1-bit trans / reflective all-in-one phase modulation metasurface with polarization reconfigurability

Abstract

This invention discloses a 1-bit transparent / reverse phase-controlled metasurface with polarization reconfigurability, comprising three active layers and three dielectric layers. The three active layers are all FSS structures made of PEC metal, and the three dielectric layers are all made of Rogers RO3003 material. The three active layers and the three dielectric layers are stacked alternately. From top to bottom, the three active layers are an energy receiving layer, a function control layer, and a radiation selection layer. Each layer is loaded with a PIN diode. By controlling the conduction and cutoff states of the PIN diodes in each layer, multi-mode function switching is achieved. This invention uses a current reverse path to achieve a 180° phase difference, while the traditional method of using varactor diodes to achieve phase difference sacrifices transmission insertion loss. This invention does not sacrifice insertion loss and can maintain low and stable insertion loss over a wide bandwidth, while simultaneously achieving precise 1-bit phase reversal.

Description

Technical Field

[0001] This invention belongs to the field of electromagnetic wave modulation technology, and in particular relates to a 1-bit transparent / reverse integrated phase-modulated metasurface with polarization reconfigurable characteristics. Background Technology

[0002] In recent years, reconfigurable metasurfaces have made significant progress in the field of electromagnetic wave full-space manipulation. To achieve dynamic phase modulation, researchers often use active components such as PIN diodes or varactors. Existing technologies mostly employ active modulation methods using varactors, achieving phase adjustment by continuously changing the capacitance value, which has attracted attention in applications seeking multi-bit or continuous phase scanning. However, these capacitive tuning-based methods typically face an inherent challenge: phase changes are often accompanied by resonant frequency shifts. This results in a narrow operating bandwidth for generating phase differences and low transmission efficiency, making it difficult to simultaneously achieve stable phase differences and low-loss performance over a wide bandwidth.

[0003] Against this backdrop, most existing research remains limited to single-polarization operation, where reflection and transmission channels are functionally isolated through frequency or polarization separation. This approach relies on different polarizations (e.g., x-polarized reflection, y-polarized transmission) or different frequency bands to distinguish between reflection and transmission channels. While this simplifies unit design, it also limits application scenarios. Receivers in this type of design must be equipped with dual-polarized antennas or dual-band systems, increasing system complexity and limiting its application potential in modern communication systems that prioritize hardware simplification and efficient spectrum utilization.

[0004] Therefore, in view of the shortcomings of existing varactor tube phase modulation methods in terms of bandwidth and loss stability, as well as the limitations of all-space metasurfaces in polarization processing modes, exploring a new dynamic control mechanism that can achieve broadband, low insertion loss and stable phase state at the same frequency and polarization has become an important and urgently needed research direction in this field. Summary of the Invention

[0005] Purpose of the Invention: The purpose of this invention is to provide a 1-bit transmit / reflection integrated phase-controlled metasurface with polarization reconfigurability. It aims to solve the following technical problems: 1. Most current reconfigurable phase metasurfaces have high insertion losses; 2. Most current 1-bit reconfigurable metasurfaces only have transmission-type or reflection-type polarization conversion functions, which cannot be implemented on the same metasurface; 3. Most current 1-bit reconfigurable metasurfaces achieve polarization conversion through the Fabry-Perot cavity (FP) resonance principle, thereby destroying the common polarization performance.

[0006] Technical solution: The present invention provides a 1-bit transparent / reverse phase-controlled metasurface with polarization reconfigurable characteristics, comprising three active structures and three dielectric layers. The three active structures are all FSS structures of PEC metal material, and the three active structures and the three dielectric layers are stacked alternately.

[0007] The three-layer active structure consists of an energy receiving layer, a function control layer, and a radiation selection layer from top to bottom. Each layer is loaded with a PIN diode. By controlling the on and off states of the PIN diodes in each layer, multi-mode function switching can be achieved.

[0008] The energy receiving layer has PIN diodes arranged in mutually orthogonal directions on both sides for independently controlling the incident of horizontally polarized TM waves or vertically polarized TE waves.

[0009] The functional control layer consists of two metal strips with orthogonally loaded PIN diodes, used to realize 1-bit phase difference polarization conversion or common polarization coupling function;

[0010] The structure and function of the radiation selection layer are the same as those of the energy receiving layer, and it is used to independently control the radiation of horizontally polarized TM waves or vertically polarized TE waves.

