Radio wave reflection device

Abstract

The radio wave reflecting device includes: a plurality of reflective elements arranged at predetermined intervals in a first direction and in a second direction intersecting the first direction; and a plurality of light-emitting elements disposed in regions separated by the plurality of reflective elements. The reflective elements include: a patch electrode disposed on a first substrate; a ground electrode disposed on a second substrate opposite to the first substrate and overlapping the patch electrode; and a liquid crystal layer between the patch electrode and the ground electrode. The light-emitting elements include: a first electrode disposed on the first substrate; a second electrode disposed on the first substrate; and an organic light-emitting layer sandwiched between the first electrode and the second electrode.

Description

Technical Field

[0001] One embodiment of the present invention relates to an electromagnetic wave reflecting device capable of controlling the direction of travel of reflected electromagnetic waves. In particular, one embodiment of the present invention relates to an electromagnetic wave reflecting device having an image display function. Background Technology

[0002] In the field of wireless communication, communication using phased array antennas is being researched for 5G, which aims to achieve high-speed, high-capacity communication. A phased array antenna device controls directivity in a fixed antenna state by adjusting the amplitude and phase of the applied high-frequency signal for each of multiple antenna elements arranged in a planar pattern. Phased array antenna devices require phase shifters. Phased array antenna devices using phase shifters have been disclosed, which utilize the change in dielectric constant caused by the orientation state of liquid crystals (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 11-103201 Summary of the Invention

[0006] In mobile communications, there is a problem of communication degradation near densely populated areas such as train stations or event venues. Furthermore, large displays are often installed in these crowded locations for advertising and information dissemination. There are proposals to install both phased array antennas and information display devices in such locations.

[0007] However, it is difficult to ensure suitable locations for both the radio wave reflector and the information display equipment. Furthermore, since the information display equipment reflects radio waves, there is a risk of affecting the control of communication areas where the radio wave reflector is used.

[0008] In view of such problems, one of the objectives of one embodiment of the present invention is to give higher added value to the radio wave reflecting device.

[0009] An embodiment of the present invention provides an electromagnetic wave reflection device comprising: a plurality of reflective elements arranged at predetermined intervals in a first direction and in a second direction intersecting the first direction; and a plurality of light-emitting elements disposed in regions separated by the plurality of reflective elements. The reflective elements include: a patch electrode disposed on a first substrate; a ground electrode disposed on a second substrate opposite to the first substrate and overlapping the patch electrode; and a liquid crystal layer between the patch electrode and the ground electrode. The light-emitting elements include: a first electrode disposed on the first substrate; a second electrode disposed on the first substrate; and an organic light-emitting layer sandwiched between the first electrode and the second electrode.

[0010] An embodiment of the present invention provides an electromagnetic wave reflection device comprising: a plurality of reflective elements arranged at predetermined intervals in a first direction and in a second direction intersecting the first direction; and a plurality of light-emitting elements disposed in regions separated by the plurality of reflective elements. The reflective elements include: a driving electrode disposed on a first substrate; a patch electrode disposed on a second substrate opposite to the first substrate and overlapping the driving electrode; and a liquid crystal layer between the driving electrode and the patch electrode. The light-emitting elements include: a first electrode disposed on the first substrate; a second electrode disposed on the first substrate; and an organic light-emitting layer sandwiched between the first electrode and the second electrode. Attached Figure Description

[0011] Figure 1 A top view of a reflective element used in an electromagnetic wave reflecting device according to one embodiment of the present invention is shown.

[0012] Figure 2 The top view shows the cross-sectional structure between A1 and A2 of the reflective element used in an electromagnetic wave reflective device according to one embodiment of the present invention.

[0013] Figure 3 This illustrates one of two states in which the reflective element used in an electromagnetic wave reflection device according to an embodiment of the present invention is in operation, specifically the state in which no voltage is applied between the patch electrode and the ground electrode.

[0014] Figure 4 This illustrates one of two states in which a voltage is applied between a patch electrode and a ground electrode when the reflective element used in an electromagnetic wave reflective device according to an embodiment of the present invention is in operation.

[0015] Figure 5 The configuration of an electromagnetic wave reflection device according to one embodiment of the present invention is shown.

[0016] Figure 6 This is a schematic diagram illustrating how the direction of travel of a reflected wave is changed by an electromagnetic wave reflection device according to one embodiment of the present invention.

[0017] Figure 7 Showing will Figure 5The image shows a 2x2 reflective element and a magnified view of multiple pixels.

[0018] Figure 8 This is a circuit diagram of an electromagnetic wave reflection device.

[0019] Figure 9 It is a cross-sectional view showing the composition of the reflector unit and pixels.

[0020] Figure 10 It is a top view layout diagram that magnifies a portion of the common electrode of the reflective element and the pixel.

[0021] Figure 11 This is a layout diagram of the reflector unit cell and pixels when viewed from the dielectric substrate side.

[0022] Figure 12 It is a cross-sectional view showing the composition of the reflector unit and pixels.

[0023] Figure 13 This is a top view of the surface mount electrode layout when viewed from the side of the opposing substrate.

[0024] Figure 14 It is a top view layout diagram that magnifies a portion of the common electrode of the reflective element and the pixel.

[0025] Figure 15 It is a top view layout diagram that magnifies a portion of the common electrode of the reflective element and the pixel. Detailed Implementation

[0026] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention can be implemented in many different ways and is not limited to the description of the embodiments illustrated below. To make the description clearer, the width, thickness, shape, etc. of various parts of the drawings are sometimes shown schematically compared with the actual form, but this is only an example and does not limit the interpretation of the present invention. In addition, in this specification and in each drawing, the same reference numerals are used for elements that are the same as those described with respect to the figures that have already appeared (or reference numerals obtained by labeling them with a, b, etc. after the numbers), and detailed descriptions are sometimes appropriately omitted. Furthermore, the words "first" and "second" used to label each element are used to facilitate the distinction of each element, and unless otherwise specified, they do not have any other meaning.

[0027] In this specification, the phrase "above (or below) other components or regions" means, unless otherwise specified, not only the case where it is directly above (or directly below) other components or regions, but also the case where it is above (or below) other components or regions, that is, the case where it is above (or below) other components or regions and contains other constituent elements therebetween.

[0028] Reference Figures 1-11 An embodiment of the radio wave reflecting device of the present invention will be described. It should be noted that the radio wave reflecting device of this embodiment may also be referred to as a liquid crystal reflector, a reflective array, or a liquid crystal metasurface reflector, etc.

[0029] 1. Reflective element

[0030] First, refer to Figures 1-4 The structure of the reflective element 102 used in the radio wave reflector will be described. Figure 1 and Figure 2 The present invention illustrates a reflective element 102 used in an electromagnetic wave reflection device according to one embodiment of the present invention. Figure 1 This shows a top view of the reflective element 102 as viewed from above (the side where the radio waves are incident). Figure 2 The top view shows a sectional view between A1 and A2.

