In-chip two-dimensional code physical storage structure and preparation method and reading method thereof

Abstract

The application provides a chip-in two-dimensional code physical storage structure and a preparation method and a reading method thereof, and relates to the technical field of semiconductors.The storage structure comprises a lower electrode layer, a dielectric layer formed on the lower electrode layer, and an upper electrode pattern layer formed on the dielectric layer, wherein the upper electrode pattern layer is composed of a plurality of mutually isolated upper electrode units arranged in a matrix; the upper electrode units comprise complete upper electrode units and modified upper electrode units; the modified upper electrode units have material missing areas; and the capacitance value of the complete upper electrode units relative to the lower electrode layer is greater than the capacitance value of the modified upper electrode units relative to the lower electrode layer. The storage structure provided by the application can permanently store two-dimensional code information in the form of hardware inside a chip, and the information is invisible and cannot be electrically tampered with; the information can only be reliably read by detecting internal capacitance differences, and the anti-counterfeiting performance is strong.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to an in-chip QR code physical storage structure, a method for preparing an in-chip QR code physical storage structure, a method for reading an in-chip QR code physical storage structure, a chip, and a circuit. Background Technology

[0002] In the fields of IoT and digital asset management, common information storage methods mainly include two categories: QR codes and flash memory chips. QR codes carry information as a visible graphical matrix on the surface of an object. They possess the physical characteristic that once written, it cannot be altered, enabling data fixation and tamper-proofing. However, their information is completely exposed, making them easily captured and copied by optical devices, posing security risks. Flash memory chips, on the other hand, convert information into electrical charges and store it internally. This provides concealment, and read access can be managed through encryption, resulting in relatively high security. However, their charge-based storage mechanism allows for repeated erasing and rewriting of data via electrical means. Even with encryption protection, it is difficult to completely eliminate the possibility of malicious tampering or key cracking, failing to meet the high security requirement of permanent tamper-proofing.

[0003] In high-security anti-counterfeiting applications, QR codes are often combined with flash memory chips to balance ease of identification and data security. However, while the surface information is easily readable, the internal information can be easily rewritten. Summary of the Invention

[0004] To address the technical problem in existing technologies where surface information is easily exposed and readable, while internal information can be arbitrarily rewritten, this invention provides an in-chip QR code physical storage structure, a method for preparing the in-chip QR code physical storage structure, a method for reading the in-chip QR code physical storage structure, a chip, and a circuit. Using this in-chip QR code physical storage structure, QR code information can be permanently stored in hardware form inside the chip, making it invisible and electrically tamper-proof. It can only be reliably read by detecting differences in internal capacitance, providing strong anti-counterfeiting capabilities.

[0005] To achieve the above objectives, a first aspect of the present invention provides an in-chip QR code physical storage structure, comprising: a lower electrode layer; a dielectric layer formed on the lower electrode layer; and an upper electrode pattern layer formed on the dielectric layer, wherein the upper electrode pattern layer is composed of a plurality of mutually isolated upper electrode units arranged in a matrix; wherein the upper electrode unit includes a complete upper electrode unit and a modified upper electrode unit, the modified upper electrode unit having a material missing region, and the capacitance value of the complete upper electrode unit relative to the lower electrode layer is greater than the capacitance value of the modified upper electrode unit relative to the lower electrode layer.

[0006] Furthermore, the pattern formed by arranging the complete upper electrode unit and the modified upper electrode unit is a physical graphic of a QR code.

[0007] Furthermore, the complete upper electrode unit corresponds to a first logic value encoded by a QR code, and the modified upper electrode unit corresponds to a second logic value encoded by a QR code; wherein the first logic value and the second logic value are different.

[0008] Furthermore, the material-deficient area occupies the entire upper electrode unit.

[0009] Furthermore, the missing area of ​​the material is a through hole.

[0010] Furthermore, the cross-sectional shape of the through hole is one of a circle, a square, or a rectangle.

[0011] Furthermore, the through hole is located in the central region or corner region of the modified upper electrode unit.

[0012] Furthermore, the dielectric layer is made of silicon dioxide, and the lower electrode layer and the upper electrode pattern layer are made of copper.

[0013] A second aspect of the present invention provides a method for fabricating an in-chip QR code physical storage structure. The method includes: forming a lower electrode layer; forming a dielectric layer on the lower electrode layer; and forming an upper electrode pattern layer on the dielectric layer. The upper electrode pattern layer is composed of a plurality of mutually isolated upper electrode units arranged in a matrix. Each upper electrode unit includes a complete upper electrode unit and a modified upper electrode unit. The modified upper electrode unit has a material-deficient region. The capacitance value of the complete upper electrode unit relative to the lower electrode layer is greater than the capacitance value of the modified upper electrode unit relative to the lower electrode layer.

