and related apparatus

Abstract

This invention belongs to the field of semiconductor device simulation technology, and specifically relates to a method and related apparatus for rapidly calibrating the surface potential of BDTI (High K High Dielectric Tilt). The method includes: constructing a CIS BDTI device structure using simulation software; importing silicon data and calibrating the ion distribution curve in the device structure using the actual SIMS concentration as a reference to obtain a concentration-calibrated device simulation model; replacing the high dielectric constant layer on the surface of the concentration-calibrated device simulation model with an electrode layer; and importing the potential of the high dielectric constant layer of the actual device into the electrode layer to complete the device surface potential calibration. This invention, by directly replacing the high dielectric constant layer with an electrode layer, allows its potential to be directly determined as the actual measured potential of the high dielectric constant layer, avoiding the process of multiple data acquisitions and continuous addition and adjustment of positive and negative charges to continuously adjust the potential value of the High K material, thus significantly shortening the calibration process.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device simulation technology, and specifically relates to a method and related apparatus for rapidly calibrating the surface potential of BDTI. Background Technology

[0002] Please see Figure 1 and Figure 2 As shown, the current method for simulating the CIS BDTI structure model (CMOS Image Sensor (CIS), Backside Deep Trench Isolation (BDTI)) includes the following steps:

[0003] 1) Device structure construction:

[0004] Using simulation software, a structural model of the CIS BDTI device is constructed based on the structure, dimensions, and material data of the actual physical device, serving as the foundational framework for subsequent analysis. The simulation software can utilize Technology Computer-Aided Design (TCAD) software.

[0005] 2) Concentration distribution calibration:

[0006] Import silicon (Si) related data, including electrical parameters, concentration distribution data, and dimensions; calibrate the concentration distribution curve (profile) inside the device using SIMS (Secondary Ion Mass Spectroscopy) concentration to make the initial state of the simulation closely resemble the physical characteristics of the actual semiconductor device.

[0007] 3) Charge and potential calibration (for High K materials):

[0008] Increase and adjust positive and negative charges to calibrate the potential value of the BDTI surface High K (high dielectric constant) material.

[0009] By changing the charge and calibrating the potential value of the region, the potential exhibited by the High K material in the simulation is made as close as possible to the potential of the material in the real device.

[0010] 4) Potential consistency detection:

[0011] Extract the potential data of the High K dielectric on the BDTI surface in the simulation and compare it with the actual potential value obtained by measuring silicon devices (such as probe testing) to determine whether the two are consistent.

[0012] 5) Cyclic calibration (if inconsistent):

[0013] If the test finds that the simulated potential and the actual measured value are "inconsistent", return to the step of "adding and adjusting positive and negative charges to calibrate the potential value of the BDTI surface High K material", repeat the process of adjusting the charge and retesting until the potential data match.

[0014] 6) Complete calibration (if consistent):

[0015] When it is detected that "the potential of the High K dielectric on the BDTI surface is consistent with the actual Si measurement value", the BDTI surface potential calibration process ends, and the calibrated simulation model is obtained, which can be used for subsequent more accurate device characteristic analysis.

[0016] Figure 1 In this context, PW ISO stands for P-type Well Isolation; LDD stands for Lightly Doped Drain; Poly-TX stands for Polysilicon Gate; Pin-IMP stands for Pin Implation; P-type stands for P-type Substrate; PD stands for Photo Diode; and FD stands for Floating Diffusion.

[0017] In existing simulation processes, positive and negative charges are usually added to the film layer of BDTI to characterize the actual potential value. However, this method requires continuous trial and error and adjustment, which is time-consuming and inefficient, and is not conducive to the establishment of simulation models. Summary of the Invention

[0018] The purpose of this invention is to provide a method and related apparatus for rapidly calibrating the surface potential of BDTI, so as to solve the technical problems of long time and slow efficiency of existing calibration methods.