[0031] like Figure 1 and Figure 2 As shown, the reflective element 102 includes at least a patch electrode 108, a ground electrode 110, and a liquid crystal layer 114. The reflective element 102 may further include a dielectric substrate 104, a counter substrate 106, a first alignment film 112a, and a second alignment film 112b. In the reflective element 102, the dielectric substrate 104 can also be considered as a dielectric layer constituting a single layer. The patch electrode 108 is disposed on the dielectric substrate 104, and the ground electrode 110 is disposed on the counter substrate 106. The first alignment film 112a is disposed on the dielectric substrate 104 to cover the patch electrode 108, and the second alignment film 112b is disposed on the counter substrate 106 to cover the ground electrode 110. The patch electrode 108 and the ground electrode 110 are arranged opposite to each other, and the liquid crystal layer 114 is disposed between them. A first alignment film 112a is sandwiched between the patch electrode 108 and the liquid crystal layer 114, and a second alignment film 112b is sandwiched between the ground electrode 110 and the liquid crystal layer 114.

[0032] The patch electrode 108 preferably has a shape that is symmetrical with respect to the vertically polarized wave and the horizontally polarized wave of the incident electromagnetic wave, and has a square or circular shape when viewed from above. Figure 1The diagram shows the patch electrode 108 as a square when viewed from above. The shape of the ground electrode 110 is not particularly limited, and it has a shape that extends to approximately the entire surface of the opposing substrate 106 in a manner larger than the patch electrode 108. The materials used to form the patch electrode 108 and the ground electrode 110 are not limited, and conductive metals or metal oxides are used. A first wiring 118 may also be provided on the dielectric substrate 104. The first wiring 118 is connected to the patch electrode 108. The first wiring 118 is used when a control signal is applied to the patch electrode 108. Furthermore, in the case of a plurality of reflective elements 102 arranged, the first wiring 118 is used to connect a patch electrode to an adjacent patch electrode.

[0033] Figure 1 and Figure 2 Although not shown, the dielectric substrate 104 and the opposing substrate 106 are bonded together by a sealing material. The dielectric substrate 104 and the opposing substrate 106 are arranged opposite each other with a gap, and the liquid crystal layer 114 is disposed within the area enclosed by the sealing material. The liquid crystal layer 114 is disposed to fill the gap between the dielectric substrate 104 and the opposing substrate 106. The gap between the dielectric substrate 104 and the opposing substrate 106 is 20μm to 100μm, for example, 50μm. A patch electrode 108, a ground electrode 110, a first alignment film 112a, and a second alignment film 112b are provided between the dielectric substrate 104 and the opposing substrate 106. More precisely, the gap between the first alignment film 112a and the second alignment film 112b respectively disposed on the dielectric substrate 104 and the opposing substrate 106 constitutes the thickness of the liquid crystal layer 114. It should be noted that... Figure 2 Although not shown in the figure, a spacer for maintaining a constant spacing can be provided between the dielectric substrate 104 and the opposing substrate 106.

[0034] A control signal is applied to the patch electrode 108 to control the orientation of the liquid crystal molecules in the liquid crystal layer 114. The control signal is a DC voltage signal, or a polarity reversal signal that alternates between positive and negative DC voltages. A voltage at an intermediate level, either a ground voltage or a polarity reversal signal, is applied to the ground electrode 110. By applying the control signal to the patch electrode 108, the orientation state of the liquid crystal molecules contained in the liquid crystal layer 114 changes. The liquid crystal layer 114 uses a liquid crystal material with dielectric anisotropy. For example, nematic liquid crystals, smectic liquid crystals, cholesteric liquid crystals, or disk-shaped liquid crystals can be used as the liquid crystal layer 114. The dielectric constant of the liquid crystal layer 114 with dielectric anisotropy changes according to the change in the orientation state of the liquid crystal molecules. The reflective element 102 can change the dielectric constant of the liquid crystal layer 114 according to the control signal applied to the patch electrode 108, thereby delaying the phase of the reflected wave when reflecting radio waves.

[0035] The reflective element 102 reflects radio waves in the following frequency bands: Very High Frequency (VHF), Ultra-High Frequency (UHF), Super High Frequency (SHF), Tremendously High Frequency (THF), and Extra High Frequency (EHF). The liquid crystal molecules in the liquid crystal layer 114 change their orientation in response to a control signal applied to the patch electrode 108, but their orientation hardly follows the frequency of the radio waves irradiating the patch electrode 108. Therefore, the reflective element 102 can control the phase of the reflected radio waves independently of the radio waves.

[0036] Figure 3 This shows the state where no voltage is applied between the patch electrode 108 and the ground electrode 110 (designated as "state 1"). Figure 3 This illustrates the case where the first alignment film 112a and the second alignment film 112b are horizontally aligned films. In the first state, the long axis of the liquid crystal molecules 116 is horizontally aligned relative to the surfaces of the patch electrode 108 and the ground electrode 110 through the first alignment film 112a and the second alignment film 112b. Figure 4 The diagram shows a state where a control signal (voltage signal) has been applied to the patch electrode 108 (designated as "state 2"). In state 2, the liquid crystal molecules 116 are oriented perpendicularly to the surfaces of the patch electrode 108 and the ground electrode 110 due to the influence of an electric field. The orientation angle of the long axis of the liquid crystal molecules 116 can also be adjusted to a direction intermediate between the horizontal and vertical directions depending on the magnitude of the control signal applied to the patch electrode 108 (the magnitude of the voltage between the counter electrode and the patch electrode).

[0037] When the liquid crystal molecules 116 have positive dielectric anisotropy, the dielectric constant of the second state is larger than that of the first state. Conversely, when the liquid crystal molecules 116 have negative dielectric anisotropy, the apparent dielectric constant of the second state is smaller than that of the first state. The liquid crystal layer 114, having dielectric anisotropy, can also be considered a variable dielectric layer. The reflective element 102 can be controlled using the dielectric anisotropy of the liquid crystal layer 114 to delay (or not delay) the phase of the reflected wave.

[0038] The reflecting element 102 is used in an electromagnetic wave reflector to reflect electromagnetic waves in a predetermined direction. Preferably, the reflecting element 102 minimizes the attenuation of the amplitude of the reflected electromagnetic wave. Figure 2As can be clearly seen from the structure shown, when an electromagnetic wave propagating in the air is reflected by the reflecting element 102, the electromagnetic wave passes through the dielectric substrate 104 twice. The dielectric substrate 104 is formed of a dielectric material such as glass or resin.

[0039] 2. Electron wave reflection device

[0040] Next, the radio wave reflecting device 100, which integrates the reflecting element 102, will be described. (Refer to...) Figures 5-11 An embodiment of the radio wave reflecting device 100 of the present invention will be described. The radio wave reflecting device 100 of the present invention not only has a radio wave reflecting function but also an image display function. First, the radio wave reflecting function of the radio wave reflecting device 100 will be described.

[0041] 2-1. Radio wave reflection function (dual-axis reflection control)

[0042] Figure 5 The configuration of an electromagnetic wave reflection device 100 according to one embodiment of the present invention is shown. In this embodiment, the electromagnetic wave reflection function of the electromagnetic wave reflection device 100 capable of dual-axis reflection control is described.

[0043] The radio wave reflecting device 100 has a radio wave reflecting plate 120. The radio wave reflecting plate 120 is composed of a plurality of reflecting plate base units 121. Each reflecting plate base unit 121 is composed of reflecting elements 102 and switching elements (also called transistors) that control the reflecting elements 102. The plurality of reflecting elements 102 are arranged, for example, in the row direction (…). Figure 5 The X-axis direction shown) and the column direction that intersects the row direction ( Figure 5 The reflective elements 102 are arranged along the Y-axis direction (as shown). The patch electrodes 108 are positioned with their surfaces facing the incident surface of the radio waves. The radio wave reflector 120 is flat, and multiple patch electrodes 108 are arranged in a matrix within the flat surface.