[0014] Further, forming an upper electrode pattern layer on the dielectric layer includes: forming a plurality of mutually isolated initial upper electrode units arranged in a matrix on the dielectric layer; selecting a modified upper electrode unit to be manufactured from the initial upper electrode units; performing a material removal process on the modified upper electrode unit to be manufactured to form a modified upper electrode unit with a material missing region, wherein the unselected initial upper electrode units are used as complete upper electrode units, and the upper electrode pattern layer is formed by the complete upper electrode units and the modified upper electrode units.

[0015] Furthermore, laser filament technology is used to remove material from the modified upper electrode unit to be fabricated.

[0016] A third aspect of the present invention provides a method for reading an in-chip QR code physical storage structure, applied to the in-chip QR code physical storage structure described above. The method includes: measuring the capacitance value of each upper electrode unit relative to the lower electrode layer within the in-chip QR code physical storage structure; determining the capacitance state of the corresponding upper electrode unit based on the capacitance value; wherein the capacitance state includes a high capacitance state and a low capacitance state; and decoding according to QR code encoding rules based on the arrangement order of the upper electrode units in the matrix and the capacitance state of each upper electrode unit to obtain the stored QR code information.

[0017] A fourth aspect of the present invention provides a chip that includes the in-chip QR code physical storage structure described above.

[0018] A fifth aspect of the present invention provides a circuit comprising the in-chip QR code physical storage structure described above.

[0019] The present invention has at least the following technical effects through the technical solution provided by the present invention: The in-chip QR code physical storage structure of this invention includes: a lower electrode layer; a dielectric layer formed on the lower electrode layer; and an upper electrode pattern layer formed on the dielectric layer, wherein the upper electrode pattern layer is composed of multiple isolated upper electrode units arranged in a matrix. This matrix arrangement directly corresponds to the physical pattern of the QR code. The upper electrode unit includes complete upper electrode units and modified upper electrode units. The modified upper electrode units have material missing areas, making the capacitance value of the complete upper electrode unit relative to the lower electrode layer greater than that of the modified upper electrode unit relative to the lower electrode layer. This capacitance difference, directly determined by the physical form, allows information to be permanently stored in hardware form, preventing electrical erasure or tampering. Since the entire structure is completely embedded within the chip, the QR code pattern is invisible from the outside, thus achieving concealed information storage and strong anti-counterfeiting capabilities. Information reading is performed by detecting the internal capacitance difference through non-optical methods, unaffected by chip surface packaging, contamination, or scratches, resulting in high reliability and strong environmental adaptability. Therefore, the in-chip QR code physical storage structure provided by this invention can permanently store QR code information in hardware form inside the chip, making it invisible and tamper-proof. It can only be reliably read by detecting differences in internal capacitance, thus providing strong anti-counterfeiting capabilities.

[0020] Other features and advantages of the present invention will be described in detail in the following detailed description section. Attached Figure Description

[0021] The accompanying drawings are provided to further illustrate embodiments of the present invention and form part of the specification. They are used together with the following detailed description to explain the embodiments of the present invention, but do not constitute a limitation thereof. In the drawings: Figure 1This is a schematic diagram of the in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 2 A flowchart illustrating the method for fabricating an in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the substrate formed in the method for fabricating the in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the lower electrode filling groove formed in the method for fabricating the in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 5 This is a schematic diagram of the electrode material deposited in the method for fabricating an in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 6 This is a schematic diagram of the lower electrode layer formed in the method for fabricating the in-chip QR code physical storage structure provided in this embodiment of the invention; Figure 7 This is a schematic diagram of removing photoresist after forming the lower electrode layer in the method for fabricating an in-chip QR code physical storage structure provided in an embodiment of the present invention. Figure 8 This is a schematic diagram of the deposition medium material in the method for preparing the in-chip QR code physical storage structure provided in this embodiment of the invention; Figure 9 This is a schematic diagram of photoresist formation on a dielectric material in the method for fabricating an in-chip QR code physical storage structure provided in an embodiment of the present invention. Figure 10 This is a schematic diagram of the upper electrode filling groove formed in the method for fabricating the in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 11 This is a schematic diagram of the upper electrode filling groove formed in the method for fabricating the in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 12 This is a schematic diagram of removing photoresist after forming the upper electrode filling groove in the method for fabricating the in-chip QR code physical storage structure provided in an embodiment of the present invention. Figure 13 This is a schematic diagram of filling the electrode filling groove in the method for preparing the in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 14 This is a schematic diagram of the initial upper electrode pattern layer formed in the method for fabricating the in-chip QR code physical storage structure provided in an embodiment of the present invention. Figure 15 This is an overall schematic diagram of the initial upper electrode pattern layer formed in the chip-in-chip QR code physical storage structure preparation method provided in the embodiments of the present invention. Figure 16This is a schematic diagram of laser engraving in the method for preparing the in-chip QR code physical storage structure provided in an embodiment of the present invention; Figure 17 This is a schematic diagram of the upper electrode pattern layer formed in the method for fabricating the in-chip QR code physical storage structure provided in an embodiment of the present invention. Figure 18 This is a schematic diagram of the measurement circuit in the chip-in-chip QR code physical storage structure reading method provided in an embodiment of the present invention.

