Electronic device and program

Abstract

An electronic device with identification function is provided. The electronic device includes a display unit. The display unit includes a plurality of light-emitting elements and a plurality of light-receiving elements. The light-receiving elements receive reflected light emitted from the light-emitting elements and reflected by a subject. When the illuminance of the ambient light is below a first value, the light-emitting elements emit light at a first brightness, and the light-receiving elements receive light during a first detection period. When the illuminance of the ambient light is above the first value, the light-emitting elements emit light at a second brightness higher than the first brightness, and the light-receiving elements receive light during a second detection period shorter than the first detection period.

Description

Technical Field

[0001] One aspect of the present invention relates to an electronic device. Another aspect of the present invention relates to a program for causing an electronic device to execute. Another aspect of the present invention relates to a method for operating an electronic device. Another aspect of the present invention relates to a method for identifying an electronic device.

[0002] Note that one aspect of the present invention is not limited to the aforementioned technical field. Examples of the technical field encompassing one aspect of the present invention disclosed in this specification, etc., include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, and methods for driving or manufacturing these devices. A semiconductor device refers to any device capable of operating by utilizing the characteristics of semiconductors. Background Technology

[0003] In recent years, mobile phones such as smartphones, tablet computers, and laptop PCs (personal computers) have become widely used. These devices often contain personal information, and various identification technologies have been developed to prevent their misuse.

[0004] For example, Patent Document 1 discloses an electronic device with a fingerprint sensor in the push-button switch section.

[0005] [Preliminary Technology Documents]

[0006] [Patent Literature]

[0007] [Patent Document 1] U.S. Patent Application Publication No. 2014 / 0056493 Summary of the Invention

[0008] The technical problem that the invention aims to solve

[0009] One objective of this invention is to provide a display unit with light detection functionality. Another objective of this invention is to provide a high-definition display unit with light detection functionality. Another objective of this invention is to provide a display device with light detection functionality. Another objective of this invention is to provide a high-definition display device with light detection functionality. Another objective of this invention is to provide an electronic device with display functionality. Another objective of this invention is to provide an electronic device with light detection functionality. Another objective of this invention is to provide an electronic device with identification functionality, such as fingerprint recognition. Another objective of this invention is to provide a highly secure electronic device. Another objective of this invention is to provide a highly operable electronic device. Another objective of this invention is to provide a multifunctional electronic device. Another objective of this invention is to provide a novel electronic device. Another objective of this invention is to provide an electronic device with a highly secure identification method. Another objective of this invention is to provide an electronic device with a novel operating method. Another objective of this invention is to provide an electronic device with a novel identification method.

[0010] Furthermore, one objective of this invention is to provide a program that enables highly secure electronic devices to execute. Another objective of this invention is to provide a program that enables novel electronic devices to execute. Finally, one objective of this invention is to provide a novel program.

[0011] Note that the description of the stated objectives does not preclude the existence of other objectives. One aspect of the invention does not necessarily require achieving all of the stated objectives. Objectives other than those stated can be extracted from the description, drawings, claims, etc.

[0012] means of solving technical problems

[0013] One aspect of the present invention is an electronic device comprising a display unit, the display unit including a plurality of light-emitting elements and a plurality of light-receiving elements, the light-receiving elements receiving reflected light emitted from the light-emitting elements and reflected by a subject; when the illuminance of the ambient light is below a first value, the light-receiving elements receive light during a first detection period, during which the light-emitting elements emit light at a first brightness; when the illuminance of the ambient light is above the first value, the light-receiving elements receive light during a second detection period shorter than the first detection period, during which the light-emitting elements emit light at a second brightness higher than the first brightness.

[0014] Furthermore, in the above method, it is preferable that the light-receiving element receives light during the first detection period when the illuminance of the ambient light is below a first value, and receives light during the second detection period when the illuminance of the ambient light is above the first value.

[0015] Another aspect of the present invention is an electronic device comprising a display unit, the display unit including a plurality of pixel circuits and a plurality of second elements. Each pixel circuit includes a first element and a current control unit. The first element includes a first electrode, a second electrode, and a first light-emitting layer located between the first and second electrodes. The current control unit includes a first terminal and a second terminal connected to the second electrode. The first electrodes of each first element in the plurality of pixel circuits are connected to each other, and the first terminals of each current control unit in the plurality of pixel circuits are connected to each other. A second element receives reflected light emitted from the first element and reflected by a subject. When the ambient light illuminance is below a first value, the second element receives light during a first detection period, during which the first element emits light at a first brightness. When the ambient light illuminance is above the first value, the second element receives light during a second detection period shorter than the first detection period, during which the first element emits light at a second brightness higher than the first brightness. The potential difference between the first terminal and the first electrode when emitting light at the second brightness is greater than the potential difference between the first terminal and the first electrode when emitting light at the first brightness.

[0016] In addition, in the above-described manner, it is preferred that the current control unit includes a first transistor, one of the source and drain of the first transistor is connected to a first terminal, and the other of the source and drain of the first transistor is connected to a second terminal.

[0017] In addition, in the above-described manner, it is preferable that the current control unit includes a first transistor, and when the first element emits light, one of the source and drain of the first transistor is supplied with a potential corresponding to the first terminal, and the current of the first element is controlled by the first transistor.

[0018] In addition, in the above method, it is preferable that the product of the first brightness and the first detection period duration is more than 0.8 times and less than 1.2 times the product of the second brightness and the second detection period duration.

[0019] In addition, in the above-described manner, it is preferable that the subject is a first finger that touches or approaches the surface of the display, and that the electronic device has the function of acquiring fingerprint information of the first finger.

[0020] In addition, in the above method, it is preferable to further include a storage unit, the subject being a first finger that touches or approaches the surface of the display unit, the storage unit containing fingerprint information of a second finger, and the electronic device having the function of acquiring fingerprint information of the first finger and comparing fingerprint information of the first finger with fingerprint information of the second finger.

[0021] In addition, in the above-described manner, it is preferred that the second element includes a third electrode and a fourth electrode and an active layer located between the third electrode and the fourth electrode, the third electrodes included in the plurality of second elements are connected to each other, and the third electrodes included in the plurality of second elements and the first electrodes of the first elements included in the plurality of pixel circuits are supplied with the same potential.

[0022] In addition, in the above-described manner, it is preferable that the second element includes a second light-emitting layer, which is located between the third electrode and the fourth electrode.

[0023] In addition, in the above-described manner, it is preferable that the first element has the function of emitting light selected from one of the three colors: red, green, and blue, and the second element has the function of emitting light selected from another of the three colors and receiving visible light.

[0024] In addition, in the above-described manner, it is preferable that the first element has the function of emitting light selected from one of the three colors: red, green, and blue, and the second element has the function of emitting light selected from another of the three colors and receiving infrared light.

[0025] Furthermore, in the above-described manner, it is preferable that the potential of the first electrode when emitting light at the second brightness is lower than the potential of the first electrode when emitting light at the first brightness.

[0026] Furthermore, in the above-described manner, it is preferable that the potential of the first terminal when emitting light at a second brightness is higher than the potential of the first terminal when emitting light at a first brightness.

[0027] Another aspect of the present invention is an electronic device including a display unit and a camera. The display unit includes a plurality of pixel circuits and a plurality of second elements. The pixel circuits include a first element and a current control unit. In a first operating mode, the second elements receive reflected light emitted from the first element and reflected by the subject. When the illuminance of the ambient light is below a first value, the first element emits light at a first brightness. The second element receives light during a first detection period. When the illuminance of the ambient light is above the first value, the first element emits light at a second brightness higher than the first brightness. The second element receives light during a second detection period shorter than the first detection period. In a second operating mode, the first element emits light at a third brightness, and the third brightness is used as a flash when taking pictures with the camera. The third brightness is lower than the second brightness.

[0028] Furthermore, in the above-described manner, it is preferable that the first element includes a first electrode, a second electrode, and a light-emitting layer located between the first electrode and the second electrode; the current control unit includes a first terminal and a second terminal connected to the second electrode; the first electrodes of each first element included in the plurality of pixel circuits are connected to each other; the first terminals of each current control unit included in the plurality of pixel electrodes are connected to each other; the potential difference between the first terminal and the first electrode when emitting light at a second brightness is greater than the potential difference between the first terminal and the first electrode when emitting light at a first brightness; and the potential difference between the first terminal and the first electrode when emitting light at a second brightness is greater than the potential difference between the first terminal and the first electrode when emitting light at a third brightness.

[0029] Another aspect of the present invention is a program executed by an electronic device, the electronic device including a display unit and a storage unit having display and detection functions, the program including the following steps: a first step, positioning a first finger in a manner that touches or approaches the surface of the display unit; a second step, displaying a first area of ​​a first image on the display unit at a first brightness, and performing detection during a first detection period using the first area of ​​the first image as a light source to obtain a first photographic image of the first finger; a third step, selecting whether to use the first photographic image; and a fourth step, if the photographic image is not used in the third step, displaying the first area of ​​the first image on the display unit at a second brightness higher than the first brightness. The process involves: 1) using a first region of the first image as a light source and performing detection during a second detection period shorter than the first detection period to obtain a second camera image of the first finger; 2) selecting whether to use the second camera image; 3) if the camera image is used in the third step, extracting the fingerprint information of the first finger from the first camera image, and if the camera image is used in the fifth step, extracting the fingerprint information of the first finger from the second camera image; 4) comparing the fingerprint information of the first finger extracted in the sixth step with the fingerprint information of the second finger stored in the storage unit, and if the camera image is used in the third step, proceeding to the sixth step without performing the fourth and fifth steps.

[0030] In addition, in the above method, it is preferable that the product of the first brightness and the first detection period duration is more than 0.8 times and less than 1.2 times the product of the second brightness and the second detection period duration.

[0031] One aspect of the present invention is an electronic device including a display unit, a storage unit, and an illuminance sensor. The display unit includes multiple pixel circuits and multiple light-receiving elements. The pixel circuits include light-emitting elements and a current control unit. The light-receiving elements receive reflected light emitted from the light-emitting elements and reflected by a subject. The storage unit contains first biometric information. The illuminance sensor detects the illuminance corresponding to the ambient light received by the display unit. When the illuminance detected by the illuminance sensor is below a first value, the light-receiving elements receive light during a first detection period. During the first detection period, the light-emitting elements emit light at a first brightness. When the illuminance detected by the illuminance sensor is high... At the first value, the light-receiving element receives light during a second detection period shorter than the first detection period. During the second detection period, the light-emitting element emits light at a second brightness higher than the first brightness. The electronic device has the function of acquiring processed content based on a verification code and the function of acquiring second biometric information and approving processed content based on comparison with the first biometric information. The verification code is acquired by using an image containing the verification code as the first subject and detecting reflected light from the first subject by multiple light-receiving elements. The second biometric information is acquired by using a finger or palm as the second subject and detecting reflected light from the second subject by multiple light-receiving elements.

[0032] In addition, in the above-described manner, it is preferred that the light-emitting element includes a first electrode and a second electrode and a first light-emitting layer located between the first electrode and the second electrode, the current control unit includes a first terminal and a second terminal connected to the second electrode, the first electrodes of each light-emitting element included in the plurality of pixel circuits are connected to each other, the first terminals of each current control unit included in the plurality of pixel circuits are connected to each other, and the potential difference between the potential of the first terminal and the first electrode when emitting light at the second brightness is greater than the potential difference between the potential of the first terminal and the first electrode when emitting light at the first brightness.

[0033] In addition, in the above-described manner, it is preferred that the current control unit includes a first transistor, one of the source and drain of the first transistor is connected to a first terminal, and the other of the source and drain of the first transistor is connected to a second terminal.

[0034] In addition, in the above-described manner, it is preferable that the current control unit includes a first transistor, and when the light-emitting element emits light, one of the source and drain of the first transistor is supplied with a potential corresponding to the first terminal, and the current of the light-emitting element is controlled by the first transistor.

[0035] In addition, in the above methods, it is preferable that the verification code is a barcode or a QR code.

[0036] In addition, in the above method, it is preferable that the product of the first brightness and the first detection period duration is more than 0.8 times and less than 1.2 times the product of the second brightness and the second detection period duration.

[0037] In addition, in the above-described manner, it is preferred that the light-receiving element includes a third electrode and a fourth electrode and an active layer located between the third electrode and the fourth electrode, the third electrodes included in the light-receiving element are connected to each other, and the third electrodes included in the light-receiving element and the first electrodes of the light-emitting elements included in the plurality of pixel circuits are supplied with the same potential.

[0038] In addition, in the above-described manner, it is preferable that the light-receiving element includes a second light-emitting layer, which is located between the third electrode and the fourth electrode.

[0039] In addition, in the above-described manner, it is preferable that the light-emitting element has the function of emitting light selected from one of the three colors: red, green, and blue, and the light-receiving element has the function of emitting light selected from another of the three colors and receiving visible light.

[0040] In addition, in the above-described manner, it is preferable that the light-emitting element has the function of emitting light selected from one of the three colors: red, green, and blue, and the light-receiving element has the function of emitting light selected from another of the three colors and receiving infrared light.

[0041] Furthermore, in the above-described manner, it is preferable that the potential of the first electrode when emitting light at the second brightness is lower than the potential of the first electrode when emitting light at the first brightness.

[0042] Furthermore, in the above-described manner, it is preferable that the potential of the first terminal when emitting light at a second brightness is higher than the potential of the first terminal when emitting light at a first brightness.

[0043] Another aspect of the present invention is a program executed by an electronic device, the electronic device including a display unit having multiple light-receiving elements and a storage unit, the program including the following steps: a first step, using an image containing a verification code as a first subject, displaying a first image at a first brightness on the display unit as a light source, the multiple light-receiving elements detecting reflected light reflected by the first subject during a first detection period; a second step, acquiring a captured image of the verification code using the reflected light detected in the first step; a third step, displaying first processing content based on the verification code on the display unit; a fourth step, configuring a first finger in a manner that touches or approaches the display unit; a fifth step, using the first finger as a second subject, displaying a second image at a second brightness on the display unit as a light source. The image is processed in the following steps: First, multiple light-receiving elements detect reflected light from the second subject during the second detection period. Second, a camera image of the first finger is acquired using the reflected light detected in the fifth step. Third, fingerprint information of the first finger is obtained from the camera image and compared with fingerprint information of the second finger stored in the storage unit. Fourth, the fingerprint information of the first finger is confirmed to match the fingerprint information of the second finger through comparison, and the first processing is performed. If the image quality of the camera image acquired in the sixth step is verified and it is determined that another camera image needs to be acquired, the fifth and sixth steps are performed again. During the second fifth step, the second brightness is higher and the second detection period is shorter compared to the first step.

[0044] In addition, in the above method, it is preferable that the product of the first brightness and the first detection period duration is more than 0.8 times and less than 1.2 times the product of the second brightness and the second detection period duration.

[0045] Invention Effects

[0046] According to one aspect of the present invention, a display unit with light detection function can be provided. Additionally, according to one aspect of the present invention, a high-definition display unit with light detection function can be provided. Furthermore, according to one aspect of the present invention, a display device with light detection function can be provided. Furthermore, according to one aspect of the present invention, a high-definition display device with light detection function can be provided. Furthermore, according to one aspect of the present invention, an electronic device with display function can be provided. Furthermore, according to one aspect of the present invention, an electronic device with light detection function can be provided. Furthermore, according to one aspect of the present invention, an electronic device with identification function, such as fingerprint recognition, can be provided. Furthermore, according to one aspect of the present invention, a highly secure electronic device can be provided. Furthermore, according to one aspect of the present invention, a highly operable electronic device can be provided. Furthermore, according to one aspect of the present invention, a multifunctional electronic device can be provided. Furthermore, according to one aspect of the present invention, a novel electronic device can be provided. Furthermore, according to one aspect of the present invention, an electronic device with a highly secure identification method can be provided. Furthermore, according to one aspect of the present invention, an electronic device with a novel operating method can be provided. Furthermore, according to one aspect of the present invention, an electronic device with a novel identification method can be provided.

