Balanced non-magnetic non-reciprocal bandpass filter with all-pass band linear phase characteristic

Abstract

This invention discloses a balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics, comprising: a balanced differential input port A, a balanced differential output port B, two sets of low-frequency group delay equalization circuits, two sets of high-frequency group delay equalization circuits, four half-wavelength open-circuit transmission lines, two full-wavelength ring resonant microstrip lines, two time-modulated resonant microstrip lines, four varactor diodes, two feed microstrip lines, and two power supplies. This balanced, non-magnetic, non-reciprocal filter achieves full-passband linear phase characteristics by adding low-frequency and high-frequency group delay equalization circuits at the balanced input and output ports, reducing phase distortion and thus lowering the system's bit error rate and improving signal integrity. Utilizing the different resonant frequencies of the ring resonant microstrip lines under common-mode and differential-mode signal excitation, excellent common-mode rejection is achieved, improving the circuit's electromagnetic compatibility characteristics.

Description

Technical Field

[0001] This invention relates to a balanced bandpass filter, specifically a balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics. Background Technology

[0002] Non-reciprocal devices are used to achieve unidirectional signal transmission and play an important role in many microwave wireless applications. Compared with traditional magnetic non-reciprocal implementations based on magnetic materials, non-magnetic non-reciprocal devices have advantages such as significantly reduced device size, easier integration with semiconductor processes, and easier combination with other electronic components to achieve composite functions, thus attracting widespread attention. Non-magnetic non-reciprocal technology based on time-modulated resonators inherently integrates non-reciprocity and filtering functions. Research on the working principle analysis, circuit topology improvement, and functional expansion of this technology has been extensively reported in recent years. The effectiveness of these designs has been verified by comparing the amplitude-frequency characteristics of simulation results with prototype measurement results. However, these studies generally lack analysis of phase-frequency characteristics, and high-quality signal transmission requires not only flat amplitude-frequency characteristics but also full-passband linear phase characteristics.

[0003] With the rapid development of modern communication technology, various devices operate in increasingly complex electromagnetic environments. To achieve high-quality signal transmission, circuits must possess strong anti-interference capabilities against various noises, electromagnetic interference, and signal crosstalk in these complex environments. Therefore, balanced circuits are increasingly favored in modern communication systems. Compared to single-ended circuits, balanced circuits transmit differential signals, effectively suppressing common-mode noise, improving the signal-to-noise ratio and electromagnetic compatibility; simultaneously, they reduce signal distortion and timing jitter, providing a higher dynamic range, offering significant advantages in high-speed, high-reliability communication.

[0004] Existing non-reciprocal bandpass filter designs based on time-modulated resonators lack analysis of their phase characteristics, while balanced circuit designs are more advantageous in modern communication systems. Building upon existing reports on time-modulated resonators, a balanced non-reciprocal bandpass filter design with full-passband linear phase characteristics further achieves this characteristic. This helps avoid inter-symbol interference caused by phase distortion during signal transmission in balanced non-reciprocal bandpass filters, thereby reducing the system's bit error rate and enhancing signal integrity in balanced RF circuits. Therefore, it is indeed necessary to propose a balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics. Summary of the Invention

[0005] Based on this, and to address the shortcomings of existing technologies, a balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics is proposed.