[0044] The electromagnetic wave reflecting device 100 has a structure that integrates multiple reflecting elements 102 onto a dielectric substrate 104. For example... Figure 5 As shown, the radio wave reflecting device 100 has the following structure: a dielectric substrate 104 with a plurality of patch electrodes 108 arranged thereon and a counter substrate 106 with a ground electrode 110 are overlapped, and a liquid crystal layer (not shown) is provided between the two substrates. A radio wave reflecting plate 120 is formed in the area where the plurality of patch electrodes 108 and the ground electrode 110 overlap. When viewed with respect to each patch electrode 108, the cross-sectional structure of the radio wave reflecting plate 120 is similar to... Figure 2 The reflective element 102 shown has the same structure. The dielectric substrate 104 and the opposing substrate 106 are bonded together by a sealing material 128, and a liquid crystal layer (not shown) is disposed in the inner region of the sealing material 128.

[0045] As described above, the reflector base units 121 are arranged along the X-axis and Y-axis directions on the dielectric substrate 104. Furthermore, multiple scan lines 133 extending along the X-axis and multiple signal lines 132 extending along the Y-axis are provided on the dielectric substrate 104. The multiple scan lines 133 are electrically connected to multiple patch electrodes 108 arranged in the X-axis direction. In other words, the multiple patch electrodes 108 arranged in the X-axis direction are connected via the scan lines 133. The multiple signal lines 132 are electrically connected to the multiple patch electrodes 108 arranged in the Y-axis direction. In other words, the multiple patch electrodes 108 arranged in the Y-axis direction are connected via the signal lines 132.

[0046] In addition to the area opposite to the opposing substrate 106, the dielectric substrate 104 also has a peripheral region 122 that extends outward compared to the opposing substrate 106. A first driver IC 123, a second driver IC 124, and a third driver IC 125 are disposed in the peripheral region 122. The terminal portion 126 is a region forming a connection with an external circuit, for example, a flexible printed circuit board (not shown) is connected thereto. Signals controlling each of the first driver IC 123, the second driver IC 124, and the third driver IC 125 are input from the flexible printed circuit board to the terminal portion 126.

[0047] Additionally, a first driving circuit 129 and a second driving circuit 130 are provided on the inner side of the sealing material 128. The first driving circuit 129 and the second driving circuit 130 are connected to a first driving IC 123. The first driving circuit 129 is connected to multiple scan lines 133 and outputs a scan signal to each of the multiple scan lines 133. The second driving IC 124 is connected to multiple signal lines 132 and outputs control signals of different voltage levels to each of the multiple signal lines 132. The multiple scan lines 133 and the multiple signal lines 132 are arranged in a crisscrossing manner separated by an insulating layer (not shown). It should be noted that the first driving IC 123 and the third driving IC 125 control the pixels, which will be described later.

[0048] Figure 5 The radio wave reflecting device 100 shown can control the direction of travel of the reflected wave not only in the left-right direction of the plane with respect to the reflection axis VR, which is parallel to the Y-axis, but also in the up-down direction of the plane with respect to the reflection axis HR, which is parallel to the X-axis. That is, because the radio wave reflecting device 100 has a reflection axis VR parallel to the Y-axis and a reflection axis HR parallel to the X-axis, it can control the reflection angle in the direction of rotation about the reflection axis VR and the reflection axis HR.

[0049] Figure 6The diagram schematically illustrates how the direction of travel of a reflected wave is changed by two reflecting elements 102. It shows that when electromagnetic waves are incident on reflecting elements 102a and 102b with the same phase, because different control signals (V1 ≠ V2) are applied to reflecting elements 102a and 102b, the phase change of the reflected wave caused by reflecting element 102b is greater than that caused by reflecting element 102a. As a result, the phase of the reflected wave R1 reflected by reflecting element 102a is different from the phase of the reflected wave R2 reflected by reflecting element 102b. Figure 6 In the case of reflected wave R2 (which leads the phase of reflected wave R1), the apparent direction of travel of the reflected wave changes to an inclined direction.

[0050] In addition, Figure 6 In this design, since multiple patch electrodes 108 arranged in the Y-axis direction are electrically connected via signal line 132 and thus electrically at the same potential, it might be considered to replace them with a continuous strip-shaped electrode in the Y-axis direction, rather than a segmented shape. However, the size of the patch electrodes 108 is appropriate for the wavelength of the reflected electromagnetic wave, so a strip-shaped electrode would result in decreased sensitivity to the target wavelength, leading to different performance relative to vertically polarized and horizontally polarized waves. Therefore, as... Figure 6 The preferred configuration shown is as follows: the patch electrode 108 is configured in a shape that is symmetrical with respect to both the vertically polarized wave and the horizontally polarized wave. Figure 6 (Showing a square, but it can also be a circle) and configured in an array, multiple patch electrodes 108 arranged parallel to the reflection axis VR are connected by signal lines 132.

[0051] Applying this principle Figure 5 The radio wave reflecting device 100 shown, for example, can control the reflection direction as a single-axis direction or a dual-axis direction by independently controlling the phase change based on the reflecting element in both rows and columns.

[0052] 2-2. Image display function

[0053] Next, refer to Figures 7-11 The image display function of the radio wave reflecting device 100 will be described. Figure 5 The radio wave reflecting device 100 shown has an image display function. Specifically, a plurality of pixels 240 are provided between adjacent reflecting elements 102. By controlling the plurality of pixels 240, an image can be displayed in the radio wave reflecting device 100.

[0054] Figure 7 It is Figure 5 The image shown is a magnified view of the 2x2 reflective element 102 and multiple pixels 240. Figure 7In the description of each of the 2-row × 2-column reflective elements 102, they are referred to as reflective elements 102a to 102d. Furthermore, the constituent elements of the reflective element 102 are also described separately.

[0055] In the reflective element 102, when the length L1 of one side of the patch electrode 108 is, for example, 2.8 mm (the size of the patch electrode is, for example, 2.8 mm × 2.8 mm) and the spacing L2 of the patch electrodes 108 is, for example, 3.7 mm, the gap L3 between adjacent patch electrodes 108 is 0.9 mm. In contrast, the pixel size is 200 μm. 2 ~258700μm 2 (For example, setting the RGB pixel size to 40μm) 2 ~500μm 2 Monochrome pixels are 14μm 2 ~170μm 2 Because the pixel size is smaller than the gap between adjacent patch electrodes 108, multiple pixels 240 can be arranged between adjacent patch electrodes 108. It should be noted that when the frequency of the radio wave increases and the spacing L decreases, the upper limit of the pixel size can also be greater than 258700μm. 2 Small.

[0056] The size of pixel 240 is the same as the size of light-emitting element 220. The size of light-emitting element 220 can be 200μm. 2 ~258700μm 2 Within a suitable range, multiple light-emitting elements 220 can be arranged along the X-axis, along the Y-axis, or along both the X-axis and Y-axis respectively between two adjacent patch electrodes 108. Figure 7 In this process, hundreds of μm gaps are arranged along the X-axis in the patch electrode 108. 2 An example of multiple pixels 240 of the same size will be used for illustration. The area where multiple pixels 240 are located in the gaps between the patch electrodes 108 is also called the display area.