[0011] Furthermore, the multi-mode function switching specifically includes 10 working modes, namely:

[0012] Mode A: The top diode of the energy receiving layer is OFF and the bottom diode is ON; the top diode of the function control layer is ON and the bottom diode is ON; the top diode of the radiation selection layer is ON and the bottom diode is OFF, realizing TE wave transmission and TM wave shielding.

[0013] Mode B: The top diode of the energy receiving layer is ON and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is ON; the top diode of the radiation selection layer is OFF and the bottom diode is ON, thus achieving TE wave shielding and TM wave transmission.

[0014] Mode C: The top diode of the energy receiving layer is OFF and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is ON; the top diode of the radiation selection layer is OFF and the bottom diode is OFF, realizing TE wave transmission and TM wave transmission.

[0015] Mode D: The top diode of the energy receiving layer is OFF and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is ON; the top diode of the radiation selection layer is ON and the bottom diode is ON, thus achieving TE wave shielding and TM wave shielding.

[0016] Mode E: The top diode of the energy receiving layer is OFF and the bottom diode is ON; the top diode of the function control layer is ON and the bottom diode is OFF; the top diode of the radiation selection layer is OFF and the bottom diode is ON, realizing TE to TM transmission phase 0° and TM wave shielding.

[0017] Mode F: Top diode OFF and bottom diode ON in the energy receiving layer; top diode OFF and bottom diode ON in the function control layer; top diode OFF and bottom diode ON in the radiation selection layer, achieving TE to TM transmission phase 180° and TM wave shielding.

[0018] Mode G: The top diode of the energy receiving layer is ON and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is OFF; the top diode of the radiation selection layer is ON and the bottom diode is OFF, achieving TE wave shielding and TM to TE transmission phase 0°.

[0019] Mode H: The top diode of the energy receiving layer is ON and the bottom diode is OFF; the top diode of the function control layer is OFF and the bottom diode is ON; the top diode of the radiation selection layer is ON and the bottom diode is OFF, realizing TE wave shielding and TM to TE transmission phase 180°.

[0020] Mode I: The top diode of the energy receiving layer is OFF and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is OFF; the top diode of the radiation selection layer is ON and the bottom diode is ON, achieving a 0° phase of the reflection polarization conversion.

[0021] Mode J: The top diode of the energy receiving layer is OFF and the bottom diode is OFF; the top diode of the function control layer is OFF and the bottom diode is ON; the top diode of the radiation selection layer is ON and the bottom diode is ON, achieving a 180° phase conversion of the reflection polarization.

[0022] Furthermore, the metasurfaces are arranged periodically along the +y and +x directions, with the following specific physical parameters: metasurface unit size P = 12 ± 0.05 mm, side length of the square aperture in the cross-shaped patch structure of the energy receiving layer a = 3 ± 0.05 mm, gap between adjacent cross-shaped patch structures of the energy receiving layer b = 0.2 ± 0.05 mm, width of the cross-shaped patch structure of the energy receiving layer c = 2.6 ± 0.05 mm, gap between diode pads of the energy receiving layer d = 1.2 ± 0.05 mm, gap between diode pads of the functional control layer e = 1.2 ± 0.05 mm, width of the inclined metal strip of the functional control layer f = 0.1 ± 0.05 mm, width of diode pads of the functional control layer g = 1 ± 0.05 mm, dielectric thickness of the energy receiving layer, functional control layer, and radiation selection layer h = 0.5 ± 0.1 mm, and air gap between the energy receiving layer and the functional control layer, and between the functional control layer and the radiation selection layer hair = 6 ± 0.1 mm.

[0023] Furthermore, the functional control layer selectively excites metal strips on different layers by switching the on / off states of the PIN diodes on both sides of the functional control layer. The current directions of the excited metal strips are opposite in the two states, thereby generating a 180° phase difference.

[0024] Furthermore, the grating structure response characteristics of the energy receiving layer and radiation selection layer are highly polarization dependent. The electric dipole resonance is effectively excited by an electric field parallel to the grating direction, resulting in total reflection of electromagnetic waves. An electric field perpendicular to the grating direction cannot excite resonance, and the structure exhibits a transmission state.

[0025] Furthermore, the operating frequency band of the metasurface is: 1.4GHz to 2.9GHz to achieve dual-polarization independent transmission and reflection reconfigurable function; 1.35GHz to 2.85GHz to achieve dual-polarization transmission polarization conversion function and dual-polarization reflection polarization conversion function, and achieve 1-bit phase reconfigurability.