[0006] Includes: a balanced differential input port A, a balanced differential output port B, two sets of low-frequency group delay equalization circuits, two sets of high-frequency group delay equalization circuits, four half-wavelength open-circuit transmission lines, two full-wavelength ring resonant microstrip lines, two time-modulated resonant microstrip lines, four varactor diodes, two feed microstrip lines, and two power supplies. The balanced differential input port A includes input port A+ and input port A. ; The balanced differential output port B includes output port B+ and output port B. ; The two sets of low-frequency group delay equalization circuits include a first low-frequency group delay equalization circuit and a second low-frequency group delay equalization circuit; wherein the first low-frequency group delay equalization circuit is connected to the connection between input port A+ and the first open-circuit transmission line; the second low-frequency group delay equalization circuit is connected to input port A+. Connection point with the third open transmission line; The first low-frequency group delay equalization circuit and the second low-frequency group delay equalization circuit have the same structure. The first low-frequency group delay equalization circuit includes a low-frequency negative group delay parallel coupling line, a low-frequency negative group delay open line, and a low-frequency negative group delay absorption resistor. The low-frequency negative group delay parallel coupling line includes a low-frequency resistor-loaded microstrip line and a low-frequency open line-loaded microstrip line. The A port of the low-frequency negative group delay parallel coupling line is grounded, the B port of the low-frequency negative group delay parallel coupling line is connected to the connection between the input port A+ and the first open transmission line, the C port of the low-frequency negative group delay parallel coupling line is connected to the low-frequency negative group delay absorption resistor, and the D port of the low-frequency negative group delay parallel coupling line is connected to the low-frequency negative group delay open line. One end of the low-frequency negative group delay open line is connected to the D port of the low-frequency negative group delay parallel coupling line, and the other end is open. One end of the low-frequency negative group delay absorption resistor is connected to the C port of the low-frequency negative group delay parallel coupling line, and the other end is grounded. The two sets of high-frequency group delay equalization circuits include a first high-frequency group delay equalization circuit and a second high-frequency group delay equalization circuit; wherein the first high-frequency group delay equalization circuit is connected to the connection between the output port B+ and the second open-circuit transmission line; the second high-frequency group delay equalization circuit is connected to the output port B+. Connection point with the fourth open transmission line; The first and second high-frequency group delay equalization circuits have the same structure. The first high-frequency group delay equalization circuit includes a high-frequency negative group delay parallel coupling line, a high-frequency negative group delay open line, and a high-frequency negative group delay absorption resistor. The high-frequency negative group delay parallel coupling line includes a high-frequency resistor-loaded microstrip line and a high-frequency open line-loaded microstrip line. The A port of the high-frequency negative group delay parallel coupling line is grounded, the B port is connected to the connection between the output port B+ and the second open transmission line, the C port is connected to the high-frequency negative group delay absorption resistor, and the D port is connected to the high-frequency negative group delay open line. One end of the high-frequency negative group delay open line is connected to the D port of the high-frequency negative group delay parallel coupling line, and the other end is open. One end of the high-frequency negative group delay absorption resistor is connected to the C port of the high-frequency negative group delay parallel coupling line, and the other end is grounded. The four half-wavelength open-circuit transmission lines include a first open-circuit transmission line, a second open-circuit transmission line, a third open-circuit transmission line, and a fourth open-circuit transmission line; wherein the first open-circuit transmission line includes a first microstrip transmission line and a second microstrip transmission line; the second open-circuit transmission line includes a third microstrip transmission line and a fourth microstrip transmission line; the third open-circuit transmission line includes a fifth microstrip transmission line and a sixth microstrip transmission line; the fourth open-circuit transmission line includes a seventh microstrip transmission line and an eighth microstrip transmission line; one end of the first microstrip transmission line is connected to the connection between the input port A+ and the first low-frequency group delay equalization circuit, and the other end is connected to the second microstrip transmission line; one end of the second microstrip transmission line is connected to the first microstrip transmission line, and the other end is open-circuited; One end of the third microstrip transmission line is connected to the output port B+ at the connection point between the output port B+ and the first high-frequency group delay equalization circuit, and the other end is connected to the fourth microstrip transmission line; one end of the fourth microstrip transmission line is connected to the third microstrip transmission line, and the other end is open-circuited; one end of the fifth microstrip transmission line is connected to the input port A- at the connection point between the input port A- and the second low-frequency group delay equalization circuit, and the other end is connected to the sixth microstrip transmission line; one end of the sixth microstrip transmission line is connected to the fifth microstrip transmission line, and the other end is open-circuited; one end of the seventh microstrip transmission line is connected to the output port B- at the connection point between the output port B- and the second high-frequency group delay equalization circuit, and the other end is connected to the eighth microstrip transmission line; one end of the eighth microstrip transmission line is connected to the seventh microstrip transmission line, and the other end is open-circuited; The two full-wavelength ring resonant microstrip lines include a first full-wavelength ring resonant microstrip line and a second full-wavelength ring resonant microstrip line; wherein the first full-wavelength ring resonant microstrip line includes a first ring resonant microstrip line, a second ring resonant microstrip line, a third ring resonant microstrip line, a fourth ring resonant microstrip line, a fifth ring resonant microstrip line, and a sixth ring resonant microstrip line; the second full-wavelength ring resonant microstrip line includes a seventh ring resonant microstrip line, an eighth ring resonant microstrip line, a ninth ring resonant microstrip line, a tenth ring resonant microstrip line, an eleventh ring resonant microstrip line, and a twelfth ring resonant microstrip line; one end of the first ring resonant microstrip line is connected to the sixth ring resonant microstrip line, and the other end is connected to the second ring resonant microstrip line; one end of the second ring resonant microstrip line is connected to the first ring resonant microstrip line, and the other end is connected to the third ring resonant microstrip line; one end of the third ring resonant microstrip line is connected to the second ring resonant microstrip line, and the other end is grounded; one end of the fourth ring resonant microstrip line is connected to the fifth ring resonant microstrip line. The other end is grounded; one end of the fifth ring resonant microstrip line is connected to the fourth ring resonant microstrip line, and the other end is connected to the sixth ring resonant microstrip line; one end of the sixth ring resonant microstrip line is connected to the fifth ring resonant microstrip line, and the other end is connected to the first ring resonant microstrip line; one end of the seventh ring resonant microstrip line is connected to the twelfth ring resonant microstrip line, and the other end is connected to the eighth ring resonant microstrip line; one end of the eighth ring resonant microstrip line is connected to the seventh ring resonant microstrip line, and the other end is connected to the ninth ring resonant microstrip line; one end of the ninth ring resonant microstrip line is connected to the eighth ring resonant microstrip line, and the other end is grounded; one end of the tenth ring resonant microstrip line is connected to the eleventh ring resonant microstrip line, and the other end is grounded; one end of the eleventh ring resonant microstrip line is connected to the tenth ring resonant microstrip line, and the other end is connected to the twelfth ring resonant microstrip line; one end of the twelfth ring resonant microstrip line is connected to the eleventh ring resonant microstrip line, and the other end is connected to the seventh ring resonant microstrip line; The two time-modulated resonant microstrip lines include a first time-modulated resonant microstrip line and a second time-modulated resonant microstrip line; wherein the first time-modulated resonant microstrip line includes a first time-modulated coupled resonant microstrip line and a second time-modulated coupled resonant microstrip line; the second time-modulated resonant microstrip line includes a third time-modulated coupled resonant microstrip line and a fourth time-modulated coupled resonant microstrip line; one end of the first time-modulated coupled resonant microstrip line is connected to the cathode of the first varactor diode, and the other end is connected to the connection point between the second time-modulated coupled resonant microstrip line and the first feed microstrip line; the second time-modulated coupled resonant microstrip line includes a first ... the second time-modulated coupled resonant microstrip line includes a first time-modulated coupled resonant microstrip line and a fourth time-modulated coupled resonant microstrip line; the second time-modulated coupled resonant microstrip line includes a first time-modulated coupled resonant microstrip line and a fourth time-modulated coupled resonant microstrip line; the second time-modulated coupled resonant microstrip line includes a first time-modulated coupled resonant microstrip line and a fourth time-modulated coupled resonant microstrip line; the second time-modulated coupled resonant microstrip line includes a first time-modulated coupled resonant micros One end of the second time-modulated coupled resonant microstrip line is connected to the cathode of the second varactor diode, and the other end is connected to the connection between the first time-modulated coupled resonant microstrip line and the first feed microstrip line; one end of the third time-modulated coupled resonant microstrip line is connected to the cathode of the third varactor diode, and the other end is connected to the connection between the fourth time-modulated coupled resonant microstrip line and the second feed microstrip line; one end of the fourth time-modulated coupled resonant microstrip line is connected to the cathode of the fourth varactor diode, and the other end is connected to the connection between the third time-modulated coupled resonant microstrip line (161) and the second feed microstrip line; The four varactor diodes include a first varactor diode, a second varactor diode, a third varactor diode, and a fourth varactor diode; wherein the cathode of the first varactor diode is connected to a first time-modulated coupled resonant microstrip line, and the anode of the other end is grounded; the cathode of the second varactor diode is connected to a second time-modulated coupled resonant microstrip line, and the anode of the other end is grounded; the cathode of the third varactor diode is connected to a third time-modulated coupled resonant microstrip line, and the anode of the other end is grounded; the cathode of the fourth varactor diode is connected to a fourth time-modulated coupled resonant microstrip line, and the anode of the other end is grounded. The two-segment fed microstrip line includes a first fed microstrip line and a second fed microstrip line; wherein one end of the first fed microstrip line is connected to the connection point of the first time-modulated coupled resonant microstrip line and the second time-modulated coupled resonant microstrip line, and the other end is connected to the first power supply; one end of the second fed microstrip line is connected to the connection point of the third time-modulated coupled resonant microstrip line and the fourth time-modulated coupled resonant microstrip line, and the other end is connected to the second power supply; The two power supplies include a first power supply and a second power supply; wherein the first power supply is connected to a first feed microstrip line; and the second power supply is connected to a second feed microstrip line. The low-frequency open-circuit loaded microstrip line and the high-frequency open-circuit loaded microstrip line are both quarter-wavelength; the low-frequency negative group time-delay open-circuit line and the high-frequency negative group time-delay open-circuit line are both quarter-wavelength; the second microstrip transmission line and the first ring resonant microstrip line are both quarter-wavelength, parallel to each other, and have a coupling effect; the fourth microstrip transmission line and the seventh ring resonant microstrip line are both quarter-wavelength, parallel to each other, and have a coupling effect; the sixth microstrip transmission line and the sixth ring resonant microstrip line are both quarter-wavelength, parallel to each other, and have a coupling effect; the eighth microstrip transmission line and the twelfth ring resonant microstrip line are both quarter-wavelength, parallel to each other, and have a coupling effect. The third ring resonant microstrip line is parallel to the left vertical portion of the first time-modulated coupled resonant microstrip line and is coupled with it; the fourth ring resonant microstrip line is parallel to the left vertical portion of the second time-modulated coupled resonant microstrip line and is coupled with it; the ninth ring resonant microstrip line is parallel to the right vertical portion of the third time-modulated coupled resonant microstrip line and is coupled with it; the tenth ring resonant microstrip line is parallel to the right vertical portion of the fourth time-modulated coupled resonant microstrip line and is coupled with it; the right vertical portion of the first time-modulated coupled resonant microstrip line is parallel to the left vertical portion of the third time-modulated coupled resonant microstrip line and is coupled with it; the right vertical portion of the second time-modulated coupled resonant microstrip line is parallel to the left vertical portion of the fourth time-modulated coupled resonant microstrip line and is coupled with it.