[0057] Pixel 240 is an area equivalent to a display unit capable of controlling the brightness of a single color element (e.g., one of R (red), G (green), or B (blue)). Brightness control within a single pixel is achieved by further dividing the pixel into multiple sub-pixels and controlling the brightness of each sub-pixel. The size of pixel 240 or the size of the light-emitting element can vary depending on the color element. Pixel 240 includes a light-emitting element and pixel circuitry for driving the light-emitting element. For example, an organic EL element or an LED chip can be used as the light-emitting element. In this embodiment, the case where an organic EL element is used as the light-emitting element will be described. The plurality of pixels 240 have a pixel 240R representing red, a pixel 240G representing green, and a pixel 240B representing blue. When describing the colors to be represented separately, they are referred to as pixels 240R, 240G, and 240B respectively. Furthermore, the constituent elements of pixel 240 are also described separately.

[0058] Figure 8 This is a circuit diagram of the reflector base unit 121 and pixel 240 located in the radio wave reflecting device 100. (Example) Figure 8 As shown, the reflector base unit 121 has a transistor 210b and a reflective element 102. The gate electrode of the transistor 210b is connected to the scan line 113, the source electrode is connected to the first wiring 118, and the drain electrode is connected to the patch electrode of the reflective element 102. The common electrode 226 of the reflective element 102 is connected to the common wiring 136.

[0059] like Figure 8 As shown, three pixels 240 are arranged in the row direction. Pixel 240 includes components such as a driving transistor 252, a selection transistor 254, a holding capacitor 256, and a light-emitting element 220. The source electrode of the selection transistor 254 is connected to the signal line 262, and the gate electrode of the selection transistor 254 is connected to the scan line 258. The source electrode of the driving transistor 252 is connected to the anode power line 264, and the drain electrode of the driving transistor 252 is connected to one end of the light-emitting element 220. The other end of the light-emitting element 220 is connected to the cathode power line 268. The gate electrode of the driving transistor 252 is connected to the drain electrode of the selection transistor 254. The holding capacitor 256 is connected to both the gate and drain electrodes of the driving transistor 252. A grayscale signal determining the light intensity of the light-emitting element 220 is supplied to the signal line 262 via the third driving IC 125. A scan signal is supplied to the scan line 258 via the first driving IC 123 and the second driving circuit 130, and this scan signal selects the pixel to be written with the aforementioned grayscale signal.

[0060] In this embodiment, the operation of the reflector base unit 121 and the pixel 240 is controlled by the first driver IC 123 to the third driver IC 125, but the number of driver ICs is not particularly limited. A single driver IC may also be used to control the reflector base unit 121 and the pixel 240.

[0061] 3. Composition of the 100A radio wave reflection device

[0062] Figure 9 This is an example of a cross-sectional view of an electromagnetic wave reflecting device 100a that has both electromagnetic wave reflection and image display functions. Figure 9 In this section, an electromagnetic wave reflecting device 100a is described in which the incident / reflecting surface of the electromagnetic wave is on the dielectric substrate 104 side and the light emission of the light-emitting element 220 is also on the dielectric substrate 104 side (bottom light emission). Furthermore, in Figure 9 In the image, an area where pixels 240 are disposed is shown between areas where adjacent reflector base units 121 are disposed. For example... Figure 9 As shown, reflective elements 102a and 102b, and a light-emitting element 220 disposed in a region separated from reflective elements 102a and 102b are provided on the same substrate. The transistor controlling the reflective element 102 and the transistor controlling the light-emitting element 220 are also disposed on the same substrate.

[0063] 3-1. Pixel Composition

[0064] First, the structure of pixel 240 will be described. Pixel 240 has a transistor 210a disposed on dielectric substrate 104 and a light-emitting element 220 disposed on transistor 210a.

[0065] The dielectric substrate 104 and the opposing substrate 106 can be made of dielectric materials such as glass substrates, quartz substrates, and flexible substrates (polyimide, polyethylene terephthalate, polyethylene naphthalate, triacetyl cellulose, cyclic olefin copolymers, cyclic olefin polymers, and other flexible resin substrates). The electromagnetic wave reflecting device 100a is preferably transparent in order to emit light from the light-emitting element 220 from the dielectric substrate 104 side.

[0066] A base layer 202 is disposed on the dielectric substrate 104. The base layer 202 is an insulating layer composed of inorganic materials such as silicon oxide, silicon nitride, and aluminum oxide. The base layer 202 is not limited to a single layer; for example, it may have a stacked structure combining silicon oxide and silicon nitride layers. Its configuration can be appropriately determined by considering its adhesion to the dielectric substrate 104 and its barrier properties to the transistors 210a and 210b described later.

[0067] A transistor 210a is disposed on the substrate layer 202. The transistor 210a can be either a top-gate or bottom-gate type. Figure 9 In this embodiment, transistor 210a is a top-gate type transistor, comprising: a semiconductor layer 204a disposed on a substrate layer 202, a gate insulating layer 206 covering the semiconductor layer 204a, and a gate electrode 208a disposed on the gate insulating layer 206. Additionally, an interlayer insulating layer 212 covering the gate electrode 208a is provided on transistor 210a. Furthermore, a source electrode 214a and a drain electrode 214b are provided on the interlayer insulating layer 212. The source electrode 214a and the drain electrode 214b are respectively connected to the semiconductor layer 204a. It should be noted that in this embodiment, the interlayer insulating layer 212 is described as a single-layer structure, but the interlayer insulating layer 212 can also be a stacked structure.

[0068] The materials used for each layer constituting transistor 210a can be any known materials, and there are no particular limitations. For example, polycrystalline silicon, amorphous silicon, or oxide semiconductors can typically be used as the semiconductor layer 204a. The gate insulating layer 206 and the interlayer insulating layer 212 are constructed using the same materials as the substrate layer 202, and can be in a single-layer or multi-layer structure. The gate electrode 208a is made of metal materials such as copper, molybdenum, tantalum, tungsten, or aluminum. The source electrode 214a and the drain electrode 214b are made of metal materials such as copper, titanium, molybdenum, or aluminum, respectively.

[0069] exist Figure 9 Although not shown in the diagram, scan lines 258 made of the same metal material as the metal material constituting the gate electrode 208a are provided on the same layer as the gate electrode 208a. Additionally, in Figure 9 Although not shown in the figure, a signal line 262 extending in the direction intersecting with the scan line 258 is provided on the same layer as the source electrode 214a and the drain electrode 214b.

[0070] A planarization film 216 is disposed on transistor 210. The planarization film 216 is composed of an organic resin material. For example, known organic resin materials such as polyimide, polyamide, acrylic acid, and epoxy resin can be used. These materials can be formed into films by solution coating and have the characteristic of high planarization effect. Although not specifically illustrated, the planarization film 216 is not limited to a single-layer structure and can also have a laminated structure of an inorganic insulating layer and a layer containing an organic resin material.

[0071] The planarization film 216 has a contact hole 223a that exposes a portion of the drain electrode 214b. The contact hole 223a is an opening for electrically connecting the pixel electrode 218a (described later) and the drain electrode 214b. Therefore, the contact hole 223a is provided overlapping a portion of the drain electrode 214b. The drain electrode 214b is exposed on the bottom surface of the contact hole 223a.