[0047] Furthermore, according to one aspect of the present invention, a program for executing on a highly secure electronic device can be provided. Furthermore, according to one aspect of the present invention, a program for executing on a novel electronic device can be provided. Furthermore, according to one aspect of the present invention, a novel program can be provided.

[0048] Note that the description of the effects does not preclude the existence of other effects. One aspect of the invention does not necessarily need to have all the described effects. Effects other than those described can be extracted from the description, drawings, claims, etc.

[0049] Brief description of the attached figures

[0050] Figure 1A This is a diagram illustrating an example of the structure of an electronic device. Figure 1B This is a diagram illustrating an example of the structure of an electronic device. Figure 1C and Figure 1D This is a diagram illustrating an example of a pixel circuit.

[0051] Figure 2 This is a diagram illustrating an example of how an electronic device works.

[0052] Figure 3A and Figure 3B This is a diagram illustrating an example of how an electronic device works.

[0053] Figure 4 This is a flowchart illustrating an example of how an electronic device works.

[0054] Figure 5A and Figure 5B This is a diagram illustrating an example of how an electronic device works.

[0055] Figure 6A and Figure 6B This is a diagram showing an example of the structure of the display section. Figures 6C to 6F This is a diagram showing an example of the structure of a pixel.

[0056] Figure 7A and Figure 7B This is a timing diagram illustrating an example of the operation of an electronic device. Figure 7C This is a diagram illustrating an example of a pixel circuit.

[0057] Figure 8 This is a flowchart illustrating an example of how an electronic device works.

[0058] Figures 9A to 9C This is a diagram illustrating an example of how an electronic device works.

[0059] Figure 10A and Figure 10B This is a diagram illustrating an example of how an electronic device works.

[0060] Figure 11 This is a diagram illustrating an example of how an electronic device works.

[0061] Figures 12A to 12D This is a diagram illustrating an example of the structure of an electronic device.

[0062] Figures 13A to 13D This is a diagram illustrating an example of the structure of an electronic device.

[0063] Figures 14A to 14C This is a diagram illustrating an example of an electronic device.

[0064] Figure 15A and Figure 15B This is a diagram illustrating an example of the structure of an electronic device.

[0065] Figure 16A and Figure 16B This is a diagram illustrating an example of the structure of an electronic device.

[0066] Figure 17A and Figure 17B This is a diagram illustrating an example of the structure of an electronic device.

[0067] Figures 18A to 18D This is a diagram illustrating an example of the structure of an electronic device.

[0068] Figure 19A This is a diagram showing an example of a subject. Figure 19B This is a diagram illustrating an example of the structure of an electronic device. Figure 19C It is a diagram showing the electronic device and the subject.

[0069] Figure 20A It is a diagram showing the electronic device and the subject. Figure 20B and Figure 20C This is a diagram illustrating an example of the structure of an electronic device.

[0070] Figures 21A to 21I This is a diagram showing an example of pixels.

[0071] Figure 22A and Figure 22B This is a circuit diagram showing an example of a pixel circuit. Figure 22C This is a timing diagram illustrating an example of how a pixel circuit works.

[0072] Figure 23A This is a diagram showing an example of the structure of a display device. Figure 23B This is a circuit diagram showing an example of a pixel circuit.

[0073] Figures 24A to 24C This is a circuit diagram showing an example of a pixel circuit.

[0074] Figure 25A and Figure 25B This is a circuit diagram showing an example of a pixel circuit.

[0075] Figure 26A , Figure 26B and Figure 26D This is a cross-sectional view showing an example of a display device. Figure 26C and Figure 26E This is a diagram showing an example of an image. Figures 26F to 26H This is a top view showing an example of pixels.

[0076] Figure 27A This is a cross-sectional view showing an example of the structure of a display device. Figures 27B to 27D This is a top view showing an example of pixels. Figure 27E This is a diagram showing an example of an image.

[0077] Figure 28A This is a cross-sectional view showing an example of the structure of a display device. Figures 28B to 28I This is a top view showing an example of pixels.

[0078] Figures 29A to 29F This is a diagram showing an example of the structure of a light-emitting element.

[0079] Figure 30A and Figure 30B This is a diagram showing an example of the structure of a light-emitting element and a light-receiving element.

[0080] Figure 31Aand Figure 31B This is a diagram showing an example of the structure of a display device.

[0081] Figures 32A to 32D This is a diagram showing an example of the structure of a display device.

[0082] Figures 33A to 33C This is a diagram showing an example of the structure of a display device.

[0083] Figures 34A to 34D This is a diagram showing an example of the structure of a display device.

[0084] Figures 35A to 35F This is a diagram showing an example of the structure of a display device.

[0085] Figures 36A to 36F This is a diagram showing an example of the structure of a display device.

[0086] Figure 37 This is a diagram showing an example of the structure of a display device.

[0087] Figure 38A This is a cross-sectional view showing an example of a display device. Figure 38B This is a cross-sectional view showing an example of a transistor.

[0088] Figures 39A to 39F This is a diagram illustrating an example of the structure of an electronic device.

[0089] Methods of implementing the invention

[0090] The embodiments will now be described with reference to the accompanying drawings. However, those skilled in the art will readily understand that the embodiments can be implemented in many different forms, and their manner and details can be varied in various ways without departing from the spirit and scope of the invention. Therefore, the invention should not be construed as being limited to the contents described in the embodiments shown below.

[0091] Note that in the structure of the invention described below, the same reference numerals are used in different figures to indicate the same parts or parts having the same function, and repeated descriptions are omitted. Furthermore, when indicating parts having the same function, the same shading lines are sometimes used without additional symbols.

[0092] Note that in the various figures described in this specification, the size of the constituent elements, the thickness of the layers, or the area are sometimes exaggerated for clarity. Therefore, the invention is not limited to the dimensions shown in the figures.

[0093] The ordinal numbers such as "first" and "second" used in this specification are appended to avoid confusion of the constituent elements, and are not intended to limit the quantity.

[0094] Note that the following descriptions of directions such as "upper" and "lower" are generally used in accordance with the directions in the accompanying drawings. However, for the sake of simplicity, the directions indicated by "upper" or "lower" in the specification are sometimes inconsistent with those in the accompanying drawings. For example, when describing the stacking sequence (or formation sequence) of laminates, etc., even if the surface on the side where the laminate is located (the surface to be formed, the supporting surface, the adhesive surface, the flat surface, etc.) is located on the upper side of the laminate in the accompanying drawings, it is sometimes stated that the surface to be formed is located on the lower side, or that the laminate is located on the upper side, etc.

[0095] Note that in this specification, the display unit refers to the part that can display (output) images, etc. on the display surface. Therefore, the display unit is one type of output device.

[0096] Furthermore, in this specification and the like, a display panel refers to a panel capable of displaying (outputting) images, etc. Therefore, a display panel is one type of output device.

[0097] Furthermore, in this specification and other documents, structures in which connectors such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) are mounted on the substrate of a display panel, or structures in which ICs are directly mounted on the substrate in a COG (Chip On Glass) manner, are sometimes referred to as display panel modules or display modules, or simply display panels, etc.

[0098] Note that in this specification, the touch panel has the following functions: displaying images on the display surface; and functioning as a touch sensor to detect when a detected object such as a finger or stylus touches, presses, or approaches the display surface. Therefore, the touch panel is a type of input / output device.

[0099] A touch panel can also be referred to as a display panel (or display device) with a touch sensor, or a display panel (or display device) with touch sensor functionality. A touch panel may also include a display panel and a touch sensor panel. Alternatively, it may have a structure in which a touch sensor is located inside or on the surface of the display panel.

[0100] In this specification and other documents, a structure selected from connectors, ICs, etc., mounted on the substrate of a touch panel is sometimes referred to as a touch panel module, display module, or simply touch panel.

[0101] (Implementation Method 1)

[0102] In this embodiment, an electronic device according to one aspect of the present invention is described.

[0103] One aspect of the electronic device of the present invention includes a display unit. The display unit has the functions of emitting light and receiving light. Preferably, the display unit has the function of detecting touch operation.

[0104] The display unit can display images. Additionally, the display unit can use the displayed image as a light source and receive light. For example, it can use the displayed image as a light source and receive light reflected from the subject (object) to obtain information such as light intensity and wavelength.

[0105] The display section includes multiple light-emitting elements and multiple light-receiving elements. The multiple light-emitting elements are preferably arranged in a matrix. Similarly, the multiple light-receiving elements are preferably arranged in a matrix.

[0106] A subject can be photographed using multiple light-receiving elements configured in a matrix. Additionally, light-emitting elements can be arranged around each of the multiple light-receiving elements configured in a matrix. The light-receiving elements can receive reflected light emitted from the surrounding light-emitting elements.

[0107] Additionally, the display unit may include a plurality of pixels configured in a matrix. Each of the plurality of pixels may, for example, include one or more light-emitting elements and light-receiving elements. Each of the plurality of pixels may, for example, include one or more light-emitting elements and one or more light-receiving elements. Alternatively, each of the plurality of pixels may include only one of a light-emitting element and a light-receiving element. When a pixel includes multiple light-emitting elements, it may include, for example, multiple light-emitting elements that emit light in different wavelength regions. Furthermore, when a pixel includes multiple light-receiving elements, it may include, for example, multiple light-receiving elements corresponding to different wavelength regions.

[0108] Electronic devices may include a sensor unit.

[0109] A portion of the light emitted by the light-emitting elements in the display unit is reflected by the subject, and this reflected light is incident on the light-receiving element. The light-receiving element can output an electrical signal based on the intensity of the incident light. Therefore, by including light-receiving elements configured in a matrix, the display unit can acquire (also known as capture) the positional information and shape of a subject that touches or approaches the display unit. In other words, the display unit has the function of displaying images and can be used as an image sensor panel or an optical sensor. Thus, it is sometimes stated that the display unit is used as part of the sensor unit of an electronic device.

[0110] Additionally, the sensor unit may include a touch sensor, an illuminance sensor, etc. In one embodiment of the present invention, the display unit can be used as an optical sensor, which can be used to detect contact or proximity to the surface of the display unit. Therefore, it can be stated that the display unit is used as a touch sensor.

[0111] Alternatively, the sensor section may include a touch sensor that is not located in the display section.

[0112] One aspect of the present invention provides an electronic device that has the function of acquiring a photographic image of a subject that touches or approaches the display unit using a plurality of light-receiving elements arranged in the display unit.

[0113] One aspect of the present invention provides an electronic device that has the function of acquiring recognition information from a camera image.

[0114] Biometric information can be obtained as identification information. For example, identification information can be obtained using a finger or palm as the subject to be photographed. When the subject is a finger, an image of a fingerprint can be used as identification information. When the subject is a palm, an image of a palm print can be used as identification information.

[0115] For example, an image containing a verification code can be used as the subject to obtain verification code-based identification information. Examples of verification codes include barcodes and QR codes. Furthermore, the identification information is not limited to these codes. The identification information can include text information. Text information can be photographed and extracted by performing text recognition in the control circuitry of an electronic device; this extracted text data can then be used for identification.

[0116] Note that identification information such as verification codes may also have areas that can be deciphered using passwords. In one aspect of the present invention, the storage unit of an electronic device can store password information and, when reading a verification code, read the identification information by combining it with the password.

[0117] For example, by including user-related information in areas that can be decrypted, personal information can be protected and managed. Additionally, for convenience, identification information such as CAPTCHAs can also have areas that do not require password decryption. This allows information that is intended to be widely disclosed without password decryption, such as confidential information that does not contain personal information and is widely shared among multiple users.

[0118] <Example 1 of the structure of an electronic device>

[0119] Figure 1A A block diagram illustrating an electronic device 420 according to one embodiment of the present invention is shown. The electronic device 420 includes a control circuit unit 401, a display unit 422, a sensor unit 403, and a storage unit 404. The control circuit unit 401 includes an identification unit 407. The display unit 422 includes a light-emitting element 405 and a light-receiving element 406. The electronic device 420 can be applied, for example, to portable information terminals.

[0120] Note that the accompanying drawings in this specification show the constituent elements categorized according to their function in separate boxes. However, in reality, constituent elements are difficult to clearly classify according to function, and a single constituent element may sometimes have multiple functions. Furthermore, it is possible for multiple constituent elements to achieve a single function.

[0121] The control circuit unit 401 has the function of comprehensively controlling the system of the electronic device 420. Furthermore, the control circuit unit 401 has the function of comprehensively controlling each component included in the electronic device 420. The control circuit unit 401 may include a scan line drive circuit and a signal line drive circuit.

[0122] The control circuit unit 401 is used, for example, as a central processing unit (CPU). The control circuit unit 401 performs various data processing or program control by interpreting and executing instructions from various programs. Programs that can be executed by the processor can be stored in the processor's memory area or in the storage unit 404.

[0123] The control circuit section 401 has the following functions: generating image data to be output to the display section 422; processing identification information input from the light-receiving element 406 of the display section 422; and controlling the lock state of the electronic device 420.

[0124] The identification unit 407 has the function of performing identification processing using identification information.

[0125] Display unit 422 has the function of displaying an image using light-emitting element 405 based on image data input from control circuit unit 401. Display unit 422 can capture images of a subject that touches or approaches display unit 422. For example, a portion of the light emitted by light-emitting element 405 is reflected by the subject, and this reflected light is incident on light-receiving element 406. The light-receiving element can output an electrical signal corresponding to the intensity of the incident light, and display unit 422, by including a plurality of light-receiving elements 406 arranged in a matrix, can acquire (capture) the position information and shape of the subject as data. It can be said that display unit 422 is used as an image sensor panel or an optical sensor.

[0126] The display unit 422, used as an optical sensor, can acquire light color information in addition to light intensity information. Therefore, the display unit 422 can acquire the color information of the subject. By using color information, recognition accuracy is increased, thereby improving security. Note that when acquiring light color information, for example, a color filter can be provided on the light-receiving element to acquire the color corresponding to that filter. Alternatively, in an image used as a light source, light of different wavelengths can be sequentially illuminated and the imaging data corresponding to each illumination period can be analyzed to acquire light color information.

[0127] The sensor unit 403 includes an illuminance sensor. The illuminance sensor can obtain the intensity of the ambient light illuminating the operating environment of the electronic device 420, and more specifically, for example, it can obtain the illuminance of the ambient light illuminating the display unit 422. In addition to the illuminance of the ambient light, the illuminance sensor can also obtain information such as the color and wavelength of the ambient light.

[0128] Additionally, the sensor unit 403 may include ultrasonic sensors, optical sensors, and electrostatic capacitive sensors. These sensors can be used, for example, as touch sensors. Furthermore, these sensors can be used to acquire information about the subject. For example, if the subject is a finger, information about the finger can also be acquired.

[0129] Ultrasonic sensors detect reflected waves from a subject by emitting ultrasonic waves, thus acquiring three-dimensional information about the subject's contours. Since ultrasonic waves penetrate the skin, when the subject is a human finger, in addition to the finger's contours (fingerprint), blood flow within the skin can also be detected. Alternatively, after acquiring a first image of the fingerprint using the light-receiving element of the display unit 422 as the first identification information, a second image of the fingerprint can be acquired using the ultrasonic sensor as the second identification information. By acquiring identification information through multiple different methods, security can be improved.

[0130] The control circuit unit 401 has the function of performing approval processing when the identification performed by the identification unit 407 is approved.

[0131] The identification unit 407 has the function of locking the electronic device 420. Furthermore, the identification unit has the function of transitioning the electronic device from a locked state to a state where the lock is released and the electronic device 420 can be used. Fingerprint recognition can be used as this identification method.

