Display panel and array substrate thereof

Abstract

The invention provides a display panel and an array substrate thereof, the array substrate comprises a substrate and a plurality of pixel units, the substrate is provided with two surfaces which are parallel and opposite to each other, the plurality of pixel units are arranged on the substrate, at least one of the plurality of pixel units comprises an active element, a reflection structure and an insulation structure, the reflection structure is provided with a reflection layer and a pixel electrode which are overlapped, the reflection structure is arranged adjacent to one of the two surfaces of the substrate, the insulation structure is arranged around the active element, the insulation structure is provided with at least one guide connection hole, and the at least one guide connection hole is communicated with the at least one guide connection hole. The active element and the pixel electrode are electrically connected with each other through the at least one guide connection hole. Therefore, the influence of the manufacturing process on the manufacturing quality of the reflecting layer can be effectively reduced.

Description

Technical Field

[0001] This invention relates to display devices, and more particularly to display panels and array substrates thereof suitable for reflective displays. Background Technology

[0002] LCD panels can be broadly classified into transmissive type LCD panels, reflective type LCD panels, and trans reflective type LCD panels. Among them, reflective LCD panels have a reflective layer that reflects incident ambient light to display images. In addition to having high reflectivity in the visible spectrum, the reflective layer's surface needs to be both flat and smooth to maintain the stability and reliability of the light reflection process.

[0003] While some related technologies have been developed in the past, such as improving the flatness and smoothness of the reflective layer, the quality of production will still be affected if the mutual interference between adjacent film layers during the manufacturing process is not taken into account, and this still needs to be improved.

[0004] In view of this, it is necessary to provide a technical solution that is different from the past in order to solve the problems existing in the conventional technology. Summary of the Invention

[0005] The purpose of this invention is to provide a display panel and its array substrate to effectively reduce the impact of the manufacturing process on the quality of the reflective film layer.

[0006] The main objective of this invention is to provide a display screen structure that can improve resolution and / or color gamut space through a specific pixel arrangement.

[0007] To achieve the above objectives, one aspect of the present invention provides an array substrate, comprising: a substrate having two parallel and opposite surfaces; and a plurality of pixel units disposed on the substrate, at least one of the plurality of pixel units including: an active element; a reflective structure having overlapping reflective layers and pixel electrodes, wherein the reflective structure is adjacent to one of the two surfaces of the substrate; and an insulating structure disposed around the active element, the insulating structure having at least one conductive hole, the active element and the pixel electrode being electrically connected to each other through the at least one conductive hole.

[0008] In some embodiments of the present invention, the pixel electrode is disposed on the side of the reflective layer facing the active element.

[0009] In some embodiments of the present invention, the active element includes a semiconductor layer, a gate, a source, and a drain, wherein the semiconductor layer is insulated from the gate, the source is electrically connected to the semiconductor layer, and the drain is electrically connected to the semiconductor layer and the pixel electrode.

[0010] In some embodiments of the present invention, the active element includes a semiconductor layer, a gate, a source, and a drain. The semiconductor layer is insulated from the gate and electrically connected to the source and the drain. The drain is electrically connected to the pixel electrode and is located on the same layer as the reflective layer.

[0011] In some embodiments of the present invention, the conductor layer comprises indium gallium zinc oxide (IGZO) or low-temperature polycrystalline silicon (LTPS).

[0012] In some embodiments of the present invention, the active element includes a metal layer and an amorphous silicon (a-Si) semiconductor that are stacked and insulated from each other. The metal layer includes a gate and a reflective layer that are insulated from each other. The gate and the amorphous silicon semiconductor overlap within the projection range of the substrate. A source and a drain are disposed on opposite sides of the amorphous silicon semiconductor. The source and the drain are electrically connected to the amorphous silicon semiconductor, and the drain is electrically connected to the pixel electrode.

[0013] In some embodiments of the present invention, the reflective layer is disposed on the side of the substrate away from the active element, the substrate has a through hole, the through hole is interconnected with the at least one conductive hole, and the active element and the pixel electrode are electrically connected to each other through the at least one conductive hole and the through hole.

[0014] In some embodiments of the present invention, the active element includes a semiconductor layer and a gate, a source and a drain are disposed on opposite sides of the semiconductor layer, the source and the drain are electrically connected to the semiconductor layer, and the gate and the semiconductor layer are within the projection range of the substrate.

[0015] In some embodiments of the present invention, a buffer layer is provided between the reflective structure and the substrate.

[0016] In some embodiments of the present invention, the buffer layer comprises at least two overlapping buffer films.

[0017] In some embodiments of the present invention, a protective layer is provided on the side of the reflective structure away from the substrate.

[0018] In some embodiments of the present invention, the protective layer includes a light-transmitting material, which includes a silicon-based compound, aluminum oxide (AlxOy), or a combination thereof, wherein the silicon-based compound includes one of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiOxNy).

[0019] In some embodiments of the present invention, the buffer layer comprises a conductive material, which includes indium tin oxide (ITO), indium zinc oxide (IZO), molybdenum (Mo), aluminum (Al), titanium (Ti), molybdenum oxide (MoOx), aluminum oxide (AlOx), titanium oxide (TiOx), molybdenum aluminum compound (MoAl), or combinations thereof.

[0020] In some embodiments of the present invention, the reflective layer comprises a metallic material, the metallic material being one of silver and aluminum.

[0021] In some embodiments of the present invention, the thickness of the reflective layer is greater than

[0022] In some embodiments of the invention, the thickness of the reflective layer ranges from 900 angstroms to 1200 angstroms.

[0023] In some embodiments of the present invention, one side of the reflective layer has a surface microstructure.

[0024] In some embodiments of the present invention, the insulating structure includes a plurality of insulating material layers stacked together, wherein the plurality of insulating material layers include inorganic materials, and the inorganic materials include silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or combinations thereof.

[0025] To achieve the above objectives, another aspect of the present invention provides a display panel comprising: an array substrate; a color filter substrate disposed opposite to the array substrate; and a display medium layer disposed between the array substrate and the color filter substrate; wherein the array substrate includes a substrate and a plurality of pixel units, the substrate having two parallel and opposite surfaces, the plurality of pixel units being disposed on the substrate, at least one of the plurality of pixel units including: an active element, a reflective structure, and an insulating structure, the reflective structure having overlapping reflective layers and pixel electrodes, the reflective structure being adjacent to one of the two surfaces of the substrate, the insulating structure being disposed around the active element, the insulating structure having at least one conductive hole, the active element and the pixel electrode being electrically connected to each other through the at least one conductive hole.

