Sensing device

Abstract

This disclosure provides a sensing device, comprising: a first pixel including a first SPAD unit configured to sense light in a first wavelength range to measure depth, wherein the first SPAD unit includes one or more SPADs; a second pixel including a second SPAD unit configured to sense light in a second wavelength range, wherein the second SPAD unit includes one or more SPADs; and a voltage source coupled to the first SPAD unit and the second SPAD unit, configured to apply a first bias voltage to the SPADs of the first SPAD unit and a second bias voltage to the SPADs of the second SPAD unit, wherein the first bias voltage is different from the second bias voltage. Through embodiments of this disclosure, depth information can be measured, and other information about the surrounding environment can also be sensed. Furthermore, by making the first bias voltage different from the second bias voltage, overall power consumption and heat generation can be effectively controlled while meeting measurement requirements.

Description

Technical Field

[0001] This disclosure relates to the field of photoelectric detection, and more particularly to a sensing device. Background Technology

[0002] Single-photon avalanche diodes (SPADs) are commonly used detectors, offering advantages such as high sensitivity, high sampling rate, and high integration. They are frequently used as photon detection devices in lidar systems to detect the distance to objects in the environment based on time-of-flight (ToF). SPADs can also be used to sense ambient light.

[0003] The operating parameters of a SPAD are related to the reverse bias voltage applied across its terminals. For example, increasing the reverse bias voltage across a SPAD increases its photon detection efficiency (PDE) and temporal resolution, but also increases its power consumption and heat generation.

[0004] Therefore, how to adjust the overall power consumption and heat generation of SPAD while meeting its performance requirements is a problem that the industry urgently needs to solve. Summary of the Invention

[0005] To address one or more deficiencies in the prior art, this disclosure provides a sensing device, comprising:

[0006] A first pixel, the first pixel including a first SPAD unit configured to sense light in a first wavelength range to measure depth, wherein the first SPAD unit includes one or more SPADs;

[0007] A second pixel, the second pixel including a second SPAD unit configured to sense light in a second wavelength range, wherein the second SPAD unit includes one or more SPADs; and

[0008] A voltage source, coupled to the first SPAD unit and the second SPAD unit, is configured to apply a first bias voltage to the SPADs of the first SPAD unit and a second bias voltage to the SPADs of the second SPAD unit.

[0009] The first bias voltage is different from the second bias voltage.

[0010] Optionally, the first pixel further includes a first filter disposed on one side of the first SPAD unit, the first filter being configured to allow light of the first wavelength range to pass through and be incident on the first SPAD unit.

[0011] Optionally, the second pixel includes a second filter disposed on one side of the second SPAD unit, the second filter being configured to allow light of a second wavelength range to pass through and be incident on the second SPAD unit.

[0012] Optionally, the voltage source includes a first voltage source, a second voltage source, a third voltage source, and a fourth voltage source, wherein a first terminal of the SPAD of the first SPAD unit is coupled to the first voltage source, a second terminal of the SPAD of the first SPAD unit is coupled to the second voltage source, a first terminal of the SPAD of the second SPAD unit is coupled to the third voltage source, and a second terminal of the SPAD of the second SPAD unit is coupled to the fourth voltage source.

[0013] Optionally, the first bias voltage being different from the second bias voltage includes at least one of the following:

[0014] The voltage of the first voltage source is different from the voltage of the third voltage source;

[0015] The voltage of the second voltage source is different from the voltage of the fourth voltage source.

[0016] Optionally, the sensing device includes a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are uniformly distributed among the plurality of second pixels.

[0017] Optionally, the sensing device includes a plurality of first pixels and a plurality of second pixels, wherein the first pixels are surrounded by 4-8 second pixels, or the second pixels are surrounded by 2-5 first pixels.

[0018] Optionally, the first SPAD unit of the first pixel and the second SPAD unit of the second pixel are formed on the same circuit layer.

[0019] Optionally, the second wavelength range includes a first sub-band, a second sub-band, or a third sub-band, and the second pixel includes any one of a first sub-pixel, a second sub-pixel, and a third sub-pixel, wherein the first sub-pixel includes a first sub-filter configured to allow light of the first sub-band to pass through; the second sub-pixel includes a second sub-filter configured to allow light of the second sub-band to pass through; and the third sub-pixel includes a third sub-filter configured to allow light of the third sub-band to pass through.

[0020] Optionally, the second bias voltage applied to the first sub-pixel, the second bias voltage applied to the second sub-pixel, and the third bias voltage applied to the third sub-pixel are different from each other.

[0021] Optionally, the second wavelength range is the first sub-wavelength range, the second sub-wavelength range, or the third sub-wavelength range.

[0022] Optionally, the first bias voltage is higher than the second bias voltage.

[0023] Optionally, the first bias voltage is lower than the second bias voltage.

[0024] Optionally, the sensing device further includes a controller configured to adjust at least one of the first bias voltage or the second bias voltage according to at least one of the measurement parameters or environmental parameters.

[0025] Optionally, the voltage source includes a first sub-voltage source and a second sub-voltage source, wherein the SPAD of the first SPAD unit is coupled to the first sub-voltage source via a first switch, and the SPAD of the first SPAD unit is coupled to the second sub-voltage source via a second switch, and the controller is configured to determine the on and off states of the first switch and the second switch based on at least one of the measured parameters or environmental parameters.

[0026] Optionally, the voltage source includes a third sub-voltage source and a fourth sub-voltage source, wherein the SPAD of the second SPAD unit is coupled to the third sub-voltage source via a third switch, and the SPAD of the second SPAD unit is coupled to the fourth sub-voltage source via a fourth switch, and the controller is configured to determine the on and off states of the third and fourth switches based on at least one of the measured parameters or environmental parameters.

[0027] Optionally, the voltage source includes a third sub-voltage source, wherein the SPAD of the second SPAD unit is coupled to the third sub-voltage source via a third switch, and the SPAD of the third SPAD unit is coupled to the second sub-voltage source via a fourth switch, and the controller is configured to determine the on and off states of the third and fourth switches based on at least one of the measured parameters or environmental parameters.

[0028] Optionally, the environmental parameters include ambient light intensity, which the controller determines based on the signal output by the second SPAD unit.

[0029] Optionally, the sensing device further includes a processor configured to determine information about the surrounding environment based on signals output by the first and second pixels.

[0030] Optionally, the processor is configured to determine color information based at least on the signal output by the second pixel.

[0031] Optionally, the sensing device further includes an emitter configured to emit a light beam with a wavelength within the first wavelength range, and the processor configured to determine depth information based on the emission time of the light beam and the reception time of the first pixel receiving light within the first wavelength range.

[0032] This disclosure also provides a sensing device, including:

[0033] A third pixel, the third pixel comprising a third SPAD unit, wherein the third SPAD unit comprises one or more SPADs; and

[0034] A voltage source, coupled to the third SPAD unit and configured to apply a third bias voltage or a fourth bias voltage to the SPAD of the third SPAD unit, such that the third pixel operates in a first mode or a second mode, wherein in the first mode, the third SPAD unit senses light in a first wavelength range to measure depth, and in the second mode, the third SPAD unit senses light in a second wavelength range to generate a pattern, wherein the third bias voltage is different from the fourth bias voltage.

[0035] The sensing device including SPAD according to the embodiments of this disclosure can not only measure depth information through the first pixel, but also sense other information of the surrounding environment through the second pixel, including but not limited to color information, light intensity information, etc., and by making the first bias voltage different from the second bias voltage, the overall power consumption and heat generation of the sensing device can be effectively controlled while meeting the measurement requirements. Attached Figure Description

[0036] The accompanying drawings are provided to further understand the present disclosure and form part of the specification. They are used together with the embodiments of the present disclosure to explain the present disclosure and do not constitute a limitation thereof.

