Semiconductor encapsulating composition and semiconductor package

Abstract

A semiconductor encapsulation composition and a semiconductor package are provided. The semiconductor encapsulation composition includes a high heat dissipation resin, a curing agent, and a first filler. The first filler includes a plurality of particles, each particle having a diamond particle core and a shell surrounding the diamond particle core, wherein the shell includes at least one of aluminum oxide, magnesium oxide, aluminum nitride, or boron nitride.

Description

Technical Field

[0001] This disclosure relates to semiconductor packaging compositions and semiconductor packages including semiconductor packaging structures formed therefrom. Background Technology

[0002] The recent trend towards miniaturization and higher functionality in electronic devices demands higher densities in semiconductor packages. This increased density generates significant heat within the package, potentially degrading semiconductor performance. Therefore, there is growing interest in ways to dissipate the heat generated within the semiconductor package to its exterior. Heat generated within the package is dissipated through filler compositions, and epoxy molding compounds (EMC), die-attach films (DAF), and underfills are commonly used as filler compositions for semiconductor packages. Consequently, the thermal conductivity of these filler compositions is of interest. Summary of the Invention

[0003] This disclosure provides semiconductor packaging compositions with improved thermal conductivity and flowability.

[0004] This disclosure also provides a semiconductor package comprising a semiconductor package structure having improved thermal conductivity and heat dissipation characteristics formed from a semiconductor packaging composition.

[0005] The technical objectives of this invention are not limited to those described above, and other technical objectives not mentioned can be clearly understood by those skilled in the art from the following description.

[0006] An embodiment of the present invention provides a semiconductor packaging composition comprising: a high heat dissipation resin; a curing agent; and a first filler comprising a plurality of particles, each particle having a diamond particle core and a shell surrounding the diamond particle core, wherein the shell comprises at least one material selected from alumina, magnesium oxide, aluminum nitride, or boron nitride.

[0007] In an embodiment of the present invention, a semiconductor packaging composition includes: a high heat dissipation resin; a curing agent; and a first filler comprising a plurality of particles, each particle having a diamond particle core and a shell surrounding the diamond particle core, wherein the shell comprises a high heat dissipation inorganic material, and wherein the thickness of the shell is equal to or greater than 1 / 10 of the diameter of the diamond particle core and equal to or greater than approximately 1 μm.

[0008] In an embodiment of the present invention, a semiconductor package includes: a packaging substrate; a semiconductor chip located on the packaging substrate; and a semiconductor packaging composition covering the semiconductor chip, wherein the semiconductor packaging composition includes: a polymer matrix and a first filler dispersed in the polymer matrix, and wherein the first filler includes a plurality of particles, each particle having a diamond core and a shell surrounding the diamond core, wherein the shell comprises at least one material selected from alumina, magnesium oxide, aluminum nitride, or boron nitride. Attached Figure Description

[0009] The accompanying drawings are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the inventive concept and, together with the description, serve to explain the principles of the inventive concept. In the drawings: Figure 1 This is a cross-sectional view of a semiconductor package including a semiconductor packaging structure according to an embodiment of the present invention; Figure 2 yes Figure 1 A magnified view of the EV1; Figure 3 It corresponds to Figure 1 A magnified view of the EV1; Figure 4A This is a schematic diagram showing the first packing material; Figure 4B It is a schematic diagram showing a cross-section of the first packing material; Figure 5 It is a conceptual image illustrating the flowability of the first polymer resin surrounding the first filler; Figure 6 It is a graph showing the thermal conductivity of the semiconductor package structure formed according to Comparative Example 1, Comparative Example 2, Comparative Example 3 and Example 1; Figure 7 It is a graph showing the thermal conductivity of a semiconductor package structure prepared by using a first filler and a second filler together as fillers; and Figure 8 This is a diagram illustrating a semiconductor package according to some embodiments. Detailed Implementation

[0010] In the following description, a semiconductor packaging composition and a semiconductor package including a semiconductor packaging structure formed therefrom, based on the present invention, will be described with reference to the accompanying drawings.

[0011] Items described herein in a singular form may be provided in a plural form, as can be seen, for example, in the accompanying figures. Therefore, unless the context otherwise indicates, a description of a single item provided in a plural form should be understood to apply to the remaining multiple items.

[0012] It will be understood that, when used in this specification, the terms “comprising” and / or “including” specify the presence of the described features, elements and / or components, but do not exclude the presence or addition of one or more other features, elements, components and / or groups thereof.