[0026] In some embodiments of the present invention, the pixel electrode is disposed on the side of the substrate facing the display medium layer, the active element is disposed on the side of the substrate away from the display medium layer, the substrate has a through hole, the through hole is interconnected with the at least one conductive hole, and the active element and the pixel electrode are electrically connected to each other through the at least one conductive hole and the through hole.

[0027] The display panel and its array substrate of the present invention include a plurality of pixel units disposed on the substrate. At least one of the plurality of pixel units includes an active element, a reflective structure, and an insulating structure. The reflective structure has an overlapping reflective layer and a pixel electrode and is disposed adjacent to one of the two surfaces of the substrate. The insulating structure is disposed around the active element and has at least one conductive hole. The active element and the pixel electrode are electrically connected to each other through the at least one conductive hole. Therefore, by disposing the reflective structure near the substrate, the reflective film is kept away from the organic film, thereby effectively reducing the impact of the manufacturing process on the quality of the reflective structure. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of the display panel associated with the present invention.

[0029] Figure 2 yes Figure 1 A schematic diagram of the sputtering process for the display panel.

[0030] Figure 3 This is a schematic diagram of the structure of the display panel associated with the present invention.

[0031] Figure 4 This is a schematic diagram of the structure of the display panel according to the first embodiment of the present invention.

[0032] Figures 5 to 7 yes Figure 4 A schematic diagram of the active components of the display panel.

[0033] Figures 8A to 8D yes Figure 4 A schematic diagram of the structure between the reflective structure of the display panel and the substrate.

[0034] Figure 9 This is a schematic diagram of the structure of the display panel associated with the present invention.

[0035] Figure 10 This is a schematic diagram of the structure of the display panel according to the second embodiment of the present invention.

[0036] Figure 11 and Figure 12 yes Figure 10 A schematic diagram of the active components of the display panel.

[0037] Figures 13A to 13D yes Figure 10 A schematic diagram of the structure between the reflective structure of the display panel and the substrate.

[0038] Figure 14 This is a schematic diagram of the structure of the display panel according to the third embodiment of the present invention.

[0039] Figure 15 This is a schematic diagram of the structure of the display panel according to the fourth embodiment of the present invention. Detailed Implementation

[0040] To make the above and other objects, features, and advantages of the present invention more apparent and understandable, preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Furthermore, the directional terms used in this invention, such as up, down, top, bottom, front, back, left, right, inside, outside, side, surrounding, center, horizontal, transverse, vertical, longitudinal, axial, radial, uppermost, or lowermost, are merely directional terms used with reference to the accompanying drawings. Therefore, the directional terms used are for illustrating and understanding the present invention, and not for limiting the present invention.

[0041] Reflective display panels use a reflective layer to reflect incident ambient light. The surface of the reflective layer needs to be both flat and smooth to maintain the stability and reliability of the light reflection process. One related technology uses an OC (overcoat) organic material layer as the flattening layer for the reflective layer, such as... Figure 1 A display panel 10 includes an array substrate 1A, a color filter substrate 1B, and a display medium layer 1C disposed therebetween. The array substrate 1A includes a substrate 11 for disposing of a plurality of pixel units. Each pixel unit includes an active element 12 (e.g., a thin-film transistor). The active element 12 is disposed on the substrate 11, and an insulating structure 13 is disposed above the active element 12, including an overlapping organic planarization layer 13a and an inorganic insulating layer 13b. A reflective layer 14 is disposed on the organic planarization layer 13a and electrically connected to the active element 12 via a via 131 for conducting electrical signals and reflecting incident light to the outside (as shown by light rays L1 and L2). In the display panel 10, compared to the inorganic insulating layer 13b, which is affected by the surface morphology of the underlying active element 12, the reflective layer 14 disposed on the organic planarization layer 13a has a higher flatness.

[0042] However, as Figure 2The image shows a film sputtering environment 20, in which the array substrate 2A includes a substrate 21, an active element 22, an inorganic insulating layer 23, and an organic planarization layer 24. When the array substrate 2A is introduced with gas 2C in the sputtering equipment 2B to make a reflective film, since the inside of the sputtering equipment 2B is a heated environment, the organic planarization layer 24 will release a small amount of unstable impurity gas 24a. The mixture of impurity gas 24a and gas 2C will have a significant impact on the coating quality of the reflective layer. For example, it will change the reflectivity and color of the reflective film, and even cause defects on the surface of the reflective film. Furthermore, it is affected by the different water absorption state of the organic planarization layer 24 (containing OC material) in the previous process, resulting in inconsistency in the state when making the reflective film and causing optical differences.

[0043] Because the substrate for manufacturing the reflective film in a reflective display panel is an organic film, and this organic film inevitably releases impurities during the sputtering process, this can cause variations in the reflective properties of the reflective film. This invention provides numerous embodiments of the display panel and its array substrate, proposing a film structure that alters the substrate of the reflective film. For example, the reflective film is positioned near the substrate, away from the organic film, preventing impurities released from the organic film from affecting the coating result of the reflective film and thus ensuring the quality of the reflective film manufactured by the vacuum sputtering equipment. This effectively reduces the impact of the manufacturing process on the quality of the reflective structure. Furthermore, if the reflective film uses the substrate as a planarization layer, this design offers superior flatness compared to organic planarization layers, allowing the product to possess optimized control over the liquid crystal cell gap and the angle of reflected light.

[0044] In this article, the display panel can be configured as either top-emitting or bottom-emitting. The display panel can be used to replace splicing outdoor billboards, achieving greater splicing efficiency than light-emitting diode (LED) panels and providing a more energy-efficient and environmentally friendly option for large billboards. Examples are given below, but are not limited to these examples.

[0045] For example, many implementations of top-emitting display panels are described below, but are not limited to these examples. For instance, the light transmission process passes through many material layers around the active element, and the reflective structure is located on the side of the substrate facing or away from the display medium.

[0046] In some embodiments, such as Figure 3 The image shows a display panel 30, including an array substrate 3A, a color filter substrate 3B, and a display medium layer 3C, with the display medium layer 3C disposed between the array substrate 3A and the color filter substrate 3B. The array substrate 3A includes a substrate 31, and the substrate 31 is provided with a plurality of pixel units (…). Figure 3(Only a single pixel unit is shown). At least one of the plurality of pixel units includes an active element 32, a reflective layer 33, an interlayer structure 34, and a transparent electrode 35. The reflective layer 33 is disposed on the surface of the substrate 31 facing the active element 32 to reflect light (as shown in L1 and L2). The interlayer structure 34 is disposed around the active element 32. For example, the interlayer structure 34 includes inorganic insulating layers 34a and 34b and an organic planarization layer 34c. The interlayer structure 34 has a conductive hole V, through which the active element 32 and the transparent electrode 35 are electrically connected to each other. In this embodiment, the transparent electrode 35 is located between the reflective layer 33 and the display medium layer 3C.