[0007] Furthermore, by adjusting the characteristic impedances of the first low-frequency group delay equalization circuit, the second low-frequency group delay equalization circuit, the first high-frequency group delay equalization circuit, and the second high-frequency group delay equalization circuit, the group delay fluctuations near the center frequency of the balanced non-magnetic non-reciprocal bandpass filter are reduced.

[0008] Furthermore, by adjusting the length of the low-frequency resistor-loaded microstrip line and the resistance value of the low-frequency negative group delay absorption resistor, the group delay fluctuation value in the low-frequency band to the left of the passband center frequency of the balanced non-magnetic non-reciprocal bandpass filter can be reduced.

[0009] Furthermore, by adjusting the length of the high-frequency resistor-loaded microstrip line and the resistance value of the high-frequency negative group delay absorption resistor, the group delay fluctuation value in the high-frequency band to the right of the passband center frequency of the balanced non-magnetic non-reciprocal bandpass filter can be reduced.

[0010] Furthermore, by adjusting the DC voltage output of the first power supply... V dc AC voltage amplitude V ac ,frequency f m The initial phase φ1 and the DC voltage output by the second power supply Vdc AC voltage amplitude V ac ,frequency f m And the initial phase φ2, to complete time modulation, control the transmission of the forward differential signal and simultaneously cut off the reverse differential signal, thereby realizing the non-reciprocity of the balanced tapeless pass-through filter with full passband linear phase characteristics.

[0011] Furthermore, both the first and second power supplies output only DC voltage. V dc At that time, the filter is a balanced reciprocal bandpass filter.

[0012] Furthermore, by using a first full-wavelength ring resonant microstrip line and a second full-wavelength ring resonant microstrip line, no resonance is generated at the center frequency under common-mode signal excitation, thus achieving common-mode suppression characteristics.

[0013] Furthermore, by adjusting the characteristic impedance of the four half-wavelength open-circuit transmission lines, the distance between the second microstrip transmission line and the first ring resonant microstrip line, the distance between the fourth microstrip transmission line and the seventh ring resonant microstrip line, the distance between the sixth microstrip transmission line and the sixth ring resonant microstrip line, the distance between the eighth microstrip transmission line and the twelfth ring resonant microstrip line, the distance between the third ring resonant microstrip line and the first time-modulated coupled resonant microstrip line, the distance between the fourth ring resonant microstrip line and the second time-modulated coupled resonant microstrip line, the distance between the ninth ring resonant microstrip line and the third time-modulated coupled resonant microstrip line, the distance between the tenth ring resonant microstrip line and the fourth time-modulated coupled resonant microstrip line, the distance between the first time-modulated coupled resonant microstrip line and the third time-modulated coupled resonant microstrip line, and the distance between the second time-modulated coupled resonant microstrip line and the fourth time-modulated coupled resonant microstrip line, the passband bandwidth and frequency selectivity of the balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics can be adjusted.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows: To improve the signal integrity of balanced non-reciprocal bandpass filters and address the current research gaps in the full-passband linear phase characteristics of time-modulated resonator-based non-magnetic non-reciprocal filters, this invention provides a balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics. This balanced non-magnetic non-reciprocal filter is designed and manufactured using microstrip lines and can be integrated with other circuits on a single PCB board. By adding low-frequency group delay equalization circuits and high-frequency group delay equalization circuits at the balanced input and output ports respectively, full-passband linear phase characteristics are achieved, reducing phase distortion and thus lowering the system's bit error rate and improving signal integrity. Utilizing the characteristic that the ring resonant microstrip line has different resonant frequencies under common-mode and differential-mode signal excitation, excellent common-mode rejection is achieved, improving the circuit's electromagnetic compatibility. The overall circuit design exhibits strong anti-interference capabilities, ease of integration, and high signal transmission quality, and is expected to further improve the overall performance of balanced RF circuits. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of the structure of a balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics according to the present invention. Figure 2 This invention relates to a balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics, in a hybrid state without time modulation. S Parameter amplitude curve; Figure 3 This invention relates to the differential mode of a balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics under time modulation. S ddBA | and | S ddAB |Graph; Figure 4 This invention relates to the differential mode of a balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics under time modulation. S ddAA | and | S ddBB |Graph; Figure 5 This invention relates to the common-mode characteristics of a balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase properties under time modulation.S Parameter amplitude curve; Figure 6 This is a comparison diagram of the differential group delay curves of a balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics, without a low-frequency and high-frequency group delay equalization circuit and with a low-frequency and high-frequency group delay equalization circuit. Detailed Implementation