[0013] It will be understood that although the terms “first” and “second”, etc., may be used herein to describe various elements or components, these elements or components should not be limited by these terms. Unless the context otherwise indicates, these terms are used only to distinguish one element or component from another, for example, as a naming convention. Therefore, a first element or component discussed in one part of the specification may be referred to as a second element or component in another part of the specification or in the claims without departing from the teachings of the invention. Furthermore, in some cases, even if descriptive terms such as “first” and “second” are not used in the specification, they may still be referred to as “first” or “second” in the claims to distinguish the different claimed elements from one another.

[0014] When referring to a structure or region, the term "identical" as used herein does not necessarily mean an exact match, but is intended to encompass nearly identical structures or regions within typical variations that may result from conventional manufacturing processes. The term "substantially" may be used herein to emphasize this meaning unless the context or other statements indicate otherwise. The terms "sphere" or "spherical" as used herein are intended to encompass both exact spheres and near-spheres.

[0015] As used herein, the terms “above” or “cover” are intended to indicate that an element is above or next to another element. Elements may be in contact or not. For an element to “cover” another element, it does not need to cover the entire element to be considered a “cover.” The term is intended to encompass all or any part of the element below it that is “covered.”

[0016] As used herein, the terms “surrounding” and “surrounded” are intended to indicate that the element is outside other elements. The element may be in contact or not in contact. Surrounding an element may completely surround an internal element or may not completely surround an internal element. The semiconductor encapsulation composition conceived according to the present invention can be defined as an epoxy molding compound (EMC). For example, the semiconductor encapsulation composition may be a semiconductor encapsulation filler composition. The resin can be polymerized using monomers with a molecular weight of about 50 g / mol to about 1000 g / mol, or about 100 g / mol to about 900 g / mol. For example, the semiconductor encapsulation composition may be in powder form.

[0017] The semiconductor packaging composition may include a first polymer resin, a curing agent, additives, and a first filler. The first polymer resin may be, for example, an epoxy resin. In this specification, the first polymer resin may be referred to as a high thermal conductivity resin. A high thermal conductivity resin may be a resin formulated to effectively transfer and dissipate heat from its source, thereby preventing overheating. This is achieved by incorporating materials with high thermal conductivity.

[0018] High heat dissipation resins can have, for example, one mesogen unit in Formula 1 or two mesogen units in Formula 2. High heat dissipation resins containing mesogen units can have high molecular orientation and crystallinity. The more mesogen units in a high heat dissipation resin, the higher the molecular orientation.

[0019] [Formula 1]

[0020] [Equation 2]

[0021] The polyarylate unit included in the high heat dissipation resin may include polymer compounds represented by formula 3A, 3B, 3C, 3D, 3E, 3F, 3G, or 3H. The substituents shown in the polymer compounds may be one of hydrogen (H), chlorine (Cl), or methyl (CH3).

[0022] [Formula 3A]

[0023] [Formula 3B]

[0024] [Formula 3C]

[0025] [3D Style]

[0026] [Formula 3E]

[0027] [Formula 3F]

[0028] [Type 3G]

[0029] [Formula 3H]

[0030] The composition of the high heat-dissipating resin may be from about 2 wt% to about 10 wt%, or from about 3 wt% to 9 wt%, relative to the total amount of the semiconductor packaging composition.

[0031] According to some embodiments, the semiconductor packaging composition may further include a second polymeric resin. The second polymeric resin may be, for example, an epoxy resin. In example embodiments, the second polymeric resin is an epoxy resin, such as the first polymeric resin, but may include materials different from the first polymeric resin. Compared to the first polymeric resin, the second polymeric resin may be referred to as a "common resin".

[0032] The second polymer resin may include a thermosetting polymer. The thermosetting polymer may be at least one polymer selected from the group consisting of epoxy-based polymers and bismaleimide-based polymers.

[0033] For example, the epoxy polymer can be one or more of bisphenol A epoxy resin, bisphenol F epoxy resin, naphthalene epoxy resin, aminophenol epoxy resin, hydrated bisphenol epoxy resin, alicyclic epoxy resin, alcohol ether epoxy resin, alicyclic aliphatic epoxy resin, fluorene epoxy resin, siloxane epoxy resin, etc., but the inventive concept is not limited thereto. These can be used alone, or at least two of them can be mixed and used together.