[0047] In some embodiments, such as Figure 4 The image shows a display panel 40, including an array substrate 4A, a color filter substrate 4B, and a display medium layer 4C. The array substrate 4A and the color filter substrate 4B are disposed opposite to each other, and the display medium layer 4C (e.g., including liquid crystal material or electrophoretic material) is disposed between the array substrate 4A and the color filter substrate 4B. The array substrate 4A includes a substrate 41 (e.g., a glass substrate) and a plurality of pixel units (…). Figure 4 (Only a single pixel unit is shown). The substrate 41 has two parallel and opposite surfaces. Multiple pixel units are disposed on the substrate 41. At least one of the multiple pixel units includes an active element 42, a reflective structure 43, and an insulating structure 44. The active element 42 includes, but is not limited to, a top-gate or bottom-gate thin-film transistors, which include semiconductor materials, such as amorphous silicon, low-temperature polycrystalline silicon, or metal oxides. The reflective structure 43 has an overlapping reflective layer 431 and a pixel electrode 432. The reflective layer 431 of the reflective structure 43 is adjacent to one side of the substrate 41 (i.e., the light-incident side / reflective side, such as the side of the substrate 41 facing the color filter substrate 4B). For example, the reflective layer 431 includes a reflective material such as a metal material, including silver and aluminum. For process and yield considerations, one or more other elements (such as not exceeding 10 at%) may be added to avoid affecting the original optical properties of the material. The reflective layer 431 is disposed on the side of the substrate 41 facing the active element 42. For example, the thickness of the reflective layer 431 is greater than... For example, the thickness of the reflective layer 431 ranges from 900 angstroms to 1200 angstroms, and it is used to reflect light (as shown in L1 and L2). The reflective layer 431 may also have surface microstructures, such as the surface microstructures located on the side of the reflective layer 431 facing the active element 42 (i.e., the incident light side), to help improve the light reflection effect. The pixel electrode 432 is, for example, a transparent conductive film. The pixel electrode 432 is disposed on the side of the reflective layer 431 facing the active element 42 so that the pixel electrode 432 is electrically connected to the active element 42. The insulating structure 44 is disposed around the active element 42. The insulating structure 44 has at least one conductive hole 44a, and the active element 42 and the pixel electrode 432 are electrically connected to each other through the at least one conductive hole 44a.

[0048] In this embodiment, such as Figure 4 The insulating structure 44 may include multiple insulating material layers stacked together. The multiple insulating material layers include inorganic materials, including silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or combinations thereof. For example, the insulating structure 44 includes two inorganic material layers 441 and 442. The inorganic material layer 441 (for example, as an inorganic insulating layer) is disposed on the reflective structure 43. The active element 42 is disposed on the inorganic material layer 441. The inorganic material layer 441 has a conductive hole 44a for electrically connecting the active element 42 and the pixel electrode 432. The inorganic material layer 442 (for example, as an inorganic insulating layer) covers the inorganic material layer 441 and the active element 42. The array substrate 4A may also include an organic material layer (which may be used as a planarization layer) 45, for example, made of a resin material such as acrylic. The organic material layer 45 covers the inorganic material layer 442 and can be used to set the display medium layer 4C.

[0049] In this embodiment, the reflective structure has a reflective layer and pixel electrodes, serving the functions of reflecting light and driving the display medium. Each reflective structure is independently configured for each pixel; that is, the reflective structures corresponding to different pixels are not integrated. Through the conductive holes between the reflective structures and the active components, the pixel electrodes of each reflective structure can be used to control the corresponding pixels. This contrasts with the light transmission process of the display panel, which requires the transparent electrodes (such as those between the organic planarization layer and the display medium layer) to pass through. Figure 3 (35) In this embodiment, light transmission and dispersion can be reduced and light reflection effect can be improved. The structure of the active element of the display panel in this embodiment is illustrated below with examples, but is not limited thereto.

[0050] Alternatively, in some embodiments, such as Figure 5 The diagram shows an array substrate 5A, including a substrate 51 and a plurality of pixel units ( Figure 5 (Only a single pixel unit is shown). The substrate 51 has two parallel and opposite surfaces. Multiple pixel units are disposed on the substrate 51. At least one of the multiple pixel units includes an active element 52, a reflective structure 53, and an insulating structure 54. The reflective structure 53 has an overlapping reflective layer 531 and a pixel electrode 532. The reflective structure 53 is adjacent to the substrate 51. For example, the reflective layer 531 is disposed on the substrate 51 to reflect light (e.g., ...). Figure 4 (L1 and L2), pixel electrode 532 is disposed on the side of reflective layer 531 facing active element 52; insulating structure 54 is disposed around active element 52, insulating structure 54 has at least one conductive hole 541, active element 52 and pixel electrode 532 are electrically connected to each other through at least one conductive hole 541.

[0051] In this embodiment, such as Figure 5 The active element 52 includes a semiconductor layer SC (such as low-temperature polysilicon (LTPS) or indium gallium zinc oxide (IGZO)), a gate (such as a conductive material) G, a source (such as a conductive material) S and a drain (such as a conductive material) D. The semiconductor layer SC and the gate G are stacked and insulated from each other. The source S is electrically connected to the semiconductor layer SC through a via H. The drain D is electrically connected to the semiconductor layer SC through a via H and electrically connected to the pixel electrode 532 through a conductive hole 541.

[0052] In this embodiment, such as Figure 5 The insulating structure 54 includes four inorganic material layers (e.g., as inorganic insulating layers) U51, U52, U53, and U54. Inorganic material layer U51 is disposed on pixel electrode 532, and oxide semiconductor SC is disposed on inorganic material layer U51. For example, inorganic material layer U51 partially serves as an interlayer insulating layer between pixel electrode 532 and oxide semiconductor SC. Inorganic material layer U52 covers oxide semiconductor SC and inorganic material layer U51. Gate G is disposed on inorganic material layer U52. For example, inorganic material layer U52 partially serves as an interlayer insulating layer between oxide semiconductor SC and gate G. 3. The gate G and the inorganic material layer U52 are covered. The source S and the drain D are disposed on the inorganic material layer U53. For example, the inorganic material layer U53 partially serves as an interlayer insulating layer between the gate G and the source S and drain D. The conductive material of the source S and the conductive material of the drain D extend through the inorganic material layers U53 and U52 through the via H to the oxide semiconductor SC. The conductive material of the drain D also extends through the inorganic material layers U53, U52 and U51 through the conductive via 541 to the pixel electrode 532. The inorganic material layer U54 covers the source S, the drain D and the inorganic material layer U53. For example, the inorganic material layer U54 serves as a planarization layer.

