Photosensitive chip

Abstract

The invention discloses a photosensitive chip which comprises a photosensitive module, a discharging module and a light-operated switch. The first end of the photosensitive module is connected to the positive electrode; the discharge module is connected between the positive electrode and the negative electrode; and the light-operated switch is coupled between the second end of the light sensing module and the negative electrode and controls the discharge path of the discharge module at the same time. The core of the invention lies in that the intelligent mutual exclusion control of the power supply and discharge paths is realized through the light-operated switch: under the condition of light, the light-operated switch conducts an output path from the light sensing module to the negative electrode, supplies power to the post-stage power module and simultaneously cuts off the discharge path of the discharge module, and under the condition of no light, the light-operated switch automatically cuts off the power supply path, so that the power supply and the discharge path are switched off. And a discharge path of the discharge module is immediately conducted, and charges accumulated by a post-stage power module are quickly released. Compared with the prior art, the automatic light-operated synchronization in the discharging process is ensured, meanwhile, the light current of the photosensitive module is not consumed additionally, and the light voltage output of the photosensitive chip is improved.

Description

Technical Field

[0001] This invention relates to the field of photosensitive circuit technology, and more particularly to a photosensitive chip. Background Technology

[0002] The discharge control circuit of a photosensitive chip is an important circuit structure of the photosensitive chip.

[0003] A photosensitive chip is a type of chip that converts light signals into electrical signals and outputs a photovoltage. The chip's surface has an array of photodiodes forming a photosensitive area. When the photodiode array receives a light signal, it generates a photovoltage, which can turn the downstream "power module" on or off. In practical applications, photosensitive chips can quickly turn on the "power module," but the time to turn it off is relatively long. This is mainly because the charge accumulated in the "power module" dissipates slowly, so a discharge module needs to be integrated inside the photosensitive chip.

[0004] The working principle of existing photosensitive chip architecture: When the photodiode array on the surface of the photosensitive chip receives a light signal, it generates a photovoltage that turns off the depletion-type MOS in the discharge module. While closing this discharge channel, it simultaneously drives the downstream power module to operate. When there is no light signal, the photodiode array does not generate a photovoltage. At this time, the depletion-type MOS in the discharge module conducts, and the downstream power module discharges rapidly through this discharge circuit, thereby achieving rapid disconnection and cessation of operation of the power module. Figure 1 As shown.

[0005] In traditional photosensitive chips, when driving the power module, the photosensitive module needs to shun part of the photocurrent to turn off the depletion-type MOSFET in the discharge module, thereby reducing the total output photocurrent and limiting the photovoltage output of the photosensitive chip. Summary of the Invention

[0006] The purpose of this invention is to provide a novel photosensitive chip architecture. By optimizing the discharge module circuit, the consumption of photocurrent generated by the discharge module on the photosensitive module is reduced, thereby improving the photovoltage output of the photosensitive chip without changing the photosensitive area of ​​the photosensitive module. Furthermore, by flexibly configuring the photosensitive area position of the photocontrol switch, the photosensitive chip can be guaranteed for different application scenarios.

[0007] Technical solution: A photosensitive chip, comprising: The photosensitive module has its first end electrically connected to the positive electrode, which is used to receive light signals and generate photovoltage. A discharge module is connected between the positive electrode and the negative electrode, and is connected in parallel with the photosensitive module; A light-controlled switch, comprising one or more photosensitive elements; The light-controlled switch is configured to be coupled between the second end of the photosensitive module and the negative electrode, and simultaneously coupled to the discharge path of the discharge module; The operating state of the light-controlled switch is controlled by light illumination: When it receives a light signal, the light control switch establishes an output path from the second end of the photosensitive module to the negative electrode and shuts off the leakage path of the discharge module, so that the photovoltage generated by the photosensitive module can be provided to the subsequent power module connected between the positive electrode and the negative electrode. When it does not receive a light signal, the light control switch disconnects the output path of the photosensitive module and opens the discharge path of the discharge module, so that the charge accumulated in the downstream power module is released through the discharge path.

[0008] Furthermore, the photosensitive module is a photodiode array.