[0072] A pixel electrode 218a is disposed on the planarization film 216. The pixel electrode 218a is connected to the drain electrode 214b via a contact hole 223a provided in the planarization film 216. In the radio wave reflecting device 100a, the pixel electrode 218a functions as the anode constituting the light-emitting element 220. The pixel electrode 218a is configured differently depending on whether it is a top-emitting or bottom-emitting type. For example, in the case of a top-emitting type, a metal film with high light reflectivity is used as the pixel electrode 218a, or a stacked structure of a transparent conductive layer with high work function, such as an indium oxide transparent conductive layer (e.g., ITO) or a zinc oxide transparent conductive layer (e.g., IZO, ZnO), is used with a metal film. On the other hand, in the case of a bottom-emitting type, an indium oxide transparent conductive layer or a zinc oxide transparent conductive layer is used as the pixel electrode 218a. Figure 9 Since the bottom-emitting type is used, a transparent conductive layer is used as the pixel electrode 218a.

[0073] An insulating layer 222 made of an organic resin material is provided on the pixel electrode 218a. Known resin materials such as polyimide, polyamide, acrylic, epoxy, or siloxane can be used as the organic resin material. The insulating layer 222 has an opening on a portion of the pixel electrode 218a. The insulating layer 222 is provided between adjacent pixel electrodes 218a to cover the ends (edges) of the pixel electrodes 218a, serving as a separator between adjacent pixel electrodes 218a. Therefore, the insulating layer 222 is often referred to as a "partition" or "barrier." A portion of the pixel electrode 218a exposed from the insulating layer 222 becomes the light-emitting area of ​​the light-emitting element 220. It is preferable that the inner wall of the opening of the insulating layer 222 be tapered. This reduces the possibility of poor coverage at the ends of the pixel electrodes 218a during the formation of the light-emitting layer, which will be described later. The insulating layer 222 can also not only cover the end of the pixel electrode 218a, but also serve as a filling material for the recess caused by the contact holes in the planarization film 216.

[0074] An organic layer 224 is disposed on the pixel electrode 218a. The organic layer 224 has at least a light-emitting layer made of organic material and functions as the light-emitting part of the light-emitting element 220. In addition to the light-emitting layer, the organic layer 224 may also include various charge transport layers such as a hole injection layer and / or a hole transport layer, an electron injection layer and / or an electron transport layer. The organic layer 224 is disposed such that it covers the opening of the insulating layer 222 in the light-emitting region.

[0075] It should be noted that in this embodiment, the configuration is as follows: an organic layer 224, including a light-emitting layer that emits light of the desired color, is provided, and organic layers 224 including different light-emitting layers are formed on each pixel electrode 218a, thereby displaying RGB colors. That is, in this embodiment, the light-emitting layers of the organic layer 224 are discontinuous between adjacent pixel electrodes 218a. Furthermore, although not shown, hole injection layers and / or hole transport layers, electron injection layers and / or electron transport layers can be continuously disposed between adjacent pixel electrodes 218a. Known structures and materials can be used as the organic layer 224, and the configuration is not particularly limited to that of this embodiment. Alternatively, the organic layer 224 may also have a light-emitting layer that emits white light, emitting RGB colors through a color filter. In this case, the light-emitting layer can also be continuously disposed on the insulating layer 222. In this case, the color filter only needs to be disposed between the dielectric substrate 104 and the base layer 202.

[0076] A common electrode 226 is disposed on the organic layer 224 and the insulating layer 222. The common electrode 226 functions as the cathode constituting the light-emitting element 220. Figure 9 Since the light-emitting type is bottom-emitting, a metal film with high light reflectivity is used as the common electrode 226.

[0077] The organic layer 224 and the common electrode 226 are shared by multiple pixels 240. That is, the organic layer 224 and the common electrode 226 are disposed throughout the entire display area. Figure 7 In this configuration, the display area corresponds to a plurality of pixels 240 arranged in the X direction. Therefore, the organic layer 224 and the common electrode 226 are arranged in a strip shape in the X direction. Furthermore, the common electrode 226 is positioned from... Figure 5 The first drive circuit 129 shown extends to the second drive circuit 130 in each row. The common electrode 226 arranged in each row can also be connected to each other near the first drive circuit 129 or near the second drive circuit 130. This reduces the resistance of the common electrode 226.

[0078] Figure 10 This is an enlarged image of a 2x2 reflective element and multiple pixels. For example... Figure 10 As shown, although pixels 240 are not provided in the gaps along the Y-axis of the patch electrode 108, common electrodes 226 can still be provided in the gaps along the Y-axis of the patch electrode 108. The common electrodes 226 can also have a grid-like shape that does not overlap with the patch electrode 108. In other words, openings 227 can be provided in the common electrodes 226 in areas overlapping with the patch electrode 108. It should be noted that, although not shown, the organic layer 224 is also preferably not provided in areas overlapping with the patch electrode 108.

[0079] like Figure 9 As shown, an inorganic insulating layer 228, an organic insulating layer 232, and an inorganic insulating layer 234 are provided on the light-emitting element 220. The inorganic insulating layer 228, organic insulating layer 232, and inorganic insulating layer 234 function as a sealing layer 230 to prevent water and oxygen from penetrating the light-emitting element 220. By providing the sealing layer 230 on the light-emitting element 220, water and oxygen can be prevented from penetrating the light-emitting element 220, thereby improving the reliability of the light-emitting element 220. For example, films of silicon nitride, aluminum oxide, or aluminum nitride can be used as the inorganic insulating layer 228 and inorganic insulating layer 234. Furthermore, organic resin materials such as polyimide resin, acrylic resin, epoxy resin, silicone resin, fluororesin, or siloxane resin can be used as the organic insulating layer 232. It should be noted that the sealing film is not limited to the three layers of inorganic insulating layer 228, organic insulating layer 232, and inorganic insulating layer 234 shown above; a combination of inorganic and organic insulating layers can also be used.

[0080] Compared to inorganic materials, the organic material contained in the organic layer 224 is more likely to become a pathway for moisture and oxygen intrusion. Therefore, it is preferable that the organic layer 224 is not exposed in the area where the radio wave reflector 100a is in contact with air. However, compared to organic materials, inorganic insulating materials are less flexible and therefore more prone to cracking. These cracks may become pathways for moisture and oxygen intrusion. To address this, by providing an organic insulating layer 232 at least in the area where the light-emitting element 220 is located, and by providing inorganic insulating layers 228 and 234 in contact in the remaining areas, it is possible to suppress the intrusion of moisture and oxygen while ensuring the flexibility of the radio wave reflector 100.

[0081] The above describes the configuration of pixel 240. Next, the configuration of the reflector base unit 121 will be explained. It should be noted that in the description of the reflector base unit 121, some configurations that are the same as those of pixel 240 are sometimes omitted.

[0082] 3-2. Composition of the basic unit of the reflector

[0083] The reflector base unit 121 has a transistor 210b disposed on a dielectric substrate 104 and a reflective element 102 disposed on the transistor 210b. The reflective element 102 is disposed above the light-emitting element 220.

[0084] Transistor 210b is formed using the same process as transistor 210a. Therefore, the configuration of transistor 210b is the same as that of transistor 210a. Transistor 210b includes: a semiconductor layer 204a disposed on a substrate layer 202, a gate insulating layer 206 covering the semiconductor layer 204b, and a gate electrode 208b disposed on the gate insulating layer 206. Additionally, an interlayer insulating layer 212 covering the gate electrode 208b is provided on transistor 210b. Furthermore, a source electrode 214c and a drain electrode 214d are provided on the interlayer insulating layer 212. The source electrode 214c and the drain electrode 214d are respectively connected to the semiconductor layer 204b.