[0053] Alternatively, in some embodiments, such as Figure 6 The diagram shows an array substrate 6A, including a substrate 61 and a plurality of pixel units ( Figure 6 (Only a single pixel unit is shown). The substrate 61 has two parallel and opposite surfaces. Multiple pixel units are disposed on the substrate 61. At least one of the multiple pixel units includes an active element 62, a reflective structure 63, and an insulating structure 64. The reflective structure 63 has an overlapping reflective layer 631 and a pixel electrode 632. The reflective structure 63 is adjacent to the substrate 61. For example, the reflective layer 631 is disposed on the substrate 61 to reflect light (e.g., ...). Figure 4 (L1 and L2), pixel electrode 632 is disposed on the side of reflective layer 631 facing active element 62; insulating structure 64 is disposed around active element 62, insulating structure 64 has at least one conductive hole 641, active element 62 and pixel electrode 632 are electrically connected to each other through at least one conductive hole 641.

[0054] In this embodiment, such as Figure 6 The active element 62 includes a semiconductor layer SC (such as low-temperature polycrystalline silicon (LTPS) or indium gallium zinc oxide (IGZO)), a gate (such as a conductive material) G, a source (such as a conductive material) S, and a drain (such as a conductive material) D. The semiconductor layer SC and the gate G are stacked and insulated from each other. The semiconductor layer SC is electrically connected to the source S and the drain D via two vias H. For example, the semiconductor layer SC is electrically connected to the pixel electrode 632 via the vias H, and the pixel electrode 632 is electrically connected to the drain D. The drain D and the reflective layer 631 are located on the same layer. In this embodiment, a light-shielding element (not shown) can also be provided below the semiconductor layer SC to make the photoelectric signal more stable.

[0055] In this embodiment, such as Figure 6 The insulating structure 64 includes three inorganic material layers (e.g., as inorganic insulating layers) U61, U62, and U63. Inorganic material layer U61 covers the reflective structure 63, the drain D, and the source S. Semiconductor layer SC is disposed on inorganic material layer U61, for example, inorganic material layer U61 partially serves as an interlayer insulating layer between semiconductor layer SC and reflective structure 63, drain D, and source S. Inorganic material layer U62 covers semiconductor layer SC and inorganic material layer U61. Gate G is disposed on inorganic material layer U62, for example, inorganic material layer U62 partially serves as an interlayer insulating layer between semiconductor layer SC and gate G. Inorganic material layer U63 covers gate G and inorganic material layer U62, for example, inorganic material layer U63 serves as a planarization layer. The material of semiconductor layer SC extends through inorganic material layer U61 to source S via via H, and extends through inorganic material layer U61 to drain D and pixel electrode 632 via via H and via 641.

[0056] Alternatively, in some embodiments, such as Figure 7 The diagram shows an array substrate 7A, including a substrate 71 and a plurality of pixel units ( Figure 7 (Only a single pixel unit is shown). The substrate 71 has two parallel and opposite surfaces. Multiple pixel units are disposed on the substrate 71. At least one of the multiple pixel units includes an active element 72, a reflective structure 73, and an insulating structure 74. The reflective structure 73 has an overlapping reflective layer 731 and a pixel electrode 732. The reflective structure 73 is adjacent to the substrate 71. For example, the reflective layer 731 is disposed on the substrate 71 to reflect light (e.g., ...). Figure 4 (L1 and L2), pixel electrode 732 is disposed on the side of reflective layer 731 facing active element 72; insulating structure 74 is disposed around active element 72, insulating structure 74 has at least one conductive hole 741, active element 72 and pixel electrode 732 are electrically connected to each other through at least one conductive hole 741.

[0057] In this embodiment, such as Figure 7 The active element 72 includes a metal layer and an amorphous silicon (a-Si) semiconductor AS that are stacked and insulated from each other. The metal layer includes a gate G and a reflective layer 731 that are insulated from each other. The gate G and the amorphous silicon semiconductor AS overlap within the projection range of the substrate 71. For example, the gate G is located between the substrate 71 and the amorphous silicon semiconductor AS. A source S and a drain D are disposed on opposite sides of the amorphous silicon semiconductor AS. The source S and the drain D are electrically connected to the amorphous silicon semiconductor AS, respectively. The drain D is electrically connected to the pixel electrode 732 through a via 741.

[0058] In this embodiment, such as Figure 7 The insulating structure 74 includes two inorganic material layers (e.g., as inorganic insulating layers) U71 and U72. Inorganic material layer U71 covers the substrate 71, the reflective structure 73, and the gate G. An amorphous silicon semiconductor AS is disposed on the inorganic material layer U71. For example, the inorganic material layer U71 partially serves as an interlayer insulating layer between the amorphous silicon semiconductor AS, the reflective structure 73, and the gate G. Inorganic material layer U72 covers the amorphous silicon semiconductor AS, the source S, and the drain D. For example, the inorganic material layer U72 serves as a planarization layer. The conductive material of the drain D extends through the inorganic material layer U71 via the conductive hole 741 to the pixel electrode 732.

[0059] In some embodiments, such as when the reflective structure is located between the active element and the substrate, the configuration between the reflective structure and the substrate can be finely adjusted. For example, such as Figure 8A The substrate 81 may be provided with a reflective structure 83; additionally, such as Figure 8B A buffer layer 8a may be disposed between the substrate 81 and the reflective structure 83. The buffer layer 8a may be made of a light-transmitting or light-opaque material. For example, the buffer layer 8a may include a conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), molybdenum (Mo), aluminum (Al), titanium (Ti), molybdenum oxide (MoOx), aluminum oxide (AlOx), titanium oxide (TiOx), molybdenum aluminum compound (MoAl), or combinations thereof. Figure 8C A buffer layer 8a is disposed between the substrate 81 and the reflective structure 83. A protective layer 8b is disposed on the side of the reflective structure 83 away from the substrate 81. The protective layer 8b can be made of a highly transparent material and can be a conductor or a non-conductor, such as a silicon-based compound, aluminum oxide (AlxOy), or a combination thereof. The silicon-based compound includes one of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiOxNy). Additionally, such as... Figure 8D A buffer layer 8a' is provided between the substrate 81 and the reflective structure 83. A protective layer 8b is provided on the side of the reflective structure 83 away from the substrate 81. The buffer layer 8a' includes at least two overlapping buffer films (such as 8a1 and 8a2). The buffer films can be made of the material of the buffer layer, which will not be described in detail.