[0132] When performing fingerprint recognition in the control circuit section 401, it may also have the function of generating image data and outputting the image data to the display section 422. The image data includes an image showing the location that the user can touch with their finger (also known as an image indicating the touch location).

[0133] When the subject to be photographed is a finger, the display unit 422 has the function of acquiring the user's identification information using the light-receiving element 406 and outputting the identification information to the control circuit unit 401. For example, the identification information can be an image of the user's fingerprint touching the display unit 422 (also called a photographic image or photographic data). By capturing an image of the user's fingerprint touching the display unit 422 using the light-receiving element 406, the display unit 422 can acquire identification information.

[0134] Since the display unit 422, which is used as an optical sensor, can acquire color information of the subject, the identification information can also include color information. For example, when the subject is a finger, skin color information can be acquired in addition to fingerprint information as identification information.

[0135] The storage unit 404 has the function of storing user information of pre-registered users. User information may include, for example, the user's fingerprint information. The storage unit 404 can output user information to the identification unit 407 according to the requirements of the control circuit unit 401.

[0136] The storage unit 404 can store the fingerprint information of the finger used by the user for identification, and can freely register more than one finger's information. For example, it can store the fingerprint information of the index finger of the user's right hand and the index finger of the user's left hand. In addition to the index finger, the user can also freely register the fingerprint information of one or more of the middle finger, ring finger, little finger, and thumb, and the storage unit 404 can store all the registered fingerprint information.

[0137] The identification unit 407 has the function of performing a process (identification processing) to compare the identification information input from the display unit 422 with the information stored in the storage unit 404 and determine whether they are consistent.

[0138] As a recognition process, methods such as template matching or pattern matching, which compare two images to determine their similarity, can be used. Alternatively, the recognition process can utilize minutiae (features of the endpoints and branch points of patterns in the images). Furthermore, recognition processing can employ inference based on machine learning. Recognition processing using inference from neural networks is particularly preferred.

[0139] Figure 1B This is a perspective view showing an example of an electronic device 420. Figure 1B The illustrated electronic device 420 includes a housing 421 and a display unit 422. Within the housing 421, the electronic device 420 includes a control circuit unit 401, a sensor unit 403, and a storage unit 404.

[0140] The sensor unit 403 includes an illuminance sensor 432. The illuminance sensor 432 is located, for example, on or near the surface of the housing 421 on the side where the display unit 422 is located. The illuminance sensor 432 can detect the illuminance corresponding to the ambient light received by the display unit 422.

[0141] Electronic device 420 includes camera 431. Electronic device 420 has the functions of using camera 431 to capture still images or moving images and storing them in a storage unit, and displaying captured images on a display unit, etc.

[0142] The camera 431 is located, for example, on or near the surface of the frame 421 on the side where the display unit 422 is located. The camera 431 is sometimes referred to as a front-facing camera. The camera 431 preferably includes a wide-angle lens. The camera 431 can be appropriately used when photographing a subject that is farther away from the display unit 422 than a subject photographed using the light-receiving element included in the display unit 422.

[0143] An image is displayed on the display unit 422, and the image can be used as a flash to take a picture with the camera 431. Figure 2 An example is shown below: User 433 displays an image on display unit 422 of electronic device 420, and uses the image as a flash to take an image including user 433 himself using camera 431. Figure 2 An example is shown where area 483 is illuminated in display unit 422 and used as a flash. Although Figure 2 The example shown is of region 483 covering the entire surface of display unit 422, but region 483 can also be a portion of display unit 422. In region 483, all pixels can be illuminated, and regular patterns such as houndstooth or stripes can be displayed. Furthermore, as a flash display, for example, a white display can be used. Moreover, when displaying as a flash, the color temperature of the displayed color can be set. For example, more than two specified color temperatures can be selected. Setting the color temperature to a reddish tone, such as human skin tone, makes it look more natural, and is therefore sometimes preferred.

[0144] In one aspect of the electronic device and display unit of the present invention, the brightness of the light-emitting element sometimes refers to, for example, the average brightness of a region comprising multiple pixels.

[0145] [Pixel Circuit]

[0146] A pixel includes one or more pixel circuits. A pixel circuit includes one light-emitting element. Alternatively, a pixel circuit includes one light-receiving element. Alternatively, a pixel circuit may also include one light-emitting element and one light-receiving element. Furthermore, a pixel circuit may also include two or more light-emitting elements. Additionally, a pixel circuit may include two or more light-receiving elements. Note that... Figure 1C The pixel circuit shown can be widely used in display elements. For example, it can also be used in liquid crystal elements. In addition, it is not limited to display elements, but can also be used in storage elements to maintain the state corresponding to data.

[0147] The pixel circuit preferably includes one or more transistors.

[0148] exist Figure 1C In the diagram, pixel circuit PX1 is shown as a pixel circuit including a light-emitting element, and pixel circuit PX2 is shown as a pixel circuit including a light-receiving element.

[0149] exist Figure 1C In this circuit, pixel circuit PX1 includes a light-emitting element EM and a current control unit CU. The current control unit CU controls the current of the light-emitting element EM. Additionally, pixel circuit PX1 includes a signal supply unit SE. The signal supply unit SE supplies signals based on scan signals supplied from wiring GL and image signals supplied from wiring SL to the current control unit CU. Wiring GL is sometimes referred to as a scan line, and wiring SL is sometimes referred to as a signal line.

[0150] One terminal of the light-emitting element (EM) is connected to the wiring CAT. The potential of the wiring CAT is sometimes referred to as the cathode potential.

[0151] One terminal of the current control unit CU is connected to the wiring ANO. The potential of the wiring ANO is sometimes referred to as the anode potential. The other terminal of the current control unit CU is connected to the other terminal of the light-emitting element EM.

[0152] The current control unit includes a current control transistor. This current control transistor can also be called a drive transistor. The current control transistor has the function of controlling the current of the light-emitting element (EM). By controlling the current of the light-emitting element (EM), for example, the brightness of the light-emitting element (EM) can be controlled.

[0153] The pixel circuit PX2 includes a light-receiving element IG. One terminal of the light-receiving element IG is connected to the wiring CAT.

[0154] Figure 1D An example of pixel PX1 is shown, in which transistor M2 is used as the current control unit and transistor M1 is used as the signal supply unit.

[0155] Note that in Figure 1D In this configuration, one of the source and drain of transistor M2 is connected to the light-emitting element. However, it is also possible to use a structure where one of the source and drain of transistor M2 is connected to the light-emitting element through more than one transistor. Furthermore, although in Figure 1D One of the source and drain of transistor M2 is connected to wiring ANO, but a structure in which transistor M2 is connected to wiring ANO through more than one transistor can also be used.

[0156] Here is an example illustrating how the pixel circuit PX1 works. Figure 1D Let's take an example. First, during the first period, by supplying a potential to turn on transistor M1 to wiring GL (e.g., supplying a high-level potential), and supplying an image signal to wiring SL, transistor M1 becomes conductive, and the gate of transistor M2 is supplied with the image signal. At this time, when a reset signal is supplied to the other terminal of the light-emitting element EM, the light-emitting element EM can also be made to be in a non-light-emitting state.

[0157] During the subsequent second period, a signal is supplied to wiring GL to turn off transistor M1, for example, by supplying a low-level potential. The gate potential of transistor M2 is maintained, and a current corresponding to the gate potential of transistor M2 flows through the light-emitting element EM. During the second period, writing proceeds for the next row and beyond.

[0158] Alternatively, a pixel circuit can be constructed comprising both a light-emitting element and a light-receiving element. In this case, the pixel circuit has a circuit region corresponding to the light-emitting element and a circuit region controlling the light-receiving element.

[0159] In addition, sometimes adjacent pixel circuits share a portion. For example, they sometimes share wiring, electrodes, etc.

[0160] In one embodiment of the display unit of the present invention, the transistors included in pixel circuit PX1 and pixel circuit PX2 can be disposed in the same layer, and the light-emitting element EM and the light-receiving element IG can be disposed on the layer where the transistors are disposed. By adopting this structure, the heights of the areas where the light-emitting element EM and the light-receiving element IG are disposed can be made approximately the same. When the distance between the light-emitting element and the light-receiving element is shortened, the detection performance of the light-receiving element can be improved.

[0161] The light-emitting element includes a pair of electrodes (e.g., a lower electrode and an upper electrode) and a light-emitting layer located between the electrodes. The light-receiving element includes a pair of electrodes (e.g., a lower electrode and an upper electrode) and an active layer located between the electrodes. When the above structure is adopted, one electrode of the light-emitting element (e.g., the upper electrode) and one electrode of the light-receiving element (e.g., the upper electrode) can be a common electrode. This common electrode can be arranged across multiple light-emitting elements and multiple light-receiving elements.

[0162] A pixel may include multiple subpixels. Each subpixel may include pixel circuitry. Furthermore, in this specification and other materials, a subpixel sometimes refers to pixel circuitry.

[0163] One aspect of the electronic device of the present invention includes circuitry for driving pixels. Examples of such circuitry include scan line driving circuitry and signal line driving circuitry.

[0164] A display device can be used in an electronic device according to one aspect of the present invention. The display device may include, for example, a display unit, a scan line driving circuit, and a signal line driving circuit. Alternatively, the display device may not include the scan line driving circuit and the signal line driving circuit. For example, the display device may not include part or all of the signal line driving circuit.

[0165] Furthermore, the display device may include a touch sensor panel, for example, as a touch sensor. Note that the display device may also not include a touch sensor.

[0166] <Example of a work method 1>

[0167] The following is an example illustrating the operation of electronic device 420. Here, the process of photographing a subject is explained.

[0168] Figure 3A and Figure 3B This is a schematic diagram illustrating the operation of the light-receiving element in detecting reflected light emitted from the display unit 422 and reflected by the subject when the apparent brightness of the ambient light is different. Figure 3A and Figure 3B An example is shown where the subject is a user's finger. This is an example of a situation with high ambient light intensity. Figure 3A This indicates outdoor work on a sunny day, where the ambient light illuminance is lower than [previous value]. Figure 3A Examples of time, Figure 3B This shows the work under indoor lighting.

[0169] exist Figure 3A In, the illuminance of ambient light and Figure 3B Therefore, it is preferable to further improve the detection sensitivity of the light-receiving element. For example, the detection sensitivity can be further improved by increasing the brightness of the light emitted from the light-emitting element.

[0170] Figure 4 A flowchart showing the operation of electronic device 420 is provided.

[0171] In step S500, the processing of this procedure begins.

[0172] Next, in step S501, the subject is detected. For example, the electronic device detects that the subject is in contact with or near the surface of the display unit. Alternatively, the subject may not be detected. In this case, for example, in step S501, the electronic device displays an instruction on the display unit to configure the subject, and the user configures the subject according to the instruction.

[0173] This instruction may, for example, display a location image used to inform the user of the subject's configuration position.

[0174] Next, in step S502, the number of processing times x (x is an integer greater than or equal to 1) is set to 1, and the brightness L of the area used as the camera light source and the detection period t of the light-receiving element 406 are set for the first image displayed on the display unit in step S503. Sometimes the detection period of the light-receiving element 406 is expressed as the exposure time. Here, the brightness L is set to L(1), and the time t is set to t(1).

[0175] Next, in step S503, in the first image, the area used as a camera light source is displayed on the display unit at a brightness L. The light emitted from the light-emitting element 405 can be used as a light source when taking a picture using the light-receiving element 406. Therefore, the light emitted by the light-emitting element 405, which is lit in the area used as a camera light source when displaying the first image, can be light of a color that the light-receiving element 406 can receive. For example, when the display unit 422 includes light-emitting elements 405 of three colors: red (R), green (G), and blue (B), any one, two, or three of the light-emitting elements 405 of the above colors can be lit.

[0176] In step S503, all light-emitting elements 405 in the display unit 422 can be lit up, or only a portion of the light-emitting elements 405 in the display unit 422 can be lit up. Figure 3A and Figure 3B The area 425 of the display unit 422, which is used as a camera light source, is shown. Figure 3A and Figure 3B An example is shown of all the light-emitting elements 405 in the display section 422, which are illuminated as area 425. Area 425 can be used as a camera light source. Figure 3A and Figure 3B In this process, the first image can be described as a white or specified color image displayed on the entire surface of the display unit 422. Area 425 is the area where the subject is detected in the subsequent step S504. The user covers or touches area 425 with the subject, thereby obtaining a camera image.

[0177] The brightness L can be the brightness of area 425.

[0178] When a portion of the light-emitting elements 405 in the display unit 422 is illuminated, that is, when a portion of the display unit 422 is designated as area 425, the user can capture an image by covering or touching area 425 with a subject. Alternatively, the light-emitting elements 405 outside area 425 can be turned off. By covering the illuminated light-emitting elements 405 in area 425 with the subject, the user is prevented from seeing bright light. For example, in dimly lit environments, the user may experience glare when directly seeing the display light of the first image, and there is a risk of eye injury. Therefore, by designating only area 425 as a portion of the display unit, the user's burden is reduced. Furthermore, any image can be displayed outside area 425.

[0179] Figure 5A This illustrates an example where the light-emitting element 405 illuminates area 425 of the display section 422 while other areas are extinguished. Figure 5AIn this context, the first image can be described as a white or specified color displayed across the entire surface of region 425 of the display unit 422, while other areas are displayed as black. Alternatively, non-black colors darker than region 425 can be displayed in areas outside region 425. Preferably, the brightness of areas outside region 425 is lower than that of region 425.

[0180] When a pixel includes light-emitting elements corresponding to the three colors red (R), green (G), and blue (B), for example, all pixels of R, G, and B can be lit in area 425. Alternatively, any one of R, G, and B may not be lit. For example, any single color of R, G, and B may be lit.

[0181] Alternatively, all pixels in region 425 can be left unlit. For example, as shown below. Figure 6A As shown, in area 425, the pixels 30 to be lit (hereinafter referred to as pixel 30[w]) and the pixels 30 to be turned off (hereinafter referred to as pixel 30[b]) can also be displayed as a houndstooth pattern. Or, as Figure 6B As shown, an image with pixels 30[w] and 30[b] configured as stripes can also be displayed in area 425. Alternatively, pixels 30[w] and 30[b] can be configured randomly. Pixels 30[w] and 30[b] should be configured so that the light illuminating the subject is uniform within a range that does not affect the image quality of the captured image.

[0182] Figures 6C to 6F The illumination state of the sub-pixels included in pixel 30 is shown. Pixel 30 includes a sub-pixel R having a light-emitting element corresponding to red, a sub-pixel G having a light-emitting element corresponding to green, a sub-pixel B having a light-emitting element corresponding to blue, and a sub-pixel PS having a light-receiving element.

[0183] Figure 6C and Figure 6D An example of the lit state of a sub-pixel of pixel 30 (pixel 30[b]) that is to be turned off in region 425 is shown. Figure 6C An example is shown where the light-emitting elements corresponding to all colors are turned off and the light-receiving elements are not driven. Figure 6D An example is shown where the light-emitting elements corresponding to all colors are turned off while the light-receiving elements are driven.

[0184] Figure 6E and Figure 6F An example of the illumination state of a sub-pixel of pixel 30 (pixel 30[w]) to be illuminated in region 425 is shown. Figure 6E This shows an example of illuminating light-emitting elements corresponding to all colors and driving light-receiving elements. Figure 6F This example shows only the green light-emitting element among all the light-emitting elements being lit, and the light-receiving element being driven.

[0185] in addition, Figure 5B An example is shown below: a white or specified color is displayed as the first image across the entire surface of area 425, while images displaying information such as text 481 and image 482 are used in other areas. Text 481 could, for example, be a prompt reminding the user to place their finger on the display unit 422.

[0186] Next, in step S504, the first image is used as a light source to capture the subject. During capture, the detection period of the light-receiving element 406 is time t. In step S504, the electronic device uses the signal detected by the light-receiving element 406 to acquire a captured image of the subject.