[0085] Here, the difference between transistor 210b and transistor 210a lies in their size. Transistor 210b is larger than transistor 210a. For example, the channel width / channel length of transistor 210a is 200μm~1200μm / 4μm, while the channel width / channel length of transistor 210b for a pixel is 3μm~10μm / 10μm~200μm. In display devices using organic EL elements, a steady-state current of approximately tens of nA flows through a single pixel. In the saturation region, to stably carry a small current, the channel length increases, while the channel width is kept to the minimum required. The dimensions of transistor 210a and transistor 210b can be appropriately set according to the dimensions of the reflective element 102 and the pixel 240.

[0086] exist Figure 9 Although not shown in the diagram, scan lines 133 are provided on the same layer as the gate electrode 208b, and these scan lines 133 are made of the same metal material as the metal material constituting the gate electrode 208b. Additionally, in Figure 9 Although not shown in the diagram, the signal line 132, which extends in the direction intersecting with the scan line 133, is disposed on the same layer as the source electrode 214c and the drain electrode 214d. That is, the gate electrodes 208a and 208b, the scan line 258, and the scan line 133 are disposed on the gate insulating layer 206. Furthermore, the source electrode 214a, the drain electrode 214b, the source electrode 214c, the drain electrode 214d, the signal line 262, and the signal line 132 are disposed on the interlayer insulating layer 212.

[0087] A connection electrode 218b is provided on the planarization film 216. The connection electrode 218b is formed by the same process as the pixel electrode 218a. The connection electrode 218b is connected to the drain electrode 214d via a contact hole 223b provided in the planarization film 216. An insulating layer 222 is provided on the connection electrode 218b. An opening is provided in the insulating layer 222. An insulating layer 222 is also provided in the area where the reflector base unit 121 is provided. As described above, the organic layer 224 and the common electrode 226 are not formed in the area where the patch electrode 108 is provided. As a result, the influence of the coupling between the patch electrode 218 and the transistor 210b can be reduced.

[0088] An inorganic insulating layer 228 is provided in contact with the insulating layer 222. The inorganic insulating layer 228 covers the side of the opening of the insulating layer 222, and a contact hole 229 is provided such that a portion of the surface of the connecting electrode 218b is exposed. An organic insulating layer 232 is provided on top of the inorganic insulating layer 228. The organic insulating layer 232 is provided in the area overlapping with the inorganic insulating layer 228. Furthermore, the end of the organic insulating layer 232 is located near the opening of the insulating layer 222. By providing the organic insulating layer 232, the patch electrode 108 can be made into a flat surface. An inorganic insulating layer 234 is provided on top of the organic insulating layer 232. The inorganic insulating layer 234 covers the end of the organic insulating layer 232 and is in contact with the inorganic insulating layer 228. This prevents moisture from penetrating from the end of the organic insulating layer 232. Additionally, by providing the sealing layer 230, the influence of coupling between the patch electrode 218 and the transistor 210b can be reduced.

[0089] A patch electrode 108 is disposed on the inorganic insulating layer 234. The patch electrode 108 is in contact with the inorganic insulating layers 228 and 234 and is connected to the connecting electrode 218b. Although not shown, a first alignment film (corresponding to...) is disposed on the patch electrode 108 and the inorganic insulating layer 234. Figure 1 The first orientation film 112a shown.

[0090] The size of the patch electrode 108 is larger than the size of the pixel electrode. The size of the patch electrode 108 is several millimeters. 2 In contrast, the pixel electrode has a size of tens of μm. 2 ~hundreds of μm 2 Therefore, with the patch electrode 108 having a size of 2.8mm, it is 300 to 40,000 times larger than the pixel electrode.

[0091] A counter substrate 106 is disposed opposite to the dielectric substrate 104. A ground electrode 110 is disposed on the counter substrate 106. The ground electrode 110 is disposed on the entire surface of the counter substrate 106. The ground electrode 110 is disposed in a manner that overlaps with the patch electrodes 108 arranged in a matrix. The ground electrode 110 is also disposed in a region that overlaps with the pixel 240 (light-emitting element 220). Although not shown, a second alignment film 112b is disposed on the surface of the ground electrode 110. The dielectric substrate 104 and the counter substrate 106 are disposed opposite to each other with a gap, and the liquid crystal layer 114 is disposed in the region surrounded by a sealing material.

[0092] In the electromagnetic wave reflection device 100a, electromagnetic waves are incident from the dielectric substrate 104 side, reflected by the patch electrode 108, and emitted from the dielectric substrate 104 side. Therefore, it is preferable not to place wiring and transistors that would hinder the propagation of electromagnetic waves between the dielectric substrate 104 and the patch electrode 108. Furthermore, the light emitted by the light-emitting element 220 is emitted from the dielectric substrate 104 side. Therefore, it is preferable not to place wiring and transistors that would reduce the aperture ratio of the pixel 240 between the dielectric substrate 104 and the light-emitting area of ​​the light-emitting element 220.

[0093] Figure 11 This is a layout diagram showing the reflector base unit 121 and pixel 240 as viewed from the dielectric substrate 104 side. Figure 11 In the diagram, transistor 210b, patch electrode 108, scan line 133, and signal line 132 are shown as the base unit 121 of the reflector. Light-emitting elements 220R, 220G, and 220B, scan line 258, and signal lines 262R, 262G, and 262B are shown as pixels 240R, 240G, and 240B. These transistors and wiring are part of the transistors and wiring constituting the radio wave reflecting device 100a; other components are not shown.

[0094] In pixel 240, scan lines 258 and signal lines 262R, 262G, and 262B are preferably arranged in a manner that does not overlap with patch electrodes 108. Scan lines 258 and signal lines 262R, 262G, and 262B are preferably disposed in the gaps between adjacent patch electrodes 108. Signal lines 262G and 262B have regions extending in the Y-axis direction and regions extending in the X-axis direction. By configuring signal lines 262G and 262B in a curved manner within the gaps between adjacent patch electrodes 108, the aperture ratio of pixel 240 can be increased, and the radio wave reflection characteristics can be improved.

[0095] According to one embodiment of the present invention, an electromagnetic wave reflecting device 100a has light-emitting elements 220 disposed in a region separated from each other by reflective elements 102. This allows a display area to be formed in the region separated from each other by reflective elements 102. Consequently, an electromagnetic wave reflecting plate 120 and a display area including a plurality of pixels 240 can be formed on the same substrate. Since the electromagnetic wave reflecting function and the image display function can be integrated, space savings can be achieved compared to the case where both an electromagnetic wave reflecting device and a display device are disposed separately. Furthermore, the region where the pixels 240 are disposed is smaller than the region where the reflective plate base unit 121 is disposed. Therefore, the reflection of electromagnetic waves by the pixels 240 can be suppressed. Thus, the influence of the electromagnetic wave reflecting device 100a on communication area control can be reduced.