[0017] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0018] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0019] like Figure 1 As shown, the present invention provides a balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics, comprising: a balanced differential input port A, a balanced differential output port B, two sets of low-frequency group delay equalization circuits, two sets of high-frequency group delay equalization circuits, four half-wavelength open-circuit transmission lines, two full-wavelength ring resonant microstrip lines, two time-modulated resonant microstrip lines, four varactor diodes, two feed microstrip lines, and two power supplies; The balanced differential input port A includes input port A+1 and input port A. 3; The balanced differential output port B includes output port B+2 and output port B. 4; The two sets of low-frequency group delay equalization circuits include a first low-frequency group delay equalization circuit 5 and a second low-frequency group delay equalization circuit 6; wherein the first low-frequency group delay equalization circuit 5 is connected to the connection between input port A+1 and the first open-circuit transmission line 9; the second low-frequency group delay equalization circuit 6 is connected to input port A+1. 3. Connection point with the third open transmission line 11; The first low-frequency group delay equalization circuit 5 and the second low-frequency group delay equalization circuit 6 have the same structure; the first low-frequency group delay equalization circuit 5 includes a low-frequency negative group delay parallel coupling line 51, a low-frequency negative group delay open line 52, and a low-frequency negative group delay absorption resistor 53; wherein the low-frequency negative group delay parallel coupling line 51 includes a low-frequency resistor-loaded microstrip line 511 and a low-frequency open line-loaded microstrip line 512; the A port 1a of the low-frequency negative group delay parallel coupling line 51 is grounded, and the B port 1b of the low-frequency negative group delay parallel coupling line 51 is connected to the input. The connection between port A+1 and the first open transmission line 9, port C 1c of the low-frequency negative group delay parallel coupling line 51 is connected to the low-frequency negative group delay absorption resistor 53, and port D 1d of the low-frequency negative group delay parallel coupling line 51 is connected to the low-frequency negative group delay open line 52; one end of the low-frequency negative group delay open line 52 is connected to port D 1d of the low-frequency negative group delay parallel coupling line 51, and the other end is open; one end of the low-frequency negative group delay absorption resistor 53 is connected to port C 1c of the low-frequency negative group delay parallel coupling line 51, and the other end is grounded; The two sets of high-frequency group delay equalization circuits include a first high-frequency group delay equalization circuit 7 and a second high-frequency group delay equalization circuit 8; wherein the first high-frequency group delay equalization circuit 7 is connected to the connection between output port B+2 and the second open-circuit transmission line 10; the second high-frequency group delay equalization circuit 8 is connected to output port B+2. 4. Connection point with the fourth open transmission line 12; The first high-frequency group delay equalization circuit 7 and the second high-frequency group delay equalization circuit 8 have the same structure; the first high-frequency group delay equalization circuit 7 includes a high-frequency negative group delay parallel coupling line 71, a high-frequency negative group delay open line 72, and a high-frequency negative group delay absorption resistor 73; wherein the high-frequency negative group delay parallel coupling line 71 includes a high-frequency resistor-loaded microstrip line 711 and a high-frequency open line-loaded microstrip line 712; the A port 3a of the high-frequency negative group delay parallel coupling line 71 is grounded, and the B port 3b of the high-frequency negative group delay parallel coupling line 71 is connected to the output. The connection between port B+2 and the second open-circuit transmission line 10, port C 3c of the high-frequency negative group delay parallel coupling line 71 is connected to the high-frequency negative group delay absorption resistor 73, and port D 3d of the high-frequency negative group delay parallel coupling line 71 is connected to the high-frequency negative group delay open line 72; one end of the high-frequency negative group delay open line 72 is connected to port D 3d of the high-frequency negative group delay parallel coupling line 71, and the other end is open-circuited; one end of the high-frequency negative group delay absorption resistor 73 is connected to port C 3c of the high-frequency negative group delay parallel coupling line 71, and the other end is grounded; The four half-wavelength open-circuit transmission lines include a first open-circuit transmission line 9, a second open-circuit transmission line 10, a third open-circuit transmission line 11, and a fourth open-circuit transmission line 12; wherein the first open-circuit transmission line 9 includes a first microstrip transmission line 91 and a second microstrip transmission line 92; the second open-circuit transmission line 10 includes a third microstrip transmission line 101 and a fourth microstrip transmission line 102; the third open-circuit transmission line 11 includes a fifth microstrip transmission line 111 and a sixth microstrip transmission line 112; the fourth open-circuit transmission line 12 includes a seventh microstrip transmission line 121 and an eighth microstrip transmission line 122; one end of the first microstrip transmission line 91 is connected to the connection between the input port A+1 and the first low-frequency group delay equalization circuit 5, and the other end is connected to the second microstrip transmission line 92; one end of the second microstrip transmission line 92 is connected to the first microstrip transmission line 91, and the other end is open-circuited; One end of the third microstrip transmission line 101 is connected to the connection between the output port B+2 and the first high-frequency group delay equalization circuit 7, and the other end is connected to the fourth microstrip transmission line 102; one end of the fourth microstrip transmission line 102 is connected to the third microstrip transmission line 101, and the other end is open; one end of the fifth microstrip transmission line 111 is connected to the connection between the input port A-3 and the second low-frequency group delay equalization circuit 6, and the other end is connected to the sixth microstrip transmission line 112; one end of the sixth microstrip transmission line 112 is connected to the fifth microstrip transmission line 111, and the other end is open; one end of the seventh microstrip transmission line 121 is connected to the connection between the output port B-4 and the second high-frequency group delay equalization circuit 8, and the other end is connected to the eighth microstrip transmission line 122; one end of the eighth microstrip transmission line 122 is connected to the seventh microstrip transmission line 121, and the other end is open; The two full-wavelength ring resonant microstrip lines include a first full-wavelength ring resonant microstrip line 13 and a second full-wavelength ring resonant microstrip line 14; wherein the first full-wavelength ring resonant microstrip line 13 includes a first ring resonant microstrip line 131, a second ring resonant microstrip line 132, a third ring resonant microstrip line 133, a fourth ring resonant microstrip line 134, a fifth ring resonant microstrip line 135, and a sixth ring resonant microstrip line 136; the second full-wavelength ring resonant microstrip line 14 includes a seventh ring resonant microstrip line 141, an eighth ring resonant microstrip line 142, a ninth ring resonant microstrip line 143, and a tenth ring resonant microstrip line. 144. Eleventh ring resonant microstrip line 145 and twelfth ring resonant microstrip line 146; one end of the first ring resonant microstrip line 131 is connected to the sixth ring resonant microstrip line 136, and the other end is connected to the second ring resonant microstrip line 132; one end of the second ring resonant microstrip line 132 is connected to the first ring resonant microstrip line 131, and the other end is connected to the third ring resonant microstrip line 133; one end of the third ring resonant microstrip line 133 is connected to the second ring resonant microstrip line 132, and the other end is grounded; one end of the fourth ring resonant microstrip line 134 is connected to the fifth ring resonant microstrip line 135. One end of the fifth ring resonant microstrip line 135 is connected to the fourth ring resonant microstrip line 134, and the other end is connected to the sixth ring resonant microstrip line 136; one end of the sixth ring resonant microstrip line 136 is connected to the fifth ring resonant microstrip line 135, and the other end is connected to the first ring resonant microstrip line 131; one end of the seventh ring resonant microstrip line 141 is connected to the twelfth ring resonant microstrip line 146, and the other end is connected to the eighth ring resonant microstrip line 142; one end of the eighth ring resonant microstrip line 142 is connected to the seventh ring resonant microstrip line 141, and the other end is connected to the ground. It is connected to the ninth ring resonant microstrip line 143; one end of the ninth ring resonant microstrip line 143 is connected to the eighth ring resonant microstrip line 142, and the other end is grounded; one end of the tenth ring resonant microstrip line 144 is connected to the eleventh ring resonant microstrip line 145, and the other end is grounded; one end of the eleventh ring resonant microstrip line 145 is connected to the tenth ring resonant microstrip line 144, and the other end is connected to the twelfth ring resonant microstrip line 146; one end of the twelfth ring resonant microstrip line 146 is connected to the eleventh ring resonant microstrip line 145, and the other end is connected to the seventh ring resonant microstrip line 141; The two time-modulated resonant microstrip lines include a first time-modulated resonant microstrip line 15 and a second time-modulated resonant microstrip line 16; wherein the first time-modulated resonant microstrip line 15 includes a first time-modulated coupled resonant microstrip line 151 and a second time-modulated coupled resonant microstrip line 152; the second time-modulated resonant microstrip line 16 includes a third time-modulated coupled resonant microstrip line 161 and a fourth time-modulated coupled resonant microstrip line 162; one end of the first time-modulated coupled resonant microstrip line 151 is connected to the cathode of the first varactor diode 17, and the other end is connected to the connection between the second time-modulated coupled resonant microstrip line 152 and the first feed microstrip line 21; One end of the second time-modulated coupled resonant microstrip line 152 is connected to the cathode of the second varactor diode 18, and the other end is connected to the connection between the first time-modulated coupled resonant microstrip line 151 and the first feed microstrip line 21; one end of the third time-modulated coupled resonant microstrip line 161 is connected to the cathode of the third varactor diode 19, and the other end is connected to the connection between the fourth time-modulated coupled resonant microstrip line 162 and the second feed microstrip line 22; one end of the fourth time-modulated coupled resonant microstrip line 162 is connected to the cathode of the fourth varactor diode 20, and the other end is connected to the connection between the third time-modulated coupled resonant microstrip line 161 and the second feed microstrip line 22; The four varactor diodes include a first varactor diode 17, a second varactor diode 18, a third varactor diode 19, and a fourth varactor diode 20; wherein the cathode of the first varactor diode 17 is connected to a first time-modulated coupled resonant microstrip line 151, and the anode of the other end is grounded; the cathode of the second varactor diode 18 is connected to a second time-modulated coupled resonant microstrip line 152, and the anode of the other end is grounded; the cathode of the third varactor diode 19 is connected to a third time-modulated coupled resonant microstrip line 161, and the anode of the other end is grounded; the cathode of the fourth varactor diode 20 is connected to a fourth time-modulated coupled resonant microstrip line 162, and the anode of the other end is grounded. The two-segment power-fed microstrip line includes a first power-fed microstrip line 21 and a second power-fed microstrip line 22; wherein one end of the first power-fed microstrip line 21 is connected to the connection between the first time-modulated coupled resonant microstrip line 151 and the second time-modulated coupled resonant microstrip line 152, and the other end is connected to the first power supply 23; one end of the second power-fed microstrip line 22 is connected to the connection between the third time-modulated coupled resonant microstrip line 161 and the fourth time-modulated coupled resonant microstrip line 162, and the other end is connected to the second power supply 24.