[0034] The bismaleimide polymer can be a polymer obtained by polymerization of a maleimide monomer comprising one or more maleimide groups or two or more maleimide groups. For example, the maleimide monomer can be N-phenylmaleimide, N-(2-tolyl)maleimide, N-(4-tolyl)maleimide, N-(2,6-xylyl)maleimide, bis(4-maleimidephenyl)methane, 2,2-bis(4-(4-maleimidephenoxy)-phenyl)propane, bis(3,5-dimethyl-4-maleimidephenyl)methane, bis(3-ethyl-5-methyl-4-maleimidephenyl)methane, bis(3,5-diethyl-4-maleimidephenyl)methane, polyphenylmethane bismaleimide, other maleimides including biphenyl structures, etc., but the inventive concept is not limited thereto. Furthermore, bismaleimide polymers can be obtained from prepolymers comprising maleimide groups. For example, the prepolymer can be any one of the following, or a mixture of at least two of the following: N-phenylmaleimide prepolymer, N-(2-tolyl)maleimide prepolymer, N-(4-tolyl)maleimide prepolymer, N-(2,6-xylyl)maleimide prepolymer, bis(4-maleimidephenyl)methane prepolymer, 2,2-bis(4-(4-maleimidephenoxy)-phenyl Propane prepolymer, bis(3,5-dimethyl-4-maleimidephenyl)methane prepolymer, bis(3-ethyl-5-methyl-4-maleimidephenyl)methane prepolymer, bis(3,5-diethyl-4-maleimidephenyl)methane prepolymer, polyphenylmethane bismaleimide prepolymer, maleimide prepolymer containing biphenyl structure, prepolymers of N-phenylmaleimide and amino compounds, N-(2-tolyl) Prepolymers of maleimide and amino compounds, prepolymers of N-(4-tolyl)maleimide and amino compounds, prepolymers of N-(2,6-xylyl)maleimide and amino compounds, prepolymers of bis(4-maleimidephenyl)methane and amino compounds, prepolymers of 2,2-bis(4-(4-maleimidephenoxy)-phenyl)propane and amino compounds, prepolymers of bis(3,5-dimethyl-4-maleimidephenyl)propane and amino compounds. The invention may include prepolymers of (3-ethyl-5-methyl-4-maleimidephenyl)methane and amino compounds, prepolymers of bis(3,5-diethyl-4-maleimidephenyl)methane and amino compounds, prepolymers of amino compounds and maleimides containing biphenyl structures, or prepolymers of polyphenylmethane bismaleimide and amino compounds, but the inventive concept is not limited thereto.

[0035] The composition of the second polymer resin may be from about 2 wt% to about 10 wt%, or from about 3 wt% to 9 wt%, relative to the total amount of the semiconductor packaging composition.

[0036] The curing agent may include anhydride groups. In the example, the curing agent may react with a first polymer resin and a second polymer resin to form a matrix. The curing agent may include one or more of the following: nadic maleic anhydride, dodecyl succinic anhydride, maleic anhydride, succinic anhydride, methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, pyromellitic dianhydride, tetrahydrophthalic anhydride, cyclohexanedicarboxylic anhydride, methyltetrahydrophthalic anhydride, 1,2,4-benzenetricarboxylic anhydride, benzophenone-3,3', and / or 4,4'-tetracarboxylic dianhydride.

[0037] The curing agent may be present in a proportion of about 2 wt% to about 10 wt%, or about 3 wt% to 9 wt%, relative to the total amount of the semiconductor packaging composition.

[0038] Additives may include curing rate modifiers, coupling agents, and another material (such as colorants (e.g., carbon black), adhesive polymers, etc.) as needed.

[0039] Curing rate modifiers can optimize process time by adjusting the curing reaction rate of epoxy resins or other polymer resins, and can improve mechanical or thermal properties by inducing uniform curing. For example, curing rate modifiers may include at least one of the following: imidazoles and their derivatives (such as 2-methylimidazolium or 2-ethyl-4-methylimidazolium), organophosphorus compounds (such as triphenylphosphine (TPP), tetraphenylphosphonium bromide (TPPB)), metal salts (such as zinc salts), amines and amine derivatives (such as triethylamine or benzyldimethylamine), phenolic compounds (such as phenolic novolac resin), or organic acids and anhydrides (such as benzoic acid or maleic anhydride).

[0040] Coupling agents can enhance mechanical strength, thermal conductivity, and other properties by improving the interfacial adhesion between the filler and the polymer resin. For example, coupling agents may include at least one of silane coupling agents, γ-glycidoxypropyltrimethoxysilane (GPTMS), and / or aminosilanes.