[0037] Figure 1A A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0038] Figure 1B A schematic diagram of the first and second pixels in the sensing device is shown.

[0039] Figure 2 A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0040] Figure 3 A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0041] Figure 4A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0042] Figure 5A and Figure 5B A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0043] Figure 6A An unfolded view of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0044] Figure 6B It shows Figure 6A A side view of a portion of the SPAD unit in the sensing device shown.

[0045] Figure 7 A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0046] Figure 8 A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0047] Figure 9A and Figure 9B A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0048] Figure 10 A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown.

[0049] Figure 11 A schematic diagram of an exemplary sensing device consistent with some embodiments of this disclosure is shown. Detailed Implementation

[0050] In the following description, only certain exemplary embodiments are shown. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the scope of this disclosure. Therefore, the drawings and description are to be considered exemplary in nature and not restrictive.

[0051] In the description of this disclosure, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this disclosure, "a plurality of" means two or more, unless otherwise explicitly and specifically defined.

[0052] In the description of this disclosure, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joint" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections, electrical connections, or connections that allow for communication; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0053] In this disclosure, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0054] In this disclosure, the terms "or" and "and / or" describe the relationship between related objects and indicate a non-exclusive inclusion. For example, "A and / or B" and "A or B" can include: the presence of only "A", the presence of only "B", and the presence of both "A" and "B", where "A" and "B" can be singular or plural. As another example, "A, B, and / or C" and "A, B, or C" can include: the presence of only "A", the presence of only "B", the presence of only "C", the presence of both "A" and "B", the presence of both "A" and "C", the presence of both "B" and "C", and the presence of both "A", "B", and "C", where "A", "B", and "C" can be singular or plural. Furthermore, the symbol " / " in this disclosure indicates an "or" relationship between the related objects before and after the symbol. In this disclosure, the term "at least one A or B" has the same meaning as "A or B" described above. The term "at least one A, B or C" has the same meaning as "A, B or C" above.

[0055] The following disclosure provides numerous different embodiments or examples for implementing various structures of this disclosure. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the scope of this disclosure. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific examples of processes and materials are provided in this disclosure, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0056] The embodiments of this disclosure are described below with reference to the accompanying drawings. It should be understood that the embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.

[0057] Some embodiments of this disclosure provide a sensing device. The sensing device includes a first pixel, a second pixel, and a voltage source. The first pixel includes a first SPAD unit capable of sensing light in a first wavelength range to measure depth. The second pixel includes a second SPAD unit capable of sensing light in a second wavelength range. The first and second SPAD units each include one or more SPADs. The voltage source is coupled to the first and second SPAD units and can apply a first bias voltage to the SPADs of the first SPAD unit and a second bias voltage to the SPADs of the second SPAD unit. The first bias voltage is different from the second bias voltage.

[0058] The SPAD-included sensing device according to embodiments of this disclosure can measure depth information using a first pixel and sense other information about the surrounding environment, including but not limited to color information and light intensity information, using a second pixel. Furthermore, by making the first bias voltage different from the second bias voltage, the overall power consumption and heat generation of the sensing device can be effectively controlled while meeting measurement requirements. A detailed description is provided below with reference to the accompanying drawings.

[0059] Figure 1A A schematic diagram of an exemplary sensing device 100 consistent with some embodiments of this disclosure is shown. Figure 1B A schematic diagram of the first pixel and the second pixel in the sensing device 100 is shown.

[0060] like Figure 1A As shown, the sensing device 100 includes a first pixel 101, a second pixel 103, and a voltage source 105. The voltage source 105 is coupled to the first pixel 101 and the second pixel 103, thereby providing an operating voltage to the first pixel 101 and the second pixel 103.

[0061] like Figure 1B As shown, the first pixel 101 includes a first SPAD unit 107, and the second pixel 103 includes a second SPAD unit 109. The first SPAD unit 107 can sense light in a first wavelength range for depth measurement. The second SPAD unit 109 can sense light in a second wavelength range. The first SPAD unit 107 or the second SPAD unit 109 includes one or more SPADs. Figure 1B The illustration shows a scenario where the first SPAD unit 107 and the second SPAD unit 109 comprise a 3x3 SPAD array, but this disclosure is not limited thereto. The first SPAD unit 107 or the second SPAD unit 109 may also comprise a single SPAD, or may comprise SPAD arrays with other numbers of rows and columns, such as 1x3, 2x3, 2x4, 2x5, and other SPAD arrays with different numbers of rows and columns. Furthermore, the first SPAD unit 107 and the second SPAD unit 109 may have SPAD arrays with the same number of rows and columns, or they may have SPAD arrays with different numbers of rows and columns.

[0062] The number of SPADs in the first SPAD unit 107 and the second SPAD unit 109 can be determined according to system requirements. For example, when it is necessary to improve the dynamic range, the number of SPADs in the SPAD unit can be increased, and the light signal incident on the SPAD unit can be determined based on the output of multiple SPADs. This can obtain a clear response signal in low-light environments, thereby improving the dynamic range of the SPAD unit. When it is necessary to improve the spatial resolution, the number of SPADs in the SPAD unit can be reduced, thereby reducing the pixel size and improving the spatial resolution.

[0063] like Figure 1A and Figure 1B As shown, the voltage source 105 is coupled to the first SPAD unit 107 of the first pixel 101 and the second SPAD unit 109 of the second pixel 103, and can apply a first bias voltage Vb1 to the SPAD of the first SPAD unit 107 and a second bias voltage Vb2 to the SPAD of the second SPAD unit 109. The first bias voltage Vb1 is different from the second bias voltage Vb2. The first bias voltage Vb1 can be greater than the second bias voltage Vb2 or less than the second bias voltage Vb2. Different embodiments of this disclosure will be described in detail below.

[0064] Figure 2 A schematic diagram of an exemplary sensing device 200 consistent with some embodiments of this disclosure is shown, including a first pixel 201 and a second pixel 203. The first pixel 201 includes a first SPAD unit 207, and the second pixel 203 includes a second SPAD unit 209. The first pixel 201 may be as follows: Figure 1A and Figure 1B The first pixel 101 and the second pixel 203 in the illustrated embodiment can be as follows: Figure 1A and Figure 1B The second pixel 103 of the illustrated embodiment, the first SPAD unit 207 can be as follows: Figure 1A and Figure 1B The first SPAD unit 107 and the second SPAD unit 209 of the illustrated embodiment can be as follows: Figure 1A and Figure 1B The second SPAD unit 109 of the illustrated embodiment.

[0065] like Figure 2 As shown, according to an embodiment of this disclosure, the first pixel 201 further includes a first filter 211 disposed on one side of the first SPAD unit 207. The first filter 211 is disposed on the side of the first SPAD unit 207 that receives the incident light beam. The first filter 211 allows light within the first wavelength range wb1 to pass through and be incident on the first SPAD unit 207. Figure 2As shown, the light incident on the first pixel 201 includes light with wavelengths within the first wavelength range wb1 and light with wavelengths outside the first wavelength range wb1. The first filter 211 allows only light with wavelengths within the first wavelength range wb1 to pass through and be incident on the first SPAD unit 207. Light with wavelengths outside the first wavelength range wb1 is blocked by the first filter 211 and cannot be transmitted. The first SPAD unit 207 senses the light within the first wavelength range wb1 and outputs an electrical signal, which can be used to determine the time-of-flight (ToF). The first wavelength range is, for example, 905nm ± 5nm, or 905nm ± 10nm, or 905nm ± 40nm, or 905nm ± 60nm, or 905nm ± 100nm, or 1550nm ± 5nm, or 1550nm ± 10nm, or 1550nm ± 40nm, or 1550nm ± 60nm, or 1550nm ± 100nm. Figure 2 When the exemplary sensing device 200 shown is used with a lidar, the first wavelength range can be determined based on the wavelength of the lidar's detection beam. For example, when the lidar uses a 905nm detection beam, the first wavelength range can be, for example, 905nm ± 5nm, 905nm ± 10nm, 905nm ± 40nm, 905nm ± 60nm, or 905nm ± 100nm. This ensures that the first SPAD unit 207 of the first pixel 201 only receives echoes within the first wavelength range of the lidar's detection beam. Beams of other wavelengths outside the first wavelength range are blocked by the first filter 209, thus improving the signal-to-noise ratio of the lidar's detection signal. When used with a lidar, the distance to obstacles in the environment can be determined by determining the time difference between the moment the first pixel 201 receives the echo and the moment the lidar emits the detection beam.