[0020] The two power sources include a first power source 23 and a second power source 24; wherein the first power source 23 is connected to the first feed microstrip line 21; and the second power source 24 is connected to the second feed microstrip line 22.

[0021] The low-frequency open-circuit loaded microstrip line 512 and the high-frequency open-circuit loaded microstrip line 712 are both quarter-wavelength; the low-frequency negative group time delay open-circuit line 52 and the high-frequency negative group time delay open-circuit line 72 are both quarter-wavelength; the second microstrip transmission line 92 and the first ring resonant microstrip line 131 are both quarter-wavelength, parallel to each other, and have a coupling effect; the fourth microstrip transmission line 102 and the seventh ring resonant microstrip line 141 are both quarter-wavelength, parallel to each other, and have a coupling effect; the sixth microstrip transmission line 112 and the sixth ring resonant microstrip line 136 are both quarter-wavelength, parallel to each other, and have a coupling effect; the eighth microstrip transmission line 122 and the twelfth ring resonant microstrip line 146 are both quarter-wavelength, parallel to each other, and have a coupling effect.

[0022] The third ring resonant microstrip line 133 is parallel to the left vertical portion of the first time-modulated coupled resonant microstrip line 151 and is coupled with it; the fourth ring resonant microstrip line 134 is parallel to the left vertical portion of the second time-modulated coupled resonant microstrip line 152 and is coupled with it; the ninth ring resonant microstrip line 143 is parallel to the right vertical portion of the third time-modulated coupled resonant microstrip line 161 and is coupled with it; the tenth ring resonant microstrip line 144 is parallel to the right vertical portion of the fourth time-modulated coupled resonant microstrip line 162 and is coupled with it; the right vertical portion of the first time-modulated coupled resonant microstrip line 151 is parallel to the left vertical portion of the third time-modulated coupled resonant microstrip line 161 and is coupled with it; the right vertical portion of the second time-modulated coupled resonant microstrip line 152 is parallel to the left vertical portion of the fourth time-modulated coupled resonant microstrip line 162 and is coupled with it.

[0023] Furthermore, by adjusting the characteristic impedances of the first low-frequency group delay equalization circuit 5, the second low-frequency group delay equalization circuit 6, the first high-frequency group delay equalization circuit 7, and the second high-frequency group delay equalization circuit 8, the group delay fluctuations near the center frequency of the balanced non-magnetic non-reciprocal bandpass filter are reduced.

[0024] Furthermore, by adjusting the length of the low-frequency resistor-loaded microstrip line 511 and the resistance value of the low-frequency negative group delay absorption resistor 53, the group delay fluctuation value in the low-frequency band to the left of the center frequency of the passband of the balanced non-magnetic non-reciprocal bandpass filter is reduced.

[0025] Furthermore, by adjusting the length of the high-frequency resistor-loaded microstrip line 711 and the resistance value of the high-frequency negative group delay absorption resistor 73, the group delay fluctuation value in the high-frequency band to the right of the passband center frequency of the balanced non-magnetic non-reciprocal bandpass filter is reduced.

[0026] Furthermore, by adjusting the DC voltage output of the first power supply 23 Vdc AC voltage amplitude V ac ,frequency f m The initial phase φ1 and the DC voltage output by the second power supply 24 V dc AC voltage amplitude V ac ,frequency f m And the initial phase φ2, to complete time modulation, control the transmission of the forward differential signal and simultaneously cut off the reverse differential signal, thereby realizing the non-reciprocity of the balanced tapeless pass-through filter with full passband linear phase characteristics.

[0027] Furthermore, both the first power supply 23 and the second power supply 24 output only DC voltage. V dc At that time, the filter is a balanced reciprocal bandpass filter.