[0041] Adhesive polymers can control viscosity during the encapsulation process, maintain the physical structure of the semiconductor package after curing the semiconductor package composition, and provide stability to the semiconductor package structure after curing. Adhesive polymers can include thermoplastic polymers. For example, a thermoplastic polymer can be at least one polymer selected from the group consisting of acrylate polymers and phenoxy polymers. Acrylate polymers can be obtained by free radical polymerization using acrylic monomers as raw materials.

[0042] According to some embodiments, for example, the acrylic monomer may be methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, 2-ethylhexyl methacrylate, n-octyl methacrylate, isooctyl methacrylate, n-nonyl methacrylate, isononyl methacrylate, n-decyl methacrylate, isodecyl methacrylate, n-dodecyl methacrylate, n-tridecyl methacrylate, n-tetradecyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, etc. 4-Hydroxybutyl acrylate, 6-Hydroxyhexyl acrylate, 8-Hydroxyoctyl acrylate, 10-Hydroxydecyl acrylate, 12-Hydroxylaurate acrylate, 4-Hydroxymethylcyclohexyl acrylate, N-Hydroxymethyl (meth)acrylamide, ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, divinylbenzene, N,N'-methylenebisacrylamide.

[0043] Phenoxy polymers can be obtained from polymeric monomers such as phenoxyethyl acrylate, phenoxydiethylene glycol acrylate, poly(ethylene glycol)phenyl acrylate, ethoxynonylphenol acrylate, nonylphenoxypropylene glycol acrylate, ethoxynonylphenol acrylate, or 2-hydroxy-3-phenoxypropyl (meth)acrylate. According to some embodiments, the phenoxy polymer can be poly(2,6-dipentyl-1,4-phenylene) ether, poly(2,6-diphenyl-1,4-phenylene) ether, poly(2-methyl-6-phenyl-1,4-phenylene) ether, poly(2,6-dibenzyl-1,4-phenylene) ether, poly(2,6-dimethyl-1,4-phenylene) ether, poly(2,6-diethyl-1,4-phenylene) ether, poly(2-methyl-6-ethyl-1,4-phenylene) ether, poly(… 2,6-Dipropyl-1,4-phenylene) ether, poly(2-ethyl-6-propyl-1,4-phenylene) ether, poly(2-methyl-1,4-phenylene) ether, poly(3-methyl-1,4-phenylene) ether, poly(2-methyl-6-allyl-1,4-phenylene) ether, poly(2,3,6-trimethyl-1,4-phenylene) ether, poly(2,3,5,6-tetramethyl-1,4-phenylene) ether, poly(2,5-dimethyl-1,4-phenylene) ether.

[0044] The additive composition can be from 0 wt% to about 5 wt% or from 0 wt% to about 4 wt% relative to the total amount of the semiconductor packaging composition.

[0045] The first filler may have a core-shell structure. According to an example embodiment, the first filler may include a plurality of particles, each having a core and a shell surrounding the core. The outermost surface of the first filler may be spherical. The core may be a diamond particle core, wherein the diamond particles have a particle size of approximately 1 μm to approximately 100 μm or approximately 5 μm to approximately 95 μm. The shell may include a highly heat-dissipating inorganic material. The highly heat-dissipating inorganic material may be at least one material selected from alumina (Al₂O₃), magnesium oxide (MgO), aluminum nitride (AlN), and / or boron nitride (BN). The first filler may be formed by forming a shell of highly heat-dissipating inorganic material on the diamond particles serving as the core in chemical vapor deposition, physical vapor deposition (e.g., sputtering), and sol-gel processing.

[0046] According to some embodiments, the semiconductor packaging composition may further include a second filler made of a high-heat-dissipating inorganic material. For example, the particles of the second filler may include alumina spheres, magnesium oxide spheres, aluminum nitride spheres, and / or boron nitride spheres. The second filler may have a particle size of about 0.1 μm to about 100 μm, or about 0.5 μm to about 95 μm.

[0047] The composition of the first filler relative to the total amount of the semiconductor packaging composition can be from about 1 wt% to about 93 wt%, or from about 5 wt% to about 90 wt%. Alternatively, the composition of the mixed filler, which is a mixture of the first and second fillers, can be from about 1 wt% to about 93 wt%, or from about 5 wt% to about 90 wt%, relative to the total amount of the semiconductor packaging composition. The second filler can have a smaller mass ratio than the first filler. For example, in the semiconductor packaging composition, the composition of the first filler can be greater than the composition of the second filler relative to the total amount of the semiconductor packaging composition.

[0048] Figure 1 This is a cross-sectional view of a semiconductor package including a semiconductor packaging structure according to the present invention. Figure 2 yes Figure 1 An enlarged view of the EV1. Figure 3 It corresponds to Figure 1 An enlarged view of the EV1.