[0066] Those skilled in the art will understand that, in the context of this disclosure, "allowing" or "transmitting" means that the transmittance of light within a certain wavelength range is greater than a preset threshold, such as 99%, 95%, 90%, 85%, 80%, or 70%. Similarly, in the context of this disclosure, "blocking" means that the transmittance of light within a certain wavelength range is less than a preset threshold, such as 1%, 5%, 10%, 15%, 20%, or 30%.

[0067] Furthermore, those skilled in the art will understand that Figure 2The first filter 211 shown can be omitted. Even with the first filter 211 omitted, the flight time can still be determined. For example, when the first filter 211 is omitted, the flight time and obstacle distance can be determined based on the signal output by the first SPAD unit 207 during periods of relatively low ambient light (e.g., at night). Furthermore, when the first filter 211 is omitted, subsequent signal processing circuitry can also filter the signal output by the first SPAD unit 207 to remove the ambient light component, thereby obtaining an effective echo signal.

[0068] like Figure 2 As shown, according to an embodiment of this disclosure, the second pixel 203 includes a second filter 213 disposed on one side of the second SPAD unit 209, for example, disposed on the side of the second SPAD unit 209 that receives the incident light beam. The second filter 213 allows light with wavelengths in a second wavelength range to pass through and be incident on the second SPAD unit 209. Figure 2 As shown, the light incident on the second pixel 203 includes light with wavelengths within the second wavelength range wb2 and light with wavelengths outside the second wavelength range wb2. The second filter 213 can only allow light with wavelengths within the second wavelength range wb2 to pass through and be incident on the second SPAD unit 209, while light with wavelengths outside the second wavelength range wb2 will be blocked by the second filter 213 and cannot be transmitted. According to embodiments of this disclosure, the second wavelength range can be a wavelength range of one or more colors of visible light, or a wavelength range including multiple colors of visible light, so that the second SPAD unit 209 of the second pixel 203 can sense the ambient brightness. Specific embodiments will be described in detail below. Furthermore, the second wavelength range of this disclosure is not limited to one or more of the red, green, and blue wavelength ranges; other wavelength ranges can be used, for example, to achieve multispectral imaging through a custom color filter array (CFA).

[0069] in addition, Figure 2 Although the voltage source is not shown, those skilled in the art will understand that the sensing device 200 also includes the same or similar voltage source as the voltage source 105 shown in the embodiment of FIG1. ​​This voltage source is coupled to the first SPAD unit 207 of the first pixel 201 and the second SPAD unit 209 of the second pixel 203, and can apply a first bias voltage Vb1 to the SPAD of the first SPAD unit 207 and a second bias voltage Vb2 to the SPAD of the second SPAD unit 209, wherein the first bias voltage Vb1 is different from the second bias voltage Vb2.

[0070] Figure 3A schematic diagram of an exemplary sensing device 300 consistent with some embodiments of this disclosure is shown, including a first pixel 301 and a second pixel 303. The first pixel 301 includes a first SPAD unit 307, and the second pixel 303 includes a second SPAD unit 309. The first pixel 301 may be as follows: Figure 1A , Figure 1B and Figure 2 In the illustrated embodiment, the first pixels 101 and 201, and the first SPAD unit 307 can be as follows: Figure 1A , Figure 1B and Figure 2 The first SPAD units 107 and 207, and the second SPAD unit 309 in the illustrated embodiment can be as follows: Figure 1A , Figure 1B and Figure 2 The second SPAD units 109 and 209 in the illustrated embodiment.

[0071] like Figure 3 As shown, according to an embodiment of this disclosure, the filter of the second pixel 303 can be omitted, thus allowing incident light of multiple wavelengths to reach the second SPAD unit 309. In this case, the second wavelength range may include multiple bands, such as the visible light band, infrared light band, ultraviolet light band, etc. Figure 3 In the illustrated embodiment, the second pixel 303 does not include a filter, and the second SPAD unit 309 can receive light beams of different wavelengths. Therefore, in low-light environments, the second SPAD unit 309 of the second pixel 303 can capture more photons, achieving higher detection efficiency. Furthermore, the output signal of the second pixel 303 can directly reflect the total intensity of the incident light and changes in light intensity within the scene.

[0072] Figure 3 The sensing device 300 shown also includes a voltage source (not shown). This voltage source is coupled to a first SPAD unit 307 of the first pixel 301 and a second SPAD unit 309 of the second pixel 303, and can apply a first bias voltage Vb1 to the SPAD of the first SPAD unit 307 and a second bias voltage Vb2 to the SPAD of the second SPAD unit 309, wherein the first bias voltage Vb1 is different from the second bias voltage Vb2.

[0073] Figure 4 A schematic diagram of an exemplary sensing device 400 consistent with some embodiments of this disclosure is shown, including a first pixel and a second pixel. The first pixel includes a first SPAD unit, which includes a first SPAD 415. The second pixel includes a second SPAD unit, which includes a second SPAD 417. The first pixel may be, for example,... Figure 1A , Figure 1B and Figure 2 The first pixels 101 and 201 of the illustrated embodiment, the second pixel can be as follows: Figure 1A , Figure 1B and Figure 2 In the illustrated embodiment, the second pixels 103 and 203, the first SPAD unit can be as follows: Figure 1A , Figure 1B and Figure 2 The first SPAD unit 107, 207 of the illustrated embodiment, the second SPAD unit may be as follows: Figure 1A , Figure 1B and Figure 2 The second SPAD unit 109, 209 of the illustrated embodiment.

[0074] Figure 4 The first SPAD 415 and the second SPAD 417 are used as examples for illustrative purposes. The same applies to cases where the first SPAD unit and the second SPAD unit include multiple SPADs.

[0075] In circuitry, a SPAD can be simplified to the form of a photodiode. When performing photon detection, it is placed under a reverse bias voltage (i.e., the voltage of the cathode of the photodiode is higher than the voltage of the anode), and the reverse bias voltage is made greater than its avalanche breakdown voltage. When an incident photon is received, an avalanche effect can be generated.

[0076] like Figure 4 As shown, the voltage sources include a first voltage source 419, a second voltage source 421, a third voltage source 423, and a fourth voltage source 425. The first terminal (e.g., anode) of the first SPAD 415 of the first SPAD unit is coupled to the first voltage source 419, and its voltage is U1. The second terminal (e.g., cathode) of the first SPAD 415 of the first SPAD unit is coupled to the second voltage source 421, and its voltage is U2. The first terminal (e.g., anode) of the second SPAD 417 of the second SPAD unit is coupled to the third voltage source 423, and its voltage is U3. The second terminal (e.g., cathode) of the second SPAD 417 of the second SPAD unit is coupled to the fourth voltage source 425, and its voltage is U4.

[0077] exist Figure 4 In the illustrated embodiment, a first bias voltage Vb1 = U2 - U1 is applied to the first SPAD 415 of the first SPAD unit by a voltage source, and a second bias voltage Vb2 = U4 - U3 is applied to the second SPAD 417 of the second SPAD unit.

