Dual-quantum bit controlled gate construction method based on ensemble rare earth ions
By using two-color light pulses and the blocking effect of dipole-dipole interactions in an ensemble rare-earth ion qubit system, a high-fidelity dual quantum logic gate is constructed, solving the problem of difficulty in achieving fast and high-fidelity dual quantum logic gate manipulation in existing technologies, and realizing the high fidelity and robustness of the logic gate.
Patent Information
- Application Number
- CN202610329658.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-18
- Publication Date
- 2026-04-14
- Estimated Expiration
- 2046-03-18
AI Technical Summary
Existing technologies struggle to achieve high-fidelity dual-qubit gate manipulation in ensemble rare-earth ion qubit systems, especially in the rare-earth ion system Eu3+:Y2SiO5. The challenge lies in how to rapidly and with high fidelity create dual-qubit gates that satisfy the conditions of independent addressing, sufficiently large frequency difference, non-resonant excitation suppression, and Rabi frequency of optical pulses.
By employing optimizable dual-color light pulses to interact with the quantum system medium and utilizing the blockade effect of dipole-dipole interactions, a controlled gate is constructed by applying specific light pulse sequences, including monochromatic pulses and dual-color Rabi pulses, to the control and target bits, thus satisfying the frequency addressing and blockade effect conditions.
It achieves high-fidelity dual quantum logic gate manipulation in ensemble rare earth ion systems with a small pulse Rabi frequency, not exceeding 3 MHz, and a logic gate fidelity of not less than 99%. It is robust to frequency detuning range, reduces quantum state evolution time, avoids decoherence, and enhances fidelity.