[0022] Explanation of reference numerals in the attached figures 1-Substrate; 2-Lower electrode layer; 3-Dielectric layer; 4-Upper electrode patterned layer; 41-Complete upper electrode unit; 42-Modified upper electrode unit. Detailed Implementation

[0023] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the scope of the present invention.

[0024] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other.

[0025] In this invention, unless otherwise stated, directional terms such as "upper," "lower," "top," and "bottom" are generally used to describe the relative positions of components in relation to the directions shown in the accompanying drawings or in relation to the vertical, perpendicular, or gravitational directions.

[0026] The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0027] Please refer to Figure 1 This invention provides an in-chip QR code physical storage structure, which includes: a lower electrode layer 2; a dielectric layer 3 formed on the lower electrode layer 2; and an upper electrode pattern layer 4 formed on the dielectric layer 3. The upper electrode pattern layer 4 is composed of a plurality of mutually isolated upper electrode units arranged in a matrix. The upper electrode unit includes a complete upper electrode unit 41 and a modified upper electrode unit 42. The modified upper electrode unit 42 has a material missing region. The capacitance value of the complete upper electrode unit 41 relative to the lower electrode layer 2 is greater than the capacitance value of the modified upper electrode unit 42 relative to the lower electrode layer 2.

[0028] Specifically, in this embodiment of the invention, an in-chip QR code physical storage structure is formed on a substrate 1. This in-chip QR code physical storage structure includes a lower electrode layer 2, a dielectric layer 3, and an upper electrode patterning layer 4. The lower electrode layer 2 is a continuous conductive thin film covering the surface of the substrate 1, serving as the common lower electrode for the entire capacitor array. This layer is made of conductive material and formed through a thin film deposition process to ensure good conductivity and interlayer adhesion. The dielectric layer 3 completely covers the lower electrode layer 2 and is composed of insulating material. This layer is formed through thermal growth or chemical vapor deposition processes, requiring uniform and precisely controllable thickness. Its main function is to serve as the insulating dielectric for the capacitors, achieving reliable electrical isolation between the upper and lower electrodes. The upper electrode patterning layer 4 is fabricated on the surface of the dielectric layer 3 and consists of multiple independent upper electrode units. All upper electrode units are made of conductive material and are formed through deposition, photolithography, and etching processes to create a structure arranged in a two-dimensional matrix according to the designed row and column spacing. Each unit is physically and electrically isolated from its adjacent units.

[0029] The upper electrode unit has two defined physical forms. The first is a complete upper electrode unit 41, whose structure remains intact after initial deposition. The second is a modified upper electrode unit 42, which has a material-deficient region formed by selectively removing part or all of the unit's material. The material removal process can be high-precision energy beam technology, such as precisely guiding a focused energy beam to the center of the target unit, causing the material in that region to be selectively removed, thereby forming a through-hole or removing the entire unit. Because of the material deficiency in the central region of the modified upper electrode unit 42, the effective conductive plate area forming a parallel plate capacitor between the unit and the underlying common lower electrode layer 2 is reduced or completely lost. According to the basic principle of parallel plate capacitors, under the same dielectric material and thickness, the capacitance value is proportional to the effective area of ​​the electrode plate. Therefore, the capacitance value formed by the complete upper electrode unit 41 relative to the common lower electrode layer 2 is higher than the capacitance value formed by the modified upper electrode unit 42 relative to the same common lower electrode layer 2.