[0026] Furthermore, when both the positive and negative PIN diodes are turned on, the three-layer active structure generates CLC resonance, forming a second-order filter passband to achieve common-polarization transmission or reflection; when the positive and negative PIN diodes are turned on and off respectively, the three-layer active structure forms an FP resonant cavity to achieve polarization conversion function.

[0027] Furthermore, all three dielectric layers are made of Rogers RO3003 material.

[0028] The present invention provides a 1-bit transparent / reflective integrated phase-controlled metasurface with polarization reconfigurability, which can be applied to 6G communication, integrated sensing and communication scenarios.

[0029] Beneficial effects: Compared with the prior art, the present invention has the following significant advantages:

[0030] 1. This invention uses a current reverse path to achieve a 180° phase difference, while the traditional method of using a varactor tube to achieve a phase difference sacrifices transmission insertion loss. This invention does not sacrifice insertion loss and can maintain low and stable insertion loss over a wide bandwidth, while achieving precise 1-bit phase reversal.

[0031] 2. This invention, by incorporating a 1-bit polarization conversion phase difference, can simultaneously achieve common polarization transmission and reflection switching. In contrast, traditional 1-bit polarization conversion metasurfaces cannot simultaneously achieve common polarization transmission and polarization conversion transmission, and it is difficult to change the polarization characteristics of transmitted waves within their passband.

[0032] 3. This invention has a total of 10 modes. It can achieve independent dual-polarization control for common-polarization transmission and reflection. The polarization conversion function with a 1-bit phase difference is dual-polarization, while the traditional 1-bit polarization conversion metasurface using a grating structure can only achieve single-polarization.

[0033] 4. The common polarization transmission, common polarization reflection, polarization conversion transmission and polarization conversion reflection passbands are kept at the same passband position in the present invention, while similar designs reported in the past cannot achieve such polarization control function. Attached Figure Description

[0034] Figure 1 : A schematic diagram of the overall design structure of the 1-bit transparent-reflective integrated phase-controlled metasurface with polarization reconfigurability of the present invention;

[0035] Figure 2 : Schematic diagram of the front structure of the first layer (energy receiving layer) and the back structure of the third layer (radiation selection layer) of this invention;

[0036] Figure 3 : Schematic diagram of the back structure of the first layer (energy receiving layer) and the front structure of the third layer (radiation selection layer) of this invention;

[0037] Figure 4 : A schematic diagram of the front structure of the intermediate layer (functional control layer) of this invention;

[0038] Figure 5 : A schematic diagram of the reverse side structure of the intermediate layer (functional control layer) of this invention;

[0039] Figure 6 : Front view of the metasurface unit structure of this invention;

[0040] Figure 7 Polarization conversion current diagram of the intermediate layer (functional control layer) of this invention;

[0041] Figure 8The present invention presents polarization wave transmission characteristic diagrams under four working modes A, B, C and D, where (a) represents TE wave transmission and TM wave shielding under mode A, (b) represents TE wave shielding and TM wave transmission under mode B, (c) represents TE wave transmission and TM wave transmission under mode C, and (d) represents TE wave shielding and TM wave shielding under mode D.

[0042] Figure 9 The S-parameter diagrams of the present invention under the E and F working modes are shown in the following diagrams: (a) is the incident TE wave to TM wave transmission phase of 0° and TM wave shielding under the E mode; (b) is the incident TE wave to TM wave transmission phase of 180° and TM wave shielding under the F mode; and (c) is the phase difference between the incident TE wave to TM wave transmission under the E and F modes.

[0043] Figure 10 The present invention provides S-parameter diagrams for the two working modes G and H, where (a) is the incident TM wave to TE wave transmission phase of 0° and TE wave shielding in mode G, (b) is the incident TM wave to TE wave transmission phase of 180° and TE wave shielding in mode H, and (c) is the phase difference between the incident TM wave to TE wave transmission in modes G and H.

[0044] Figure 11 The polarization wave reflection characteristics of the present invention under the two working modes I and J are shown in the figure. (a) is the polarization conversion phase of the dual-polarization reflection type in mode I, which is 0°. (b) is the polarization conversion phase of the dual-polarization reflection type in mode J, which is 180°. (c) is the phase difference of the reflection type polarization conversion between modes I and J. Detailed Implementation

[0045] The technical solution of the present invention will be further described below with reference to the accompanying drawings.