[0019] To achieve the above objectives, the present invention adopts the following technical solution:

[0020] In a first aspect, the present invention provides a method for rapidly calibrating the surface potential of BDTI, comprising:

[0021] The CIS BDTI device structure was constructed using simulation software;

[0022] Import silicon data and use the actual value of SIMS concentration as a reference to calibrate the ion distribution curve in the CIS BDTI device structure to obtain a concentration distribution-calibrated CIS BDTI device simulation model.

[0023] The high dielectric constant layer on the surface of the concentration distribution-calibrated CIS BDTI device simulation model was replaced with an electrode layer;

[0024] The potential of the high dielectric constant layer of the CIS BDTI device, which was actually measured, was introduced into the electrode layer to complete the surface potential calibration of the CIS BDTI device.

[0025] A further improvement of the present invention is that the step of building the CIS BDTI device structure through simulation software specifically includes: building the CIS BDTI device structure through the CIS graphics data system layer and manufacturing process information.

[0026] A further improvement of the present invention is that: in the step of importing silicon data and using the actual value of SIMS concentration as a reference to calibrate the ion distribution curve in the CIS BDTI device structure to obtain a concentration distribution-calibrated CIS BDTI device simulation model, the imported silicon data includes: the size data of the CIS BDTI device measured in real time by an online detection device.

[0027] A further improvement of the present invention is that: in the step of replacing the surface high dielectric constant layer of the concentration distribution calibrated CIS BDTI device simulation model with the electrode layer, the surface high dielectric constant layer and the electrode layer have the same physical size, and the high dielectric constant material of the high dielectric constant layer is replaced with the electrode layer material.

[0028] A further improvement of the present invention is that: in the step of replacing the surface high dielectric constant layer of the concentration distribution-calibrated CIS BDTI device simulation model with an electrode layer, the material of the electrode layer is metal.

[0029] A further improvement of the present invention is that: in the step of replacing the surface high dielectric constant layer of the concentration distribution calibrated CIS BDTI device simulation model with an electrode layer, the material of the electrode layer is aluminum, copper, silver or gold.

[0030] Secondly, the present invention provides an apparatus for rapidly calibrating the surface potential of BDTI, comprising:

[0031] The module is used to build the CIS BDTI device structure using simulation software;

[0032] The first calibration module is used to import silicon data and, using the actual value of SIMS concentration as a reference, calibrate the ion distribution curve in the CIS BDTI device structure to obtain a concentration distribution-calibrated CIS BDTI device simulation model.

[0033] Replacement module, used to replace the surface high dielectric constant layer of the concentration distribution calibrated CIS BDTI device simulation model with an electrode layer;

[0034] The second calibration module is used to introduce the potential of the high dielectric constant layer of the CIS BDTI device into the electrode layer to complete the surface potential calibration of the CIS BDTI device.

[0035] A further improvement of the present invention is that: in the step of replacing the surface high dielectric constant layer of the concentration distribution calibrated CIS BDTI device simulation model with the electrode layer in the replacement module, the surface high dielectric constant layer and the electrode layer have the same physical size, and the high dielectric constant material of the high dielectric constant layer is replaced with the metal material of the electrode layer.

[0036] Thirdly, the present invention provides an electronic device including a processor and a memory, the processor being configured to execute a computer program stored in the memory to implement the aforementioned method for rapidly calibrating BDTI surface potential.

[0037] Fourthly, the present invention provides a computer-readable storage medium storing at least one instruction that, when executed by a processor, implements the method for rapidly calibrating BDTI surface potential.

[0038] Compared with the prior art, the present invention has the following unexpected technical effects:

[0039] This invention provides a method for rapidly calibrating the surface potential of BDTI (High-K Dielectric Tire) devices, comprising: constructing a CIS BDTI device structure using simulation software; importing silicon data and calibrating the ion distribution curve in the CIS BDTI device structure using the actual SIMS concentration as a reference to obtain a concentration-calibrated CIS BDTI device simulation model; replacing the high-dielectric-constant layer on the surface of the concentration-calibrated CIS BDTI device simulation model with an electrode layer; and importing the potential of the high-dielectric-constant layer of the actually measured CIS BDTI device into the electrode layer to complete the surface potential calibration of the CIS BDTI device. This invention directly replaces the high-dielectric-constant layer on the surface of the CIS BDTI device simulation model with an electrode layer, allowing its potential to be directly determined as the potential of the actually measured high-dielectric-constant layer. This avoids the process of multiple data acquisitions and continuous addition and adjustment of positive and negative charges to continuously adjust the potential value of the High K material on the BDTI surface, as required by existing technologies. This significantly shortens the calibration process and ensures consistent experimental results. Attached Figure Description