[0030] During the information writing process, based on predetermined QR code graphic data, the energy beam processing system selectively etches the upper electrode units at specific coordinate positions in the matrix. Some or all of the material of the processed units is permanently removed, forming modified upper electrode units 42 with material-deficient areas; unselected units remain as complete upper electrode units 41. This selective etching process is a physical, irreversible material deformation, thus achieving permanent, one-time information writing. After writing, the distribution state of the complete upper electrode units 41 and the modified upper electrode units 42 is fixedly stored within the chip and cannot be erased or modified by conventional electrical methods.

[0031] During information reading, a capacitance sensing circuit connected to the storage structure is used. This circuit can employ measurement principles such as switched capacitors and charge transfer to measure the capacitance value between each upper electrode unit and the common lower electrode in the matrix, either individually or in parallel. The circuit typically includes a comparison unit that first converts the measured capacitance value into a corresponding electrical signal, then compares this signal with a reference signal value to determine whether the unit is in a high-capacitance or low-capacitance state, and outputs the corresponding digital signal. By scanning the entire matrix, a two-dimensional data array composed of high and low level signals can be obtained, which directly corresponds to the physical pattern stored within the chip.

[0032] The in-chip QR code physical storage structure provided by this invention enables the physical and permanent storage of QR code information within the chip. Since the information carrier is the physical structure of the unit itself, the stored data lacks electrical erasability and its form cannot be tampered with. The storage structure is located inside the chip and is invisible from the outside; the graphic pattern cannot be directly observed from the outside, enhancing information concealment and anti-counterfeiting capabilities. Non-optical reading is performed by detecting capacitance differences, ensuring high reliability and resistance to surface contamination or coating layers.

[0033] Furthermore, the pattern formed by arranging the complete upper electrode unit 41 and the modified upper electrode unit 42 is a physical graphic of a QR code.

[0034] Furthermore, the complete upper electrode unit 41 corresponds to the first logic value encoded by the QR code, and the modified upper electrode unit 42 corresponds to the second logic value encoded by the QR code; wherein the first logic value and the second logic value are different.

[0035] Specifically, in this embodiment of the invention, the complete upper electrode unit 41 and the modified upper electrode unit 42 are arranged on the dielectric layer 3 according to a predetermined rule, and the overall pattern constitutes a complete QR code physical graphic. This QR code graphic conforms to common QR code encoding standards, such as the QR code standard. The position of each upper electrode unit in the matrix corresponds to a basic module in the QR code. Through the initial fabrication of the upper electrode graphic layer 4 and the subsequent selective etching of the laser fuse, the distribution of the complete upper electrode units and the modified upper electrode units is controlled, so that the final unit shape matrix is ​​completely consistent with the layout of the dark and light modules of the target QR code graphic. Each component of the QR code graphic, including positioning marks, separating areas, correction marks, and data areas, is constructed by the corresponding complete upper electrode units 41 or modified upper electrode units 42. The entire pattern, as a complete graphic, is permanently fabricated in the upper electrode layer of the chip.

[0036] The in-chip QR code physical storage structure provided by this invention can directly convert standard QR code information into an unalterable physical structure within the chip, achieving permanent information storage and preventing tampering. The stored QR code graphic is completely concealed within the chip, making it impossible to observe or copy directly from the outside, thus enhancing anti-counterfeiting capabilities and security. Through a fixed correspondence between physical form and logical values, reliable and accurate decoding of information is achieved. The entire reading process is not easily affected by the environment and has strong anti-interference capabilities.

[0037] Furthermore, the material-deficient area occupies the entire upper electrode unit 42.

[0038] Furthermore, the material-deficient area of ​​the modified upper electrode unit 42 is a through hole.

[0039] Specifically, in this embodiment of the invention, the modified upper electrode unit 42 has two specific physical implementation forms depending on the morphology of the material-deficient region. The first form is where the material-deficient region occupies the entire modified upper electrode unit 42, meaning the unit material is completely removed, forming a unit vacancy. The second form is where the material-deficient region is a through-hole penetrating the modified upper electrode unit 42, meaning the unit material is partially removed. Both forms change the equivalent capacitance area of ​​the unit by selectively removing conductive material, thereby achieving different capacitance values.

[0040] In the first configuration (unit vacancy), the material of the modified upper electrode unit 42 is completely removed. The complete absence of upper electrode material at this location results in the inability to form an effective parallel plate capacitance between it and the lower electrode layer 2, leading to an extremely low capacitance value.