[0187] Next, in step S505, it is determined whether to use the camera image obtained in step S504. Specifically, for example, it is determined whether the image quality of the camera image is sufficient to obtain the subject information. If the image quality is sufficient, the image is used; if the image quality is insufficient, the image is not used.

[0188] When using a camera image, proceed to step S509; when not using a camera image, proceed to step S506.

[0189] In step S506, the number of processing steps x is incremented by 1 (x is x+1).

[0190] In step S507, it is determined whether the number of processing attempts x is less than n (n is an integer greater than or equal to 1). If the number of processing attempts reaches n, the process proceeds to step S511 and ends. Additionally, in step S511, the control circuit of the electronic device receives information indicating that processing has ended and that no image was acquired. If the number of processing attempts has not reached n, the process proceeds to step S508.

[0191] In step S508, the brightness L of the first image displayed on the display unit in step S503 and the detection period t of the light-receiving element 406 are set again. The brightness L is set to L(x) and the time t is set to t(x).

[0192] Light emitted from the light-emitting element 405 is reflected by the subject and enters the light-receiving element 406. In addition, ambient light also enters the light-receiving element 406. This ambient light can potentially become noise when forming a photographic image of the subject. In particular, as... Figure 3A As shown in the example, when the ambient light is bright, the noise component in the camera image increases, which may lead to a decrease in image quality.

[0193] Therefore, when the ambient light intensity is high, it is preferable to reduce the noise component by increasing the brightness of the light-emitting element 405.

[0194] In step 508, for example, if the ambient light illuminance exceeds a predetermined value, the value of luminance L is set to a higher value than in the previous process. Furthermore, setting luminance L to a higher value can increase the intensity of reflected light incident on the light-receiving element 406, thereby enabling sufficient light detection even in a shorter detection period. Thus, luminance L is set to a higher value, while time t is set to a lower value.

[0195] For example, when the brightness L is to be A times, it is preferable to set the time t to be approximately 1 / A times. In other words, it is preferable to set the time t to be approximately constant as the product of brightness L and time t. Here, L(x) is A times L(1), and time t(x) is 1 / A times time t(1).

[0196] The product of brightness L and time t can be set to be more than 0.8 times and less than 1.2 times, more than 0.85 times and less than 1.15 times, or more than 0.9 times and less than 1.1 times that of the product of brightness L and time t in the previous process.

[0197] After step S508, return to step S503 and repeat steps S503 to S505. If the camera image is not used in step S505, proceed to step S506; if the camera image is used in step S505, proceed to step S509.

[0198] In step S509, the captured image is obtained. In step S510, the process ends.

[0199] In one aspect of the electronic device and display unit of the present invention, the brightness of the light-emitting element sometimes refers to, for example, the average brightness of a region comprising multiple pixels.

[0200] [Brightness L setting]

[0201] Explain the setting of brightness L performed in step S507.

[0202] Figure 1C The brightness of the light-emitting element EM included in the pixel circuit PX1 shown is determined, for example, based on the potential difference between wiring ANO and wiring CAT and the intensity of the image signal supplied from the signal supply unit SE to the current control unit CU. The image signal can be different in each pixel. Furthermore, the light-emitting element can emit light at a grayscale corresponding to the image signal value.

[0203] On the other hand, both the ANO and CAT wirings are shared by multiple pixel circuits and are supplied with a common potential across all pixel circuits. Therefore, by changing the potential of the ANO or CAT wiring, the overall brightness of the shared pixel circuit changes.

[0204] In applications requiring significant brightness changes, such as altering the potential of the CAT or ANO wiring. For example, when the brightness of the display unit when the user sees the image or text information differs greatly from the brightness when photographing the subject, the potential of the CAT or ANO wiring is changed. Figure 3A As shown, when photographing a subject using the light-receiving element of the display unit outdoors on a sunny day, in step S508, it is preferable to increase the potential difference between the wiring ANO and the wiring CAT by changing the potential of the wiring CAT or wiring ANO relative to the previous process, thereby increasing the brightness. For example, when the illuminance of the light received from the ambient light is illuminance Q or higher, it is preferable to change the potential of the wiring CAT or wiring ANO, such as illuminance Q being 1000 lux or higher and 50000 lux or lower. Furthermore, illuminance Q is, for example, 1000 lux (lx) or higher and 20000 lux or lower, more preferably 1000 lux or higher and 10000 lux or lower, and even more preferably 1000 lux or higher and 5000 lux or lower, for example, around 2000 lux. Lux, as the unit of illuminance, can also be represented by the unit symbol lx. Alternatively, it can be expressed as lm / m 2 .

[0205] On the other hand, such as Figure 3B As shown, under indoor lighting, the potentials of wiring CAT and wiring ANO can remain unchanged in step S508, for example, the same conditions can be used. Alternatively, compared to outdoor conditions on a sunny day, the potential difference between wiring ANO and wiring CAT can be reduced. That is, the voltage fluctuation range of wiring ANO and wiring CAT can be further reduced.

[0206] Similarly, as Figure 2 As shown, in situations where a flash is used during shooting, such as sometimes with... Figure 3A The outdoor lighting conditions shown are lower than ambient light levels on a sunny day. Even under these conditions, the potentials of the wiring CAT and wiring ANO can be maintained when displaying an image used as a flash. Alternatively, the potential difference between wiring ANO and wiring CAT can be reduced compared to an outdoor sunny day. In other words, the voltage fluctuation range of wiring ANO and wiring CAT can be further reduced.

[0207] When fingerprints are captured in a first environment, such as outdoors on a sunny day (hereinafter referred to as imaging condition Im1), the brightness of area 425 of display unit 422 is, for example, higher than the brightness of area 425 of display unit 422 when fingerprints are captured in a second environment, such as under indoor lighting (hereinafter referred to as imaging condition Im2). Furthermore, in a third environment using a flash (hereinafter referred to as imaging condition Im3), the brightness of area 483 is, for example, lower than the brightness under imaging condition Im1.

[0208] The brightness of region 425 under camera condition Im1 is, for example, more than 1.5 times, more than 1.7 times, or more than 2 times the brightness of region 425 under camera condition Im2.

[0209] The brightness of region 425 under camera condition Im1 is, for example, more than 1.5 times, more than 1.7 times, or more than 2 times the brightness of region 483 under camera condition Im3.

[0210] The potential difference between wiring ANO and wiring CAT under camera condition Im1 is, for example, more than 1.05 times, 1.1 times, or 1.2 times the potential difference between wiring ANO and wiring CAT under camera condition Im2 or Im3. Additionally, the potential difference between wiring ANO and wiring CAT under camera condition Im2 is sometimes smaller than that under camera condition Im3.

[0211] The potential of the wiring CAT under imaging condition Im1 is, for example, lower than the potential of the wiring CAT under imaging conditions Im2 and Im3. Furthermore, for example, the potential difference between the wiring CAT under imaging condition Im1 and the wiring CAT under imaging conditions Im2 or Im3 is 0.5 times to 5 times the potential difference between the gate and source of the current control transistor (driving transistor) in the current control unit CU when the pixel emits light under imaging conditions Im2 or Im3. Additionally, the potential of the wiring CAT under imaging condition Im2 is sometimes greater than the potential difference of the wiring CAT under imaging condition Im3.

[0212] Alternatively, the potential of the wiring ANO under imaging condition Im1 may be lower than the potential of the wiring ANO under imaging conditions Im2 and Im3. Furthermore, for example, the potential difference between the wiring ANO under imaging condition Im1 and the wiring ANO under imaging condition Im2 or Im3 may be 0.5 times to 5 times the gate-source potential difference of the current control transistor (driving transistor) in the current control unit CU when the pixel emits light under imaging condition Im2 or Im3. Additionally, the potential of the wiring ANO under imaging condition Im2 may sometimes be less than the potential difference of the wiring ANO under imaging condition Im3.

[0213] Figure 7A The following example is shown: In Figure 4In the illustrated process, compared to the case where steps S502 and S503 are performed for the (x-1)th time, in the x-th time of steps S502 and S503, the potential of the wiring CAT is decreased while the potential difference between the wiring ANO and the wiring CAT is increased. Note that in the x-th time of step S503, in order to improve brightness, the time t, which is the detection period of the light-receiving element 406, is shortened compared to the (x-1)th time of step S503, but... Figure 7A Information corresponding to the detection period of each light-receiving element 406 is omitted.

[0214] in addition, Figure 7B The following example is shown: In Figure 4 In the process shown, compared with the case of performing steps S502 and S503 for the (x-1)th time, when performing steps S502 and S503 for the xth time, the potential of the wiring ANO is increased, thereby increasing the potential difference between the wiring ANO and the wiring CAT.

[0215] Here, when the current control transistor included in the current control unit CU is a p-channel transistor, for example, the potential supplied from the wiring ANO is supplied to the source of the transistor, and the potential corresponding to the image signal supplied from the signal supply unit SE is supplied to the gate of the transistor. When the potential of the source of the transistor is changed, the potential between the gate and source changes, and sometimes the operation of the transistor changes; specifically, the stability of the saturation current flowing through the saturation region of the transistor changes, which is not preferred. Therefore, when the current control transistor is a p-channel transistor, such as... Figure 7A As shown, it is preferable to change the potential of the wiring CAT.

[0216] Furthermore, when the current control transistor included in the current control unit CU is an n-channel transistor, for example, the terminal on the side connected to the light-emitting element EM is connected to the source of the transistor, and the potential corresponding to the image signal supplied from the signal supply unit SE is supplied to the gate of the transistor. When the current control transistor is an n-channel transistor, such as... Figure 7B As shown, it is preferable to change the potential of the wiring ANO.

[0217] Figure 7C Multiple pixel circuits PX1 and PX2 are shown configured in a matrix. In pixel circuit PX1, wiring ANO is supplied with a common signal. Additionally, in both pixel circuits PX1 and PX2, wiring CAT is supplied with a common signal.

[0218] Furthermore, the pixel circuit PX2, which includes the light-receiving element, is also connected to the wiring CAT. Therefore, changing the voltage of the wiring CAT also affects the driving conditions of the pixel circuit PX2 that drives the light-receiving element. In this case, it is preferable to appropriately change the voltage of the signals supplied to each wiring in the pixel circuit PX2 as the wiring CAT changes.

[0219] On the other hand, since the wiring ANO is not connected to the pixel circuit PX2, there is an advantage that when the brightness of the light-emitting element is changed by changing the wiring ANO, the driving conditions of the pixel circuit PX2 do not need to be considered.

[0220] <Example of working methods 2>

[0221] The following example of identification in an electronic device according to one aspect of the present invention is illustrated using the above-described working method example 1.

[0222] Figure 8 A flowchart showing the operation of electronic device 420 is provided.

[0223] In step S100, the processing of this procedure begins.

[0224] Next, in step S101, a camera image of the verification code is obtained. For example, a camera or similar device included in an electronic device can be used to obtain the camera image.

[0225] Next, in step S102, the information of the verification code is obtained from the camera image of the verification code.

[0226] Next, in step S103, processing information based on the verification code is displayed on the display unit. This processing is, for example, performed using electronic device 420. As an example of this processing, a decision using a verification code can be presented.

[0227] Next, in step S104, it is determined whether the processing information displayed in step S103 is approved. If not approved, the process proceeds to step S199 and ends. If approved, the process proceeds to step S105.

[0228] Steps S105 to S108 are used to determine the user information comparison approved in step S104. Here, fingerprint information is used as user information.

[0229] First, in step S105, a camera image of the first finger is acquired. This is done by using the first finger as the subject in the above-described process. Figure 4 The process shown can be completed in step S105 by obtaining a camera image of the first finger.

[0230] Next, in step S106, the fingerprint information of the first finger is obtained using the camera image obtained in step S105.

[0231] Next, in step S107, the first fingerprint information is compared. This comparison can be performed, for example, by comparing it with the second fingerprint information stored in the storage unit of the electronic device.

[0232] Next, in step S108, it is determined whether the comparison performed in step S107 is consistent. If the comparison is consistent, the process proceeds to step S109, where the electronic device performs the approval process obtained in step S104. Otherwise, if the comparison is inconsistent, the process proceeds to step S199 and ends.

[0233] <Example of working methods 3>

[0234] The above was achieved by using an image containing a verification code as the subject. Figure 4 The process shown is as follows: Figure 8 Step S101 can obtain a camera image of the verification code.

[0235] <Example of working methods 4>

[0236] Reference Figure 9A An example illustrating one method of operation of the present invention.

[0237] exist Figure 9A In the first image displayed by the display unit 422, area 425 is displayed Figure 4 The process shown includes images that can be used as camera light sources, area 483 displays images that can be used as flashlights, and area 484 displays still or moving images as images captured by camera 431.

[0238] Zones 425 and 483 can display white or a specified color, respectively. Note that zones 425 and 483 can display the same color or different colors.

[0239] exist Figure 9A In this process, a finger positioned as the subject 460 is placed in a manner that touches or approaches the area 425 to acquire a photographic image, thereby enabling [further action / process]. Figure 4 The process is illustrated. During the acquisition of the camera image, area 483 can be used as a flash and camera 431 can be used to photograph the user. The still or moving image of the user captured by camera 431 can be displayed in area 484.

[0240] Alternatively, facial recognition can be performed by capturing the user's face and comparing it with user information stored in the storage unit of the electronic device 420. Security can be improved by combining facial recognition with fingerprint recognition using the finger of the subject 460.

[0241] Note that, especially when the captured image is a still image, the captured image may not be displayed in area 484 during the recording period of camera 431. Therefore, as Figure 9C As shown, during video recording, area 483, which serves as the flash, is displayed instead of area 484, which displays the video image from camera 431. Figure 9B As shown, after taking the picture, area 483 is not displayed but area 484 is displayed, thereby expanding the area of ​​both area 483 and area 484.

[0242] Furthermore, especially in low ambient light conditions, a flash can be used to photograph the user. For example, the brightness of area 483, which can be used as a flash, can be higher than the brightness of area 425 when photographing fingerprints, etc. For example, the potential of wiring CAT can be lowered. For example, the potential of wiring ANO can be increased. Here, area 425 can refer to the description of the brightness of imaging condition Im2, the driving conditions of the pixel circuit, etc., as explained above, and area 483 can refer to the description of the brightness of imaging condition Im3, the driving conditions of the pixel circuit, etc., as explained above.

[0243] Alternatively, when the ambient light intensity is high, area 425 may sometimes refer to the description of the brightness of the imaging conditions Im1 and the driving conditions of the pixel circuit described above.

[0244] <Example 5 of working methods>

[0245] exist Figure 10A The first image displayed on the display unit 422 shows areas 425 (areas 425a and 425b). Figure 4 The image that can be used as a camera light source in the illustrated process, area 484 displays an image or moving image captured using camera 438. Figure 10B In the middle, frame 421 is in Figure 10A The back side of the surface shown as the top surface is the side of the electronic device 420. The camera 438 is a camera disposed on the back side of the surface in the housing 421 where the display unit 422 is provided.

[0246] Area 484 displays a static or animated image as the camera image for CAPTCHA 485. Additionally, in Figure 10A In the diagram, two regions (region 425a and region 425b) are shown as region 425. Different fingers can be configured on each region. Figure 10A An example is shown in which the user's index finger 460a is positioned on region 425a and the user's middle finger 460b is positioned on region 425b.

[0247] In example 3 of the working method described above, refer to Figure 8The flowchart shown illustrates an example where a camera image containing a verification code is obtained in step S101, followed by a camera image of a finger in step S105. However, in... Figure 10A In the image displayed on the display unit 422, for example, the captured images of both can be obtained in step S101. Therefore, step S105 can sometimes be omitted, thereby improving processing efficiency.

[0248] <Example of working methods 6>

[0249] Figure 11 Examples combining the structures shown in Figure 9 and Figure 10 are illustrated. Figure 11 In the diagram, area 484 shows two areas (area 484a and area 484b). Area 484a displays an image or video captured by camera 438. Area 484b displays a still image or video as an image for verification code 485.