[0060] For example, in addition to the configuration where the reflective structure is located between the active element and the substrate, the top-emitting display panel can also be configured with the substrate located between the active element and the reflective structure. Examples are given below, but this is not a limitation.

[0061] In some embodiments, such as Figure 9 The display panel 90 includes an array substrate 9A, a color filter substrate 9B, and a display medium layer 9C, wherein the display medium layer 9C is disposed between the array substrate 9A and the color filter substrate 9B. The array substrate 9A includes a substrate 91, and the substrate 91 is provided with a plurality of pixel units ( Figure 9 (Only a single pixel unit is shown). At least one of the plurality of pixel units includes an active element 92, a reflective layer 93, an interlayer structure 94, and a transparent electrode 95. The reflective layer 93 is disposed on the surface of the substrate 91 away from the active element 92 to reflect light (as shown in L1 and L2). The interlayer structure 94 is disposed around the active element 92. For example, the interlayer structure 94 includes an inorganic insulating layer 94a and an organic planarization layer 94b. The interlayer structure 94 has a conductive hole V, through which the active element 92 and the transparent electrode 95 are electrically connected to each other. In this embodiment, the transparent electrode 95 is located between the reflective layer 93 and the display medium layer 9C. The processes of light incident and reflection (as shown in L1 and L2) both pass through the transparent electrode 95, causing the light transmission effect to be affected by the light transmittance of the transparent electrode 95.

[0062] In some embodiments, such as Figure 10 The image shows a display panel 100, including an array substrate 10A, a color filter substrate 10B, and a display medium layer 10C. The array substrate 10A and the color filter substrate 10B are disposed opposite to each other, and the display medium layer 10C (e.g., including liquid crystal material or electrophoretic material) is disposed between the array substrate 10A and the color filter substrate 10B. The array substrate 10A includes a substrate 101 (e.g., a glass substrate) and a plurality of pixel units (…). Figure 10(Only a single pixel unit is shown). The substrate 101 has two parallel and opposite surfaces. Multiple pixel units are disposed on the substrate 101. At least one of the multiple pixel units includes an active element 102, a reflective structure 103, and an insulating structure 104. The reflective structure 103 is disposed on the side of the substrate 101 away from the active element 102 (i.e., the light-incident side / reflective side). For example, the reflective structure 103 has an overlapping pixel electrode 1031 and a reflective layer 1032. The pixel of the reflective structure 103... Electrode 1031 is disposed adjacent to substrate 101, which has a through hole 1011 to allow pixel electrode 1031 to electrically connect to active element 102. Reflective layer 1032 comprises a metallic material, including but not limited to silver or aluminum. However, for process and yield considerations, it may also be doped with one or more other elements (e.g., not exceeding 10 at%) to avoid affecting the original optical properties of the material. Reflective layer 1032 is disposed on the side of substrate 101 away from active element 102, for example, the thickness of reflective layer 1032 is greater than... The thickness of reflective layer 1032 ranges from 900 angstroms to 1200 angstroms, used to reflect light (as shown in L1 and L2). Reflective layer 1032 may also have surface microstructures located on the side of reflective layer 1032 facing the active element 1021 (i.e., the light incident side) to help improve the light reflection effect. Insulating structure 104 is disposed around active element 102. Insulating structure 104 may have at least one via (not shown in the figure), for example, at least one via is interconnected with through hole 1011 of substrate 101. Active element 102 and pixel electrode 1031 are electrically connected to each other through at least one via and through hole 1011.

[0063] In this embodiment, such as Figure 10 The insulating structure 104 may include at least one insulating material layer, which includes an inorganic material, including silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or a combination thereof. For example, the active element 102 is disposed on the substrate 101, and the insulating structure 104 includes an inorganic material layer (for example, as an insulating layer) covering the active element 102 and the substrate 101. The array substrate 10A may also include an organic material layer (for example, as a planarization layer) 105, for example, made of a resin material such as acrylic. The organic material layer 105 covers the insulating structure 104 and can be used to dispose of the display medium layer 10C.

[0064] In this embodiment, the reflective structure has a reflective layer and pixel electrodes, serving the functions of reflecting light and driving the display medium. Each reflective structure is independently configured for each pixel; that is, the reflective structures corresponding to different pixels are not integrated. Through the conductive holes between the reflective structures and active components, and the through holes in the substrate, the pixel electrodes of each reflective structure can be used to control the corresponding pixel. This contrasts with the light transmission process of the display panel, which requires the transparent electrodes (such as those between the organic planarization layer and the display medium layer) to pass through. Figure 9 (95) In this embodiment, light transmission and scattering can be reduced, and the light reflection effect can be improved; furthermore, in this embodiment, the light reflection interface is located between the substrate and the reflective layer, and has excellent and stable reflectivity. The structure of the active element of the display panel in this embodiment is illustrated below with examples, but is not limited thereto.

[0065] Alternatively, in some embodiments, such as Figure 11 The diagram shows an array substrate 11A, including a substrate 111 and a plurality of pixel units. Figure 11 (Only a single pixel unit is shown). The substrate 111 has two parallel and opposite surfaces. Multiple pixel units are disposed on the substrate 111. At least one of the multiple pixel units includes an active element 112, a reflective structure 113, and an insulating structure 114. The reflective structure 113 has an overlapping pixel electrode 1131 (e.g., a transparent electrode) and a reflective layer 1132. The reflective structure 113 is adjacent to the substrate 111. For example, the pixel electrode 1131 is disposed between the substrate 111 and the reflective layer 1132. The pixel electrode 1131 is located on the side of the reflective layer 1132 facing the active element 112. The reflective layer 1132 is used to reflect light (e.g., light from a single pixel unit). Figure 10 L1 and L2); an insulating structure 114 is disposed around the active element 112. The insulating structure 114 has a conductive hole 1141, which is connected to the through hole 1111 of the substrate 111. The active element 112 and the pixel electrode 1131 are electrically connected to each other through the conductive hole 1141 and the through hole 1111.

[0066] In this embodiment, such as Figure 11 The active element 112 includes a semiconductor layer SC (such as low-temperature polycrystalline silicon (LTPS) or indium gallium zinc oxide (IGZO)), a gate (such as a conductive material) G, a source (such as a conductive material) S, and a drain (such as a conductive material) D. The source S is electrically connected to the semiconductor layer SC through a via H, and the drain D is electrically connected to the semiconductor layer SC through a via H and electrically connected to the pixel electrode 1131 through a via 1141 and a through-hole 1111. For example, the source S and the drain D are respectively electrically connected to the semiconductor layer SC, and the drain D and the pixel electrode 1131 are electrically connected to each other through the via 1141 and the through-hole 1111. The gate G and the semiconductor layer SC are within the projection range of the substrate 111.