[0078] According to embodiments of this disclosure, the first bias voltage Vb1 can be made different from the second bias voltage Vb2 in different ways, including at least one of the following:

[0079] The voltage U1 of the first voltage source 419 is different from the voltage U3 of the third voltage source 423;

[0080] The voltage U2 of the second voltage source 421 is different from the voltage U4 of the fourth voltage source 425.

[0081] According to embodiments of this disclosure, the first voltage source 419 and the third voltage source 423 can be the same, i.e., voltages U1 and U3 are equal. In this case, the voltage U2 of the second voltage source 421 is different from the voltage U4 of the fourth voltage source 425.

[0082] According to embodiments of this disclosure, such as Figure 4 As shown, the first SPAD 415 of the first SPAD unit and the second SPAD 417 of the second SPAD unit are coupled to the second voltage source and the fourth voltage source respectively through a quenching resistor and a switch. Figure 4 In this configuration, the second terminal (e.g., cathode) of the first SPAD 415 of the first SPAD unit is coupled to a second voltage source 421 via a quenching resistor R1 and a switch K1. Switch K1 controls whether a voltage U2 from the second voltage source 421 is applied to the second terminal (e.g., cathode) of the first SPAD 415. When switch K1 is on, the voltage U2 from the second voltage source 421 is applied to the second terminal (e.g., cathode) of the first SPAD 415 through the quenching resistor R1, and the first SPAD 415 operates in a Geiger state, thus enabling it to respond to avalanche photons incident upon it. When switch K1 is off, the voltage U2 from the second voltage source 421 is disconnected from the second terminal (e.g., cathode) of the first SPAD 415, and the first SPAD 415 cannot operate in a reverse bias state, thus failing to respond to avalanche photons incident upon it.

[0083] According to embodiments of this disclosure, such as Figure 4 As shown, an output signal S1 (e.g., a voltage signal) is drawn from the second terminal (e.g., cathode) of the first SPAD 415 of the first SPAD unit. When the first SPAD 415 operates in Geiger mode, photons incident on it will trigger an avalanche effect and generate a current. The current flows through the quenching resistor R1, the output signal S1 will change, and the current will generate a voltage drop across the quenching resistor R1, causing the bias voltage across the first SPAD 415 to decrease below the breakdown voltage, and the avalanche process is quenched.

[0084] Similarly, the second SPAD 417 of the second SPAD unit is coupled to the fourth voltage source 425 via a quench resistor R2 and a switch K2. Switch K2 controls whether the voltage U4 of the fourth voltage source 425 is applied to the second terminal (e.g., cathode) of the second SPAD 417 of the second SPAD unit. When switch K2 is on, the voltage U4 of the fourth voltage source 425 is applied to the second terminal (e.g., cathode) of the second SPAD 417 of the second SPAD unit through the quench resistor R2, and the second SPAD 417 operates in the Geiger state, thus enabling an avalanche response to incident photons. When switch K2 is off, the voltage U4 of the fourth voltage source 425 is disconnected from the second terminal (e.g., cathode) of the second SPAD 417 of the second SPAD unit, and the second SPAD 417 cannot operate in the reverse bias state, thus failing to provide an avalanche response to incident photons. Figure 4 As shown, an output signal S2 (e.g., a voltage signal) is drawn from the second terminal (e.g., the cathode) of the second SPAD 417 in the second SPAD unit. When the second SPAD 417 is operating in the Geiger state, photons incident on it will trigger an avalanche effect and generate a current. The current flows through the quenching resistor R2, the output signal S2 will change, and the current will generate a voltage drop across the quenching resistor R2, causing the bias voltage across the second SPAD 417 to decrease below the breakdown voltage, and the avalanche process will be quenched.

[0085] In Figure 1- Figure 4 In the illustrated embodiment, only one of the first pixel and the second pixel is shown, which will be readily understood by those skilled in the art. (Figure 1-) Figure 4 This is merely an illustrative representation of the structure of the sensing device disclosed herein and does not limit the number of first pixels and second pixels. Embodiments of the sensing device including multiple first pixels and second pixels will be described in detail below.

[0086] Figure 5A and Figure 5B A schematic diagram of an exemplary sensing device 500 consistent with some embodiments of this disclosure is shown, including a first pixel 501 and a second pixel 503. The first pixel 501 may be as shown in Figure 1 and... Figure 2 The first pixels 101 and 201, and the second pixel 505 in the illustrated embodiment can be as shown in Figure 1 and Figure 2 The second pixels 103 and 203 of the illustrated embodiment. Figure 5A A schematic diagram showing an arrangement of the first pixel 501 and the second pixel 503 in the sensing device 500 is illustrated. Figure 5A As shown, the sensing device 500 includes a plurality of first pixels 501 and a plurality of second pixels 503, wherein the first pixels 501 are uniformly arranged in an array of second pixels 503.

[0087] exist Figure 5A In the illustrated embodiment, taking a first pixel 501 (marked with "D") located in the middle as an example, this first pixel 501 is surrounded by eight second pixels 503. Figure 5A In the illustrated embodiment, taking a second pixel 503 located in the middle (marked with "C1") as an example, this second pixel 503 is surrounded by four first pixels 501. Taking another second pixel 503 located in the middle (marked with "C2") as an example, this second pixel 503 is surrounded by two first pixels 501.

[0088] Furthermore, those skilled in the art will understand that in some embodiments of this disclosure, "surrounding" includes adjacent positional relationships in the directions of top, bottom, left, right, upper left, lower left, upper right, and lower right. In other embodiments of this disclosure, "surrounding" may also represent other positional relationships, such as adjacent positional relationships in the directions of top, bottom, left, and right, or one or more of adjacent positional relationships in the directions of top, bottom, left, right, upper left, lower left, upper right, and lower right. In this disclosure, "adjacent" may mean being right next to each other or the distance between pixels being less than a threshold, which can be represented by the number of pixels, such as 1 pixel, 2 pixels, or other numbers of pixels.

[0089] exist Figure 5B In the embodiments described, taking a first pixel 501 located in the middle (marked with "D") as an example, the first pixel 501 is surrounded by four second pixels 503. Taking one of the second pixels 503 (marked with "C") as an example, the second pixel 503 is surrounded by four first pixels 501.

[0090] Figure 5A and 5B Only two possible arrangements of the first pixel 501 and the second pixel 503 are shown. By adjusting the distribution of the first and second pixels, their quantity and proportion can also be changed. For example, the first pixel can be surrounded by 5, 6, or 7 second pixels, and the second pixel can be surrounded by 3 or 5 first pixels. The pixel arrangement is not limited to these arrangements. Figures 5A-5B The arrangement of the first and second pixels can be adjusted according to actual application requirements. Furthermore, according to embodiments of this disclosure, the setting of the first pixel can also be adjusted based on detection needs. For example, the first pixel can be set only at locations requiring depth (distance) detection, while no first pixel or only a small number of first pixels are set at other locations.

[0091] In the above text Figure 2 and Figure 3In the illustrated embodiment, the first SPAD unit 207 (or 307) and the second SPAD unit 209 (or 309) are formed on the same circuit layer. According to embodiments of this disclosure, they may also be formed on different circuit layers. Figure 6A An unfolded view of an exemplary sensing device 600 consistent with some embodiments of this disclosure is shown. Figure 6B A side view of a portion of the SPAD unit in the sensing device 600 is shown below, with reference to the following. Figure 6A and 6B Detailed description.