[0040] The accompanying drawings, which form part of this specification, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0041] Figure 1A schematic diagram of the CIS BDTI structural model;

[0042] Figure 2 A flowchart illustrating the method for simulating the CIS BDTI structural model using existing technology;

[0043] Figure 3 This is a flowchart illustrating a method for rapidly calibrating the surface potential of BDTI according to an embodiment of the present invention;

[0044] Figure 4 The simulation potential distribution results are shown in the background section, utilizing the existing calibration process.

[0045] Figure 5 The image shows the simulated potential distribution after calibration using a method for rapidly calibrating the surface potential of BDTI according to an embodiment of the present invention.

[0046] Figure 6 For along Figure 4 and Figure 5 Comparison of potential distribution simulations along the mid-section line;

[0047] Figure 7 This is a schematic diagram of a device for rapidly calibrating the surface potential of BDTI according to an embodiment of the present invention;

[0048] Figure 8 This is a schematic diagram of the structure of an electronic device according to the present invention. Detailed Implementation

[0049] The present invention will now be described in detail with reference to the accompanying drawings and embodiments. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.

[0050] The following detailed description is exemplary and intended to provide further detailed explanation of the invention. Unless otherwise specified, all technical terms used in this invention have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in this invention is for describing particular embodiments only and is not intended to limit the scope of exemplary embodiments according to the invention.

[0051] Please see Figure 3 As shown, this embodiment of the invention provides a method for rapidly calibrating the surface potential of BDTI, comprising the following steps:

[0052] S100. Construct the CIS BDTI device structure using simulation software:

[0053] The structure of the CIS BDTI device was built using simulation software; the basic structural framework of the CIS (CMOS Image Sensor) was built using the GDS layer (Graphic Data System layer) and process flow information.

[0054] S200. Import silicon data and use the actual SIMS concentration as a reference to calibrate the ion distribution curve in the CIS BDTI device structure, obtaining a concentration distribution-calibrated CIS BDTI device simulation model:

[0055] Import silicon data, such as key layer inline CD data (space thickness, screen oxide thickness), to refine the details of the basic CIS structural framework. Use the actual SIMS concentration as a reference to calibrate the ion distribution curve in the simulation model structure, thus obtaining a concentration-calibrated CIS BDTI device simulation model.

[0056] In one specific implementation, the key layer refers to the core layer that plays a decisive role in the performance of the CIS, such as the active region of the photodiode (PD), the gate of the transmission gate (TX), the isolation trench, etc.

[0057] In one specific implementation, Inline CD data refers to key dimensional data measured in real time during semiconductor manufacturing using online inspection equipment (such as a scanning electron microscope, SEM), including:

[0058] Space thickness: refers to the thickness of the isolation area between adjacent pattern structures (such as metal lines and gates).

[0059] Screen oxide thickness: The thickness of the shielding oxide layer.

[0060] S300, Replace the high dielectric constant layer on the surface of the concentration distribution-calibrated CIS BDTI device simulation model with an electrode layer:

[0061] The surface high dielectric constant layer (High K layer) of the CIS BDTI device simulation model calibrated by concentration distribution is directly replaced with the electrode layer;

[0062] In one specific embodiment, the present invention directly replaces the surface high dielectric constant layer (High K layer) of the CIS BDTI device simulation model with an electrode layer, that is, replaces the high dielectric constant material of the high dielectric constant layer with a metal material, while keeping the physical dimensions unchanged; the material of the electrode layer can be a good conductive metal such as aluminum, copper, silver, or gold.