[0041] In the second configuration (through-hole), the material-deficient region of the modified upper electrode unit 42 is completely removed, forming a through-hole that penetrates the entire thickness of the upper electrode unit. The through-hole causes the upper electrode unit to completely lose conductive material in the material-deficient region, thus reducing the effective parallel plate capacitance area formed by it and the lower electrode layer 2, resulting in a lower capacitance value. The through-hole can be formed by ablating the entire upper electrode unit with a high-energy-density laser beam in one pass, or by semiconductor processes such as reactive ion etching. The sidewalls of the through-hole are nearly vertical, and the diameter is precisely controlled to ensure the stability of the capacitance value and electrical isolation between units.

[0042] In the specific manufacturing process, standard semiconductor thin film deposition, photolithography, and etching processes are first used to form an initial array of top electrode units arranged in a matrix, electrically isolated from each other, and with uniform thickness on the dielectric layer 3. Subsequently, based on pre-programmed QR code graphic data, a laser processing system or similar focused energy beam equipment is used to selectively process the top electrode units at predetermined positions in the array. For target units requiring empty spaces, the laser is focused on the entire unit area, applying sufficient energy to completely vaporize and remove the material; for target units requiring vias, the laser is focused on the center of the unit, applying energy to locally vaporize the material, forming a via. Unprocessed top electrode units retain their initial intact shape, representing a high-capacitance state. In this way, the binary information of the QR code is permanently and physically engraved in the top electrode graphic layer 4, forming an irreversible geometric deformation.

[0043] The in-chip QR code physical storage structure provided by this invention offers two structural options: through-hole and empty cell, increasing the flexibility of process implementation. The empty cell structure produces the greatest capacitance difference, while the through-hole structure also typically results in a significant capacitance difference; both are beneficial for improving the recognition accuracy and reliability of the readout circuit. Both structures permanently deform to store information, ensuring the immutability and long-term storage stability of the data. Furthermore, the information is hidden within the chip, enhancing security and anti-counterfeiting capabilities.

[0044] Furthermore, the cross-sectional shape of the through hole is one of a circle, a square, or a rectangle.

[0045] Furthermore, the through hole is located in the central region or corner region of the modified upper electrode unit.

[0046] Specifically, in this embodiment of the invention, the through-hole on the modified upper electrode unit can be further defined by its cross-sectional shape and location. The cross-sectional shape of the through-hole can be circular, square, or rectangular. Circular through-holes are typically formed by ablation with a focused circular laser beam, which is relatively simple to control and produces relatively uniform hole walls. Square or rectangular through-holes can be processed by a square forming beam or obtained by contour scanning etching with controlled laser beams, and their shape is geometrically more compatible with the square module pixels commonly found in QR codes. The location of the through-hole on the modified upper electrode unit can be set according to design requirements, with common locations including the central region or corner regions of the unit. When located in the central region, the modified upper electrode unit is approximately symmetrical, with a uniform distribution of the surrounding conductive material, resulting in good repeatability and consistency of capacitance values. When located in a corner region, such as near one or two corners of the unit, the through-hole is off-center, providing more diverse unit shape options for QR code graphic design. Regardless of the shape or location of the through-hole, the conductive material in that local area is completely removed, resulting in a deterministic reduction in the effective conductive area of ​​the modified upper electrode unit relative to the lower electrode layer, thereby forming a stable low-capacitance state.

[0047] The in-chip QR code physical storage structure provided by this invention offers diverse via shapes and positions, providing greater design freedom and process adaptability for the physical graphic layout of QR codes, and enabling compatibility with different manufacturing process preferences or graphic encoding requirements. The flexible selection of via positions enhances the diversity of unit shape variations, which is beneficial for increasing the complexity and information density of QR code patterns.

[0048] Furthermore, the dielectric layer 3 is made of silicon dioxide, and the lower electrode layer 2 and the upper electrode pattern layer 4 are made of copper.

[0049] Specifically, in this embodiment of the invention, the dielectric layer 3 is made of silicon dioxide. Silicon dioxide as the dielectric layer 3 can be directly grown on the copper surface serving as the lower electrode layer 2 via thermal oxidation, or deposited on the lower electrode layer 2 via chemical vapor deposition. The silicon dioxide layer formed by thermal oxidation has good density, stable interface characteristics with the underlying copper layer (which may have a thin oxide layer or adhesion layer on its surface), and high insulation strength. When using chemical vapor deposition, plasma-enhanced chemical vapor deposition or low-pressure chemical vapor deposition techniques can be used to deposit a uniformly thick silicon dioxide film with good coverage at a lower temperature. The thickness of the dielectric layer 3 can be precisely designed and controlled according to the target capacitance value. Silicon dioxide has high dielectric strength, stable chemical properties, and broad compatibility with subsequent semiconductor processes, effectively isolating the upper and lower electrodes and preventing leakage.