[0092] Figure 6A and 6B The sensing device 600 shown includes a plurality of first pixels 601 and a plurality of second pixels 603. The first pixels 601 can be as shown in Figure 1 and... Figure 2 The first pixels 101 and 201 and the second pixel 603 in the illustrated embodiment can be as shown in Figure 1 and Figure 2 The illustrated embodiment shows second pixels 103 and 203. First pixel 601 includes a first SPAD unit 607. Second pixel 603 includes a second SPAD unit 609. (As shown...) Figure 6B As shown, the first SPAD unit 607 is formed on one circuit layer (referred to as the "first circuit layer"), while the second SPAD unit 609 is formed on another circuit layer (referred to as the "second circuit layer"). The second circuit layer is stacked on the first circuit layer, with the stacking direction as shown. Figure 6B As indicated by arrow R in the diagram. Furthermore, the projections of the first SPAD unit 607 and the second SPAD unit 609 onto a plane perpendicular to the stacking direction at least partially overlap or align. Figure 6A and 6B In this configuration, a first SPAD unit 607 is located below a second SPAD unit 609. In other embodiments, the first SPAD unit 607 may be positioned below only a portion of the second SPAD units 609. This stacked arrangement ensures that at least a portion of the second pixels 603 are stacked above the first pixels 601. At the overlapping areas, both light intensity or color information can be determined from the second pixels, and time-of-flight information can be determined from the first pixels, enabling accurate depth (distance) information. Furthermore, the duty cycle of the second pixels is not affected by the arrangement of the first pixels, which is beneficial for improving image quality.

[0093] According to embodiments of this disclosure, such as Figure 6B As shown, the second pixel 603 also includes a second filter 613 disposed on one side of the second SPAD unit 609, the second filter 613 allowing light of the first wavelength range and the second wavelength range to pass through. Figure 6BAs shown, the light incident on the second pixel 603 includes light with wavelengths within the first wavelength range wb1, light with wavelengths within the second wavelength range wb2, and light of other wavelengths. The second filter 613 allows light with wavelengths within the first wavelength range wb1 and the second wavelength range wb2 to pass through and be incident on the second SPAD unit 609, while light of other wavelengths is blocked by the second filter 613 and cannot pass through. The second SPAD unit 609 senses the light in the second wavelength range wb2 and outputs an electrical signal. Light with wavelengths within the first wavelength range wb1 passes through the second SPAD unit 609 and continues to propagate, eventually incident on the first pixel 601.

[0094] exist Figure 6B In the illustrated embodiment, the first pixel 601 includes a first filter 611, which only allows light with wavelengths within the first wavelength range wb1 to pass through and be incident on the first SPAD unit 607. Therefore, in Figure 6A and 6B In the illustrated embodiment, at a pixel location, the light intensity or color pattern can be determined by the second pixel, or the flight time can be determined by the first pixel, thus obtaining accurate depth (e.g., distance) information.

[0095] According to embodiments of this disclosure, the second wavelength range includes a first sub-band, a second sub-band, or a third sub-band. The first, second, and third sub-bands, for example, include wavelength ranges of red, green, and blue light in the visible spectrum, respectively, wherein the wavelength range of red light is 625-740 nm, the wavelength range of green light is 500-565 nm, and the wavelength range of blue light is 440-485 nm. In other embodiments, the second wavelength range may further include more or fewer sub-bands, and the sub-bands may correspond to wavelength ranges of other colors of visible light. Correspondingly, the second pixel includes any one of a first sub-pixel, a second sub-pixel, and a third sub-pixel, wherein the first sub-pixel includes a first sub-filter that allows light of the first sub-band to pass through; the second sub-pixel includes a second sub-filter that allows light of the second sub-band to pass through; and the third sub-pixel includes a third sub-filter that allows light of the third sub-band to pass through. As an example, R will be used to represent the first sub-pixel, G to represent the second sub-pixel, and B to represent the third sub-pixel in the accompanying drawings and specifications.

[0096] Those skilled in the art will understand that the phrase "the second wavelength range includes the first sub-band, the second sub-band, or the third sub-band" in this disclosure encompasses two cases: the second wavelength range is larger than the sum of the first, second, or third sub-bands; or the second wavelength range is a sub-band selected from the first, second, or third sub-bands, for example, corresponding to the wavelength ranges of red, green, and blue light, respectively. In the former case, the second wavelength range includes, for example, the wavelength range of visible light, and thus the brightness of the surrounding environment can be determined based on the output of the second pixel. In the latter case, the second wavelength range is the first, second, or third sub-wavelength range, and a second pixel can sense incident light in one sub-band, for example, determining the intensity of a color of light. For example, in Figure 2 In the illustrated embodiment, the second filter 213 is a first sub-filter. The second wavelength range includes a first sub-band. The first sub-band includes the wavelength range of red light (e.g., 625-740 nm). The second filter 213 (i.e., the first sub-filter) and the second SPAD unit 209 constitute a first sub-pixel. In this case, the second sub-pixel can sense the intensity of red light in ambient light.

[0097] Figure 7 A schematic diagram of an exemplary sensing device 700 consistent with some embodiments of the present disclosure is shown, including a first pixel 701 and a second pixel 703. The first pixel 701 may be as shown in FIG1 and Figure 2 The first pixels 101 and 201 and the second pixel 703 in the illustrated embodiment can be as shown in Figure 1 and Figure 2 The illustrated embodiment shows second pixels 103 and 203. Second pixel 703 includes a first sub-pixel R, a second sub-pixel G, and a third sub-pixel B, wherein the first sub-pixel R is used to sense red light with a wavelength range of 625-740 nm, the second sub-pixel G is used to sense green light with a wavelength range of 500-565 nm, and the third sub-pixel B is used to sense blue light with a wavelength range of 440-485 nm. According to embodiments of this disclosure, the first pixel 701 is uniformly disposed in an array of the first sub-pixel R, the second sub-pixel G, and the third sub-pixel B.

[0098] According to embodiments of this disclosure, the second bias voltage applied to the first sub-pixel R, the second bias voltage applied to the second sub-pixel G, and the third bias voltage applied to the third sub-pixel B are different from each other, thereby improving the detection performance of each sub-pixel for its respective sensing wavelength range. For example, for SPADs, with the same reverse bias voltage, their photon detection efficiency (PDE) for different wavelengths is not the same. Therefore, the bias voltages applied to the SPADs of the first sub-pixel, the second sub-pixel, and the third sub-pixel can be controlled / adjusted separately. For example, by applying different bias voltages to the SPADs of the first sub-pixel R, the second sub-pixel G, and the third sub-pixel B, the photon detection efficiency can be optimized independently for each channel, balancing the RGB response curves, so that the colors captured by the imaging system are more consistent with human eye perception. For example, a smaller bias voltage can be provided to the SPAD of the second sub-pixel G, which has a relatively high PDE, further reducing power consumption and heat generation. At the same time, the bias voltage of each channel can be dynamically configured according to different lighting environments, improving the performance of the imaging system under different lighting conditions.

[0099] In embodiments of this disclosure, the first bias voltage Vb1 differs from the second bias voltage Vb2. In some embodiments, the first bias voltage Vb1 may be greater than the second bias voltage Vb2. For the SPAD of the second pixel (e.g., the first sub-pixel R, the second sub-pixel G, or the third sub-pixel B), applying a smaller reverse bias voltage can effectively reduce the dark count rate of the SPAD, shorten the recovery time of the SPAD, and improve the imaging quality of the SPAD. Especially when the proportion of the second pixel is high, by reducing the second bias voltage Vb2, the overall power consumption and heat generation of the device can be effectively reduced, and the increase in dark count rate with the increase of heat generation can also be effectively reduced. In addition, applying a relatively high reverse bias voltage to the SPAD of the first pixel can improve its photon detection efficiency and improve its distance measurement capability; it can also accelerate the initiation of the avalanche effect, further improve the temporal resolution capability of the first pixel, and improve the ranging accuracy.