[0250] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0251] (Implementation Method 2)

[0252] In this embodiment, an example of an electronic device according to one aspect of the present invention will be described.

[0253] <Example 2 of Electronic Device Structure>

[0254] Figures 12A to 13D A schematic diagram of electronic device 420 is shown. Figures 12A to 13D It is along Figure 3A The cross-sectional view of the dotted line AB is shown. Additionally, Figures 12A to 13D Areas 425 and 427 are indicated by arrows respectively.

[0255] Electronic device 420 includes a frame 421, a layer 441, and a layer 443. Layer 441 includes a display unit 422. Layer 443 includes a sensor unit 403. Region 427 is the region overlapping with layer 443, and can be detected using the sensor included in sensor unit 403. Figure 3A The example shown includes an illuminance sensor 432. Alternatively, various sensors other than the illuminance sensor can be installed in area 427. Furthermore, a control circuit section 401 and a storage section 404 can be installed in the space 445 inside the housing 421. Note that the control circuit section 401 and the storage section 404 can also be installed in layer 441 or layer 443. Additionally, although not shown, electronic components such as communication antennas and batteries can be installed in space 445.

[0256] Figure 12AAn example is shown where region 425 is provided across the entire surface of display unit 422 and region 427 is provided within a portion of display unit 422. That is, regions 425 and 427 have overlapping areas. Figure 12A In the structure shown, the first identification information can be obtained at any position of the display unit 422.

[0257] Figure 12B An example is shown where a region 425 is provided in a portion of the display unit 422 and a region 427 is provided in a portion of the display unit 422. By providing region 425 in a portion of the display unit 422, and illuminating a portion of the light-emitting element 405, the power consumption of the electronic device 420 can be reduced. Although in Figure 12B Regions 425 and 427 do not overlap, but as Figure 12C As shown, regions 425 and 427 may also have overlapping regions.

[0258] Figure 12D An example is shown where areas 425 and 427 are in the same position. By placing areas 425 and 427 in the same position, the user can obtain the first identification information and the second identification information while keeping a finger touching the display 422, thereby improving the operability of the electronic device 420.

[0259] Figures 12A to 12D The diagram illustrates a structure in which a region 427 is provided in the display section 422, and second identification information is obtained within the display section 422. The layer 443, including the sensor section 403, is preferably fixed to the layer 441, which includes the display section 422. For example, the layer 443 is fixed to the layer 441 by an adhesive layer (not shown). Preferably, no space is included between the layers 443 and 441. By eliminating the space (air) between the layers 443 and 441, when an ultrasonic fingerprint sensor is used in the sensor section 403, the attenuation of ultrasonic waves due to air can be suppressed, and second identification information can be obtained with high sensitivity.

[0260] Figure 13A An example is shown where an area 425 is provided on the entire surface of the display unit 422 and an area 427 is provided on the outside of the display unit 422. For example... Figure 13B As shown, area 425 can also be set in a part of display unit 422. Figure 13A and Figure 13B The diagram shows areas 425 and 427 that do not overlap, and the structure in which the first identification information and the second identification information are obtained on the same surface (display surface) of the electronic device 420 as the display unit 422.

[0261] Note that, although Figure 13A and Figure 13BAn example of exposed layer 443 is shown, but the invention is not limited to this. Layer 443 may also be disposed within frame 421, and when layer 443 is disposed within frame 421, layer 443 is preferably fixed to frame 421. Layer 443 is fixed to frame 421 by an adhesive layer (not shown). Furthermore, it is preferable that no space is included between layer 443 and frame 421. By eliminating space (air) between layer 443 and frame 421, when an ultrasonic fingerprint sensor is used in sensor section 403, attenuation of ultrasonic waves due to air can be suppressed, and second identification information can be obtained with high sensitivity.

[0262] Figure 13C An example is shown where an area 425 is provided on the entire surface of the display unit 422, and an area 427 is provided on the surface of the electronic device 420 opposite to the display unit 422 (the surface opposite to the display surface). For example... Figure 13D As shown, area 425 can also be set in a part of display unit 422. Figure 13C and Figure 13D The diagram shows a structure in which first identification information is obtained on the same side of the electronic device 420 as the display unit 422 (the display side) and second identification information is obtained on the side of the electronic device 420 opposite to the display unit 422 (the side opposite to the display side).

[0263] In Adoption Figure 13C and Figure 13D In the structure shown, space (air) may also be included between layer 443 and layer 441. Note that, although Figure 13C and Figure 13D An example of the structure of exposed layer 443 is shown, but the invention is not limited to this. Layer 443 may also be disposed within frame 421, and when layer 443 is disposed within frame 421, layer 443 is preferably fixed to frame 421. Layer 443 is fixed to frame 421 by an adhesive layer (not shown). Furthermore, it is preferable that no space is included between layer 443 and frame 421.

[0264] The above is an explanation of the structure of electronic devices.

[0265] Note that the identification method, processing method, operation method, working method, or display method executed by the electronic device according to one aspect of the present invention may, for example, be recorded as a program. For instance, a program recording the identification method, processing method, operation method, working method, or display method executed by the electronic device 420, etc., can be stored in a non-temporary storage medium and read and executed by the arithmetic unit, etc., included in the control circuit section 401 of the electronic device 420. That is, executing the program of the identification method and working method, etc., through hardware, and storing the program in a non-temporary storage medium is one aspect of the present invention.

[0266] An electronic device according to one aspect of the present invention may also include one or more of a speaker, a microphone, and a camera. Alternatively, the electronic device may also include one or more of a speaker, a microphone, a camera, and a sensor (the sensor having the function of detecting, identifying, or measuring factors such as force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow rate, humidity, tilt, vibration, odor, or infrared radiation).

[0267] Electronic components such as communication antennas and batteries can be installed inside the frame of electronic devices.

[0268] The display unit may include a touch sensor. Touch sensors can utilize various methods such as capacitive, resistive, surface acoustic wave, infrared, optical, and pressure-sensitive types.

[0269] Figure 14A and Figure 14B The illustrated electronic device 6500 is a portable information terminal that can be used as a smartphone. Figure 14A In the perspective view, the display unit 6502 of the electronic device 6500 is arranged with the display unit 6502 facing upwards. Figure 14B In the perspective view, the surface of the frame 6501 located on the back side of the side where the display section 6502 of the electronic device is installed is arranged with the surface facing upward.

[0270] Electronic device 6500 includes a frame 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a camera 6521, a camera 6522, an illuminance sensor 6523, and a light source 6508. The display unit 6502 has a touch panel function.

[0271] Display unit 6502 may use display unit 422, etc., as described above.

[0272] Display unit 6502, camera 6507, and illuminance sensor 6523 are disposed on the side of the housing 421 where display unit 422 is located. Additionally, camera 6521, camera 6522, and light source 6508 are disposed on its rear side.

[0273] Camera 6507 can be used to photograph the user. Camera 6507 can be referred to as the front-facing camera, and cameras 6521 and 6522 can be referred to as the rear-facing cameras.

[0274] When taking pictures using camera 6507, for example, the light-emitting element of display unit 422 can be used as a flash. Furthermore, when taking pictures using cameras 6521 and 6522, for example, light source 6508 can be used as a flash.

[0275] Electronic device 6500 may include two or more cameras with different focal lengths. Cameras 6521 and 6522 are, for example, cameras with different focal lengths of lenses. One can be used for wider-angle shooting, and the other for telephoto shooting.

[0276] In addition, cameras 6507, 6521 and 6522 can appropriately capture subjects that are farther away from the surface of the display unit than the subject captured by the display unit 422.

[0277] The illuminance sensor 6523 is disposed on the side of the housing 421 where the display unit 422 is located. Therefore, the illuminance corresponding to the ambient light received by the display unit 422 can be detected. Alternatively, the illuminance sensor 6523 can also be disposed on the back side of the display unit 422 in the housing 421. In this case, the ambient light illuminating the display unit 422 passes through the display unit 422 and illuminates the illuminance sensor 6523.

[0278] Figure 14C It is a cross-sectional schematic diagram of one end of the microphone 6506, including the frame 6501.

[0279] A light-transmitting protective component 6510 is provided on one side of the display surface of the frame 6501. The space surrounded by the frame 6501 and the protective component 6510 contains a display panel 6511, an optical component 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc.

[0280] The display panel 6511, optical component 6512, and touch sensor panel 6513 are fixed to the protective component 6510 using an adhesive layer (not shown).

[0281] In the area outside the display unit 6502, a portion of the display panel 6511 is folded, and this folded portion is connected to an FPC 6515. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals disposed on a printed circuit board 6517.

[0282] The display panel 6511 can be used with a display device according to one aspect of the present invention. This allows for the realization of an extremely lightweight electronic device. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be installed while minimizing the thickness of the electronic device. Additionally, by folding a portion of the display panel 6511 to provide a connection to the FPC 6515 on the back of the display section, a narrow-bezel electronic device can be achieved.

[0283] The image can be captured on the display unit 6502. For example, the display panel 6511 can capture and recognize fingerprints.

[0284] The display unit 6502 also includes a touch sensor panel 6513, thereby enabling the addition of touch panel functionality to the display unit 6502. For example, the touch sensor panel 6513 can utilize various methods such as capacitive, resistive, surface acoustic wave, infrared, optical, and pressure-sensitive types. Alternatively, the display panel 6511 can also be used as a touch sensor, in which case the touch sensor panel 6513 is unnecessary.

[0285] <Example 3 of Electronic Device Structure>

[0286] Figure 15A The electronic device 420 shown can be used as a portable information terminal that can be worn on a living organism or object.

[0287] Figure 15A The illustrated electronic device 420 includes a watch strap 435. The watch strap 435 can be worn on a living organism or object. Additionally, Figure 15A The illustrated electronic device 420 includes a fastener 437. The fastener 437 can be used to secure the worn strap 435 to a living organism or object. Figure 15A An example is shown where the electronic device 420 is worn on the user's left wrist 461.

[0288] The frame 421 includes a first surface and a second surface opposite to the first surface. The display unit 422 is preferably disposed on the first surface, and the sensor unit 403 is preferably disposed on the second surface. Figure 17A It is shown Figure 15A A perspective view of the appearance of one side of the first surface (display unit 422) of the electronic device 420 shown. Figure 17B It is shown Figure 15A A perspective view of the appearance of the second side (sensor unit 403) of the electronic device 420 shown. The sensor unit 403 is provided on the second side to detect the insertion / removal state of the electronic device 420.

[0289] Notice, Figure 15A The example shown is a rectangular display unit 422 of the electronic device 420, but there are no particular limitations on the shape of the display unit 422. Having a shape other than a rectangle for the display unit 422 can improve the design flexibility of the electronic device 420. For example... Figure 15B As shown, the display section 422 can also be circular. For example... Figure 16A As shown, the display unit 422 may also have a structure in which its display surface is bent and displays are performed along the bent display surface. Additionally, as... Figure 16B As shown, the shape of the electronic device 420 can also be cylindrical. Figure 16B This illustrates the case where the electronic device 420 is worn on the finger 463.

[0290] Electronic device 420 may also include an operation button 436. A user can operate electronic device 420 by pressing the operation button 436. Electronic device 420 may also include a strap 435 and a buckle 437. The strap 435 and buckle 437 can be used to wear electronic device 420 on a living organism or object. Note that... Figure 15A The diagram shows the structure of the electronic device 420 including the operation button 436, but a structure without the operation button 436 may also be used. Additionally, Figure 17A , Figure 17B The diagram shows the electronic device 420 including the fastener 437, but a structure without the fastener 437 is also possible. Alternatively, a structure may be used where the electronic device 420 is worn on a living organism or object using only the strap 435. Furthermore, a structure may be used where the electronic device 420 does not include the strap 435.

[0291] Electronic device 420 can, for example, make hands-free calls by communicating with a headset capable of wireless communication. Additionally, electronic device 420 can transmit data to other information terminals or be charged via a connection terminal (not shown). Charging can also be performed wirelessly.

[0292] Figure 18A and Figure 18B It is along Figure 15A The cross-sectional view of the dotted line AB shown. Figure 18C It is along Figure 15A The cross-sectional view of the dashed line EF is shown. Figure 18D It is along Figure 16A The cross-sectional view of the dotted line CD shown. Figures 18B to 18D A magnified view shows the frame 421, the display unit 422, and the sensor unit 403. Additionally, in... Figures 18A to 18D Operation button 436 and fastener 437 are omitted.

[0293] The sensor unit 403 can obtain information (first information) about the penetration / disconnection status of the electronic device 420 when a portion of the emitted light is reflected by a living organism or object and the reflected light is incident on it. Figure 18B In the image, arrows indicate the light emitted from the display unit 422 and the light emitted from the sensor unit 403. (Example:) Figure 18B As shown, preferably, the direction of the light emitted from the display unit 422 is opposite to the direction of the light emitted from the sensor unit 403. Note that... Figure 18A An example of wearing the electronic device 420 with the sensor unit 403 located on the back of the hand is shown, but the wearing method is not limited to this. It can also be worn with the sensor unit 403 located on the palm side.

[0294] like Figure 18DAs shown, the display unit 422 may also have a structure in which its display surface is bent and displays along the bent display surface.

[0295] <Example 7 of working methods>

[0296] In the case of using a portable information terminal that can be worn on a biological or object as an electronic device 420, refer to Figure 4 and Figure 8 The example shown illustrates how identification is performed by comparing a CAPTCHA with user information.

[0297] [Shooting the verification code]

[0298] First, let me explain how to use it. Figure 4 The method shown is for obtaining a camera image containing a verification code. Note that the following description of the above-described embodiments may be appropriately referenced.

[0299] First, in step S500, the processing of this procedure begins.

[0300] Next, in step S501, the subject 460 is detected.

[0301] In this step, the subject 460 is an image containing the verification code. As an example, Figure 19A The image shows a piece of paper printed with a verification code. The verification code can also be affixed to objects such as goods, spare parts, and structures such as pillars and walls. Alternatively, the subject 460 can be displayed on an electronic device. For example, the image of the verification code can be displayed on the display of an electronic device.

[0302] As a detection step, for example, the sensor unit can detect the approach of the subject 460 after the user brings the display unit 422 of the electronic device 420 close to the subject 460. At this time, by displaying a prompt to start capturing the subject 460 on the display unit 422 of the electronic device 420, the user can bring the display unit 422 close to the subject 460 according to the prompt. Alternatively, as described later, sometimes capturing is performed by scanning the display unit 422. In this case, a prompt to start scanning can be displayed. Furthermore, when displaying such a prompt, for example, the user can proceed to the next step without detecting the approach of the subject 460 after a certain period of time following the display of the prompt.

[0303] Next, in step S502, the number of processing times x is set to 1, the brightness L is set to L(1), and the time t is set to t(1).

[0304] Next, in step S503, the first image is displayed on the display unit at a brightness L.

[0305] Next, in step S504, the first image is used as a light source to capture the subject. Here, when the image of the verification code is larger than the display unit 422 of the electronic device 420, the entire image of the verification code can be captured by scanning the display unit 422. Figure 19B and Figure 19C This shows a case where the display unit 422 scans in the direction of the arrow as it approaches the subject 460. Figure 19C In this device, the electronic device 420 is worn on the user's left wrist 461, with the user's palm facing forward and the frame 421 of the electronic device 420 worn on the back, i.e., the back of the user's hand. When the user moves their left wrist 461, the display unit 422 can scan to capture an image of the verification code as the subject.

[0306] In addition, in step S504, the electronic device uses the signal detected by the light-receiving element to acquire a photographic image of the subject.

[0307] Next, in step S505, it is determined whether to use the camera image obtained in step S504. Specifically, for example, it is determined whether the image quality of the camera image is sufficient to obtain the subject information. If the image quality is sufficient, the image is used; if the image quality is insufficient, the image is not used.