[0009] Furthermore, the discharge module's leakage path is a PNPN type semiconductor control structure, and the light-controlled switch includes a first photosensitive device and a second photosensitive device; The first photosensitive device is connected between the positive electrode and the first control terminal of the PNPN type semiconductor control structure; The second photosensitive device is connected between the negative electrode and the second control terminal of the PNPN type semiconductor control structure; The second control terminal of the PNPN type semiconductor control structure is electrically connected to the second terminal of the photosensitive module; The first and second photosensitive devices are configured to: bias the two control terminals of the PNPN type semiconductor control structure into an off state when light is received; and allow the PNPN type semiconductor control structure to conduct when there is no light. The second photosensitive device is further configured to: turn on the output path of the photosensitive module when light is received; and turn off the output path of the photosensitive module when there is no light.

[0010] Furthermore, the PNPN type semiconductor control structure is composed of a PNP transistor Q1 and an NPN transistor Q2; The emitter of Q1 is connected to the positive electrode as one end of the leakage path; The emitter of Q2 is connected to the negative electrode as the other end of the leakage path; The base of Q1 is connected to the collector of Q2 to form the first control terminal; The collector of Q1 is connected to the base of Q2, forming the second control terminal; The first photosensitive device is a first phototransistor Q3, whose collector is connected to the positive electrode and whose emitter is connected to the first control terminal; The second photosensitive device is a second phototransistor Q4, whose collector is connected to the negative electrode and whose emitter is connected to the second control terminal or the second terminal of the photosensitive module.

[0011] Furthermore, the semiconductor substrate of the photosensitive chip is divided into a positive electrode, a negative electrode, a first photosensitive area for setting the photosensitive module, a second photosensitive area for setting the light control switch, and a discharge module area for setting the discharge module.

[0012] Furthermore, the discharge module region, the positive electrode, and the negative electrode are located on the same side of the first photosensitive region, and the discharge module region is located between the positive electrode and the negative electrode.

[0013] Furthermore, the second photosensitive area is located in the discharge module area.

[0014] Furthermore, the second photosensitive area is embedded in the photosensitive module area.

[0015] Beneficial effects Compared with the prior art, the beneficial effects of the present invention are as follows: 1. By modifying the structure of the discharge module's leakage path to a PNPN type semiconductor control structure and adding a light-controlled switch, the photoelectric characteristics of the phototransistor in the light-controlled switch are used to control the opening and closing of the discharge module's leakage path. This does not consume the photocurrent of the photosensitive module, allowing the photosensitive module to output a larger photovoltage to the subsequent stage while keeping the photosensitive area unchanged.

[0016] 2. By flexibly configuring the position of the photosensitive area of ​​the photocontrol switch in the discharge module, different application scenarios of the photosensitive chip can be realized. If the photosensitive area of ​​the photosensitive switch is set in the discharge module area, the output capability of the photosensitive chip can be maximized and it can be applied to the traditional through-beam packaging structure; if the photosensitive area of ​​the photosensitive switch is set in the photosensitive module area, the photosensitive chip can be applied to the stacked packaging structure. Attached Figure Description

[0017] Figure 1 This is a diagram showing the traditional photosensitive chip architecture and circuit diagram; Figure 2 This is the photosensitive chip architecture and corresponding block diagram of the present invention; Figure 3 This is a circuit schematic diagram of an embodiment of the present invention; Figure 4 This is a comparison diagram of the working current direction and the discharge current direction according to an embodiment of the present invention; Figure 5 This is another photosensitive chip architecture of the present invention. Detailed Implementation

[0018] To further illustrate the various embodiments, the present invention provides accompanying drawings. These drawings are part of the disclosure of the present invention, primarily used to illustrate the embodiments and to explain the operating principles of the embodiments in conjunction with the relevant descriptions in the specification. With reference to these drawings, those skilled in the art should be able to understand other possible implementations and the advantages of the present invention. Components in the drawings are not drawn to scale, and similar component symbols are generally used to represent similar components.

[0019] The present invention will now be further described in conjunction with the accompanying drawings and specific embodiments.

[0020] Example 1: Please see Figure 2 This illustrates a preferred embodiment of the photosensitive chip 100 of the present invention. The chip mainly includes a photosensitive module 10, a discharge module 20, a light control switch 50, a positive electrode 30, and a negative electrode 40.