[0063] S400. The potential of the high dielectric constant layer of the CIS BDTI device, which was actually measured, is introduced into the electrode layer to complete the surface potential calibration of the CIS BDTI device:

[0064] The potential of the high dielectric constant layer (High K layer) measured in practice is directly introduced into the replaced electrode layer to complete the surface potential calibration of the CIS BDTI device.

[0065] In one specific embodiment, the high dielectric constant layer (High K layer) is not a conductor and can only be simulated by charge simulation. In this invention, the high dielectric constant layer (High K layer) is replaced with a metal electrode layer, which is a conductor and its potential value can be directly defined. The potential of the high dielectric constant layer (High K layer) is directly imported into the replaced electrode layer, so that the surface potential of the CIS BDTI device can be simulated realistically and accurately.

[0066] Please see Figures 4 to 6 As shown, Figure 4 To utilize the simulated potential distribution results from the existing calibration process in the background art; Figure 5 The simulated potential distribution results are obtained after calibration using a method for rapidly calibrating the surface potential of BDTI according to an embodiment of the present invention. Figure 6 This is a simulated potential distribution diagram of the cross-sectional line; from Figures 4 to 6 It can be intuitively seen that the simulated potential distribution results after calibration using the method for rapid calibration of BDTI surface potential according to an embodiment of the present invention are consistent with the simulated potential distribution results using the existing calibration process in the background art. The present invention directly replaces the high dielectric constant layer on the surface of the CIS BDTI device simulation model with an electrode layer, and replaces non-metallic materials with metallic materials, so that its potential can be directly determined as the actual measured potential of the high dielectric constant layer. This avoids the process of multiple samplings and continuous addition and adjustment of positive and negative charges to continuously adjust the potential value of the High K material on the BDTI surface, as required by the prior art, significantly shortening the calibration process, and ensuring consistent experimental results. Figures 4-5 In this context, PD stands for Photo Diode; TG stands for Transfer Gate; FD stands for Floating Diffusion; and pin stands for Pinning Layer.

[0067] Please refer to Table 1. The method of this invention can calibrate the surface potential of CIS BDTI devices in one step, avoiding the iterative process in the prior art that requires multiple iterations to continuously increase and adjust the positive and negative charges in order to continuously adjust the potential value of the High K material on the BDTI surface. Each iteration experiment takes 7-8 hours, and usually at least 3 iterations are required to achieve the calibration effect. In contrast, the method of this invention directly replaces the high dielectric constant layer on the surface of the CIS BDTI device simulation model with the electrode layer and replaces the non-metallic material with the metallic material, so that its potential can be directly determined as the potential of the actual measured high dielectric constant layer. This avoids the multiple processes in the prior art and can complete the calibration work in one step, taking only one-third of the time of the prior art.

[0068] Table 1 Comparison of Technical Effects

[0069]

[0070] Please see Figure 7 As shown, the present invention provides a device for rapidly calibrating the surface potential of BDTI, comprising:

[0071] The module is used to build the CIS BDTI device structure using simulation software;

[0072] The first calibration module is used to import silicon data and, using the actual value of SIMS concentration as a reference, calibrate the ion distribution curve in the CIS BDTI device structure to obtain a concentration distribution-calibrated CIS BDTI device simulation model.

[0073] Replacement module, used to replace the surface high dielectric constant layer of the concentration distribution calibrated CIS BDTI device simulation model with an electrode layer;

[0074] The second calibration module is used to introduce the potential of the high dielectric constant layer of the CIS BDTI device into the electrode layer to complete the surface potential calibration of the CIS BDTI device.

[0075] In one specific implementation, the construction module constructs the CIS BDTI device structure using simulation software; it constructs the basic structural framework of the CIS (CMOS Image Sensor, or CIS) using the GDS layer (Graphic Data System layer) and process flow information; the simulation software can be TCAD-type software for simulation.

[0076] In one specific implementation, the first calibration module imports silicon data, such as key layer inline CD data, including space thickness and screen oxide thickness, to correct the details of the basic structural framework of the CIS; and uses the actual value of the SIMS concentration as a reference to calibrate the ion distribution curve in the simulation model structure to obtain a concentration distribution-calibrated CIS BDTI device simulation model.