[0049] refer to Figure 1 The semiconductor package 1000 may include a package substrate 200, a semiconductor chip 100, and a semiconductor package structure MD.

[0050] The packaging substrate 200 can be a printed circuit board or a redistribution substrate. The packaging substrate 200 may include a lower substrate pad 210 and an upper substrate pad 220. External connection terminals 280 may be disposed on the lower substrate pad 210. The external connection terminals 280 may include conductive terminals such as solder balls and posts.

[0051] Semiconductor chip 100 may be disposed on the upper surface of package substrate 200. For example, semiconductor chip 100 may be mounted on package substrate 200 in a flip-chip configuration. Semiconductor chip 100 may be a memory chip or a logic chip. Memory chip may be a volatile memory semiconductor device such as dynamic random access memory (DRAM) and static random access memory (SRAM), or a non-volatile memory semiconductor device such as phase-change random access memory (PRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FeRAM), and resistive random access memory (RRAM). Logic chip may be a central processing unit (CPU) chip, a graphics processing unit (GPU) chip, an application processor (AP) chip, or an application-specific integrated circuit (ASIC) chip. Semiconductor chip 100 may include a first surface 100a and a second surface 100b facing each other. First surface 100a may correspond to an active surface on which an integrated circuit is disposed. Semiconductor chip 100 may include chip pads 110 disposed on first surface 100a.

[0052] Internal connection terminals 180 may be disposed between chip pads 110 and upper substrate pads 220. For example, internal connection terminals 180 may be bumps. Internal connection terminals 180 may include conductive materials, such as solder.

[0053] The lower substrate pad 210, the upper substrate pad 220, and the chip pad 110 may include metals such as copper or aluminum.

[0054] The semiconductor package 1000 may further include an underfill 600. The underfill 600 may be disposed between the upper surface of the package substrate 200 and the first surface 100a of the semiconductor chip 100. The underfill 600 may cover the side surface of the internal connection terminal 180. The underfill 600 may include an epoxy resin material.

[0055] The semiconductor package structure MD can cover the upper surface of the package substrate 200, the side surface and second surface 100b of the semiconductor chip 100, and the side surface of the bottom filler 600.

[0056] The semiconductor package structure MD can be a structure formed by melting and solidifying the semiconductor package composition described above according to the present invention. The semiconductor package structure MD may include a polymer matrix 300, a first filler 400, and additives.

[0057] The polymer matrix 300 may have a three-dimensional network structure formed by reacting the polymer resin and curing agent of the semiconductor encapsulation composition described above. For example, the polymer matrix 300 may include ester bonds formed by reacting the epoxy groups of the polymer resin with the anhydrides of the curing agent. For example, the polymer matrix 300 may be formed by reacting a first polymer resin and a curing agent. According to some embodiments, the polymer matrix 300 may be formed by reacting a mixed polymer resin in which a curing agent is mixed with a first polymer resin and a second polymer resin. Additives and the first filler 400 may be provided in the form of a first filler 400 dispersed in the polymer matrix 300. To clearly illustrate the construction of the first filler 400, illustrations of the additives are omitted in the figures.

[0058] The particles of the first filler 400 may include a core 410 and a shell 420. The first filler 400 of the semiconductor package structure MD may have the same structure as the first filler of the semiconductor package composition described above. The core 410 may be diamond particles. The shell 420 may include at least one material selected from alumina (Al2O3), magnesium oxide (MgO), aluminum nitride (AlN), and / or boron nitride (BN). The core 410 may have a particle size of about 1 μm to about 100 μm, or about 5 μm to about 95 μm, but may have an average particle size of about 10 μm to about 45 μm. According to some embodiments, the core 410 may have an average particle size of about 50 μm to about 80 μm.

[0059] The heat generated by the semiconductor chip 100 can be dissipated to the outside of the chip through the first filler 400 and the polymer matrix 300 surrounding the semiconductor chip 100.

[0060] According to some embodiments, such as Figure 3 In the semiconductor package structure MD, a second filler 500 may also be included. The particles of the second filler 500 may include alumina spheres, magnesium oxide spheres, aluminum nitride spheres, and / or boron nitride spheres. The particles of the second filler 500 may be dispersed in the polymer matrix 300. The second filler 500 may be disposed in the polymer matrix 300 in a state where the particles of the second filler 500 are mixed with the particles of the first filler 400 in the same region.