[0067] In this embodiment, such as Figure 11 The insulating structure 114 includes four inorganic material layers (e.g., as inorganic insulating layers) U111, U112, U113, and U114. Inorganic material layer U111 is disposed on substrate 111, and oxide semiconductor SC is disposed on inorganic material layer U111. For example, inorganic material layer U111 partially serves as an interlayer insulating layer between substrate 111 and oxide semiconductor SC. Inorganic material layer U112 covers oxide semiconductor SC and inorganic material layer U111. Gate G is disposed on inorganic material layer U112, for example, inorganic material layer U112 partially serves as an interlayer insulating layer between oxide semiconductor SC and gate G. Inorganic material layer U113 covers gate G and inorganic material layer U114. Layer U112, with source S and drain D disposed on inorganic material layer U113, for example, inorganic material layer U113 partially serves as an interlayer insulating layer between gate G and source S and drain D; conductive material of source S and conductive material of drain D extend through inorganic material layers U113 and U112 to oxide semiconductor SC via via H, respectively; conductive material of drain D also extends through inorganic material layers U113, U112, and U111 via via 1141 and through substrate 111 to pixel electrode 1131; inorganic material layer U114 covers source S, drain D and inorganic material layer U113, for example, inorganic material layer U114 serves as a planarization layer.

[0068] Alternatively, in some embodiments, such as Figure 12 The diagram shows an array substrate 12A, including a substrate 121 and a plurality of pixel units. Figure 12 (Only a single pixel unit is shown). The substrate 121 has two parallel and opposite surfaces. The substrate 121 has a through hole 1211. Multiple pixel units are disposed on the substrate 121. At least one of the multiple pixel units includes an active element 122, a reflective structure 123, and an insulating structure 124. The reflective structure 123 has an overlapping pixel electrode 1231 and a reflective layer 1232. The pixel electrode 1231 of the reflective structure 123 is adjacent to the substrate 121. For example, the pixel electrode 1231 is disposed between the substrate 121 and the reflective layer 1232. The pixel electrode 1231 is located on the side of the reflective layer 1232 facing the active element 122. The reflective layer 1232 is used to reflect light (e.g., Figure 10 L1 and L2); an insulating structure 124 is disposed around the active element 122, and the insulating structure 124 has a conductive hole 1241, through which the active element 122 and the pixel electrode 1231 are electrically connected to each other via the conductive hole 1241 and the through hole 1211.

[0069] In this embodiment, such as Figure 12The active element 122 includes a semiconductor layer (such as a-Si or IGZO) SC and a gate G. A source S and a drain D are disposed on opposite sides of the semiconductor layer SC. The source S and drain D are electrically connected to the semiconductor layer SC. The drain D and the pixel electrode 1231 are electrically connected to each other through a via 1241 and a through-hole 1211. The gate G and the semiconductor layer SC are within the projection range of the substrate 121, and the semiconductor layer SC is located between the substrate 121 and the gate G. In this embodiment, a light-shielding element (not shown) can also be disposed below the semiconductor layer SC to make the photoelectric signal more stable.

[0070] In this embodiment, such as Figure 12 The insulating structure 124 includes three inorganic material layers (e.g., as inorganic insulating layers) U121, U122, and U123. Inorganic material layer U121 is disposed on substrate 121. Semiconductor layer SC, source electrode S, and drain electrode D are disposed on inorganic material layer U121. For example, inorganic material layer U121 partially serves as an interlayer insulating layer between substrate 121 and semiconductor layer SC, source electrode S, and drain electrode D. The conductive material of drain electrode D passes through inorganic material layer U121 via via 1241 and through substrate 121 to extend to pixel electrode 1231. Inorganic material layer U122 covers semiconductor layer SC, source electrode S, and drain electrode D. Gate electrode G is disposed on inorganic material layer U122. For example, inorganic material layer U122 partially serves as an interlayer insulating layer between gate electrode G and semiconductor layer SC, source electrode S, and drain electrode D. Inorganic material layer U123 covers gate electrode G. For example, inorganic material layer U123 serves as a planarization layer.

[0071] In some embodiments, such as when the substrate is located between the active element and the reflective structure, the configuration between the reflective structure and the substrate can be finely adjusted, for example, as... Figure 13A The substrate 131 may be provided with a reflective structure 133; additionally, such as Figure 13B A buffer layer 13a may be disposed between the substrate 131 and the reflective structure 133. The buffer layer 13a may be made of a light-transmitting or light-opaque material. For example, the buffer layer 13a may include a conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), molybdenum (Mo), aluminum (Al), titanium (Ti), molybdenum oxide (MoOx), aluminum oxide (AlOx), titanium oxide (TiOx), molybdenum aluminum compound (MoAl), or combinations thereof. Figure 13C A buffer layer 13a is disposed between the substrate 131 and the reflective structure 133. A protective layer 13b is disposed on the side of the reflective structure 133 away from the substrate 131. The protective layer 13b can be made of a highly transparent material and can be a conductor or a non-conductor, such as a silicon-based compound, aluminum oxide (AlxOy), or a combination thereof. The silicon-based compound includes one of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiOxNy). Additionally, such as... Figure 13DA buffer layer 13a' is provided between the substrate 131 and the reflective structure 133. A protective layer 13b is provided on the side of the reflective structure 133 away from the substrate 131. The buffer layer 13a' includes at least two overlapping buffer films (such as 13a1 and 13a2). The buffer films can be made of the above-mentioned buffer layer material, which will not be described in detail.

[0072] For example, many implementations of bottom-emitting display panels, such as light transmission processes that do not pass through multiple material layers surrounding the active element, and reflective structures located on the side of the substrate facing or away from the display medium, are illustrated below.