[0077] In one specific implementation, the key layer refers to the core layer that plays a decisive role in the performance of the CIS, such as the active region of the photodiode (PD), the gate of the transmission gate (TX), the isolation trench, etc.

[0078] In one specific implementation, Inline CD data refers to key dimensional data measured in real time during semiconductor manufacturing using online inspection equipment (such as a scanning electron microscope, SEM), including:

[0079] Space thickness: refers to the thickness of the isolation area between adjacent pattern structures (such as metal lines and gates).

[0080] Screen oxide thickness: The thickness of the shielding oxide layer.

[0081] In one specific implementation, the replacement module directly replaces the surface high dielectric constant layer (High K layer) of the concentration distribution-calibrated CIS BDTI device simulation model with the electrode layer;

[0082] In one specific embodiment, the present invention directly replaces the surface high dielectric constant layer (High K layer) of the CIS BDTI device simulation model with an electrode layer, that is, replaces the high dielectric constant material of the high dielectric constant layer with a metal material, while keeping the physical dimensions unchanged; the material of the electrode layer can be a good conductive metal such as aluminum, copper, silver, or gold.

[0083] This invention provides a device for rapidly calibrating the surface potential of BDTI. By directly replacing the high dielectric constant layer on the surface of the CIS BDTI device simulation model with an electrode layer and replacing the non-metallic material with a metallic material, the potential can be directly determined as the actual measured potential of the high dielectric constant layer. This avoids the process of repeatedly acquiring data and continuously adding and adjusting positive and negative charges to adjust the potential value of the High K material on the BDTI surface, as required by existing technologies, and significantly shortens the calibration process.

[0084] Existing calibration methods typically require at least three iterations to achieve the desired calibration effect. However, this invention directly replaces the high dielectric constant layer on the surface of the CIS BDTI device simulation model with an electrode layer and replaces non-metallic materials with metallic materials. This allows the potential to be directly determined as the actual measured potential of the high dielectric constant layer, avoiding the multiple processes required in existing technologies. The calibration can be completed in one step, taking less than one-third the time of existing technologies, thus significantly improving calibration efficiency.

[0085] Please see Figure 8 As shown, this embodiment of the invention provides an electronic device 100 for implementing a method for rapidly calibrating BDTI surface potential; the electronic device 100 includes a memory 101, at least one processor 102, a computer program 103 stored in the memory 101 and executable on the at least one processor 102, and at least one communication bus 104.

[0086] The memory 101 can be used to store the computer program 103. The processor 102 implements the steps of the method for rapidly calibrating the BDTI surface potential described above by running or executing the computer program stored in the memory 101 and calling the data stored in the memory 101. The memory 101 may mainly include a program storage area and a data storage area. The program storage area may store the operating system, at least one application program required for a function (such as sound playback function, image playback function, etc.), etc.; the data storage area may store data created according to the use of the electronic device 100 (such as audio data), etc. In addition, the memory 101 may include non-volatile memory, such as hard disk, memory, plug-in hard disk, smart media card (SMC), secure digital (SD) card, flash card, at least one disk storage device, flash memory device, or other non-volatile solid-state storage device.

[0087] The at least one processor 102 may be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The processor 102 may be a microprocessor or any conventional processor. The processor 102 is the control center of the electronic device 100, connecting various parts of the electronic device 100 via various interfaces and lines.

[0088] The memory 101 in the electronic device 100 stores multiple instructions to implement a method for rapidly calibrating BDTI surface potential, and the processor 102 can execute the multiple instructions to achieve the following:

[0089] The CIS BDTI device structure was constructed using simulation software;

[0090] Import silicon data and use the actual value of SIMS concentration as a reference to calibrate the ion distribution curve in the CIS BDTI device structure to obtain a concentration distribution-calibrated CIS BDTI device simulation model.

[0091] The high dielectric constant layer on the surface of the concentration distribution-calibrated CIS BDTI device simulation model was replaced with an electrode layer;

[0092] The potential of the high dielectric constant layer of the CIS BDTI device, which was actually measured, was introduced into the electrode layer to complete the surface potential calibration of the CIS BDTI device.