[0100] In some other embodiments of this disclosure, the first bias voltage Vb1 can be less than the second bias voltage Vb2, thereby the reverse bias voltage of the SPAD of the second pixel is greater than the reverse bias voltage of the SPAD of the first pixel. By applying a relatively low reverse bias voltage to the SPAD of the first pixel, device power consumption can be reduced to a certain extent. Simultaneously, in low-light environments, a lower reverse bias voltage can effectively reduce recovery time and improve the dynamic range of the SPAD of the first pixel in low-light conditions. Furthermore, for the SPAD of the second pixel, applying a larger reverse bias voltage can further improve the photon detection efficiency in the visible light band, further enhancing the dynamic range and imaging quality of the SPAD of the second pixel in low-light environments.

[0101] Additionally, although Figure 1- Figure 7 The first and second pixels are shown to be the same size, but this disclosure does not limit the size relationship between the two types of pixels. According to embodiments of this disclosure, the SPADs in the first and second SPAD units can be formed of different materials. According to embodiments of this disclosure, the first SPAD in the first SPAD unit can be an indium gallium arsenide-based SPAD, a mercury cadmium telluride-based SPAD, or an indium telluride-based SPAD, and the second SPAD in the second SPAD unit can be a silicon-based SPAD. According to another embodiment of this disclosure, the first SPAD in the first SPAD unit can be a silicon-based SPAD, and the second SPAD in the second SPAD unit can be an indium gallium arsenide-based SPAD, a mercury cadmium telluride-based SPAD, or an indium telluride-based SPAD.

[0102] According to embodiments of this disclosure, at least one of the first bias voltage Vb1 and the second bias voltage Vb2 applied to the first SPAD unit and the second SPAD unit by the voltage source is adjustable. Figure 8 A schematic diagram of an exemplary sensing device 800 consistent with some embodiments of this disclosure is shown, including a first pixel 801, a second pixel 803, and a voltage source 805. The first pixel 801 may be as shown in Figure 1 and... Figure 2 The first pixels 101 and 201, and the second pixel 805 in the illustrated embodiment can be as shown in Figure 1 and Figure 2 The second pixel 103, 203 of the illustrated embodiment, the voltage source 805 can be the voltage source 105 of the embodiment shown in FIG1.

[0103] like Figure 8 As shown, the sensing device 800 further includes a controller 827, which can adjust at least one of the first bias voltage Vb1 or the second bias voltage Vb2 according to at least one of the measurement parameters or environmental parameters.

[0104] According to embodiments of this disclosure, the measurement parameter includes the target detection distance of the first pixel of the sensing device. When the target detection distance is large (e.g., greater than a distance threshold), the first bias voltage Vb1 can be increased to improve the photon detection efficiency (PDE) of the first SPAD unit of the first pixel, thereby enabling the sensing of weak echoes returned from distant obstacles. When the target detection distance is small (e.g., less than the distance threshold), the first bias voltage Vb1 can be decreased. According to embodiments of this disclosure, the measurement parameter may also include the reflectivity of the obstacle. When the reflectivity of the obstacle is high (e.g., greater than a reflectivity threshold), the first bias voltage Vb1 can be decreased; when the reflectivity of the obstacle is low (e.g., less than a reflectivity threshold), the first bias voltage Vb1 can be increased.

[0105] According to embodiments of this disclosure, the environmental parameters include ambient light intensity. The controller 827 can determine the ambient light intensity based on the signal output by the second SPAD unit of the second pixel 803. The second pixel 803 can be as follows: Figure 2 The second pixel 203 with the second filter 213 shown in the embodiment may also be as follows: Figure 3 The illustrated embodiment shows a second pixel 303 without a filter. When the second pixel 803 does not include a filter, light beams of different wavelengths can be incident on the second SPAD unit of the second pixel 803, including beams in the visible light band. Therefore, the controller 827 can determine the ambient light intensity based on the signal output from the second SPAD unit of the second pixel 803. When the second pixel 803 includes a filter and the passband of the filter includes the visible light band, the controller 827 can directly determine the ambient light intensity based on the signal output from the second SPAD unit of the second pixel 803. When the second pixel 803 is as follows... Figure 7 When the second pixel 703 of the illustrated embodiment (including the first sub-pixel R, the second sub-pixel G, and the third sub-pixel B) is in use, the controller 827 can determine the ambient light intensity based on the output signals of the first sub-pixel R, the second sub-pixel G, and the third sub-pixel B.

[0106] exist Figure 4 In the illustrated embodiment, the voltage sources include a first voltage source 419, a second voltage source 421, a third voltage source 423, and a fourth voltage source 425. A first terminal (e.g., anode) of a first SPAD 415 of the first SPAD unit is coupled to the first voltage source 419, and its voltage is U1. A second terminal (e.g., cathode) of the first SPAD 415 of the first SPAD unit is coupled to the second voltage source 421, and its voltage is U2. A first bias voltage Vb1 = U2 - U1 is applied to the first SPAD 415 of the first SPAD unit by the voltage sources. To adjust the first bias voltage Vb1, at least one of the first voltage source 419 and the second voltage source 421 may include a switchable sub-voltage source. The following description uses the example of the second voltage source including a switchable sub-voltage source.

[0107] Figure 9A and Figure 9B A schematic diagram of an exemplary sensing device 900 consistent with some embodiments of this disclosure is shown, including a first pixel and a second pixel. The first pixel includes a first SPAD unit, which includes one or more SPADs 915; the second pixel includes a second SPAD unit, which includes one or more SPADs 917. The first pixel may be as follows: Figure 1A , Figure 1B and Figure 2The first pixels 101 and 201 of the illustrated embodiment, the second pixel can be as follows: Figure 1A , Figure 1B and Figure 2 In the illustrated embodiment, the second pixels 103 and 203, the first SPAD unit can be as follows: Figure 1A , Figure 1B and Figure 2 The first SPAD unit 107, 207 of the illustrated embodiment, the second SPAD unit may be as follows: Figure 1A , Figure 1B and Figure 2 The second SPAD unit 109, 209 of the illustrated embodiment.

[0108] Figure 9 illustrates this using a single SPAD as an example. The same principle applies to cases where the first and second SPAD units comprise multiple SPADs.

[0109] In addition, Figure 9A and 9B In one embodiment, the sensing device 900 includes quenching resistors R1 and R2, and outputs an output signal S1 from the second terminal (e.g., cathode) of the SPAD 915 of the first SPAD unit, and an output signal S2 from the second terminal (e.g., cathode) of the SPAD 917 of the second SPAD unit. Its operating principle is similar to... Figure 4 The embodiments shown are similar and will not be described again here.

[0110] like Figure 9A As shown, the voltage source includes a first voltage source 919 with a voltage of U1, and the anode of SPAD 915 of the first SPAD unit is coupled to the first voltage source 919. The voltage source also includes a first sub-voltage source 929 and a second sub-voltage source 931, and the sensing device 900 further includes a controller 927. The voltage of the first sub-voltage source 929 is U21, and the voltage of the second sub-voltage source 931 is U22. The cathode of SPAD 915 of the first SPAD unit is coupled to the first sub-voltage source 929 via a first switch K11, and the cathode of SPAD 915 of the first SPAD unit is coupled to the second sub-voltage source 931 via a second switch K12. The anode of SPAD 915 of the first SPAD unit is coupled to the first voltage source 919. The controller 927 can determine the on / off state of the first switch K11 and the second switch K12 based on at least one of the measured parameters or environmental parameters. Figure 9AAs shown, controller 927 is coupled to the control terminals of the first switch K11 and the second switch K12, respectively, so as to control the conduction and disconnection of the first switch K11 and the second switch K12 according to at least one of the measured parameters or environmental parameters. Those skilled in the art will understand that the first switch K11 and the second switch K12 do not conduct simultaneously. When the first switch K11 is on and the second switch K12 is off, the cathode of SPAD 915 of the first SPAD unit is coupled to the first sub-voltage source 929, and the voltage source applies a first bias voltage Vb1 = U21 - U1 to SPAD 915 of the first SPAD unit. When the first switch K11 is off and the second switch K12 is on, the cathode of SPAD 915 of the first SPAD unit is coupled to the second sub-voltage source 931, and the voltage source applies a first bias voltage Vb1 = U22 - U1 to SPAD 915 of the first SPAD unit.