[0096] 4. Composition of radio wave reflecting device 100b

[0097] Figure 12 This is an example of a cross-sectional view of an electromagnetic wave reflecting device 100b, which has both electromagnetic wave reflection and image display functions. Figure 12 In this description, an electromagnetic wave reflecting device 100b is provided, in which the incident / reflecting surface of the electromagnetic wave is on the side of the opposing substrate 106, and the light emission of the light-emitting element 220 is also on the side of the opposing substrate 106 (top light emission). Additionally, in Figure 12 In the image, a region containing pixels 240 is shown between areas where adjacent reflector base units 121 are located. For example... Figure 12 As shown, reflective elements 102a and 102b, and a light-emitting element 220 disposed in a region separated from reflective elements 102a and 102b, are provided on the same substrate. The transistor controlling the reflective element 102 and the transistor controlling the light-emitting element 220 are also disposed on the same substrate. The layout of the reflective element 102 and the light-emitting element 220 is described below. Figure 7 Same. In the following description, the differences between the configuration of the light-emitting element 220 and the configuration of the reflective element 102 of the radio wave reflecting device 100a will be explained.

[0098] 4-1. Pixel Composition

[0099] In pixel 240, the drain electrode of transistor 210a is connected to the pixel electrode 218a of light-emitting element 220. Figure 12 The electromagnetic wave reflection device 100b shown uses a top-emitting type light-emitting element 220. Therefore, as the pixel electrode 218a, a stacked structure of a metal film with high light reflectivity, or a transparent conductive layer with high work function such as indium oxide (e.g., ITO) or zinc oxide (e.g., IZO, ZnO) is used. On the other hand, the aforementioned transparent conductive layer is used as the common electrode 226. As a result, the light emitted by the light-emitting element 220 can be emitted from the opposing substrate 106 side.

[0100] 4-2. Composition of a reflective element

[0101] exist Figure 12 In the radio wave reflecting device 100b shown, since the incident / reflecting surface of the radio wave is on the opposing substrate 106 side, a patch electrode 108 is provided on the opposing substrate 106 side. The patch electrode 108 functions as a common electrode for the liquid crystal. The drain electrode 214d of the transistor 210b is connected to the driving electrode 109. The driving electrode 109 is arranged opposite to the rectangular shape of the patch electrode 108. The driving electrode 109 of each reflecting element 102 is provided independently, and adjacent driving electrodes 109 are not connected to each other. The driving electrode 109 is grounded (GND) relative to the radio wave. Thus, radio waves incident from the opposing substrate 106 side can be reflected by the reflecting elements 102 and emitted from the opposing substrate 106 side.

[0102] The dimensions of the patch electrode 108 and the driving electrode 109 are larger than the dimensions of the pixel electrode. The dimensions of the patch electrode 108 are several millimeters. 2 In contrast, the size of the pixel electrode and the size of the driving electrode 109 are tens of μm. 2 ~hundreds of μm 2 .exist Figure 12 Since the light emitted by the light-emitting element 220 is emitted from the side of the opposing substrate 106, it is preferable that the patch electrode 108 and the driving electrode 109 do not overlap with the light-emitting element 220.

[0103] Figure 13 This is a top view of the patch electrode 108 and pixels 240R, 240G, and 240B as viewed from the side of the opposing substrate 106. The patch electrode 108, like the radio wave reflecting device 100a, is rectangular, but adjacent patch electrodes 108 are connected by a first wiring 118. Preferably, pixels 240R, 240G, and 240B are arranged in the gap L3 between adjacent patch electrodes 108 in a manner that does not overlap with the first wiring 118. Figure 13 As shown, pixels 240R, 240G, 240B are preferably arranged such that they sandwich the first wiring 118 extending in the Y-axis direction. By using a top-emitting type light-emitting element 220, transistors and wiring can be arranged on the lower side of the driving electrode 109 (opposite to the direction of electromagnetic wave incident) relative to the electromagnetic wave GND. This reduces the impact on reflection characteristics caused by transistors and wiring. However, since adjacent driving electrodes 109 are not connected to each other, there is concern that gaps may form between the driving electrodes 109 relative to the electromagnetic wave GND, leading to deterioration of reflection characteristics. Therefore, as... Figure 12As shown, by overlapping the common electrode 226 and the driving electrode 109, the gap of the driving electrode 109, which is GND to the radio waves, can be filled.

[0104] According to one embodiment of the present invention, the radio wave reflecting device 100b, similar to the radio wave reflecting device 100a, can form a display area between adjacent reflecting elements 102 and between areas separated from reflecting elements 102. Thus, the radio wave reflecting plate 120 and the display area including a plurality of pixels 240 can be formed on the same substrate. Since the radio wave reflecting function and the image display function can be integrated, space savings can be achieved compared to the case where both a radio wave reflecting device and a display device are provided. Furthermore, the area where the pixels 240 are provided is smaller than the area where the reflector base unit 121 is provided. Therefore, the reflection of radio waves by the pixels 240 can be suppressed. Therefore, the influence of the radio wave reflecting device 100a on the control of the communication area can be reduced.

[0105] [Variation Example]

[0106] This invention is not limited to the embodiments described above, and includes various other modifications. For example, the embodiments described above have been detailed for ease of understanding and explanation of the invention, and are not necessarily limited to having all the described configurations. Additional, deletion, or substitutions may be made to a portion of the configuration of the embodiments and a portion of the modifications described below. The modifications are described below.

[0107] [Variation Example 1]

[0108] exist Figure 12 In this description, an electromagnetic wave reflecting device 100b is provided, in which the incident / reflecting surface of the electromagnetic wave is on the side of the opposing substrate 106 and the light emission of the light-emitting element 220 is also on the side of the opposing substrate 106 (top light emission). Figure 12 A modified example will be described in the case where the incident / reflecting surface of the radio wave is on the side of the opposing substrate 106 and the light emission of the light-emitting element 220 is from the dielectric substrate 104 (bottom light emission).

[0109] exist Figure 12 The electromagnetic wave reflection device 100b shown uses a bottom-emitting type light-emitting element 220. Therefore, as the common electrode 226, a stacked structure of a metal film with high light reflectivity, or a transparent conductive layer with high work function such as indium oxide (e.g., ITO) or zinc oxide (e.g., IZO, ZnO) and a metal film is used. On the other hand, the aforementioned transparent conductive layer is used as the pixel electrode 218a. This allows the light emitted by the light-emitting element 220 to be emitted from the dielectric substrate 104 side. Furthermore, the reflector base unit 121, as shown in... Figure 12 The structure is explained in the text, therefore detailed explanations are omitted.

[0110] With the incident / reflecting surface of the radio wave on the opposing substrate 106 side and the light emission of the light-emitting element 220 originating from the dielectric substrate 104 (bottom light emission), the top view of the patch electrode 108 and pixels 240R, 240G, and 240B viewed from the opposing substrate 106 side is as follows: Figure 11 The same applies. As long as the light-emitting area of ​​the light-emitting element 220 does not overlap with the wiring or electrodes constituting the pixel circuit, or the wiring or electrodes constituting the reflective element, the pixels 240R, 240G, and 240B can be configured in any way.

[0111] According to the radio wave reflecting device described in Modification 1, similar to radio wave reflecting devices 100a and 100b, a display area can be formed in the area separated from each other by the adjacent reflective elements 102. Furthermore, the incident / reflecting surface of the radio wave can be on the side of the opposing substrate 106, and the light emission of the light-emitting element 220 can be on the side of the dielectric substrate 104. Thus, the incident / reflecting surface of the radio wave and the light-emitting surface of the light-emitting element 220 can be different. Therefore, the reflection of radio waves by the pixel 240 can be suppressed. Thus, the influence of the radio wave reflecting device 100a on the control of the communication area can be reduced. The other configurations are the same as those of radio wave reflecting devices 100a and 100b, and therefore the same effect is achieved in the radio wave reflecting device described in Modification 1.