[0050] Both the lower electrode layer 2 and the upper electrode patterning layer 4 are made of copper. Copper is a widely used metal material for back-end interconnects in integrated circuits and has low resistivity. The lower electrode layer 2, serving as a common electrode, uses copper and can be deposited and electroplated to form a low-resistivity, flat, continuous layer, providing a stable reference potential for all the capacitor cells above. The upper electrode patterning layer 4 also uses copper, and its fabrication process is similar to that of metal interconnect layers in existing chip manufacturing. First, a copper thin film is formed on the dielectric layer 3, and then a matrix of isolated cell patterns is defined using photolithography and etching processes. Copper electrodes have good conductivity, which reduces parasitic resistance in the signal path during capacitance measurement, facilitating accurate and rapid detection of minute capacitance differences.

[0051] The in-chip QR code physical storage structure provided by the present invention can ensure the insulation reliability and long-term electrical stability of the capacitor structure, and reduce signal reading loss and distortion.

[0052] Please refer to Figure 2 The second aspect of the present invention provides a method for fabricating an in-chip QR code physical storage structure, the method comprising: S101: forming a lower electrode layer 2; S102: forming a dielectric layer 3 on the lower electrode layer 2; S103: forming an upper electrode pattern layer 4 on the dielectric layer 3; wherein the upper electrode pattern layer 4 is composed of a plurality of mutually isolated upper electrode units arranged in a matrix, the upper electrode unit including a complete upper electrode unit 41 and a modified upper electrode unit 42, the modified upper electrode unit 42 having a material missing region, and the capacitance value of the complete upper electrode unit 41 relative to the lower electrode layer 2 being greater than the capacitance value of the modified upper electrode unit 42 relative to the lower electrode layer 2.

[0053] Further, forming the upper electrode pattern layer 4 on the dielectric layer 3 includes: forming a plurality of mutually isolated initial upper electrode units arranged in a matrix on the dielectric layer 3; selecting a modified upper electrode unit 42 to be manufactured from the initial upper electrode units; performing a material removal process on the central region of the modified upper electrode unit 42 to be manufactured to form a modified upper electrode unit 42 with a material missing region; the unselected initial upper electrode units serve as complete upper electrode units 41; and forming the upper electrode pattern layer 4 with complete upper electrode units 41 and modified upper electrode units 42.

[0054] Furthermore, laser filament technology is used to remove material from the central region of the modified upper electrode unit 42 to be fabricated.

[0055] Specifically, in embodiments of the present invention, such as Figures 3-7As shown, a substrate is first provided; in this embodiment, the substrate is silicon dioxide. Then, a layer of photoresist is spin-coated onto the substrate. A lower electrode filling trench is formed on the photoresist using exposure and development techniques. Electrode material is then filled into the lower electrode filling trench using electroplating or physical vapor deposition. The electrode material can be a low-resistivity metal such as copper or aluminum; in this embodiment, copper is preferred. Next, excess electrode material on the surface is removed by chemical mechanical polishing or a similar process. After removing the residual photoresist, a smooth lower electrode material layer 2 is finally obtained on the substrate 1.

[0056] Subsequently, a dielectric layer 3 is formed on the lower electrode layer 2. For example... Figure 8-12 As shown, a uniform insulating dielectric material, such as silicon dioxide, is grown or deposited on the lower electrode layer 2 using thermal oxidation or chemical vapor deposition processes. Next, a layer of photoresist is spin-coated onto the dielectric material surface. Through exposure and development, the designed matrix unit pattern is transferred onto the photoresist, exposing specific areas on the dielectric material. Using the photoresist as a mask, the exposed dielectric material is etched to form upper electrode filling trenches. The photoresist is removed, and the dielectric material below the filling trenches, together with the dielectric material in the unetched areas, constitutes a continuous dielectric layer 3. The thickness of dielectric layer 3 is precisely designed to determine the reference capacitance value; this layer is used to achieve reliable electrical isolation between the upper and lower electrodes.

[0057] like Figure 13-15 As shown, electrode material is deposited across the entire surface of the structure using an electroplating process, filling the upper electrode filling groove and covering the surface. The electrode material can be a low-resistivity metal such as copper or aluminum; copper is preferred in this embodiment. Next, excess copper is removed from the surface, ultimately resulting in an upper electrode pattern layer 4 on the dielectric layer 3. The upper electrode pattern layer 4 comprises multiple initial upper electrode units arranged in a matrix and electrically isolated from each other. At this point, all units are complete copper metal blocks.