[0093] If the modules / units integrated in the electronic device 100 are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include: any entity or device capable of carrying the computer program code, a recording medium, a USB flash drive, a portable hard drive, a magnetic disk, an optical disk, a computer memory, and a read-only memory (ROM).

[0094] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0095] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0096] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0097] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0098] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A method for rapidly calibrating the surface potential of BDTI, characterized in that, include: The CIS BDTI device structure was constructed using simulation software; Import silicon data and use the actual value of SIMS concentration as a reference to calibrate the ion distribution curve in the CIS BDTI device structure to obtain a concentration distribution-calibrated CIS BDTI device simulation model. The high dielectric constant layer on the surface of the concentration distribution-calibrated CIS BDTI device simulation model was replaced with an electrode layer; The potential of the high dielectric constant layer of the CIS BDTI device, which was actually measured, was introduced into the electrode layer to complete the surface potential calibration of the CIS BDTI device.

2. The method for rapidly calibrating the surface potential of BDTI according to claim 1, characterized in that, The steps of building the CIS BDTI device structure using simulation software specifically include: building the CIS BDTI device structure using the CIS graphics data system layer and manufacturing process information.

3. The method for rapidly calibrating the surface potential of BDTI according to claim 1, characterized in that, In the step of importing silicon data and using the actual value of SIMS concentration as a reference to calibrate the ion distribution curve in the CIS BDTI device structure to obtain a concentration distribution-calibrated CIS BDTI device simulation model, the imported silicon data includes: the size data of the CIS BDTI device measured in real time by an online detection device.

4. The method for rapidly calibrating the surface potential of BDTI according to claim 1, characterized in that, In the step of replacing the surface high dielectric constant layer of the concentration distribution-calibrated CIS BDTI device simulation model with the electrode layer, the surface high dielectric constant layer and the electrode layer have the same physical size, and the high dielectric constant material of the high dielectric constant layer is replaced with the electrode layer material.

5. The method for rapidly calibrating the surface potential of BDTI according to claim 1, characterized in that, In the step of replacing the high dielectric constant layer on the surface of the concentration distribution-calibrated CIS BDTI device simulation model with an electrode layer, the material of the electrode layer is metal.

6. The method for rapidly calibrating the surface potential of BDTI according to claim 1, characterized in that, In the step of replacing the high dielectric constant layer on the surface of the concentration distribution-calibrated CIS BDTI device simulation model with an electrode layer, the material of the electrode layer is aluminum, copper, silver, or gold.

7. A device for rapidly calibrating the surface potential of BDTI, characterized in that, include: The module is used to build the CIS BDTI device structure using simulation software; The first calibration module is used to import silicon data and use the actual value of SIMS concentration as a reference to calibrate the ion distribution curve in the CIS BDTI device structure, thereby obtaining a concentration distribution-calibrated CIS BDTI device simulation model. Replacement module, used to replace the surface high dielectric constant layer of the concentration distribution calibrated CIS BDTI device simulation model with an electrode layer; The second calibration module is used to introduce the potential of the high dielectric constant layer of the CIS BDTI device into the electrode layer to complete the surface potential calibration of the CIS BDTI device.

8. The apparatus for rapidly calibrating the surface potential of BDTI according to claim 7, characterized in that, In the step of replacing the surface high dielectric constant layer of the concentration distribution-calibrated CIS BDTI device simulation model with the electrode layer, the surface high dielectric constant layer and the electrode layer have the same physical size, and the high dielectric constant material of the high dielectric constant layer is replaced with the metal material of the electrode layer.

9. An electronic device, characterized in that, It includes a processor and a memory, the processor being configured to execute a computer program stored in the memory to implement a method for rapidly calibrating the surface potential of BDTI as described in any one of claims 1 to 6.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores at least one instruction that, when executed by a processor, implements a method for rapidly calibrating the surface potential of a BDTI as described in any one of claims 1 to 6.

Images