[0061] Figure 4A This is a schematic diagram showing the first packing material. Figure 4B This is a schematic diagram showing a cross-section of the first packing material.

[0062] like Figure 4A and Figure 4B As shown, due to the crystal structure of diamond itself, core 410 can have a polygonal structure. For example, as... Figure 4AAs shown, core 410 can have a dodecahedral shape. For example, as Figure 4B As shown, the cross-section of core 410 can have a hexagonal shape. Core 410 can exemplarily have a dodecahedral shape and a hexagonal cross-section, and can also have another shape.

[0063] like Figure 4B As shown, the radius R2 of the shell 420 can be greater than the maximum radius R1 of the core 410 (e.g., half the diameter). The volume of the shell 420 can be equal to or greater than approximately 33% of the volume of the first packing 400, and less than approximately 60% of the volume of the first packing 400. For example, the volume of the shell 420 can be equal to or greater than approximately 40% of the volume of the first packing 400.

[0064] Shell 420 may have a surface that is spherical (or nearly spherical) within the corresponding volume range. For example... Figure 4A As shown, the maximum thickness X1 of the shell 420 can be equal to or greater than approximately 1 / 10 of the diameter 410D of the core 410 and less than approximately 1 / 5 of the diameter 410D of the core 410. For example, when the core 410 has a dodecahedral shape and the diameter 410D is approximately 45 μm, the maximum thickness X1 of the shell 420 can be approximately 4.6 μm or approximately 4.3 μm. The thickness X1 of the shell 420 can be several μm, which is equal to or greater than approximately 1 μm and less than approximately 10 μm, or greater than approximately 2 μm and less than approximately 9 μm. When the diameter 410D of the core 410 is approximately 1 μm, the thickness X1 of the shell 420 can be equal to or greater than approximately 1 μm. When the thickness X1 of the shell 420 is approximately 0.1 μm, the surface of the shell 420 may not be spherical. The target thermal conductivity of the first filler 400 (e.g., equal to or greater than about 1000 W / m·K) can be achieved with a value equal to or less than the upper limit of the volume of the shell 420 and the upper limit of the thickness X1 of the shell 420.

[0065] Table 1 below shows various inorganic materials and their thermal conductivity. Figure 5 This is a conceptual image illustrating the flowability of a first polymer resin surrounding a first filler.

[0066] [Table 1]

[0067] Referring to Table 1 above, it can be seen that the thermal conductivity of diamond is approximately ten to one hundred times that of other inorganic materials. When diamond particles are used as fillers, the semiconductor package structure MD can have improved thermal conductivity to rapidly dissipate the heat of the semiconductor chip 100 to the outside. According to the present invention, because the shell is spherical, when the molten semiconductor package composition covers (fills) the upper surface of the package substrate 200, the first polymer resin can have better flowability in the presence of the shell than in the absence of the shell. When the filler is used in a state with only diamond particles and no shell, the sides of the diamond particles with polygonal shapes may interfere with the movement of the first polymer resin during the filling of the semiconductor package composition. In this case, areas of unfilled semiconductor package composition may occur, and thus voids may occur in the semiconductor package structure MD.

[0068] In another embodiment of the invention, the shell may comprise a high-heat-dissipating inorganic material with high thermal conductivity. The thermal conductivity of alumina, magnesium oxide, aluminum nitride, and boron nitride may be at least ten times that of silicon dioxide, lead glass, and zinc glass, which are inorganic materials according to comparative examples. A shell with higher thermal conductivity can rapidly transfer heat to the core.

[0069] For example, diamond particles can be used as the core, and alumina can be used as the shell. In this case, when the volume ratio of the shell to the core in the first filler becomes larger, the thermal conductivity of the first filler can be reduced. Because the inorganic material used in the shell has a lower thermal conductivity than the diamond core, the thermal conductivity of the first filler can be determined by the thickness of the shell. As mentioned above... Figure 4A and Figure 4B As described, the shell thickness can be equal to or greater than approximately 1 μm and approximately 1 / 10 of the core diameter, or the shell thickness can be equal to or greater than approximately 1.2 μm and between 1 / 11 and 1 / 9 of the core diameter. There exists a minimum shell thickness such that the shell surface is spherical, but the shell thickness can be controlled to be equal to or less than a specific thickness or a specific volume, thereby giving the first filler high thermal conductivity. For example, the shell thickness can be controlled taking into account the thermal conductivity and sphericity of the first filler.

[0070] Figure 6 It is a graph showing the thermal conductivity of the semiconductor package structure formed according to Comparative Example 1, Comparative Example 2, Comparative Example 3 and Example 1.