[0021] The photosensitive module 10 is the core component of the chip for photoelectric conversion. In this embodiment, it consists of multiple photodiodes connected in parallel or a series-parallel hybrid array, which is arranged entirely within the photosensitive area 11 of the chip. The first end of the photosensitive module 10 is connected to the positive electrode 30, and its second end is connected to the negative electrode 40. When a light signal illuminates the photosensitive area 11, the photodiode array generates a photoelectric electromotive force, forming a photovoltage between the positive electrode 30 and the negative electrode 40, which is then transmitted to the subsequent power module 200.

[0022] The discharge module 20 is connected in parallel with the photosensitive module 10, bridging the positive electrode 30 and the negative electrode 40, and is located in the discharge module area 21 of the chip.

[0023] The core of this invention lies in the provision of a light-controlled switch 50, which includes one or more photosensitive devices and a discharge path for a discharge module 20 controlled by the light-controlled switch 50. The photosensitive area 51 of the light-controlled switch 50 is arranged in a separate region of the chip.

[0024] Example 1: Drainage path based on PNPN structure and dual phototransistors like Figure 3 As shown, in an innovative embodiment, the discharge module 20 includes a PNP transistor Q1, an NPN transistor Q2, and phototransistors Q3 and Q4.

[0025] In this structure, the collector-base cross-coupled of Q1 and Q2 together form a PNPN structure leakage path (similar to a thyristor structure), which is connected between the positive electrode 30 and the negative electrode 40.

[0026] Phototransistor Q3 is connected between the positive electrode 30 and the collector of NPN transistor Q2.

[0027] The phototransistor Q4 is connected between the negative electrode 40 and the second end of the photosensitive module 10.

[0028] The phototransistors Q3 and Q4 are combined to form the light-controlled switch 50 of the discharge module 20.

[0029] like Figure 4 As shown, its collaborative working principle is: When there is light: Q3 and Q4 are turned on, clamping the base potential of Q2 and the base potential of Q1 (through internal coupling), so that the leakage path of the PNPN structure cannot be opened (off state).

[0030] In the absence of light: Q3 and Q4 are cut off, releasing the clamping force on the PNPN structure. When the voltage of the subsequent power module is applied to the leakage path, and in conjunction with the leakage current of the photosensitive device itself, Q1 and Q2 will quickly enter the saturation conduction state, the leakage path will be opened, and rapid discharge will be achieved.

[0031] The positive electrode 30 and the negative electrode 40 serve as the output terminals of the photosensitive chip 100, used to connect to an external back-end power module 200 (such as the gate drive circuit of a MOSFET, IGBT, or other types of power switching device). The power module 200 performs on / off operations based on the voltage signal output by the photosensitive chip 100.

[0032] The working principle of this invention is as follows: Stage with light signal: The photosensitive area 11 of the photosensitive module 10 is photosensitive, and the photodiode array inside it generates photovoltage, which is output through the positive electrode 30 and the negative electrode 40 to drive the back-end power module 200 into the working state (such as being turned on).

[0033] At the same time, the light-controlled switch 50 in the discharge module 20 is illuminated, and its state change ensures that the leakage path is in the off state, preventing energy leakage and ensuring drive efficiency.

[0034] Phase without light signal: The photosensitive module 10 stops generating photovoltage.

[0035] The light-controlled switch 50 in the discharge module 20 flips its state (from on to off, or from off to on) when there is no light, which, together with the leakage current of the photosensitive device itself, triggers the discharge path to open. The charge stored inside the power module 200 (such as the gate capacitor) is rapidly discharged through this path, causing the voltage across the power module 200 to drop rapidly, thereby achieving its fast and reliable shutdown.

[0036] In summary, this invention effectively solves the problem that traditional discharge circuits based on depletion-mode MOS transistor architecture require additional photocurrent from the photosensitive module to start and stop, thus reducing the photovoltage output capability of the photosensitive module when the photosensitive area remains unchanged. This is achieved by adding a light-controlled switch 50 and utilizing its photoelectric characteristics to control the on / off state of the PNPN type semiconductor control structure of the discharge module 20.

[0037] The photosensitive chip circuit of the present invention also has the following beneficial effects: The position of the photosensitive area 51 of the light-controlled switch 50 can be flexibly configured according to actual needs. For example... Figure 2 As shown, it can be placed within the discharge module area 21 to maximize the output capability of the photosensitive chip. However, this configuration is only suitable for through-beam packaging structures and not for stacked packaging structures.