[0112] [Variation Example 2]

[0113] The layout of pixel 240 shown in this embodiment is merely an example. As long as the light-emitting area of ​​the light-emitting element 220 does not overlap with the wiring or electrodes constituting the pixel circuit, or the wiring or electrodes constituting the reflective element, any arrangement is acceptable. Alternatively... Figure 13 The layout of pixels 240R, 240G, and 240B shown is applied to Figure 9 The radio wave reflecting device 100a shown. Alternatively, it can also be... Figure 7 The layout of pixels 240R, 240G, and 240B shown is applied to Figure 12 The radio wave reflecting device 100b is shown. Additionally, in... Figure 7 and Figure 13 The example provided illustrates the configuration of pixels 240R, 240G, and 240B along the X-axis, but it is also possible to configure them along the Y-axis, or along both the X-axis and Y-axis.

[0114] In addition, such as Figure 7 and Figure 13 The diagram illustrates a layout where pixels 240R, 240G, and 240B are arranged in a single row, but it can also be arranged in multiple rows or columns. Figure 14This is a top view of the patch electrodes 108 and pixels 240R, 240G, and 240B as viewed from the side of the opposing substrate 106. Pixels 240R, 240G, and 240B are preferably arranged in the gaps L3 between adjacent patch electrodes 108 in a manner that does not overlap with the first wiring 118. Figure 14 As shown, pixels 240R, 240G, 240B are preferably configured such that they are sandwiched between the first wiring 118 extending in the X-axis direction. Figure 14 The example shown is an example of setting two rows of pixels 240R, 240G, and 240B along the X-axis.

[0115] Figure 15 This is a top view of the patch electrode 108 and pixels 240R, 240G, and 240B as observed from the side of the opposing substrate 106. Figure 15 In the image, columns of pixels 240R, 240G, and 240B are shown in the gap L3 between adjacent patch electrodes 108. This enables the radio wave reflecting device 100 to display higher-resolution images.

[0116] As an embodiment of the present invention, the radio wave reflecting device 100 can be appropriately combined as long as they do not contradict each other. Furthermore, any solution obtained by those skilled in the art by appropriately adding, deleting, or modifying constituent elements or by adding, omitting, or changing conditions based on the driving method of the radio wave reflecting device 100 disclosed in this specification and drawings, as long as it captures the essence of the present invention, is also included within the scope of the present invention.

[0117] Even if other effects differ from those of the embodiments disclosed in this specification, effects that are clearly defined from the description in this specification or that can be easily predicted by those skilled in the art should be understood as being caused by the present invention.

[0118] Explanation of reference numerals in the attached figures

[0119] 100, 100a~100c: Radio wave reflecting device; 102: Reflecting element; 102a~102d: Reflecting element; 104: Dielectric substrate; 106: Opposing substrate; 108: Patch electrode; 109: Driving electrode; 110: Ground electrode; 112a: First alignment film; 112b: Second alignment film; 114: Liquid crystal layer; 116: Liquid crystal molecules; 118: First wiring; 120: Radio wave reflecting plate; 1 21: Reflector base unit; 122: Peripheral area; 123: First driver IC; 124: Second driver IC; 125: Third driver IC; 126: Terminal section; 128: Sealing material; 129: First driver circuit; 130: Second driver circuit; 132: Signal line; 133: Scan line; 134: Switching element; 136: Common wiring; 202: Substrate layer; 204a: Semiconductor layer; 204b: Semiconductor... Body layer, 206: Gate insulating layer, 208a: Gate electrode, 208b: Gate electrode, 210a: Transistor, 210b: Transistor, 212: Interlayer insulating layer, 214a: Source electrode, 214b: Drain electrode, 214c: Source electrode, 214d: Drain electrode, 216: Planarization film, 218a: Pixel electrode, 218b: Connector electrode, 220: Light-emitting element, 222: Insulating layer, 223a: Contact hole, 2 23b: Contact hole, 224: Organic layer, 226: Common electrode, 227: Opening, 228: Inorganic insulating layer, 229: Contact hole, 230: Sealing layer, 232: Organic insulating layer, 234: Inorganic insulating layer, 240: Pixel, 252: Driving transistor, 254: Selecting transistor, 256: Holding capacitor, 258: Scan line, 262: Signal line, 264: Anode power line, 268: Cathode power line.

Claims

1. An electromagnetic wave reflecting device, comprising: Multiple reflective elements are arranged at predetermined intervals in a first direction and in a second direction intersecting the first direction; and Multiple light-emitting elements are arranged in areas separated by the multiple reflective elements. The reflective element includes: A patch electrode is disposed on the first substrate; A ground electrode is disposed on a second substrate opposite to the first substrate and overlapping the patch electrode; and The liquid crystal layer between the patch electrode and the ground electrode. The light-emitting element includes: The first electrode is disposed on the first substrate; The second electrode is disposed on the first substrate; and An organic light-emitting layer sandwiched between the first electrode and the second electrode.

2. The radio wave reflecting device according to claim 1, wherein, Including a first transistor and a second transistor disposed on the first substrate, The first transistor is connected to the patch electrode, and the second transistor is connected to the first electrode.

3. The radio wave reflecting device according to claim 1, wherein, The first electrode is transparent and functions as a pixel electrode. The second electrode reflects light and functions as a common electrode.

4. The radio wave reflecting device according to claim 1, wherein, The size of the patch electrode is larger than the size of the first electrode.

5. The radio wave reflecting device according to claim 1, wherein, The grounding electrode overlaps with the light-emitting element.

6. The radio wave reflecting device according to claim 1, wherein, The second electrode does not overlap with the patch electrode.

7. An electromagnetic wave reflecting device, comprising: Multiple reflective elements are arranged at predetermined intervals in a first direction and in a second direction intersecting the first direction; and Multiple light-emitting elements are arranged in areas separated by the multiple reflective elements. The reflective element includes: A driving electrode is provided on the first substrate; A patch electrode disposed on a second substrate opposite to the first substrate and overlapping the driving electrode; and The liquid crystal layer between the driving electrode and the patch electrode. The light-emitting element includes: The first electrode is disposed on the first substrate; The second electrode is disposed on the first substrate; and An organic light-emitting layer sandwiched between the first electrode and the second electrode.

8. The radio wave reflecting device according to claim 7, wherein, Including a first transistor and a second transistor disposed on the first substrate, The first transistor is connected to the driving electrode, and the second transistor is connected to the first electrode.

9. The radio wave reflecting device according to claim 7, wherein, The first electrode reflects light and functions as a pixel electrode. The second electrode is transparent and functions as a common electrode.

10. The radio wave reflecting device according to claim 7, wherein, The first electrode is transparent and functions as a pixel electrode. The second electrode reflects light and functions as a common electrode.

11. The radio wave reflecting device according to claim 7, wherein, The dimensions of the driving electrode and the patch electrode are larger than the dimensions of the first electrode.

12. The radio wave reflecting device according to claim 7, wherein, The driving electrode and the patch electrode do not overlap with the light-emitting element.

13. The radio wave reflecting device according to claim 7, wherein, The patch electrode is connected to the adjacent patch electrode via the first wiring. The first wiring does not overlap with the light-emitting element.

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