[0028] Furthermore, the first full-wavelength ring resonant microstrip line 13 and the second full-wavelength ring resonant microstrip line 14 do not resonate at the center frequency under common-mode signal excitation, thus achieving common-mode suppression characteristics.

[0029] Furthermore, by adjusting the characteristic impedance of the four half-wavelength open-circuit transmission lines, the distance between the second microstrip transmission line 92 and the first ring resonant microstrip line 131, the distance between the fourth microstrip transmission line 102 and the seventh ring resonant microstrip line 141, the distance between the sixth microstrip transmission line 112 and the sixth ring resonant microstrip line 136, the distance between the eighth microstrip transmission line 122 and the twelfth ring resonant microstrip line 146, the distance between the third ring resonant microstrip line 133 and the first time-modulated coupling resonant microstrip line 151, and the distance between the fourth ring resonant microstrip line 134 and the second time-modulated coupling resonant microstrip line 151, the distance between the second time-modulated coupling resonant microstrip line 151 and the third time-modulated coupling resonant microstrip line 151 can be further improved. The distances between the resonant microstrip line 152, the ninth ring resonant microstrip line 143 and the third time-modulated coupled resonant microstrip line 161, the tenth ring resonant microstrip line 144 and the fourth time-modulated coupled resonant microstrip line 162, the first time-modulated coupled resonant microstrip line 151 and the third time-modulated coupled resonant microstrip line 161, and the second time-modulated coupled resonant microstrip line 152 and the fourth time-modulated coupled resonant microstrip line 162 are adjusted to regulate the passband bandwidth and frequency selectivity of a balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics.

[0030] Specific example: This example illustrates a balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics. For example... Figure 2As shown, the balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics described in this invention behaves as a balanced reciprocal bandpass filter when no time modulation is applied; the differential-mode reflection coefficient at the filter's passband center frequency of 1.5 GHz is | S ddAA |for 21.6dB, differential mode reflection coefficient | S ddBB |for 21.4dB; Minimum differential mode transmission loss within the filter passband | S ddBA |for 1.5dB; the filter's 3dB filtering bandwidth is 9.1%. For example... Figure 3 As shown, the balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics described in this invention behaves as a balanced non-reciprocal bandpass filter with full-passband linear phase characteristics under time modulation; the minimum differential mode transmission loss in the forward passband of the filter is | S ddBA |for 2.6dB; Filter reverse transmission coefficient | S ddAB |less than A 20dB bandwidth corresponds to 30.7MHz. For example... Figure 4 As shown, the differential-mode reflection coefficient of a balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics described in this invention, under time modulation, at the filter passband center frequency of 1.5 GHz, is | S ddAA |for 21.2dB, differential mode reflection coefficient | S ddBB |for 19.6dB. For example... Figure 5 As shown, the balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics described in this invention exhibits common-mode transmission suppression in the frequency range from 1.2 GHz to 1.8 GHz under time modulation. S ccBA |&| S ccAB | all smaller than 58dB. For example... Figure 6As shown, the balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics described in this invention, under time modulation, with the addition of a low-frequency and high-frequency group delay equalization circuit, exhibits a group delay ripple of less than 0.26 ns within the passband. This indicates that the balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics described in this invention effectively suppresses common-mode noise under time modulation. By compensating for the phase frequency characteristics, it achieves full-passband linear phase characteristics while also possessing good forward filtering transmission and reverse isolation characteristics.

[0031] In summary, the balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics described in this invention not only effectively suppresses common-mode noise and exhibits excellent electromagnetic compatibility, but also reduces group delay ripple by adding a group delay equalization circuit, achieving full-passband linear phase characteristics, avoiding phase distortion, reducing bit error rate, and contributing to improved signal integrity. Furthermore, this balanced non-reciprocal filter combines the reverse isolation characteristics of an isolator with the frequency selectivity of a filter. In addition, the balanced non-magnetic non-reciprocal bandpass filter with full-passband linear phase characteristics described in this invention is designed and manufactured using an easily integrated microstrip line structure, and can be implemented on a single PCB board, making it highly suitable for application in various balanced microwave systems to improve overall system performance.