[0038] On the other hand, such as Figure 5 As shown, the photosensitive area 51 of the light-controlled switch 50 can also be embedded within the photosensitive module area 11. This layout allows the chip to adapt to the requirements of a stacked packaging structure.

[0039] This flexible configuration allows photosensitive chips to be designed and adjusted in an optimal manner according to different application scenarios and packaging requirements.

[0040] Although the invention has been specifically shown and described in conjunction with preferred embodiments, those skilled in the art should understand that various changes in form and detail may be made to the invention without departing from the spirit and scope of the invention as defined in the appended claims, all of which shall be within the scope of protection of the invention.

Claims

1. A photosensitive chip, characterized in that, include: The photosensitive module (10) has its first end electrically connected to the positive electrode (30) for receiving light signals and generating photovoltage; A discharge module (20) is connected between the positive electrode (30) and the negative electrode (40) and is connected in parallel with the photosensitive module (10); A light-controlled switch (50) includes one or more photosensitive devices; The light control switch (50) is configured to be coupled between the second end of the photosensitive module (10) and the negative electrode (40), and simultaneously coupled to the leakage path of the discharge module (20); The operating state of the light-controlled switch (50) is controlled by light: When it receives a light signal, the light control switch (50) establishes an output path from the second end of the photosensitive module (10) to the negative electrode (40) and shuts off the leakage path of the discharge module (20), so that the photovoltage generated by the photosensitive module (10) can be provided to the subsequent power module connected between the positive electrode (30) and the negative electrode (40). When it does not receive a light signal, the light control switch (50) disconnects the output path of the photosensitive module (10) and opens the leakage path of the discharge module (20), so that the charge accumulated by the power module is released through the leakage path.

2. The photosensitive chip according to claim 1, characterized in that, The photosensitive module (10) is a photodiode array (11).

3. The photosensitive chip according to claim 1, characterized in that, The discharge module (20) has a PNPN type semiconductor control structure for its discharge path, and the light control switch (50) includes a first photosensitive device and a second photosensitive device. The first photosensitive device is connected between the positive electrode (30) and the first control terminal of the PNPN type semiconductor control structure; The second photosensitive device is connected between the negative electrode (40) and the second control terminal of the PNPN type semiconductor control structure; The second control terminal of the PNPN type semiconductor control structure is electrically connected to the second terminal of the photosensitive module (10); The first and second photosensitive devices are configured to: bias the two control terminals of the PNPN type semiconductor control structure into an off state when light is received; and allow the PNPN type semiconductor control structure to conduct when there is no light. The second photosensitive device is further configured to: turn on the output path of the photosensitive module (10) when light is received; and turn off the output path of the photosensitive module (10) when there is no light.

4. The photosensitive chip according to claim 3, characterized in that, The PNPN type semiconductor control structure consists of a PNP transistor Q1 and an NPN transistor Q2; The emitter of Q1 is connected to the positive electrode as one end of the leakage path; The emitter of Q2 is connected to the negative electrode as the other end of the leakage path; The base of Q1 is connected to the collector of Q2 to form the first control terminal; The collector of Q1 is connected to the base of Q2, forming the second control terminal; The first photosensitive device is a first phototransistor Q3, whose collector is connected to the positive electrode and whose emitter is connected to the first control terminal; The second photosensitive device is a second phototransistor Q4, whose collector is connected to the negative electrode and whose emitter is connected to the second control terminal.

5. The photosensitive chip according to any one of claims 1-4, characterized in that, The semiconductor substrate of the photosensitive chip is divided into a positive electrode (30), a negative electrode (40), a first photosensitive area (11) for setting the photosensitive module (10), a second photosensitive area (51) for setting the light control switch (50), and a discharge module area (21) for setting the discharge module (20).

6. The photosensitive chip according to claim 5, characterized in that, The discharge module region (21), the positive electrode (30) and the negative electrode (40) are located on the same side of the first photosensitive region (11), and the discharge module region (21) is located between the positive electrode (30) and the negative electrode (40).

7. The photosensitive chip according to claim 5, characterized in that, The second photosensitive area (51) is located in the discharge module area (21).

8. The photosensitive chip according to claim 5, characterized in that, The second photosensitive area (51) is embedded in the first photosensitive area (11).

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