[0111] like Figure 9B As shown, the voltage source includes a third voltage source 923 with a voltage of U3, and the anode of SPAD 917 of the second SPAD unit is coupled to the third voltage source 923. The voltage source also includes a third sub-voltage source 933 and a fourth sub-voltage source 935, where the voltage of the third sub-voltage source 933 is U41 and the voltage of the fourth sub-voltage source 935 is U42. The cathode of SPAD 917 of the second SPAD unit is coupled to the third sub-voltage source 933 via a third switch K21, and the cathode of SPAD 917 of the second SPAD unit is coupled to the fourth sub-voltage source 935 via a fourth switch K22. The anode of SPAD 917 of the second SPAD unit is coupled to the third voltage source 923. The controller 927 can determine the on / off state of the third switch K21 and the fourth switch K22 based on at least one of the measured parameters or environmental parameters. Figure 9B As shown, controller 927 is coupled to the control terminals of third switch K21 and fourth switch K22 respectively, thereby controlling the conduction and disconnection of third switch K21 and fourth switch K22 according to at least one of the measured parameters or environmental parameters. Those skilled in the art will understand that third switch K21 and fourth switch K22 do not conduct simultaneously. When third switch K21 is on and fourth switch K22 is off, the cathode of SPAD 917 of the second SPAD unit is coupled to the third sub-voltage source 933, at which time the voltage source applies a second bias voltage Vb2 = U41 - U3 to SPAD 917 of the second SPAD unit. When third switch K21 is off and fourth switch K22 is on, the cathode of SPAD 917 of the second SPAD unit is coupled to the fourth sub-voltage source 935, at which time the voltage source applies a second bias voltage Vb2 = U42 - U1 to SPAD 917 of the second SPAD unit.

[0112] According to an embodiment of the present disclosure, as Figure 9A shown, in order to ensure unidirectional current flow, a diode D1 is provided between the first switch K11 and the quenching resistor R1, and a diode D2 is provided between the second switch K12 and the quenching resistor R1. As Figure 9B shown, a diode D3 is provided between the third switch K21 and the quenching resistor R2, and a diode D4 is provided between the fourth switch K22 and the quenching resistor R2.

[0113] According to an embodiment of the present disclosure, U21 < U22 ≤ U41 < U42, or U42 < U41 ≤ U22 < U21.

[0114] Optionally, U22 = U41, that is, the SPAD 915 of the first pixel and the SPAD 917 of the second pixel can share the same voltage path.

[0115] In Figure 9A and 9B the shown embodiment, the cathode of the SPAD 915 of the first SPAD unit is coupled to different sub - voltage sources, and the cathode of the SPAD 917 of the second SPAD unit is coupled to different sub - voltage sources. Those skilled in the art can understand that the present disclosure is not limited thereto, and it is also possible to couple the anode of the SPAD 915 of the first SPAD unit to different sub - voltage sources, couple the anode of the SPAD 917 of the second SPAD unit to different sub - voltage sources, and couple the cathode of the SPAD 915 of the first SPAD unit to a fixed voltage source, and couple the cathode of the SPAD 917 of the second SPAD unit to a fixed voltage source. By controlling the switch to couple the anode of the SPAD 915 to different sub - voltage sources and the anode of the SPAD 917 to different sub - voltage sources, the reverse bias voltages of the SPAD 915 and the SPAD 917 are adjusted. Details are not described herein again.

[0116] Figure 10 shows a schematic diagram of an exemplary sensing device 1000 consistent with some embodiments of the present disclosure, which includes a first pixel 1001, a second pixel 1003 and a voltage source 1005, and includes a controller 1027. The first pixel 1001 can be the first pixel 101, 201 of the embodiment shown in FIG. 1 and Figure 2 shown, the second pixel 1005 can be the first pixel 103, 203 of the embodiment shown in FIG. 1 and Figure 2 shown, the voltage source 1005 can be the voltage source 105 of the embodiment shown in FIG. 1, and the controller 1027 can be the controller 827 of the embodiment shown in Figure 8 shown.

[0117] The controller 1027 (or 827 or 927) can be mounted on the sensing device, or it can be mounted on equipment such as vehicles, servers, and computers. The controller may include control circuitry, a central processing unit (CPU), and may also include other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, and similar devices. The general-purpose processor can be a microprocessor or any conventional processor.

[0118] like Figure 10 As shown, the sensing device 1000 also includes a processor 1039, which is coupled to the first pixel 1001 and the second pixel 1003 and can determine information about the surrounding environment based on the signals output by the first pixel 1001 and the second pixel 1003.

[0119] In the embodiments of this disclosure, the processor can be a circuit with signal processing capabilities. For example, the processor can be a circuit with instruction read and execute capabilities, such as a central processing unit (CPU), microprocessor, graphics processing unit (GPU), or digital signal processor (DSP). Alternatively, the processor can implement its functions through the logical relationships of hardware circuits, which can be fixed or reconfigurable. For example, the processor may be a hardware circuit implemented using an application-specific integrated circuit (ASIC) or a programmable logic device (PLD), such as a field-programmable gate array (FPGA). In a reconfigurable hardware circuit, the processor loads a configuration document to implement the hardware circuit configuration process, which can be understood as the processor loading instructions to achieve its functions.

[0120] According to embodiments of this disclosure, the processor 1039 can determine color information based at least on the signal output by the second pixel 1003, and determine depth information based on the signal output by the first pixel 1001.

[0121] According to embodiments of this disclosure, the sensing device 1000 further includes a transmitter 1041. The transmitter 1041 can emit a light beam L1, the wavelength of which is within the first wavelength range Wb1. The processor 1039 can determine depth information based on the emission time of the light beam L1 and the reception time of the first pixel 1001 receiving light within the first wavelength range. Figure 10 The processor 1039 is coupled to the transmitter 1041, thereby enabling it to obtain or indicate the emission time of the beam L1 emitted by the transmitter 1041. In some embodiments, the beam L1 may include a continuous wave beam or a pulsed beam.

[0122] In some embodiments, the transmitter 1041 may include a transmitting circuit, a vertical-cavity surface-emitting laser (VCSEL), an edge-emitting laser (EEL), a distributed feedback laser (DFB), a fiber laser, or a similar device. Multiple transmitting circuits or lasers may be arranged in a one-dimensional or two-dimensional array.

[0123] The sensing device in the above embodiments includes a first pixel and a second pixel, wherein the first pixel is used to sense light in a first wavelength range to measure depth, and the second pixel is used to sense light in a second wavelength range. This disclosure also provides a sensing device in which the same pixel can be applied with different bias voltages, thereby operating in different modes. A detailed description is provided below with reference to the accompanying drawings.

[0124] Figure 11 A schematic diagram of an exemplary sensing device 1100 consistent with some embodiments of the present disclosure is shown. The sensing device 1100 includes a third pixel 1143 and a voltage source 1105. The third pixel 1143 includes a third SPAD unit, which includes one or more SPADs.

[0125] like Figure 11As shown, the voltage source 1105 is coupled to the third SPAD unit of the third pixel 1143, and can apply a third bias voltage Vb3 or a fourth bias voltage Vb4 to the SPAD of the third SPAD unit so that the third pixel 1143 operates in a first mode or a second mode. In the first mode, the third SPAD unit senses light in a first wavelength range Wb1 to measure depth, and in the second mode, the third SPAD unit senses light in a second wavelength range Wb2 to generate a pattern. The third bias voltage Vb3 is different from the fourth bias voltage Vb4.