[0032] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A balanced non-magnetic non-reciprocal bandpass filter having an all-pass band linear phase characteristic, characterized by, include: Balanced differential input port A, balanced differential output port B, two sets of low-frequency group delay equalization circuits, two sets of high-frequency group delay equalization circuits, four half-wavelength open-circuit transmission lines, two full-wavelength ring resonant microstrip lines, two time-modulated resonant microstrip lines, four varactor diodes, two feed microstrip lines, and two power supplies. The balanced differential input port A includes an input port A+ (1) and an input port A (3); The balanced differential output port B comprises an output port B+ (2) and an output port B (4); The two groups of low-frequency group time delay equalization circuits comprise a first low-frequency group time delay equalization circuit (5) and a second low-frequency group time delay equalization circuit (6); wherein the first low-frequency group time delay equalization circuit (5) is connected to the connection between the input port A+ (1) and the first open-circuit transmission line (9); and the second low-frequency group time delay equalization circuit (6) is connected to the connection between the input port A (3) and the third open-circuit transmission line (11). The first low-frequency group delay equalization circuit (5) and the second low-frequency group delay equalization circuit (6) have the same structure; the first low-frequency group delay equalization circuit (5) includes a low-frequency negative group delay parallel coupling line (51), a low-frequency negative group delay open line (52), and a low-frequency negative group delay absorption resistor (53); wherein the low-frequency negative group delay parallel coupling line (51) includes a low-frequency resistor-loaded microstrip line (511) and a low-frequency open line-loaded microstrip line (512); the A port (1a) of the low-frequency negative group delay parallel coupling line (51) is grounded and low-frequency... The B port (1b) of the low-frequency negative group delay parallel coupling line (51) is connected to the connection between the input port A+ (1) and the first open transmission line (9); the C port (1c) of the low-frequency negative group delay parallel coupling line (51) is connected to the low-frequency negative group delay absorption resistor (53); and the D port (1d) of the low-frequency negative group delay parallel coupling line (51) is connected to the low-frequency negative group delay open line (52). One end of the low-frequency negative group delay open line (52) is connected to the D port (1d) of the low-frequency negative group delay parallel coupling line (51), and the other end is open. One end of the low-frequency negative group delay absorption resistor (53) is connected to the C port (1c) of the low-frequency negative group delay parallel coupling line (51), and the other end is grounded; The two sets of high-frequency group delay equalization circuits include a first high-frequency group delay equalization circuit (7) and a second high-frequency group delay equalization circuit (8); wherein the first high-frequency group delay equalization circuit (7) is connected to the connection between the output port B+ (2) and the second open-circuit transmission line (10); the second high-frequency group delay equalization circuit (8) is connected to the output port B+ (2). (4) The connection point with the fourth open-circuit transmission line (12); The first high-frequency group delay equalization circuit (7) and the second high-frequency group delay equalization circuit (8) have the same structure; the first high-frequency group delay equalization circuit (7) includes a high-frequency negative group delay parallel coupling line (71), a high-frequency negative group delay open line (72), and a high-frequency negative group delay absorption resistor (73); wherein the high-frequency negative group delay parallel coupling line (71) includes a high-frequency resistor-loaded microstrip line (711) and a high-frequency open line-loaded microstrip line (712); the A port (3a) of the high-frequency negative group delay parallel coupling line (71) is grounded, and the B port (3b) of the high-frequency negative group delay parallel coupling line (71) is connected to the output terminal. The connection between port B+ (2) and the second open-circuit transmission line (10), the C port (3c) of the high-frequency negative group delay parallel coupling line (71) is connected to the high-frequency negative group delay absorption resistor (73), and the D port (3d) of the high-frequency negative group delay parallel coupling line (71) is connected to the high-frequency negative group delay open line (72); one end of the high-frequency negative group delay open line (72) is connected to the D port (3d) of the high-frequency negative group delay parallel coupling line (71), and the other end is open-circuited; one end of the high-frequency negative group delay absorption resistor (73) is connected to the C port (3c) of the high-frequency negative group delay parallel coupling line (71), and the other end is grounded; The four half-wavelength open-circuit transmission lines include a first open-circuit transmission line (9), a second open-circuit transmission line (10), a third open-circuit transmission line (11), and a fourth open-circuit transmission line (12); wherein the first open-circuit transmission line (9) includes a first microstrip transmission line (91) and a second microstrip transmission line (92); the second open-circuit transmission line (10) includes a third microstrip transmission line (101) and a fourth microstrip transmission line (102); the third open-circuit transmission line (11) includes a fifth microstrip transmission line (92). The first microstrip transmission line (91) has a first microstrip transmission line (91) and a second microstrip transmission line (92). The second microstrip transmission line (92) has a first microstrip transmission line (91) connected to the input port A+ (1) and the first low-frequency group delay equalization circuit (5), and the other end connected to the second microstrip transmission line (92). The second microstrip transmission line (92) has a first microstrip transmission line (91) connected to the first microstrip transmission line (91), and the other end connected to the second microstrip transmission line (92). One end of the third microstrip transmission line (101) is connected to the connection between the output port B+ (2) and the first high-frequency group delay equalization circuit (7), and the other end is connected to the fourth microstrip transmission line (102); one end of the fourth microstrip transmission line (102) is connected to the third microstrip transmission line (101), and the other end is open-circuited; one end of the fifth microstrip transmission line (111) is connected to the connection between the input port A- (3) and the second low-frequency group delay equalization circuit (6), and the other end is open-circuited. The sixth microstrip transmission line (112) is connected to the fifth microstrip transmission line (111); one end of the sixth microstrip transmission line (112) is connected to the fifth microstrip transmission line (111), and the other end is open; one end of the seventh microstrip transmission line (121) is connected to the connection between the output port B- (4) and the second high-frequency group delay equalization circuit (8), and the other end is connected to the eighth microstrip transmission line (122); one end of the eighth microstrip transmission line (122) is connected to the seventh microstrip transmission line (121), and the other end is open; The two full-wavelength ring resonant microstrip lines include a first full-wavelength ring resonant microstrip line (13) and a second full-wavelength ring resonant microstrip line (14); wherein the first full-wavelength ring resonant microstrip line (13) includes a first ring resonant microstrip line (131), a second ring resonant microstrip line (132), a third ring resonant microstrip line (133), a fourth ring resonant microstrip line (134), a fifth ring resonant microstrip line (135), and a sixth ring resonant microstrip line (136); the second full-wavelength ring resonant microstrip line (14) includes a seventh ring resonant microstrip line (141), an eighth ring resonant microstrip line (142), a ninth ring resonant microstrip line (143), and a tenth ring resonant microstrip line (146). The first ring resonant microstrip line (131) is connected to the sixth ring resonant microstrip line (136) at one end and to the second ring resonant microstrip line (132) at the other end; the second ring resonant microstrip line (132) is connected to the first ring resonant microstrip line (131) at one end and to the third ring resonant microstrip line (133) at the other end; the third ring resonant microstrip line (133) is connected to the second ring resonant microstrip line (132) at one end and to ground at the other end; the fourth ring resonant microstrip line (134) is connected to the fifth ring resonant microstrip line (145) at one end and to the fifth ring resonant microstrip line (146) at the other end. One end of the fifth ring resonant microstrip line (135) is connected to the fourth ring resonant microstrip line (134), and the other end is connected to the sixth ring resonant microstrip line (136); one end of the sixth ring resonant microstrip line (136) is connected to the fifth ring resonant microstrip line (135), and the other end is connected to the first ring resonant microstrip line (131); one end of the seventh ring resonant microstrip line (141) is connected to the twelfth ring resonant microstrip line (146), and the other end is connected to the eighth ring resonant microstrip line (142); one end of the eighth ring resonant microstrip line (142) is connected to the seventh ring resonant microstrip line (141), and the other end is connected to the ground. One end is connected to the ninth ring resonant microstrip line (143); one end of the ninth ring resonant microstrip line (143) is connected to the eighth ring resonant microstrip line (142), and the other end is grounded; one end of the tenth ring resonant microstrip line (144) is connected to the eleventh ring resonant microstrip line (145), and the other end is grounded; one end of the eleventh ring resonant microstrip line (145) is connected to the tenth ring resonant microstrip line (144), and the other end is connected to the twelfth ring resonant microstrip line (146); one end of the twelfth ring resonant microstrip line (146) is connected to the eleventh ring resonant microstrip line (145), and the other end is connected to the seventh ring resonant microstrip line (141); The two time-modulated resonant microstrip lines include a first time-modulated resonant microstrip line (15) and a second time-modulated resonant microstrip line (16); wherein the first time-modulated resonant microstrip line (15) includes a first time-modulated coupled resonant microstrip line (151) and a second time-modulated coupled resonant microstrip line (152); the second time-modulated resonant microstrip line (16) includes a third time-modulated coupled resonant microstrip line (161) and a fourth time-modulated coupled resonant microstrip line (162); one end of the first time-modulated coupled resonant microstrip line (151) is connected to the cathode of the first varactor diode (17), and the other end is connected to the connection between the second time-modulated coupled resonant microstrip line (152) and the first feed microstrip line (21); One end of the second time-modulated coupled resonant microstrip line (152) is connected to the cathode of the second varactor diode (18), and the other end is connected to the connection between the first time-modulated coupled resonant microstrip line (151) and the first feed microstrip line (21); One end of the third time-modulated coupled resonant microstrip line (161) is connected to the cathode of the third varactor diode (19), and the other end is connected to the connection between the fourth time-modulated coupled resonant microstrip line (162) and the second feed microstrip line (22); one end of the fourth time-modulated coupled resonant microstrip line (162) is connected to the cathode of the fourth varactor diode (20), and the other end is connected to the connection between the third time-modulated coupled resonant microstrip line (161) and the second feed microstrip line (22); The four varactor diodes include a first varactor diode (17), a second varactor diode (18), a third varactor diode (19), and a fourth varactor diode (20); wherein the cathode of the first varactor diode (17) is connected to a first time-modulated coupled resonant microstrip line (151), and the anode of the other end is grounded; the cathode of the second varactor diode (18) is connected to a second time-modulated coupled resonant microstrip line (152), and the anode of the other end is grounded; the cathode of the third varactor diode (19) is connected to a third time-modulated coupled resonant microstrip line (161), and the anode of the other end is grounded; the cathode of the fourth varactor diode (20) is connected to a fourth time-modulated coupled resonant microstrip line (162), and the anode of the other end is grounded; The two-segment power-fed microstrip line includes a first power-fed microstrip line (21) and a second power-fed microstrip line (22); wherein one end of the first power-fed microstrip line (21) is connected to the connection between the first time-modulated coupled resonant microstrip line (151) and the second time-modulated coupled resonant microstrip line (152), and the other end is connected to the first power supply (23); one end of the second power-fed microstrip line (22) is connected to the connection between the third time-modulated coupled resonant microstrip line (161) and the fourth time-modulated coupled resonant microstrip line (162), and the other end is connected to the second power supply (24); The two power sources include a first power source (23) and a second power source (24); wherein the first power source (23) is connected to the first feed microstrip line (21); and the second power source (24) is connected to the second feed microstrip line (22). The low-frequency open-circuit loaded microstrip line (512) and the high-frequency open-circuit loaded microstrip line (712) are both quarter wavelengths; the low-frequency negative group time delay open-circuit line (52) and the high-frequency negative group time delay open-circuit line (72) are both quarter wavelengths; the second microstrip transmission line (92) and the first ring resonant microstrip line (131) are both quarter wavelengths, parallel to each other and have a coupling effect; the fourth microstrip transmission line (102) and the seventh ring resonant microstrip line (141) are both quarter wavelengths, parallel to each other and have a coupling effect; the sixth microstrip transmission line (112) and the sixth ring resonant microstrip line (136) are both quarter wavelengths, parallel to each other and have a coupling effect; the eighth microstrip transmission line (122) and the twelfth ring resonant microstrip line (146) are both quarter wavelengths, parallel to each other and have a coupling effect; The third ring resonant microstrip line (133) is parallel to the left vertical portion of the first time-modulated coupled resonant microstrip line (151) and has a coupling effect; the fourth ring resonant microstrip line (134) is parallel to the left vertical portion of the second time-modulated coupled resonant microstrip line (152) and has a coupling effect; the ninth ring resonant microstrip line (143) is parallel to the right vertical portion of the third time-modulated coupled resonant microstrip line (161) and has a coupling effect; the tenth ring resonant microstrip line (144) is parallel to the right vertical portion of the fourth time-modulated coupled resonant microstrip line (162) and has a coupling effect; the right vertical portion of the first time-modulated coupled resonant microstrip line (151) is parallel to the left vertical portion of the third time-modulated coupled resonant microstrip line (161) and has a coupling effect; the right vertical portion of the second time-modulated coupled resonant microstrip line (152) is parallel to the left vertical portion of the fourth time-modulated coupled resonant microstrip line (162) and has a coupling effect.