[0058] like Figure 16-17As shown, information is written according to the QR code encoding data to be stored, forming the final upper electrode pattern layer 4 containing complete upper electrode units 41 and modified upper electrode units 42. To determine which coordinate positions in the matrix need to represent a low capacitance state (logic "0"), a laser filament technique is used to precisely position the focused laser beam onto these selected units. By controlling the laser's energy density, pulse width, and duration, the conductive material in specific areas of the target unit is selectively ablated and vaporized, creating material-deficient regions. By adjusting parameters, the degree and extent of material removal can be controlled, resulting in different shapes of material-deficient regions, such as through-holes penetrating the unit thickness or complete removal of the unit material. The units processed in this way become modified upper electrode units 42, with reduced or completely lost effective conductive area, leading to a decrease in capacitance. Units in the matrix not irradiated by the laser retain their initial complete form, becoming complete upper electrode units 41, corresponding to a high capacitance state (logic "1"). The binary information of the QR code is thus stored inside the chip through the permanent difference in the physical form of the units.

[0059] The method for fabricating an in-chip QR code physical storage structure provided by this invention combines mature semiconductor planar technology with subsequent laser engraving technology. The process is clear and highly compatible with existing chip manufacturing lines. The patterning process ensures the precision and consistency of the electrode unit array, while laser processing enables rapid, accurate, and irreversible writing of information. The resulting storage structure stores data in physical form within the chip, making it impossible to erase, write, or tamper with electrically. It also possesses concealment, significantly improving the permanence, security, and anti-counterfeiting capabilities of information storage.

[0060] A third aspect of the present invention provides a method for reading an in-chip QR code physical storage structure, applied to the in-chip QR code physical storage structure described above. The method includes: measuring the capacitance value of each upper electrode unit relative to the lower electrode layer 2 within the in-chip QR code physical storage structure; determining the capacitance state of the corresponding upper electrode unit based on the capacitance value; wherein the capacitance state includes a high capacitance state and a low capacitance state; and decoding according to QR code encoding rules based on the arrangement order of the upper electrode units in the matrix and the capacitance state of each upper electrode unit to obtain the stored QR code information.

[0061] Specifically, in this embodiment of the invention, an electrical connection with the memory structure is first established, the common lower electrode layer 2 is connected to a fixed reference potential, and each upper electrode unit is sequentially connected to the memory structure using a row-by-row, column-by-column scanning method through row and column gating circuits integrated inside or outside the chip. Figure 18 The measurement circuit shown.

[0062] When measuring the capacitance value of each upper electrode unit relative to the lower electrode layer 2, a switched capacitor circuit, a charge transfer circuit, or a capacitor-to-voltage conversion circuit based on AC excitation can be used. In a specific embodiment, each upper electrode unit in the matrix is ​​selected sequentially by row and column scanning. A small-amplitude AC test signal or pulse signal is applied to the selected upper electrode unit, while the current response, charge transfer amount, or voltage change of the capacitor formed by the upper electrode unit and the lower electrode layer 2 is detected. The measurement circuit (such as a transimpedance amplifier, integrator, or lock-in amplifier) ​​converts these analog response signals into electrical signals corresponding to the capacitance value.

[0063] The measured electrical signal corresponding to the capacitance is input to the capacitance comparison module to determine the capacitance state of each upper electrode unit. Typically, a reference electrical signal threshold is preset or dynamically calibrated through experimentation or calibration. The capacitance value corresponding to this threshold lies between the capacitance values ​​of the complete upper electrode unit and the modified upper electrode unit. The measured electrical signal of each unit is compared with the reference threshold: if the measured value is higher than the threshold, the unit is determined to be in a high capacitance state; if the measured value is lower than the threshold, it is determined to be in a low capacitance state. The comparison result can be directly output as a digital logic signal by a voltage comparator or analog-to-digital converter, for example, a high capacitance state corresponds to logic "1", and a low capacitance state corresponds to logic "0", thus mapping the physical capacitance value to binary data.

[0064] After obtaining the binary state sequence of all units in the entire matrix, decoding is performed according to the QR code encoding rules. The decoding process first restores the binary state sequence to a two-dimensional bitmap array consistent with the stored sequence, based on the row and column arrangement of the upper electrode units in the matrix. The bitmap array contains the QR code's positioning graphic, format information, version information, and data codewords. Subsequently, the bitmap is decoded according to the encoding specifications of the selected QR code standard (such as QR code, Data Matrix, etc.). The decoding steps typically include: locating and correcting the image orientation, reading format information to obtain the error correction level and mask mode, applying demasking operations, extracting data codewords and error correction codewords in a specific order, using error correction algorithms (such as Reed-Solomon codes) to detect and correct potential reading errors, and finally converting the data codewords back to the original stored information data according to the encoding rules, completing the information reading.