[0071] [Example 1: E1] Semiconductor packaging structures are formed by curing a semiconductor packaging composition comprising a high heat dissipation resin (such as a polymer resin) and a diamond core-alumina shell (filler).

[0072] [Comparative Example 1: C1] A semiconductor package structure is formed by curing a semiconductor package composition comprising a normal resin (i.e., a second polymer resin) and alumina balls (filler).

[0073] [Comparative Example 2: C2] A semiconductor package structure is formed by curing a semiconductor packaging composition comprising a high heat dissipation resin and alumina balls (filler).

[0074] [Comparative Example 3: C3] Semiconductor packaging structures are formed by curing a semiconductor packaging composition comprising a common resin and a diamond core-alumina shell (filler).

[0075] refer to Figure 6 When the filler content is low (e.g., approximately 60 vol% to approximately 65 vol%), the difference in thermal conductivity between Example 1 and Comparative Examples 1 to 3 is small. However, as the filler content increases, the difference in thermal conductivity increases significantly with both the filler content and the type of filler. In particular, it can be seen that the difference in thermal conductivity increases significantly at filler volume ratios of approximately 70 vol% to approximately 80 vol%. Furthermore, it can be seen that after matrix formation, the difference in thermal conductivity between the high-heat-dissipating resin and the ordinary resin is large. It can be confirmed that Example 1 has a thermal conductivity improvement effect of approximately 30% to approximately 100% compared to Comparative Examples 1 to 3.

[0076] Figure 7 This is a graph showing the thermal conductivity of a semiconductor package structure using particles of a first filler and a second filler together. A diamond core-alumina shell is used as the first filler, and alumina spheres are used as the second filler.

[0077] refer to Figure 7 It can be seen that thermal conductivity increases as the first filler fraction (X-axis) (e.g., mass ratio) increases. In particular, it can be seen that the increase in thermal conductivity according to the first filler fraction (X-axis) is significant when the volume ratio of the mixed filler in the semiconductor package structure increases from approximately 70 vol% to approximately 80 vol%.

[0078] Figure 8 This is a diagram illustrating a semiconductor package according to some embodiments. Repeated descriptions of the above will be omitted except as provided below.

[0079] Semiconductor package 1100 may include a plurality of semiconductor chips 100 and 500. A stack of semiconductor chips 100 and 500 is shown, but according to some embodiments, the semiconductor chips 100 and 500 may be arranged horizontally. Package substrate 200 may include a first upper substrate pad 220 and a second upper substrate pad 230. The first upper substrate pad 220 and the second upper substrate pad 230 may be electrically connected to the first semiconductor chip 100 and the second semiconductor chip 500, respectively, via corresponding bonding lines 800. Items described herein as “electrically connected” are configured to allow electrical signals to be transmitted from one item to another. Adhesive layer 700 may be disposed between semiconductor chip 100 and package substrate 200, and between semiconductor chip 100 and second semiconductor chip 500. Semiconductor package structure MD may cover the side surfaces of bonding lines 800.

[0080] As described above, because the semiconductor packaging composition includes a first filler, the high-heat-dissipation resin can have sufficient flowability during the process of the semiconductor packaging composition covering the bonding lines 800 and filling the spaces between them. Furthermore, because the semiconductor package structure MD includes the first filler and a matrix formed of the high-heat-dissipation resin, the heat generated by the multiple semiconductor chips can be effectively dissipated to its exterior.

[0081] According to the present invention, semiconductor packaging compositions and semiconductor packaging structures may include fillers comprising a diamond core and an inorganic material shell. While polygonal diamond fillers can reduce the flowability of the semiconductor packaging composition, core-shell fillers surrounded by an inorganic material shell with a spherical surface can improve the flowability and fillability of the semiconductor packaging composition, thereby increasing the reliability of the semiconductor package. The diamond core can improve heat dissipation of the semiconductor packaging structure due to its excellent thermal conductivity, and can also improve the performance of the semiconductor package.

[0082] While embodiments of the present invention have been described, it should be understood that the invention is not limited to these embodiments, and various changes and modifications can be made by those skilled in the art within the spirit and scope of this application. Therefore, it should be understood that the above embodiments are exemplary in all respects, and the invention is not limited thereto.

Claims

1. A semiconductor packaging composition, the semiconductor packaging composition comprising: High heat dissipation resin; Curing agent; as well as The first filler comprises a plurality of particles, each particle having a diamond particle core and a shell surrounding the diamond particle core, wherein the shell comprises at least one material selected from the group consisting of alumina, magnesium oxide, aluminum nitride and boron nitride.