[0308] When using a camera image, proceed to step S509; when not using a camera image, proceed to step S506.

[0309] In step 506, the number of processing steps x is incremented.

[0310] In step S507, it is determined whether the number of processing steps x is less than n. When the number of processing steps reaches n, proceed to step S511 to end the processing.

[0311] In step S508, the brightness L is set to L(x), and the time t is set to t(x).

[0312] After step S508, return to step S503 and repeat steps S503 to S505. If the camera image is not used in step S505, proceed to step S506; if the camera image is used in step S505, proceed to step S509.

[0313] In step S509, the captured image is obtained. In step S510, the process ends.

[0314] [Filming with fingers]

[0315] Next, instructions on using Figure 4 The method shown is a method for acquiring a camera image of a user's finger. Note that the following description of the above-described embodiments may be appropriately referenced.

[0316] First, in step S500, the processing of this procedure begins.

[0317] Next, in step S501, the subject 460 is detected.

[0318] In this step, the subject 460 is the user's finger. Figure 20A An example is shown where the user's right index finger touches the display 422 of an electronic device 420 worn on the user's left wrist 461.

[0319] As a detection method for this step, for example, the sensor unit can detect the approach of the subject 460 after the user brings the display unit 422 of the electronic device 420 close to the subject 460. Alternatively, a prompt to start capturing the subject 460 can be displayed on the display unit 422 of the electronic device 420, allowing the user to touch or approach the display unit 422 based on this prompt. When displaying this prompt, for example, the user can proceed to the next step without detecting the approach of the subject 460 after a certain period of time following the display of the prompt.

[0320] Next, in step S502, the number of processing times x is set to 1, the brightness L is set to L(1), and the time t is set to t(1).

[0321] Next, in step S503, the first image is displayed on the display unit at a brightness L.

[0322] Next, in step S504, the first image is used as a light source to capture the subject. Additionally, in step S504, the electronic device uses the signal detected by the light-receiving element to acquire a captured image of the subject.

[0323] Next, in step S505, it is determined whether to use the camera image obtained in step S504. Specifically, for example, it is determined whether the image quality of the camera image is sufficient to obtain the subject information. If the image quality is sufficient, the image is used; if the image quality is insufficient, the image is not used.

[0324] When using a camera image, proceed to step S509; when not using a camera image, proceed to step S506.

[0325] In step 506, the number of processing steps x is incremented.

[0326] In step S507, it is determined whether the number of processing steps x is less than n. When the number of processing steps reaches n, proceed to step S511 to end the processing.

[0327] In step S508, the brightness L is set to L(x), and the time t is set to t(x).

[0328] After step S508, return to step S503 and repeat steps S503 to S505. If the camera image is not used in step S505, proceed to step S506; if the camera image is used in step S505, proceed to step S509.

[0329] In step S509, the captured image is obtained. In step S510, the process ends.

[0330] [Identification]

[0331] Next, a portable information terminal that can be worn on a biological or object as an electronic device is shown, and according to... Figure 8 The illustrated process is an example of how identification is performed. Note that the following description of the above-described implementation method may be appropriately referenced.

[0332] First, in step S100, the processing of this procedure begins.

[0333] Next, in step S101, a camera image of the verification code is obtained. Here, the method described above is used to obtain the camera image of the verification code.

[0334] By using a portable information terminal that can be worn on a biological or object as an electronic device, the user can simply move the part of the device being worn, for example... Figure 19C The verification code can be scanned simply by tapping the wrist. Therefore, it minimizes disruption to the user's work. Furthermore, since there's no need to carry the electronic device in a bag or pocket, or retrieve it from one, work convenience is improved. By minimizing disruption and increasing convenience, work security and efficiency can be enhanced.

[0335] Next, in step S102, the information of the verification code is obtained from the camera image of the verification code.

[0336] Next, in step S103, the processing information based on the verification code is displayed on the display unit.

[0337] Next, in step S104, it is determined whether the processing information displayed in step S103 is approved. If not approved, the process proceeds to step S199 and ends. If approved, the process proceeds to step S105.

[0338] Next, in step S105, a camera image of the first finger is acquired. Here, the camera image of the first finger is acquired using the method described above.

[0339] By using portable information terminals that can be worn on biological or physical objects as electronic devices, users no longer need to carry electronic devices in bags or pockets, nor do they need to take them out of bags or pockets, thus improving work convenience. Furthermore, it minimizes disruption to the user's work. By minimizing disruption and increasing convenience, work safety and efficiency can be improved.

[0340] Next, in step S106, the fingerprint information of the first finger is obtained using the camera image obtained in step S105.

[0341] Next, in step S107, the first fingerprint information is compared. This comparison can be performed, for example, by comparing it with the second fingerprint information stored in the storage unit of the electronic device.

[0342] Next, in step S108, it is determined whether the comparison performed in step S107 is consistent. If the comparison is consistent, the process proceeds to step S109, where the electronic device performs the approval process obtained in step S104. Otherwise, if the comparison is inconsistent, the process proceeds to step S199 and ends.

[0343] Furthermore, a sensor is installed in the sensor unit to detect the wearing and removal of the electronic device 420. Identification is performed when the electronic device 420 is removed from the user's wearing area and then put back on, thereby associating the electronic device 420 with the user. The operations performed on the electronic device 420 are those pre-approved by the terminal through association with the user. This can also be described as a two-stage identification process: the association between the user and the electronic device 420 when worn serves as the first stage of identification; the consistency of the fingerprint information in step 107 serves as the second stage of identification. By employing two-stage identification, extremely high security can be achieved.

[0344] As a method of identification when wearing electronic devices 420, the following identification methods can be appropriately used: fingerprint recognition, password recognition including password recognition, voiceprint recognition, etc.

[0345] [Illumination sensor]

[0346] Figure 20B It is along Figure 15A The cross-sectional view shown by the dotted line AB illustrates an example of an illumination sensor 434 installed within the frame 421. Figure 20B The illuminance sensor 434 shown is arranged to overlap with the back of the display unit 422. Ambient light illuminating the display unit 422 passes through the display unit 422 and enters the illuminance sensor 434.

[0347] In addition, Figure 20CIn the example shown, the illuminance sensor 434 is configured to be adjacent to the display unit 422 on the surface of the frame 421.

[0348] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0349] (Implementation Method 3)

[0350] In this embodiment, an example of a display device including a light-receiving element according to one aspect of the present invention will be described. This display device can be applied to an electronic device according to one aspect of the present invention.

[0351] In the display device of this embodiment, a pixel may include multiple sub-pixels having light-emitting elements that emit different colors from each other. For example, a pixel may include three types of sub-pixels. Examples of these three types of sub-pixels include sub-pixels of red (R), green (G), and blue (B), and sub-pixels of yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel may include four types of sub-pixels. Examples of these four types of sub-pixels include sub-pixels of R, G, B, and white (W), and sub-pixels of R, G, B, and Y.

[0352] There are no particular restrictions on the arrangement of subpixels; various arrangement methods can be used. Examples of subpixel arrangements include stripe arrangement, S-stripe arrangement, matrix arrangement, Delta arrangement, Bayer arrangement, Pentile arrangement, etc.

[0353] Furthermore, examples of the top surface shape of a sub-pixel include triangles, quadrilaterals (including rectangles and squares), pentagons, polygons with curved corners, ellipses, and circles. Here, the top surface shape of the sub-pixel corresponds to the top surface shape of the light-emitting area of ​​the light-emitting element.

[0354] In a display device where pixels include light-emitting elements and light-receiving elements, the pixels have a light-receiving function, so the display device can detect the contact or proximity of an object while displaying an image. For example, not only can all sub-pixels included in the display device display images, but some sub-pixels can also emit light as a light source, while other sub-pixels perform light detection and the remaining sub-pixels display images.

[0355] Figure 21A , Figure 21B , Figure 21C , Figure 21G , Figure 21H and Figure 21I The pixels shown include sub-pixels G, B, R, and PS.

[0356] Figure 21AThe pixels shown are arranged in a bar pattern. Figure 21B The pixels shown are arranged in a matrix.

[0357] Figure 21C The pixel arrangement shown has a structure in which three sub-pixels (sub-pixel R, sub-pixel G, and sub-pixel S) are arranged vertically next to a sub-pixel (sub-pixel B).

[0358] Figure 21G The pixel arrangement shown illustrates an example of subpixels arranged in two rows. The upper row (first row) has three subpixels arranged horizontally side by side (subpixel G, subpixel B, and subpixel R), while the lower row has one subpixel (subpixel PS).

[0359] Figure 21H This example shows subpixels arranged in three rows. A subpixel (subpixel B) is set across the first and second rows, with a subpixel (subpixel G) set in the first row to its left, a subpixel (subpixel R) set in the second row, and a subpixel (subpixel PS) set in the third row.

[0360] exist Figure 21I In the structure shown, two pixels with different structures (hereinafter referred to as pixel 30c and pixel 30d) are arranged side by side.

[0361] Figure 21I The pixel 30c shown includes subpixel PS in the upper row (first row), subpixel G in the lower row (second row), and subpixel R across the first row to the second row. In other words, pixel 30c includes subpixels PS and G in the left column (first column) and subpixel R in the right column (second column).

[0362] Figure 21I The pixel 30d shown includes subpixel PS in the upper row (first row), subpixel G in the lower row (second row), and subpixel B across the first row to the second row. In other words, pixel 30d includes subpixels PS and G in the left column (first column) and subpixel B in the right column (second column).

[0363] exist Figure 21I In the structure shown, a sub-pixel R and a sub-pixel B are respectively disposed in two pixels, and the areas of sub-pixels R and B are larger than the area of ​​sub-pixel G. By adopting this structure, the sharpness of sub-pixels G and PS can be improved while the areas of sub-pixels R and B can be increased. This allows for increased brightness even with lower power consumption, thereby enabling a high-definition, low-power, and highly reliable display device.

[0364] Note that the light-receiving area of ​​a sub-pixel (PS) can be smaller than the light-emitting area of ​​other sub-pixels. A smaller light-receiving area results in a narrower imaging range, which can suppress blur and improve resolution. Therefore, by using sub-pixels (PS), high-definition or high-resolution photography can be achieved.

[0365] Figure 21D , Figure 21E and Figure 21F The pixels shown include sub-pixels G, B, R, IRS, and PS.

[0366] Figure 21D , Figure 21E and Figure 21F This example shows a pixel set in two rows. The top row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R), and the bottom row (second row) has two subpixels (one subpixel PS and one subpixel IRS).

[0367] exist Figure 21D In the middle, three vertically elongated sub-pixels G, B, and R are arranged horizontally, and below them, sub-pixels PS and horizontally elongated sub-pixels IRS are arranged horizontally. Figure 21E In the image, two horizontally elongated sub-pixels G and R are arranged vertically, next to which is a vertically elongated sub-pixel B. Below them, horizontally elongated sub-pixels IRS and vertically elongated sub-pixels PS are arranged horizontally. Figure 21F In the middle, three vertically elongated sub-pixels R, G, and B are arranged horizontally, and below them are horizontally elongated sub-pixels IRS and vertically elongated sub-pixels PS. Figure 21E and Figure 21F The diagram shows the case where the area of ​​sub-pixel IRS is the largest, while the area of ​​sub-pixel PS is the same as that of sub-pixel PS.

[0368] Note that the layout of subpixels is not limited to... Figures 21A to 21I The aforementioned structure.

[0369] Sub-pixel R includes a light-emitting element that emits red light. Sub-pixel G includes a light-emitting element that emits green light. Sub-pixel B includes a light-emitting element that emits blue light. Sub-pixel IRS includes a light-emitting element that emits infrared light. Sub-pixel PS includes a light-receiving element. While there is no particular limitation on the wavelength of light detected by sub-pixel PS, the light-receiving element included in sub-pixel PS preferably has sensitivity to the light emitted by the light-emitting elements in sub-pixels R, G, B, or IRS. For example, it is preferable to detect one or more of the wavelength regions of blue, violet, blue-violet, green, yellow-green, yellow, orange, red, and infrared.

[0370] Subpixels (PS) have a smaller light-receiving area than other subpixels. A smaller light-receiving area results in a narrower imaging range, which can suppress blur and improve resolution. Therefore, by using subpixels (PS), high-definition or high-resolution images can be captured. For example, subpixels (PS) can be used for personal identification using fingerprints, palm prints, irises, vein shapes (including vein and artery shapes), or faces.

[0371] Furthermore, subpixels (PS) can be used in touch sensors (also known as direct touch sensors) or near-touch sensors (also known as hover sensors, hover touch sensors, non-contact sensors, or contactless sensors). For example, subpixels preferably detect infrared light. This allows for touch detection even in dark environments.

[0372] Here, a touch sensor or near-touch sensor can detect the approach or contact of an object (finger, hand, pen, etc.). A touch sensor can detect an object through direct contact between the display device and the object. Alternatively, a near-touch sensor can detect an object even if it is not in contact with the display device. For example, preferably, the display device can detect the object within a distance of 0.1 mm to 300 mm, more preferably 3 mm to 50 mm, between the display device and the object. By employing this structure, operation can be performed without the object directly touching the display device; in other words, the display device can be operated in a non-contact (contactless) manner. By employing this structure, the risk of the display device becoming dirty or damaged can be reduced, or the display device can be operated without the object directly contacting stains (e.g., garbage or viruses) adhering to it.

[0373] Because high-resolution imaging is required, subpixels PS are preferably placed among all the pixels included in the display device. On the other hand, when using subpixels PS for touch sensors or near-touch sensors, high precision is not required compared to fingerprint imaging, so they can be placed among only a portion of the pixels included in the display device. By reducing the number of subpixels PS included in the display device to the number of subpixels R, the detection speed can be improved.

[0374] Figure 22A An example of a pixel circuit corresponding to a sub-pixel including a light-receiving element is shown. Figure 22B An example of a pixel circuit corresponding to a sub-pixel that includes a light-emitting element is shown.

[0375] Figure 22A The pixel circuit PIX2 shown includes a light-receiving element PD, transistors M11, M12, M13, and M14, and a capacitor C2. Here, an example using a photodiode as the light-receiving element PD is shown.

[0376] The anode of the light-receiving element PD is electrically connected to wiring V1, and the cathode is electrically connected to one of the source and drain of transistor M11. The gate of transistor M11 is electrically connected to wiring TX, and the other of its source and drain is electrically connected to one electrode of capacitor C2, one of the source and drain of transistor M12, and the gate of transistor M13. The gate of transistor M12 is electrically connected to wiring RES, and the other of its source and drain is electrically connected to wiring V2. One of the source and drain of transistor M13 is electrically connected to wiring V3, and the other of its source and drain is electrically connected to one of the source and drain of transistor M14. The gate of transistor M14 is electrically connected to wiring SEN, and the other of its source and drain is electrically connected to wiring WX.

[0377] Wiring V1 can be the cathode wiring described in the above embodiments.

[0378] Wiring V1, wiring V2, and wiring V3 are each supplied with a constant potential. When the photodetector PD is driven with a reverse bias, a potential higher than that of wiring V1 is supplied to wiring V2. Transistor M12 is controlled by a signal supplied to wiring RES, causing the potential of the node connected to the gate of transistor M13 to be reset to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX, controlling the timing of the potential changes of the node according to the current flowing through the photodetector PD. Transistor M13 is used as an amplifying transistor to output based on the potential of the node. Transistor M14 is controlled by a signal supplied to wiring SEN and is used as a selection transistor, which is used to read out the output based on the potential of the node using external circuitry connected to wiring WX.

[0379] Figure 22B The pixel circuit PIX1 shown includes a light-emitting element EL, transistors M15, M16, and M17, and a capacitor C3. Here, an example using a light-emitting diode (LED) as the light-emitting element EL is shown. In particular, an organic LED is preferably used as the light-emitting element EL.