[0073] In some embodiments, such as Figure 14 The image shows a display panel 140, including a color filter substrate 14A, an array substrate 14B, and a display medium layer 14C. The color filter substrate 14A and the array substrate 14B are disposed opposite to each other, and the display medium layer 14C (e.g., including liquid crystal material or electrophoretic material) is disposed between the color filter substrate 14A and the array substrate 14B. The array substrate 14B includes a substrate 141 (e.g., a glass substrate) and a plurality of pixel units (…). Figure 14 (Only a single pixel unit is drawn). The substrate 141 has two surfaces that are parallel to each other. Multiple pixel units are disposed on the substrate 141. At least one of the multiple pixel units includes an active element 142, a reflective structure 143 and an insulating structure 144. The active element 142 includes, but is not limited to, a top-gate or bottom-gate thin-film transistor, which comprises semiconductor materials such as amorphous silicon, low-temperature polycrystalline silicon, or metal oxides. The reflective structure 143 has an overlapping reflective layer 1431 and a pixel electrode 1432. The reflective layer 1431 of the reflective structure 143 is adjacent to one side of the substrate 141 (i.e., the reflective side, such as the side of the substrate 141 away from the color filter substrate 14A). For example, the reflective layer 1431 includes reflective materials such as metal materials, including silver and aluminum. For process and yield considerations, one or more other elements (such as not exceeding 10 at%) may be doped to avoid affecting the original optical properties of the material. The reflective layer 1431 is disposed on the side of the substrate 141 facing the active element 142. For example, the thickness of the reflective layer 1431 is greater than... For example, the thickness of the reflective layer 1431 ranges from 900 angstroms to 1200 angstroms, and it is used to reflect light (as shown in L1 and L2). The reflective layer 1431 may also have surface microstructures located on the side of the reflective layer 1431 facing the substrate 141 (i.e., the light incident side) to help improve the light reflection effect. The pixel electrode 1432 is, for example, a transparent conductive film. The pixel electrode 1432 is disposed on the side of the reflective layer 1431 facing the active element 142 so that the pixel electrode 1432 is electrically connected to the active element 142. The insulating structure 144 is disposed around the active element 142 and has at least one conductive hole 1441. The active element 142 and the pixel electrode 1432 are electrically connected to each other through the at least one conductive hole 1441.

[0074] In this embodiment, such as Figure 14 The insulating structure 144 may include multiple insulating material layers stacked together. The multiple insulating material layers include inorganic materials, including silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or combinations thereof. For example, the insulating structure 144 includes two inorganic material layers U141 and U142. The inorganic material layer (e.g., as an insulating layer) U141 is disposed on the reflective structure 143. The active element 142 is disposed on the inorganic material layer U141. The inorganic material layer U141 has a conductive hole 1441 for electrically connecting the active element 142 and the pixel electrode 1432. The inorganic material layer (e.g., as an insulating layer) U142 covers the inorganic material layer U141 and the active element 142.

[0075] In this embodiment, the reflective structure has a reflective layer and pixel electrodes, serving the functions of reflecting light and driving the display medium. Each reflective structure is independently set for each pixel, meaning that the reflective structures corresponding to different pixels are not integrated. Through the connecting holes between the reflective structure and the active element, as well as the through holes in the substrate, the pixel electrodes of each reflective structure can be used to control the corresponding pixel. Furthermore, the light reflection interface is located between the substrate and the reflective layer, providing excellent and stable reflectivity. Also, the active element is located on the side of the substrate away from the display medium, eliminating the need for an organic planarization layer. This avoids the sputtering process affecting the quality of the reflective layer, and the substrate has a better and more stable planarization effect, making it easier to control the gap between liquid crystal cells. The polarization effect of light can be stably controlled, increasing the process flexibility. Additionally, because the active element is on the other side of the light reflection path, the light is blocked by the reflective layer, avoiding light leakage caused by the semiconductor photoelectric effect of the active element. This allows for a lower screen refresh rate and achieves greater power saving.

[0076] In some embodiments, such as Figure 15The image shows a display panel 150, including a color filter substrate 15A, an array substrate 15B, and a display medium layer 15C. The color filter substrate 15A and the array substrate 15B are disposed opposite to each other, and the display medium layer 15C (e.g., including liquid crystal material or electrophoretic material) is disposed between the color filter substrate 15A and the array substrate 15B. The array substrate 15B includes a substrate 151 (e.g., a glass substrate) and a plurality of pixel units (…). Figure 15 (Only a single pixel unit is shown). The substrate 151 has two parallel and opposite surfaces. Multiple pixel units are disposed on the substrate 151. At least one of the multiple pixel units includes an active element 152, a reflective structure 153, and an insulating structure 154. The reflective structure 153 is disposed on the side of the substrate 151 away from the active element 152 (i.e., the light-incident side / reflective side). For example, the reflective structure 153 has an overlapping pixel electrode 1531 and a reflective layer 1532. The pixel of the reflective structure 153... Electrode 1531 is disposed adjacent to substrate 151, which has a through hole 1511 to allow pixel electrode 1531 to electrically connect to active element 152. Reflective layer 1532 comprises a metallic material, including silver and aluminum. However, for process and yield considerations, it may be doped with one or more other elements (e.g., not exceeding 10 at%) to avoid affecting the original material's optical properties. Reflective layer 1532 is disposed on the side of substrate 151 away from active element 152; for example, the thickness of reflective layer 1532 is greater than... The thickness of reflective layer 1532 ranges from 900 angstroms to 1200 angstroms, used to reflect light (as shown in L1 and L2). Reflective layer 1532 may also have surface microstructures located on the side of reflective layer 1532 away from substrate 151 (i.e., the light incident side), to help improve the light reflection effect. Insulating structure 154 is disposed around active element 152. Insulating structure 154 may have at least one via (not shown in the figure), for example, at least one via is interconnected with through hole 1511 of substrate 151. Active element 152 and pixel electrode 1531 are electrically connected to each other through at least one via and through hole 1511.

[0077] In this embodiment, such as Figure 15 The insulating structure 154 may include at least one insulating material layer, which includes an inorganic material, including silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or a combination thereof. For example, the active element 152 is disposed on the substrate 151, and the inorganic material layer (e.g., as an inorganic insulating layer) included in the insulating structure 154 covers the active element 152 and the substrate 151.

[0078] In this embodiment, the reflective structure has a reflective layer and pixel electrodes, serving the functions of reflecting light and driving the display medium. Each reflective structure is independently set for each pixel, meaning that the reflective structures corresponding to different pixels are not integrated. Through the connecting holes between the reflective structure and the active element, the pixel electrodes of each reflective structure can be used to control the corresponding pixel. Furthermore, the pixel electrodes are closer to the display medium, resulting in better electric field control. Also, the light does not need to be reflected again through the substrate, resulting in higher reflectivity. Additionally, the active element is located on the side of the substrate away from the display medium, eliminating the need for an organic planarization layer. This avoids the impact of sputtering on the quality of the reflective layer, and the substrate has a better and more stable planarization effect, making it easier to control the gap between liquid crystal cells. The polarization effect of light can be stably controlled, increasing the process flexibility. Furthermore, because the active element is on the other side of the light reflection path, the light is blocked by the reflective layer, avoiding light leakage caused by the semiconductor photoelectric effect of the active element. This allows for a lower screen refresh rate and achieves greater power saving.