[0046] This embodiment provides a 1-bit transparent / reverse phase-tunable metasurface with polarization reconfigurable characteristics, the structure of which is as follows: Figure 1 As shown, it is periodically arranged along the +y (TE) and +x (TM) directions, consisting of a six-layer PEC metal material FSS structure (three-layer active structure) and three Rogers RO3003 material dielectric layers, with the three-layer active structure and the three-layer dielectric layers stacked alternately.

[0047] Figure 1 This is a schematic diagram of the overall design structure. Figure 2 The structure consists of a first layer (energy receiving layer) front structure and a third layer (radiation selection layer) back structure. Figure 3 It consists of a first-layer back structure and a third-layer front structure. Figure 4 This is the front structure of the intermediate layer (functional control layer). Figure 5 It is a reverse structure of the middle layer. Figure 6 This is the main view of the unit structure.

[0048] The energy receiving layer has PIN diodes arranged in mutually orthogonal directions on both sides. By controlling the conduction and cutoff of the PIN diodes, the metasurface can realize gratings or all-metal patches with different orientations. The response characteristics of this grating structure are highly polarization-dependent: its electric dipole resonance is effectively excited by an electric field parallel to the grating direction, thus producing total reflection of electromagnetic waves; conversely, for an electric field perpendicular to the grating direction, the resonance cannot be excited, and the structure exhibits a transmission state. Therefore, by controlling the orthogonally loaded PIN diodes on the energy receiving layer, independent transmission or reflection functions of TE and TM waves can be achieved.

[0049] The functional control layer consists of two metal strips with orthogonally loaded PIN diodes. When both PIN diodes on the front and back of the dielectric are in the conducting state, the three-layer active structure generates CLC resonance, forming a second-order filter passband to achieve the same polarization transmission or reflection effect. When the PIN diodes on the front and back of the dielectric are in the conducting and cut-off states respectively, the three-layer active structure forms an FP resonant cavity, thereby realizing the polarization conversion function. Moreover, the current conduction direction is opposite in the two states, which can introduce a 1-bit phase difference. Figure 7 The polarization conversion current diagram of the intermediate layer clearly shows the current distribution under different diode states, and clarifies the generation mechanism of the 180° phase difference: by switching the on / off state of the top and bottom diodes, the metal strips on different layers are selectively excited. The current direction on the excited metal strips is opposite in the two states. Due to the different current paths, a 180° phase difference is generated.

[0050] The structural design and functional implementation of the radiation selection layer are similar to those of the energy receiving layer, and it is used to independently control the radiation of horizontally polarized waves or vertically polarized waves.

[0051] By controlling the on / off states of the PIN diodes in each layer, this metasurface can achieve 10 operating modes, and the specific performance of each mode is as follows:

[0052] Figure 8The polarization wave transmission characteristics of the structure are demonstrated in four operating modes: A, B, C, and D. In mode A, the top-layer diodes of the first layer and the bottom-layer diodes of the third layer are off, while the bottom-layer diodes of the first layer and the top-layer diodes of the third layer are on. All diodes in the middle layer are on. In this mode, TE waves can pass through the structure within the operating frequency band, while TM waves are totally reflected. Mode B reverses the on / off states of the diodes in the first and third layers, and its electromagnetic response is also reversed accordingly; TM waves can pass through, while TE waves are totally reflected. In mode C, all diodes in the first and third layers are off, while the middle layer remains on. In this mode, the structure exhibits transmission characteristics for both TE and TM waves. In mode D, all diodes in the first layer are off, all diodes in the third layer are on, and the middle layer remains on. In this mode, the third-layer FSS is equivalent to a metal ground plane, shielding electromagnetic waves, and all polarized incident waves are reflected. The transmission operating frequency bands of the above four modes are 1.4GHz to 2.9GHz, and the transmission efficiency is as high as 98% at 1.8GHz to 2.55GHz; the reflection operating bandwidth is as high as 200%, and the reflection efficiency is as high as 95%.

[0053] Figure 9 For the S-parameters in E and F operating modes, the incident TE wave is converted into a TM wave and transmitted, while the TM wave is shielded. In E mode, the front diodes of the first and third layers are off, while the back diodes of the first and third layers are on. The diodes on both sides of the middle layer are in the on and off states. The first and third layers form a mutually orthogonal grating structure, ensuring that the polarization directions of the electromagnetic waves passing through the two layers are perpendicular to each other. A metal strip in the middle layer is in the off state, forming an FP cavity with the other two layers to achieve broadband polarization conversion. In F mode, the diode states of the first and third layers are the same as in E mode, but the on-off states of the diodes in the middle layer are completely opposite. Its equivalent current path is mirror-symmetrical with that of E mode, resulting in a stable 180° phase difference between the TE to TM polarization conversion transmission coefficients in E mode and F mode.