2. The semiconductor packaging composition according to claim 1, wherein, The surface of the shell is spherical.

3. The semiconductor packaging composition according to claim 1, wherein, The high heat dissipation resin has polyarylate units and includes at least one of Formula 1 or Formula 2: [Formula 1] [Equation 2] 。 4. The semiconductor packaging composition according to claim 3, wherein, The polyarylate unit includes one of formulas 3A to 3H, and In formula 3H, R is one of hydrogen (H), chlorine (Cl), or methyl (CH3): [Formula 3A] [Formula 3B] [Formula 3C] [3D Style] [Formula 3E] [Formula 3F] [Type 3G] [Formula 3H] 。 5. The semiconductor packaging composition according to claim 1, further comprising a second filler. in, The particles of the second filler include alumina balls, magnesium oxide balls, aluminum nitride balls, or boron nitride balls.

6. The semiconductor packaging composition according to claim 5, wherein, The proportion of the first filler is greater than the proportion of the second filler relative to the total amount of the semiconductor packaging composition.

7. The semiconductor packaging composition according to claim 1, wherein, The semiconductor packaging composition comprises 1 wt% to 93 wt% of the first filler relative to the total amount of the semiconductor packaging composition.

8. The semiconductor packaging composition according to claim 1, wherein, The semiconductor packaging composition comprises 2 wt% to 10 wt% of the high heat dissipation resin relative to the total amount of the semiconductor packaging composition.

9. The semiconductor packaging composition according to claim 1, wherein, The curing agent includes anhydride groups, and The semiconductor packaging composition comprises 2 wt% to 10 wt% of the curing agent relative to the total amount of the semiconductor packaging composition.

10. The semiconductor packaging composition of claim 1, further comprising additives, in, The additive includes at least one additive selected from the group consisting of curing rate modifiers, coupling agents, and adhesive polymers. The semiconductor packaging composition comprises 0 wt% to 5 wt% of the additive relative to the total amount of the semiconductor packaging composition.

11. A semiconductor packaging composition, the semiconductor packaging composition comprising: High heat dissipation resin; Curing agent; as well as The first filler comprises a plurality of particles, each particle having a diamond core and a shell surrounding the diamond core, wherein the shell comprises a highly heat-dissipating inorganic material, and The thickness of the shell is equal to or greater than 1 / 10 of the diameter of the diamond particle core, and equal to or greater than 1 μm.

12. The semiconductor packaging composition of claim 11, wherein, The high heat dissipation resin has polyarylate units and includes at least one of Formula 1 or Formula 2: [Formula 1] [Equation 2] ， The polyarylate unit includes one of formulas 3A to 3H, and In formula 3H, R is one of hydrogen (H), chlorine (Cl), or methyl (CH3): [Formula 3A] [Formula 3B] [Formula 3C] [3D Style] [Formula 3E] [Formula 3F] [Type 3G] [Formula 3H] 。 13. The semiconductor packaging composition according to claim 11, wherein, The shell is spherical, and The radius of the shell is greater than the maximum radius of the diamond particle core.

14. The semiconductor packaging composition of claim 11, wherein, The volume of the shell is equal to or greater than 33% of the volume of the first filler.

15. The semiconductor packaging composition of claim 11, further comprising a second filler. in, The particles of the second filler include highly heat-dissipating inorganic materials.

16. A semiconductor package, the semiconductor package comprising: Packaging substrate; A semiconductor chip, wherein the semiconductor chip is located on the packaging substrate; as well as A semiconductor packaging composition that covers the semiconductor chip. The semiconductor packaging composition comprises: a polymer matrix and a first filler dispersed in the polymer matrix, and The first filler comprises a plurality of particles, each particle having a diamond core and a shell surrounding the diamond core, wherein the shell comprises at least one material selected from the group consisting of alumina, magnesium oxide, aluminum nitride and boron nitride.

17. The semiconductor package of claim 16, wherein, The polymer matrix has a three-dimensional network structure including ester bonds.

18. The semiconductor package of claim 16, wherein, The thickness of the shell is equal to or greater than 1 / 10 of the diameter of the diamond particle core.

19. The semiconductor package of claim 16, wherein, The thickness of the shell is equal to or greater than 1 μm.

20. The semiconductor package of claim 16, further comprising a second filler dispersed in the polymer matrix. in, The particles of the second filler include alumina balls, magnesium oxide balls, aluminum nitride balls, or boron nitride balls.

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