[0380] exist Figure 22B In this configuration, transistor M16 can be used as the current control unit CU.

[0381] The gate of transistor M15 is electrically connected to wiring GL, one of its source and drain is electrically connected to wiring SL, and the other of its source and drain is electrically connected to one electrode of capacitor C3 and the gate of transistor M16. One of the source and drain of transistor M16 is electrically connected to wiring V4, and the other of its source and drain is electrically connected to the anode of light-emitting element EL and one of the source and drain of transistor M17. The gate of transistor M17 is electrically connected to wiring MS, and the other of its source and drain is electrically connected to wiring OUT2. The cathode of light-emitting element EL is electrically connected to wiring V5.

[0382] Wiring V4 and wiring V5 can be the anode wiring and cathode wiring described in the above embodiments, respectively.

[0383] Wiring V4 and wiring V5 are each supplied with a constant potential. The anode and cathode sides of the light-emitting element EL can be set to a high potential and a lower potential than the anode side, respectively. Transistor M15, controlled by a signal supplied to wiring GL, is used as a selection transistor to control the selection state of the pixel circuit PIX1. Furthermore, transistor M16 is used as a drive transistor to control the current flowing through the light-emitting element EL based on the potential supplied to its gate. When transistor M15 is in the on state, the potential supplied to wiring SL is supplied to the gate of transistor M16, and the brightness of the light-emitting element EL can be controlled according to this potential. Transistor M17, controlled by a signal supplied to wiring MS, outputs the potential between transistor M16 and the light-emitting element EL to the outside through wiring OUT2.

[0384] Here, transistors M11, M12, M13 and M14 included in pixel circuit PIX2, and transistors M15, M16 and M17 included in pixel circuit PIX1 are preferably transistors whose semiconductor layer forming their channels comprises metal oxide (oxide semiconductor).

[0385] Transistors using metal oxides, which have a wider bandgap than silicon and a lower carrier concentration, can achieve extremely low off-state currents. Therefore, because of their small off-state currents, the charge stored in the capacitor element connected in series with the transistor can be maintained for a long period. Thus, in particular, transistors M11, M12, and M15, connected in series with capacitor element C2 or capacitor element C3, are preferably transistors containing oxide semiconductors. Furthermore, by using transistors with the same oxide semiconductors in other transistors, manufacturing costs can be reduced.

[0386] Furthermore, transistors M11 to M17 can also be transistors whose channels are formed by silicon semiconductors. In particular, high field-effect mobility and higher operating speeds can be achieved when using highly crystalline silicon such as monocrystalline or polycrystalline silicon, making it a preferred choice.

[0387] Furthermore, one or more of transistors M11 to M17 may be transistors containing oxide semiconductors, while the other transistors may be transistors containing silicon.

[0388] exist Figure 22A and Figure 22B In this context, n-channel transistors are used as transistors, but p-channel transistors can also be used.

[0389] The transistors included in pixel circuit PIX2 and the transistors included in pixel circuit PIX1 are preferably formed side-by-side on the same substrate. Particularly preferred is that the transistors included in pixel circuit PIX2 and the transistors included in pixel circuit PIX1 are mixed and formed in one region and arranged periodically.

[0390] Furthermore, it is preferable to place one or more layers, including one or both of transistors and capacitors, at a position overlapping with the light-receiving element PD or the light-emitting element EL. This reduces the effective area occupied by each pixel circuit, thereby enabling a high-definition light-receiving or display section.

[0391] Figure 23A A block diagram of a display device 100 is shown. The display device 100 includes a display unit 11, a driving circuit unit 12, a driving circuit unit 13, a driving circuit unit 14, and a circuit unit 15, etc.

[0392] The display unit 11 includes a plurality of pixels 30 arranged in a matrix. Each pixel 30 includes a pixel circuit 21R, a pixel circuit 21G, a pixel circuit 21B, and a pixel circuit 22. Each of the pixel circuits 21R, 21G, and 21B includes a light-emitting element that serves as a display element. The pixel circuit 22 includes a light-receiving element that serves as a photoelectric conversion element.

[0393] Pixel 30 is electrically connected to wiring GL, wiring SLR, wiring SLG, wiring SLB, wiring TX, wiring SEN, wiring RES, and wiring WX. Wiring SLR, wiring SLG, and wiring SLB are electrically connected to drive circuit section 12. Wiring GL is electrically connected to drive circuit section 13. Drive circuit section 12 is used as a source line drive circuit (also called a source driver). Drive circuit section 13 is used as a gate line drive circuit (also called a gate driver).

[0394] Pixel 30 includes pixel circuits 21R, 21G, and 21B. For example, pixel circuit 21R can be used to display a red sub-pixel or a portion of a sub-pixel, pixel circuit 21G can be used to display a green sub-pixel or a portion of a sub-pixel, and pixel circuit 21B can be used to display a blue sub-pixel or a portion of a sub-pixel. Thus, the display device 100 is capable of full-color display. Note that although an example of pixel 30 including three-color sub-pixels is shown here, it may also include sub-pixels of four or more colors.

[0395] Pixel circuit 21R includes a light-emitting element that emits red light. Pixel circuit 21G includes a light-emitting element that emits green light. Pixel circuit 21B includes a light-emitting element that emits blue light. Furthermore, pixel 30 may also include sub-pixels with light-emitting elements that emit other colors of light. For example, in addition to the three sub-pixels mentioned above, pixel 30 may also include sub-pixels with light-emitting elements that emit white light or sub-pixels with light-emitting elements that emit yellow light, etc.

[0396] Wiring GL is electrically connected to pixel circuits 21R, 21G, and 21B arranged in the row direction (the extension direction of wiring GL). Wiring SLR, wiring SLG, and wiring SLB are electrically connected to pixel circuits 21R, 21G, or 21B (not shown) arranged in the column direction (the extension direction of wiring SLR, etc.).

[0397] The pixel circuit 22 included in pixel 30 is electrically connected to wiring TX, wiring SEN, wiring RES and wiring WX. Wiring TX, wiring SEN and wiring RES are each electrically connected to the drive circuit section 14, and wiring WX is electrically connected to the circuit section 15.

[0398] The driving circuit unit 14 has the function of generating signals to drive the pixel circuit 22 and outputting them to the pixel circuit 22 via wiring SEN, wiring TX, and wiring RES. The circuit unit 15 has the function of receiving the signals output from the pixel circuit 22 via wiring WX and outputting them as image data to the outside. The circuit unit 15 is used as a readout circuit.

[0399] The pixel circuit PIX1 described above can be applied to pixel circuits 21R, 21G, and 21B.

[0400] The pixel circuit PIX2 can be applied to the pixel circuit 22.

[0401] [Example of pixel circuit driving methods]

[0402] Figure 22C This is an explanation Figure 22AThe following is a timing diagram of an example of the driving method for the sub-pixel PIX2 of the illustrated structure. Here, a reverse bias voltage can be applied to the photosensitive element PD by setting the potential of wiring V2 to be lower than the potential of wiring V1. When the potential of wiring V1 is the potential of wiring V5 of the pixel circuit PIX1, for example, the potential of the cathode wiring, the value of wiring V2 is a potential lower than the potential of the cathode wiring. Note that in Figure 22B In this diagram, "H" represents a high potential and "L" represents a low potential. This is also consistent across other timing diagrams. Figure 22B In the diagram, the driving period for sub-pixel PIX2 is shown from period T1 to period T5.

[0403] During period T1, the potentials of wirings TX and RES are high, and the potential of wiring SEN is low. Therefore, transistors M11 and M12 are turned on, and transistor M14 is turned off. With transistor M12 turned on, the potential of node FD becomes the potential of wiring V2, i.e., low. Additionally, transistor M11, besides M12, is also turned on, although... Figure 22A Although not shown, the potential of one electrode of the photosensitive element PD is also supplied to the potential of wiring V2. As a result, the charge stored in capacitor C2 is reset. Therefore, it can be said that period T1 is the reset period, and the work performed during period T1 is the reset operation.

[0404] During period T2, the potentials of wiring TX and wiring RES are low. Consequently, transistors M11 and M12 are turned off. When light shines on the photodetector PD in this state, the charge corresponding to the energy incident on the photodetector PD by the light is stored in the photodetector PD. Therefore, period T2 can be considered the exposure period, and the work performed during period T2 is the exposure operation.

[0405] The exposure period T2 is, for example, the detection period of the light-receiving element described in the above embodiment. Note that when using a light-emitting element included in the display device for exposure, the light-emitting element is preferably lit at least during period T2.

[0406] During period T3, the potential of wiring TX becomes high. Consequently, transistor M11 turns on, and the charge stored in the light-receiving element PD is transferred to node FD. Therefore, the potential of node FD rises. Thus, period T3 can be considered the transfer period, and the work performed during period T3 is the transfer operation.

[0407] During period T4, the potential of wiring TX is low. As a result, transistor M11 becomes off, ending the transfer of stored charge to node FD.

[0408] Thus, the pixel circuit PIX2 acquires the camera data. Specifically, the potential of node FD changes to the potential corresponding to the camera data. Therefore, it can be said that period T1 to period T4 is the acquisition period, and the work performed during period T1 to period T4 is the acquisition work.

[0409] Next, an example of the driving method during period T5 will be explained. During period T5, the potential of wiring SEN is high. Therefore, transistor M14 is turned on, indicating that the signal of the image data acquired by the pixel circuit PIX2 is output to wiring WX. Specifically, the potential of wiring WX becomes the potential corresponding to the potential of node FD. Thus, the image data acquired by the pixel circuit PIX2 is read out.

[0410] Therefore, by supplying a high-potential signal to the wiring SEN, the image data acquired by the pixel circuit PIX2 is read out. In other words, the pixel circuit PIX2, which reads out the image data, can be selected by the signal supplied to the wiring SEN. Thus, the signal supplied to the wiring SEN can be considered a selection signal.

[0411] Furthermore, after the camera data is read out, the potential of wiring RES is high. Therefore, transistor M12 becomes active, and the camera data acquired by pixel circuit PIX2 is reset. Specifically, the potential of node FD becomes the potential of wiring V2, i.e., low. Here, since transistor M14 is active, the potential of wiring WX also changes according to the potential change of node FD. Correlated double sampling can also be performed in the readout circuit section electrically connected to wiring WX. By performing correlated double sampling, the noise contained in the readout camera data can be reduced.

[0412] Therefore, by supplying a high-potential signal to the wiring RES, the image data acquired by the pixel circuit PIX2 is reset. Thus, the signal supplied to the wiring RES can be considered a reset signal.

[0413] Next, by setting the potential of wiring RES to a low potential, transistor M12 is turned off, and by setting the potential of wiring SEN to a low potential, transistor M14 is turned off.

[0414] The above is an example of the driving method during period T5. During period T5, the camera data acquired by the pixel circuit PIX2 is read out. Therefore, period T5 can be described as the readout period, and the work performed during period T5 is the readout operation.

[0415] In the pixel circuit PIX2, it is preferable to acquire image data using a global shutter method. Here, global shutter method refers to a method in which image data is acquired simultaneously by all pixels. By acquiring image data using a global shutter method, the synchronization of shooting can be ensured, thus making it easy to obtain images with minimal distortion even when the subject is moving at high speed.

[0416] On the other hand, in the pixel circuit PIX2, for example, image data is read out line by line. Therefore, when image data is acquired using a global shutter method, the pixel circuit PIX2 experiences a longer period from acquisition to readout of the image data. Therefore, when image data is acquired using a global shutter method, it is preferable to maintain the charge transferred from the pixel circuit PIX2 to the node FD for a longer period of time.

[0417] To maintain charge in node FD for an extended period, it is preferable to use transistors with low off-state currents that are electrically connected to node FD. OS transistors are suitable as transistors with low off-state currents. Transistors M11 and M12 are preferably OS transistors.

[0418] When the off-state currents of transistors M11 and M12 are low, the OS transistor may not be used. For example, transistors containing semiconductors with large band gaps can also be used. Semiconductors with large band gaps sometimes refer to semiconductors with a band gap of 2.2 eV or higher. Examples include silicon carbide, gallium nitride, and diamond.

[0419] Note that transistors M11 and M12 can also be, for example, transistors with silicon contained in the channel formation region (hereinafter referred to as Si transistors). The off-state current of Si transistors is higher than that of OS transistors. However, by increasing the capacitance of capacitor C2, even though the off-state currents of transistors M11 and M12 are high, image data can be acquired in the pixel circuit PIX2 using a global shutter mode. Alternatively, image data can also be acquired in the pixel circuit PIX2 using a rolling shutter mode. In this case, even if transistors M11 and M12 are transistors with large off-state currents, the capacitance of capacitor C2 does not need to be increased.

[0420] Furthermore, transistors M13 and M14 can be either Si transistors or OS transistors. For example, by using transistors containing crystalline silicon (typically low-temperature polycrystalline silicon, also known as LTPS, monocrystalline silicon, etc.) as transistors M13 and M14, the on-state current of transistors M13 and M14 can be increased. Therefore, image data can be read out at high speed. On the other hand, when transistors M11 to M14 are all OS transistors, all transistors included in the pixel circuit PIX2 can be formed in the same layer. Furthermore, when transistors M11 to M14 and all other transistors included in the display device are OS transistors, all transistors included in the display device can be formed in the same layer. This simplifies the manufacturing process of the display device. Note that transistors M11 to M14 can also be transistors containing amorphous silicon in the channel formation region. Si transistors (typically LTPS transistors) and OS transistors can also be used in combination as transistors M11 to M14. Note that the structure combining LTPS transistors and OS transistors is sometimes called LTPO. For example, by using OS transistors as transistors that are used as switches to control the conduction / non-conduction between wirings, and by using LTPS transistors as transistors to control current, a display device with high display quality can be obtained.

[0421] When performing fingerprint recognition using a display device according to one aspect of the present invention, firstly, the row driving circuit selects pixels in a designated row of the display unit and reads first image data. This, for example, detects the position of a finger touching or approaching the display unit. Next, the row driving circuit selects only pixels in the row that the finger touches or approaches, as well as pixels in the rows surrounding that row, and reads second image data, i.e., reads the user's fingerprint. Thus, a display device according to one aspect of the present invention performs fingerprint recognition.

[0422] Here, when reading the first camera data, only the position of the finger needs to be detected, and it is not necessary to read the fingerprint image. Therefore, when reading the first camera data, it is not necessary to read the first camera data targeting all rows and columns of pixels in the display unit. For example, the first camera data can be read targeting a limited number of pixels every few rows and columns. As a result, the reading time for a single row of pixels can be shortened compared to the case where the first camera data is read targeting all pixels in the display unit. On the other hand, when reading the second camera data, it is necessary to read the fingerprint image targeting all pixels in a specified area, so the reading time for a single row of pixels is longer compared to the case where the first camera data is read. In a display device according to one aspect of the present invention, the second camera data can be read from only a portion of the pixels provided in the display unit for fingerprint recognition. Therefore, fingerprint recognition can be performed in a shorter time compared to the case where the second camera data is read from all pixels.

[0423] In addition, when the pixel circuit includes a light-receiving element that has both light-receiving and light-emitting functions, the pixel circuit may have a circuit area for light-receiving and a circuit area for light-emitting. Figure 23B An example of a pixel circuit including a light-emitting element SR is shown. When the light-emitting element SR is exposed, transistors M16 and M17 are turned off. By turning off transistor M16, the electrical connection between the wiring V4, used as the anode wiring, and the light-emitting element SR is interrupted. Furthermore, when the light-emitting element SR emits light, a low potential can be supplied, for example, from the wiring TX to the gate of transistor M11.

[0424] Figure 24A , Figure 24B , Figure 24C , Figure 25A and Figure 25B An example of a pixel circuit that can be used as pixel circuit 21R, pixel circuit G, and pixel circuit B is shown.