[0054] Figure 10 The S-parameter response in G and H operating modes is demonstrated. The incident TM wave is converted into a TE wave and transmitted, while the TE wave is shielded. In G mode, the front diodes of the first and third layers are on, the back diodes are off, and the middle layer diode is in a conduction-off state, forming an orthogonal grating configuration. The broken metal strip in the middle layer, together with the upper and lower layers, forms an FP resonant cavity, supporting the broadband polarization conversion function. In H mode, the configuration of the first and third layers remains unchanged, but the conduction-off state of the middle layer diode is reversed, making its current path mirror symmetrical with that of G mode, introducing a 180° phase difference in the TM to TE conversion channel.

[0055] Figure 11The polarization wave reflection characteristics under I and J operating modes are demonstrated. In I mode, all diodes in the first layer are in the off state, making them transparent to electromagnetic waves; all diodes in the third layer are in the on state, equivalent to a metal reflector; the diodes in the middle layer are in an on-off configuration. The three layers together form a reflective polarization conversion surface, converting the incident specific polarization wave into an orthogonal polarization wave for reflection. In J mode, the bias states of the first and third layers remain unchanged, while the on-off state of the middle layer diodes is reversed, making its equivalent current distribution mirror-symmetrical with that of I mode, establishing a stable 180° phase difference between the reflection coefficients of I and J modes.

[0056] In this embodiment, the specific physical parameters (unit: mm) of the metasurface are determined through simulation fitting and optimization, specifically: P=12, a=3, b=0.2, c=2.6, d=1.2, e=1.2, f=0.1, g=1, h=0.5, Hair=6.

[0057] The above embodiments are merely preferred embodiments of the present invention. It should be noted that those skilled in the art can make several improvements and equivalent substitutions without departing from the principle of the present invention. All such improvements and equivalent substitutions to the claims of the present invention fall within the protection scope of the present invention.

Claims

1. A 1-bit transparent / reflective integrated phase-tunable metasurface with polarization reconfigurability, characterized in that, It includes a three-layer active structure and a three-layer dielectric layer. The three-layer active structure is an FSS structure of PEC metal material. The three-layer active structure and the three-layer dielectric layer are stacked alternately. The three-layer active structure consists of an energy receiving layer, a function control layer, and a radiation selection layer from top to bottom. Each layer is loaded with a PIN diode. By controlling the on and off states of the PIN diodes in each layer, multi-mode function switching can be achieved. The energy receiving layer has PIN diodes arranged in mutually orthogonal directions on both sides for independently controlling the incident of horizontally polarized TM waves or vertically polarized TE waves. The functional control layer consists of two metal strips with orthogonally loaded PIN diodes, used to realize 1-bit phase difference polarization conversion or common polarization coupling function; The structure and function of the radiation selection layer are the same as those of the energy receiving layer, and it is used to independently control the radiation of horizontally polarized TM waves or vertically polarized TE waves.

2. The 1-bit transparent / reflective integrated phase-tunable metasurface with polarization reconfigurable characteristics according to claim 1, characterized in that, The multi-mode function switching specifically includes 10 working modes, namely: Mode A: The top diode of the energy receiving layer is OFF and the bottom diode is ON; the top diode of the function control layer is ON and the bottom diode is ON; the top diode of the radiation selection layer is ON and the bottom diode is OFF, realizing TE wave transmission and TM wave shielding. Mode B: The top diode of the energy receiving layer is ON and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is ON; the top diode of the radiation selection layer is OFF and the bottom diode is ON, thus achieving TE wave shielding and TM wave transmission. Mode C: The top diode of the energy receiving layer is OFF and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is ON; the top diode of the radiation selection layer is OFF and the bottom diode is OFF, realizing TE wave transmission and TM wave transmission. Mode D: The top diode of the energy receiving layer is OFF and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is ON; the top diode of the radiation selection layer is ON and the bottom diode is ON, thus achieving TE wave shielding and TM wave shielding. Mode E: The top diode of the energy receiving layer is OFF and the bottom diode is ON; the top diode of the function control layer is ON and the bottom diode is OFF; the top diode of the radiation selection layer is OFF and the bottom diode is ON, realizing TE to TM transmission phase 0° and TM wave shielding. Mode F: Top diode OFF and bottom diode ON in the energy receiving layer; top diode OFF and bottom diode ON in the function control layer; top diode OFF and bottom diode ON in the radiation selection layer, achieving TE to TM transmission phase 180° and TM wave shielding. Mode G: The top diode of the energy receiving layer is ON and the bottom diode is OFF; the top diode of the function control layer is ON and the bottom diode is OFF; the top diode of the radiation selection layer is ON and the bottom diode is OFF, achieving TE wave shielding and TM to TE transmission phase 0°. Mode H: The top diode of the energy receiving layer is ON and the bottom diode is OFF; the top diode of the function control layer is OFF and the bottom diode is ON; the top diode of the radiation selection layer is ON and the bottom diode is OFF, realizing TE wave shielding and TM to TE transmission phase 180°. Mode I: Energy receiving top diode OFF, bottom diode OFF, function control layer top diode ON, bottom diode OFF, radiation selection layer top diode ON, bottom diode ON, achieving 0° phase of reflection polarization conversion; Mode J: The top diode of the energy receiving layer is OFF and the bottom diode is OFF; the top diode of the function control layer is OFF and the bottom diode is ON; the top diode of the radiation selection layer is ON and the bottom diode is ON, achieving a 180° phase conversion of the reflection polarization.