[0126] According to an embodiment of this disclosure, the sensing device 1100 further includes a controller 1127. The controller 1127 is coupled to the voltage source 1105 and can control the voltage source 1105 to output a third bias voltage Vb3 or a fourth bias voltage Vb4 to the third SPAD unit of the third pixel 1143, thereby enabling the third pixel 1143 to operate in a first mode or a second mode.

[0127] According to embodiments of this disclosure, such as Figure 11 As shown, the sensing device 1100 also includes a processor 1139, which is coupled to a third pixel 1143 and can determine information about the surrounding environment based on the signal output by the third pixel 1143.

[0128] According to embodiments of this disclosure, such as Figure 11 As shown, the processor 1139 can determine color information based at least on the signal output by the third pixel 1143 in the second mode, and determine depth information based on the signal output by the third pixel 1143 in the first mode.

[0129] According to embodiments of this disclosure, such as Figure 11 As shown, the sensing device 1100 also includes a transmitter 1141. The transmitter 1141 can emit a light beam L1, the wavelength of which is within the first wavelength range Wb1. The processor 1139 can determine depth information based on the emission time of the light beam L1 and the reception time of the light within the first wavelength range received by the third pixel 1143. Figure 11 The processor 1139 is coupled to the transmitter 1141, thereby enabling it to obtain or indicate the emission time of the beam L1 emitted by the transmitter 1141. In some embodiments, the beam L1 may include a continuous wave beam or a pulsed beam.

[0130] Furthermore, those skilled in the art will understand that the features in the embodiments described above with reference to Figures 1-10, unless otherwise specified... Figure 11 The characteristics are contradictory; otherwise, they can all be applied to... Figure 11The embodiments are as follows. Further details will not be provided here.

[0131] Finally, it should be noted that the above descriptions are merely embodiments of this disclosure and are not intended to limit this disclosure. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A sensing device, comprising: A first pixel, the first pixel including a first SPAD unit configured to sense light in a first wavelength range to measure depth, wherein the first SPAD unit includes one or more SPADs; The second pixel includes a second SPAD unit configured to sense light in a second wavelength range, wherein the second SPAD unit includes one or more SPADs. and A voltage source, coupled to the first SPAD unit and the second SPAD unit, is configured to apply a first bias voltage to the SPADs of the first SPAD unit and a second bias voltage to the SPADs of the second SPAD unit. The first bias voltage is different from the second bias voltage.

2. The sensing device of claim 1, wherein the first pixel further comprises a first filter disposed on one side of the first SPAD unit, the first filter being configured to allow light of the first wavelength range to pass through and be incident on the first SPAD unit.

3. The sensing device of claim 1, wherein the second pixel includes a second filter disposed on one side of the second SPAD unit, the second filter being configured to allow light of a second wavelength range to pass through and be incident on the second SPAD unit.

4. The sensing device according to claim 1, wherein the voltage source includes a first voltage source, a second voltage source, a third voltage source and a fourth voltage source, wherein a first terminal of the SPAD of the first SPAD unit is coupled to the first voltage source, a second terminal of the SPAD of the first SPAD unit is coupled to the second voltage source, a first terminal of the SPAD of the second SPAD unit is coupled to the third voltage source, and a second terminal of the SPAD of the second SPAD unit is coupled to the fourth voltage source.

5. The sensing device of claim 4, wherein the first bias voltage is different from the second bias voltage, comprising at least one of the following: The voltage of the first voltage source is different from the voltage of the third voltage source; The voltage of the second voltage source is different from the voltage of the fourth voltage source.

6. The sensing device according to any one of claims 1-5, the sensing device comprising a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are uniformly distributed among the plurality of second pixels.

7. The sensing device according to any one of claims 1-5, the sensing device comprising a plurality of first pixels and a plurality of second pixels, wherein the first pixels are surrounded by 4-8 second pixels, or the second pixels are surrounded by 2-5 first pixels.

8. The sensing device according to any one of claims 1-5, wherein the first SPAD unit of the first pixel and the second SPAD unit of the second pixel are formed on the same circuit layer.

9. The sensing device of claim 3, wherein the second wavelength range includes a first sub-band, a second sub-band, or a third sub-band, the second pixel includes any one of a first sub-pixel, a second sub-pixel, and a third sub-pixel, wherein the first sub-pixel includes a first sub-filter configured to allow light of the first sub-band to pass through; the second sub-pixel includes a second sub-filter configured to allow light of the second sub-band to pass through; and the third sub-pixel includes a third sub-filter configured to allow light of the third sub-band to pass through.

10. The sensing device of claim 9, wherein the second bias voltage applied to the first sub-pixel, the second bias voltage applied to the second sub-pixel, and the third bias voltage applied to the third sub-pixel are different from each other.

11. The sensing device of claim 9, wherein the second wavelength range is the first sub-wavelength range, the second sub-wavelength range, or the third sub-wavelength range.

12. The sensing device according to any one of claims 1-5, wherein the first bias voltage is higher than the second bias voltage.

13. The sensing device according to any one of claims 1-5, wherein the first bias voltage is lower than the second bias voltage.

14. The sensing device according to any one of claims 1-5, further comprising a controller configured to adjust at least one of the first bias voltage or the second bias voltage according to at least one of the measurement parameters or environmental parameters.

15. The sensing device of claim 14, wherein the voltage source includes a first sub-voltage source and a second sub-voltage source, wherein the SPAD of the first SPAD unit is coupled to the first sub-voltage source via a first switch, the SPAD of the first SPAD unit is coupled to the second sub-voltage source via a second switch, and the controller is configured to determine the on and off states of the first switch and the second switch based on at least one of the measurement parameters or environmental parameters.

16. The sensing device of claim 14, wherein the voltage source comprises a third sub-voltage source and a fourth sub-voltage source, wherein the SPAD of the second SPAD unit is coupled to the third sub-voltage source via a third switch, the SPAD of the second SPAD unit is coupled to the fourth sub-voltage source via a fourth switch, and the controller is configured to determine the on and off states of the third switch and the fourth switch based on at least one of the measurement parameters or environmental parameters.

17. The sensing device of claim 15, wherein the voltage source includes a third sub-voltage source, wherein the SPAD of the second SPAD unit is coupled to the third sub-voltage source via a third switch, the SPAD of the third SPAD unit is coupled to the second sub-voltage source via a fourth switch, and the controller is configured to determine the on and off states of the third switch and the fourth switch based on at least one of the measurement parameters or environmental parameters.

18. The sensing device of claim 14, wherein the environmental parameter includes ambient light intensity, and the controller determines the ambient light intensity based on the signal output by the second SPAD unit.

19. The sensing device according to any one of claims 1-5, further comprising a processor configured to determine information about the surrounding environment based on signals output by the first pixel and the second pixel.

20. The sensing device of claim 19, wherein the processor is configured to determine color information based at least on the signal output by the second pixel.

21. The sensing device of claim 20, further comprising a transmitter configured to emit a light beam having a wavelength within the first wavelength range, and the processor configured to determine depth information based on the emission time of the light beam and the reception time of the first pixel receiving light within the first wavelength range.

22. A sensing device, comprising: The third pixel includes a third SPAD unit, wherein the third SPAD unit includes one or more SPADs; and A voltage source, coupled to the third SPAD unit and configured to apply a third bias voltage or a fourth bias voltage to the SPAD of the third SPAD unit, such that the third pixel operates in a first mode or a second mode, wherein in the first mode, the third SPAD unit senses light in a first wavelength range to measure depth, and in the second mode, the third SPAD unit senses light in a second wavelength range to generate a pattern, wherein the third bias voltage is different from the fourth bias voltage.

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