[0065] A fourth aspect of the present invention provides a chip that includes the in-chip QR code physical storage structure described above.

[0066] A fifth aspect of the present invention provides a circuit comprising the in-chip QR code physical storage structure described above.

[0067] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the specific details of the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0068] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0069] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A chip-based QR code physical storage structure, characterized in that, The in-chip QR code physical storage structure includes: Lower electrode layer; A dielectric layer formed on the lower electrode layer; An upper electrode pattern layer is formed on the dielectric layer, the upper electrode pattern layer being composed of a plurality of mutually isolated upper electrode units arranged in a matrix; wherein, the upper electrode unit includes a complete upper electrode unit and a modified upper electrode unit, the modified upper electrode unit having a material missing region, and the capacitance value of the complete upper electrode unit relative to the lower electrode layer being greater than the capacitance value of the modified upper electrode unit relative to the lower electrode layer.

2. The in-chip QR code physical storage structure according to claim 1, characterized in that, The pattern formed by arranging the complete upper electrode unit and the modified upper electrode unit is a physical graphic of a QR code.

3. The in-chip QR code physical storage structure according to claim 2, characterized in that, The complete upper electrode unit corresponds to a first logic value encoded in a QR code, and the modified upper electrode unit corresponds to a second logic value encoded in a QR code; wherein the first logic value and the second logic value are different.

4. The in-chip QR code physical storage structure according to claim 1, characterized in that, The area lacking material occupies the entire upper electrode unit.

5. The in-chip QR code physical storage structure according to claim 1, characterized in that, The missing material area is a through hole.

6. The in-chip QR code physical storage structure according to claim 5, characterized in that, The cross-sectional shape of the through hole is one of a circle, a square, or a rectangle.

7. The in-chip QR code physical storage structure according to claim 5, characterized in that, The through-hole is located in the central or corner region of the modified upper electrode unit.

8. The in-chip QR code physical storage structure according to claim 1, characterized in that, The dielectric layer is made of silicon dioxide, and the lower electrode layer and the upper electrode pattern layer are made of copper.

9. A method for fabricating an in-chip QR code physical storage structure, characterized in that, The method for fabricating the in-chip QR code physical storage structure includes: Form the lower electrode layer; A dielectric layer is formed on the lower electrode layer; An upper electrode pattern layer is formed on the dielectric layer; wherein the upper electrode pattern layer is composed of a plurality of mutually isolated upper electrode units arranged in a matrix, the upper electrode unit including a complete upper electrode unit and a modified upper electrode unit, the modified upper electrode unit having a material missing region, and the capacitance value of the complete upper electrode unit relative to the lower electrode layer being greater than the capacitance value of the modified upper electrode unit relative to the lower electrode layer.

10. The method for fabricating an in-chip QR code physical storage structure according to claim 9, characterized in that, The process of forming an upper electrode pattern layer on the dielectric layer includes: Multiple isolated initial upper electrode units are formed in a matrix arrangement on the dielectric layer; Select the modified upper electrode unit to be fabricated from the initial upper electrode units; The modified top electrode unit to be fabricated is subjected to material removal processing to form a modified top electrode unit with a material missing area. The unselected initial top electrode unit is used as a complete top electrode unit, and the complete top electrode unit and the modified top electrode unit are used to form the top electrode pattern layer.

11. The method for fabricating an in-chip QR code physical storage structure according to claim 10, characterized in that, Laser fusion technology is used to remove material from the modified upper electrode unit to be fabricated.

12. A method for reading a QR code physical storage structure within a chip, applied to the QR code physical storage structure within a chip as described in any one of claims 1-8, characterized in that, The method for reading the QR code physical storage structure within the chip includes: Measure the capacitance value of each upper electrode unit relative to the lower electrode layer within the QR code physical storage structure inside the chip; The capacitance state of the corresponding upper electrode unit is determined based on the capacitance value; wherein, the capacitance state includes a high capacitance state and a low capacitance state. Based on the arrangement order of the upper electrode units in the matrix and the capacitance state of each upper electrode unit, the QR code information is obtained by decoding according to the QR code encoding rules.

13. A chip, characterized in that, The chip includes the in-chip QR code physical storage structure as described in any one of claims 1-8.

14. A circuit, characterized in that, The circuit includes the in-chip QR code physical storage structure as described in any one of claims 1-8.

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