2. A balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics according to claim 1, characterized in that: By adjusting the characteristic impedance of the first low-frequency group delay equalization circuit (5), the second low-frequency group delay equalization circuit (6), the first high-frequency group delay equalization circuit (7), and the second high-frequency group delay equalization circuit (8), the group delay fluctuation near the center frequency of the balanced non-magnetic non-reciprocal bandpass filter is reduced.

3. A balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics according to claim 1, characterized in that: By adjusting the length of the low-frequency resistive loading microstrip line (511) and the resistance value of the low-frequency negative group delay absorption resistor (53), the group delay fluctuation value in the low-frequency band to the left of the center frequency of the passband of the balanced non-magnetic non-reciprocal bandpass filter is reduced.

4. A balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics according to claim 1, characterized in that: By adjusting the length of the high-frequency resistive microstrip line (711) and the resistance value of the high-frequency negative group delay absorption resistor (73), the group delay fluctuation value of the high-frequency band to the right of the center frequency of the passband of the balanced non-magnetic non-reciprocal bandpass filter is reduced.

5. A balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics according to claim 1, characterized in that: By adjusting the DC voltage output of the first power supply (23) V dc AC voltage amplitude V ac ,frequency f m The initial phase φ1 and the DC voltage output by the second power supply (24) V dc AC voltage amplitude V ac ,frequency f m And the initial phase φ2, to complete time modulation, control the transmission of the forward differential signal and simultaneously cut off the reverse differential signal, thereby realizing the non-reciprocity of the balanced tapeless pass-through filter with full passband linear phase characteristics.

6. A balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics according to claim 1, characterized in that: The first power supply (23) and the second power supply (24) only output DC voltage. V dc At that time, the filter is a balanced reciprocal bandpass filter.

7. A balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics according to claim 1, characterized in that: By using the first full-wavelength ring resonant microstrip line (13) and the second full-wavelength ring resonant microstrip line (14) to achieve common-mode suppression characteristics, no resonance is generated at the center frequency under common-mode signal excitation.

8. A balanced, non-magnetic, non-reciprocal bandpass filter with full-passband linear phase characteristics according to claim 1, characterized in that: By adjusting the characteristic impedance of the four half-wavelength open-circuit transmission lines, the distance between the second microstrip transmission line (92) and the first ring resonant microstrip line (131), the distance between the fourth microstrip transmission line (102) and the seventh ring resonant microstrip line (141), the distance between the sixth microstrip transmission line (112) and the sixth ring resonant microstrip line (136), the distance between the eighth microstrip transmission line (122) and the twelfth ring resonant microstrip line (146), the distance between the third ring resonant microstrip line (133) and the first time-modulated coupling resonant microstrip line (151), and the distance between the fourth ring resonant microstrip line (134) and the second time-modulated coupling resonant microstrip line, the following parameters are used: The distances between the microstrip line (152), the ninth ring resonant microstrip line (143) and the third time-modulated coupled resonant microstrip line (161), the tenth ring resonant microstrip line (144) and the fourth time-modulated coupled resonant microstrip line (162), the first time-modulated coupled resonant microstrip line (151) and the third time-modulated coupled resonant microstrip line (161), and the second time-modulated coupled resonant microstrip line (152) and the fourth time-modulated coupled resonant microstrip line (162) are adjusted to regulate the passband bandwidth and frequency selectivity of a balanced non-magnetic non-reciprocal bandpass filter with full passband linear phase characteristics.

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