[0079] The display panel and its array substrate of the present invention described above have a plurality of pixel units disposed on a substrate. At least one of the plurality of pixel units includes an active element, a reflective structure and an insulating structure. The reflective structure has an overlapping reflective layer and a pixel electrode and is disposed adjacent to one of the two surfaces of the substrate. The insulating structure is disposed around the active element and has at least one conductive hole. The active element and the pixel electrode are electrically connected to each other through the at least one conductive hole.

[0080] Therefore, in the above embodiments of the present invention, the reflective structure is disposed near the substrate, so that the reflective film is far away from the organic film. This avoids the influence of the organic layer on the process when fabricating the reflective layer, and enables a better and more stable vacuum environment for fabricating the reflective layer, thereby improving the quality of the reflective layer prepared by the vacuum sputtering equipment.

[0081] Furthermore, the substrate of the reflective layer in the above embodiments of the present invention is based on a substrate, resulting in superior flatness; if the light reflection interface is located at the contact interface between the substrate and the reflective layer, it also possesses a smoother interface with greater stability and lower roughness. Therefore, the reflective layer is highly suitable for direct fabrication on the substrate, thus solving the problem of conventional reflective liquid crystal screens having their optical characteristics affected by organic layers and circuit structures.

[0082] While the invention has been described in conjunction with specific embodiments thereof, it should be understood that many alternatives, modifications, and variations will be apparent to those skilled in the art. Therefore, it is intended to encompass all alternatives, modifications, and variations falling within the scope of the appended claims.

Claims

1. An array substrate, characterized in that, Include: The substrate has two surfaces that are parallel to each other; and A plurality of pixel units are disposed on the substrate, and at least one of the plurality of pixel units includes: Active components; A reflective structure having overlapping reflective layers and pixel electrodes, wherein the reflective structure is adjacent to one of the two surfaces of the substrate; and An insulating structure is disposed around the active element, the insulating structure having at least one conductive hole, through which the active element and the pixel electrode are electrically connected to each other.

2. The array substrate as described in claim 1, characterized in that, The pixel electrode is disposed on the side of the reflective layer facing the active element.

3. The array substrate as described in claim 1, characterized in that, The active element includes a semiconductor layer, a gate, a source, and a drain, wherein the semiconductor layer and the gate are overlapped and insulated from each other, the source is electrically connected to the semiconductor layer, and the drain is electrically connected to the semiconductor layer and the pixel electrode.

4. The array substrate as described in claim 1, characterized in that, The active element includes a semiconductor layer, a gate, a source, and a drain. The semiconductor layer and the gate are overlapped and insulated from each other. The semiconductor layer is electrically connected to the source and the drain. The drain is electrically connected to the pixel electrode. The drain and the reflective layer are located on the same layer.

5. The array substrate as described in claim 3 or 4, characterized in that, The semiconductor layer comprises indium gallium zinc oxide (IGZO) or low-temperature polycrystalline silicon (LTPS).

6. The array substrate as claimed in claim 1, characterized in that, The active element includes a metal layer and an amorphous silicon (a-Si) semiconductor that are stacked and insulated from each other. The metal layer includes a gate and a reflective layer that are insulated from each other. The gate and the amorphous silicon semiconductor overlap within the projection range of the substrate. A source and a drain are disposed on opposite sides of the amorphous silicon semiconductor. The source and the drain are electrically connected to the amorphous silicon semiconductor, and the drain is electrically connected to the pixel electrode.

7. The array substrate as claimed in claim 1, characterized in that, The reflective layer is disposed on the side of the substrate away from the active element. The substrate has a through hole, which is interconnected with the at least one conductive hole. The active element and the pixel electrode are electrically connected to each other through the at least one conductive hole and the through hole.

8. The array substrate as described in claim 7, characterized in that, The active element includes a semiconductor layer and a gate. A source and a drain are disposed on opposite sides of the semiconductor layer. The source and the drain are electrically connected to the semiconductor layer. The gate and the semiconductor layer are within the projection range of the substrate.

9. The array substrate as claimed in claim 1, characterized in that, A buffer layer is provided between the reflective structure and the substrate.

10. The array substrate as claimed in claim 9, characterized in that, The buffer layer comprises at least two overlapping buffer films.

11. The array substrate as claimed in claim 9, characterized in that, A protective layer is provided on the side of the reflective structure away from the substrate.

12. The array substrate as claimed in claim 11, characterized in that, The protective layer includes a light-transmitting material, which includes a silicon-based compound, aluminum oxide (AlxOy), or a combination thereof, wherein the silicon-based compound includes one of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiOxNy).

13. The array substrate as claimed in claim 9, characterized in that, The buffer layer comprises a conductive material, including indium tin oxide (ITO), indium zinc oxide (IZO), molybdenum (Mo), aluminum (Al), titanium (Ti), molybdenum oxide (MoOx), aluminum oxide (AlOx), titanium oxide (TiOx), molybdenum aluminum compound (MoAl), or combinations thereof.

14. The array substrate as claimed in claim 1, characterized in that, The reflective layer comprises a metallic material, which includes one of silver and aluminum.

15. The array substrate as claimed in claim 1, characterized in that, The thickness of the reflective layer is greater than 900 angstroms.

16. The array substrate as claimed in claim 15, characterized in that, The thickness of the reflective layer ranges from 900 angstroms to 1200 angstroms.

17. The array substrate as claimed in claim 1, characterized in that, One side of the reflective layer has a surface microstructure.

18. The array substrate as claimed in claim 1, characterized in that, The insulating structure includes multiple layers of insulating material stacked together, wherein the multiple insulating material layers include inorganic materials, and the inorganic materials include silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or combinations thereof.

19. A display panel, characterized in that, Include: Array substrate; A color filter substrate is disposed opposite to the array substrate; and A display medium layer is disposed between the array substrate and the color filter substrate; The array substrate includes a substrate and a plurality of pixel units. The substrate has two parallel and opposite surfaces. The plurality of pixel units are disposed on the substrate. At least one of the plurality of pixel units includes an active element, a reflective structure, and an insulating structure. The reflective structure has an overlapping reflective layer and a pixel electrode. The reflective structure is adjacent to one of the two surfaces of the substrate. The insulating structure is disposed around the active element and has at least one conductive hole. The active element and the pixel electrode are electrically connected to each other through the at least one conductive hole.

20. The display panel as claimed in claim 19, characterized in that, The pixel electrode is disposed on the side of the substrate facing the display medium layer, and the active element is disposed on the side of the substrate away from the display medium layer. The substrate has a through hole, which is interconnected with the at least one conductive hole. The active element and the pixel electrode are electrically connected to each other through the at least one conductive hole and the through hole.

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