3. The 1-bit transparent / reflective integrated phase-controlled metasurface with polarization reconfigurable characteristics according to claim 1, characterized in that, The metasurfaces are periodically arranged along the +y and +x directions. Specific physical parameters are as follows: metasurface unit size P = 12 ± 0.05 mm; side length of the square aperture in the cross-shaped patch structure of the energy receiver layer a = 3 ± 0.05 mm; gap between adjacent cross-shaped patch structures of the energy receiver layer b = 0.2 ± 0.05 mm; width of the cross-shaped patch structure of the energy receiver layer c = 2.6 ± 0.05 mm; gap between diode pads in the energy receiver layer d = 1.2 ± 0.05 mm; gap between diode pads in the functional control layer e = 1.2 ± 0.05 mm; width of the inclined metal strip in the functional control layer f = 0.1 ± 0.05 mm; width of diode pads in the functional control layer g = 1 ± 0.05 mm; dielectric thickness of the energy receiver layer, functional control layer, and radiation selection layer h = 0.5 ± 0.1 mm; air gap between the energy receiver layer and functional control layer, and between the functional control layer and radiation selection layer hair = 6 ± 0.1 mm.

4. The 1-bit transparent / reflective integrated phase-tunable metasurface with polarization reconfigurable characteristics according to claim 1, characterized in that, The functional control layer selectively excites metal strips on different layers by switching the on / off states of the PIN diodes on both sides of the functional control layer. The current directions of the excited metal strips are opposite in the two states, thus generating a 180° phase difference.

5. A 1-bit transparent / reflective integrated phase-controlled metasurface with polarization reconfigurable characteristics according to claim 1, characterized in that, The grating structure response characteristics of the energy receiving layer and radiation selection layer are highly polarization dependent. The electric dipole resonance is effectively excited by an electric field parallel to the grating direction, resulting in total internal reflection of electromagnetic waves. An electric field perpendicular to the grating direction cannot induce resonance, and the structure exhibits a transmission state.

6. A 1-bit transparent / reflective integrated phase-tunable metasurface with polarization reconfigurable characteristics according to claim 1, characterized in that, The operating frequency band of the metasurface is: 1.4GHz to 2.9GHz to achieve dual-polarization independent transmission and reflection reconfigurable function; 1.35GHz to 2.85GHz to achieve dual-polarization transmission polarization conversion function and dual-polarization reflection polarization conversion function, and achieve 1-bit phase reconfigurability.

7. A 1-bit transparent / reflective integrated phase-tunable metasurface with polarization reconfigurable characteristics according to claim 1, characterized in that, When both the positive and negative PIN diodes are turned on, the three-layer active structure generates CLC resonance, forming a second-order filter passband to achieve common-polarization transmission or reflection; when the positive and negative PIN diodes are turned on and off respectively, the three-layer active structure forms an FP resonant cavity to achieve polarization conversion function.

8. A 1-bit transparent / reflective integrated phase-controlled metasurface with polarization reconfigurable characteristics according to claim 1, characterized in that, All three dielectric layers are made of Rogers RO3003 material.

9. An application of a 1-bit transparent / reflective integrated phase-tunable metasurface with polarization reconfigurable characteristics as described in any one of claims 1-8, characterized in that, It is applied to 6G communication, integrated sensing and communication scenarios.

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