[0425] exist Figure 24A In the pixel circuit 23 shown, transistors 52 and 54 can be used, for example, as the current control unit CU of the pixel circuit. Additionally, transistor 54 can be used as a driving transistor.

[0426] exist Figure 24B In the pixel circuit 23 shown, transistor 54 can be used, for example, as the current control unit CU of the pixel circuit. Alternatively, transistor 54 can be used as a driving transistor.

[0427] exist Figure 24C In the pixel circuit 23 shown, transistors 61, 62, 63, 65, and capacitor 67 can be used, for example, as the current control unit CU of the pixel circuit. Additionally, transistor 63 can be used as a driving transistor.

[0428] exist Figure 25A In the pixel circuit 23 shown, transistors M2, M3, M4, M5, and capacitor C1 can, for example, be used as the current control unit CU of the pixel circuit. Furthermore, transistor M3 can be used as a driving transistor. As an example, Figure 25A This shows an example of using a p-channel transistor as a transistor. Figure 25B An example is shown where transistors M4 and M6 are replaced with n-channel transistors.

[0429] Note that the transistor polarity in the pixel circuit described above is just one example; sometimes the n-channel and p-channel transistors can be interchanged appropriately.

[0430] Figure 24AThe pixel circuit 23 shown includes transistors 51 to 54, capacitor 57, and capacitor 58.

[0431] The gate of transistor 51 is electrically connected to wiring GLa. One of the source and drain of transistor 53 is electrically connected to the other of the source and drain of transistor 52, the other electrode of capacitor 57, and one electrode of light-emitting element 60. The other of the source and drain of transistor 53 is electrically connected to wiring 48. The gate of transistor 53 is electrically connected to wiring GLb.

[0432] Transistor 53 is used as a switch, which controls the on or off state between wiring 48 and one electrode of light-emitting element 60 according to the potential of wiring GLb. Wiring 48 is supplied with a reference potential, for example. Due to the reference potential supplied to wiring 48 through transistor 53, deviations in the gate-source potential of transistor 52 can be suppressed.

[0433] Furthermore, wiring 48 can be used to obtain current values ​​that can be used to set pixel parameters. More specifically, wiring 48 can be used as a monitoring line to output the current flowing through transistor 52 or the current flowing through light-emitting element 60 to the outside of pixel circuit 23. The current output to wiring 48 can be converted into a potential by a source follower circuit, for example, or converted into a digital signal by an AD converter, for example. Note that when wiring 48 is used as a monitoring line, the display device does not need to include a reference potential generation circuit. In addition, when wiring 48 is used as a monitoring line, pixel circuit 23 can be electrically connected to different wiring 48 in each column.

[0434] As transistor 53, an OS transistor is preferably used. As mentioned above, for example, compared to transistors using amorphous silicon, OS transistors have higher field-effect mobility. Therefore, by using an OS transistor as transistor 53, the display device can be driven at high speed.

[0435] One of the source and drain of transistor 52 is electrically connected to one of the source and drain of transistor 54. The other of the source and drain of transistor 54 is electrically connected to wiring ANO. The gate of transistor 54 is electrically connected to wiring GLC. One electrode of capacitor 58 is electrically connected to the other of the source and drain of transistor 52, one of the source and drain of transistor 53, the other electrode of capacitor 57, and one electrode of light-emitting element 60. The other electrode of capacitor 58 is electrically connected to wiring ANO.

[0436] The wiring GLC is electrically connected to the scan line drive circuit. That is, in the pixel circuit 23, there is... Figure 24A In the case of the structure shown, wiring GLa, wiring GLb and wiring GLc are set as wiring GL in the display device.

[0437] Transistor 54 is used as a switch, which has the function of controlling the on or off state between wiring ANO and one of the source and drain of transistor 52 according to the potential of wiring Glc.

[0438] When transistor 54 is turned on, a current corresponding to the gate potential of transistor 52 flows, for example, from wiring ANO to wiring CAT. As a result, light-emitting element 60 emits light with a brightness corresponding to the gate potential of transistor 52. Conversely, when transistor 54 is turned off, no current flows through light-emitting element 60, thereby preventing light emission from occurring.

[0439] As transistor 54, an OS transistor is preferably used. As mentioned above, for example, compared to transistors using amorphous silicon, OS transistors have higher field-effect mobility. Therefore, by using an OS transistor as transistor 54, the display device can be driven at high speed.

[0440] Figure 24B The pixel circuit 23 shown is Figure 24A The difference lies in the connection of transistor 54. Furthermore, in Figure 24B In this case, capacitor 58 was not set.

[0441] exist Figure 24B In this configuration, one of the source and drain of transistor 54 is electrically connected to the other of the source and drain of transistor 51, the gate of transistor 52, and one electrode of capacitor 57. The other of the source and drain of transistor 54 is electrically connected to wiring 49. The gate of transistor 54 is electrically connected to wiring GLC. In pixel circuit 23, there is... Figure 24B In the case of the structure shown, wiring GLa, wiring GLb and wiring GLc are set as wiring GL in the display device.

[0442] When transistor 54 is turned on, the gate potential of transistor 52 can be the potential of wiring 49. Therefore, for example, the light-emitting element 60 can be made to emit light without current flowing through it.

[0443] Figure 24C The pixel circuit 23 shown includes transistors 61, 62, 63, 64, 65, and 66, capacitors 67 and 68, and a light-emitting element 60.

[0444] One of the source and drain of transistor 61 is electrically connected to wiring ANO. The other of the source and drain of transistor 61 is electrically connected to one of the source and drain of transistor 62. One of the source and drain of transistor 62 is electrically connected to one of the source and drain of transistor 63. The gate of transistor 61 is electrically connected to wiring GLd.

[0445] The other of the source and drain of transistor 62 is electrically connected to the gate of transistor 63. The gate of transistor 63 is electrically connected to one electrode of capacitor 67. The gate of transistor 62 is electrically connected to wiring GLe.

[0446] One of the source and drain of transistor 64 is electrically connected to wiring SL. The other of the source and drain of transistor 64 is electrically connected to the other of the source and drain of transistor 63. The other of the source and drain of transistor 63 is electrically connected to one of the source and drain of transistor 65. The gate of transistor 64 is electrically connected to wiring GLf.

[0447] One of the source and drain terminals of transistor 65 is electrically connected to one of the source and drain terminals of transistor 66. One of the source and drain terminals of transistor 66 is electrically connected to the other electrode of capacitor 67. The other electrode of capacitor 67 is electrically connected to one electrode of capacitor 68. One electrode of capacitor 68 is electrically connected to one electrode of light-emitting element 60. The gate of transistor 65 is electrically connected to wiring Glg.

[0448] The other of the source and drain of transistor 66 is electrically connected to wiring 48. The gate of transistor 66 is electrically connected to wiring GLe.

[0449] The other electrode of capacitor 68 is electrically connected to wiring GLf. The other electrode of light-emitting element 60 is electrically connected to wiring CAT.

[0450] Wiring GLd, wiring GLe, wiring GLf, and wiring GLG are electrically connected to the scan line drive circuit. That is, in pixel circuit 23, there is... Figure 24C In the case of the structure shown, wiring GLd, wiring GLe, wiring GLf and wiring GLg are set as wiring GL in the display device.

[0451] Transistors 61, 62, 64, 65, and 66 are used as switches. Transistor 61 has the function of controlling the conduction or non-conductance state between wiring ANO and one of the source and drain of transistor 62, and one of the source and drain of transistor 63, according to the potential of wiring GLd. Transistor 62 has the function of controlling the conduction or non-conductance state between the other of the source and drain of transistor 61, and one of the source and drain of transistor 63, and the gate of transistor 63 and one electrode of capacitor 67, according to the potential of wiring GLf. Transistor 64 has the function of controlling the conduction or non-conductance state between wiring SL and one of the source and drain of transistor 63, and one of the source and drain of transistor 65, according to the potential of wiring GLg. Transistor 65 has the function of controlling the conduction or non-conductance state between the other of the source and drain of transistor 63, and the other of the source and drain of transistor 64, and one electrode of light-emitting element 60, according to the potential of wiring GLg. Transistor 66 has the function of controlling the on or off state between wiring ANO and one electrode of light-emitting element 60 according to the potential of wiring GLe.

[0452] Transistors 61 to 66 are preferably OS transistors. OS transistors have higher field-effect mobility, for example, compared to transistors using amorphous silicon. Therefore, by using OS transistors as transistors 61 to 66, the display device can be driven at high speed.

[0453] Figure 25A The pixel circuit 23 shown includes transistors M1 to M7, capacitor C1, and light-emitting element EL. The pixel circuit is connected to wirings GL1 to GL4 used as gate lines, wiring SL1 used as source lines, wiring VP2 supplied with a fixed potential, wiring ANO used as anode wiring, and wiring CAT used as cathode wiring.

[0454] In transistor M1, the gate is connected to wiring GL2, one of the source and drain is connected to wiring SL1, and the other of the source and drain is connected to one of the source and drain of transistor M2 and one of the source and drain of transistor M3. In transistor M2, the gate is connected to wiring GL3, and the other of the source and drain is connected to wiring ANO. In transistor M3, the gate is connected to one electrode of capacitor C1, the other of the source and drain of transistor M4, and one of the source and drain of transistor M6; the back gate is connected to wiring ANO, and the other of the source and drain is connected to one of the source and drain of transistor M4 and one of the source and drain of transistor M5. The gate of transistor M4 is connected to transistor GL2. In transistor M5, the gate is connected to wiring GL3, the other of the source and drain is connected to one electrode of the light-emitting element EL, and one of the source and drain of transistor M7. In transistor M6, the gate is connected to wiring GL1, and the other of the source and drain is connected to wiring VP2. In transistor M7, the gate is connected to wiring GL4, and the other of the source and drain terminals is connected to wiring VP2. The other electrode of capacitor C1 is connected to wiring ANO.

[0455] Here, examples are shown where transistors M1 through M7 are p-channel transistors, but one or more transistors can also be n-channel transistors. Figure 25B An example is shown where transistors M4 and M6 are replaced with n-channel transistors.

[0456] Transistor M3 is used as the driver transistor, and the other transistors are used as switches. Transistor M3 is preferably a p-channel LTPS transistor. Transistors M4 and M6, which have a significant impact on the noise of capacitor C1, are preferably TG transistors with low parasitic capacitance. Furthermore, transistors M1, M2, M5, and M7 are preferably vertical transistors or LTPS transistors with high on-state current. When using TG transistors and vertical transistors, n-channel transistors are preferred.

[0457] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0458] (Implementation Method 4)

[0459] In this embodiment, a light-receiving device according to one aspect of the present invention is described. The light-receiving device or a portion thereof, as well as the display device or a portion thereof, shown below can be suitably used in the electronic device described in Embodiment 1. The light-receiving portion of the light-receiving device can, for example, be used in the display portion of an electronic device constituting one aspect of the present invention.

[0460] One aspect of the light-receiving device of the present invention includes a light-receiving element (also called a light-receiving device) and a light-emitting element. The light-receiving element has the function of displaying an image using the light-emitting element. Furthermore, the light-receiving element has one or both of the functions of capturing an image using the light-receiving element and sensing an image. Therefore, one aspect of the light-receiving device of the present invention can also be described as a display device, and the light-receiving element can also be described as a display section.

[0461] Alternatively, the light-receiving device of one aspect of the present invention may also include a light-receiving element (also called a light-receiving device) and a light-emitting element.

[0462] First, the light-receiving device, which includes a light-receiving element and a light-emitting element, will be explained.

[0463] One aspect of the light-receiving device of the present invention includes a light-receiving element and a light-emitting element in the light-receiving section. In the light-receiving section of this device, the light-emitting elements are arranged in a matrix, and an image can be displayed in the light-receiving section. Furthermore, in this light-receiving section, the light-receiving elements are arranged in a matrix, and the light-receiving section also has one or both of a camera function and a sensing function. The light-receiving section can be used as an image sensor or a touch sensor, etc. That is, by detecting light in the light-receiving section, image capture, detection of touch operations of an object (such as a finger or pen), etc., can be performed. Moreover, in one aspect of the light-receiving device of the present invention, the light-emitting element can be used as a light source for a sensor. Therefore, it is not necessary to separately provide a light-receiving section and a light source with the light-receiving device, thus reducing the number of components in the electronic device.

[0464] In one aspect of the light-receiving device of the present invention, since the light-receiving element can detect the reflected light (or scattered light) emitted by the light-emitting element included in the light-receiving part when the object reflects (or scatters) the light emitted by the light-emitting element, the light-receiving element can detect the reflected light (or scattered light), so that it can perform the like, such as taking pictures and detecting touch operations, even in dark environments.

[0465] In one aspect of the present invention, the light-emitting element included in the light-emitting device is used as a display element (also referred to as a display device).

[0466] As the light-emitting element, EL elements (also known as EL devices) such as OLEDs or QLEDs are preferred. Examples of light-emitting materials included in EL elements include fluorescent materials, phosphorescent materials, and materials exhibiting thermally activated delayed fluorescence (TADF) materials. In addition to organic compounds, inorganic compounds (such as quantum dot materials) can also be used as the light-emitting material in EL elements. LEDs, such as micro LEDs, can also be used as the light-emitting element.

[0467] One aspect of the light-emitting device of the present invention has the function of detecting emitted light using a light-receiving element.

[0468] When a light-receiving element is used in an image sensor, the light-receiving device can capture images using the light-receiving element. For example, the light-receiving device can be used as a scanner.

[0469] An electronic device employing one aspect of the present invention, using a light-receiving device, can acquire data based on biometric data such as fingerprints and palm prints using the function of an image sensor. In other words, a biometric sensor can be incorporated within the light-receiving device. By incorporating a biometric sensor within the light-receiving device, compared to separately incorporating the light-receiving device and the biometric sensor, the number of components in the electronic device can be reduced, thereby enabling miniaturization and weight reduction of the electronic device.

[0470] Furthermore, when a light-receiving element is used in a touch sensor, the light-emitting device can use the light-receiving element to detect touch operations on an object.

[0471] As a light-receiving element, for example, a pn-type or pin-type photodiode can be used. The light-receiving element is used as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on it and generates a charge. The amount of charge generated by the light-receiving element depends on the amount of light incident on it.

[0472] In particular, organic photodiodes having a layer containing organic compounds are preferred as light-receiving elements. Organic photodiodes are easy to make thin, lightweight and large-area, and their shape and design offer high freedom, so they can be applied to a wide variety of devices.

[0473] In one aspect of the present invention, an organic EL element (also known as an organic EL device) is used as the light-emitting element, and an organic photodiode is used as the light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be integrated into a display device using an organic EL element.

[0474] The number of deposition steps is very large when all the layers constituting the organic EL element and the organic photodiode are fabricated separately. However, since the organic photodiode includes multiple layers that can have the same structure as the organic EL element, the increase in the number of deposition steps can be suppressed by forming the layers with the same structure as the organic EL element in one step.

[0475] For example, one of the electrodes in a pair (the common electrode) can be a layer shared between the light-receiving element and the light-emitting element. Furthermore, at least one of, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can also be a layer shared between the light-receiving element and the light-emitting element. Thus, by sharing a layer between the light-receiving element and the light-emitting element, the number of deposition steps and masks can be reduced, thereby reducing the number of manufacturing steps and the manufacturing cost of the light-emitting device. Moreover, the light-emitting device including the light-receiving element can be manufactured using existing manufacturing equipment and methods for display devices.

[0476] Next, a light-receiving device including a light-receiving element and a light-emitting element will be described. Note that descriptions of the same functions, effects, etc., as those described above may sometimes be omitted.

[0477] In one aspect of the light-receiving device of the present invention, sub-pixels displaying any color include light-receiving elements instead of light-emitting elements, and sub-pixels displaying other colors include light-emitting elements. The light-receiving element has two functions: emitting light (light-emitting function) and receiving light (light-receiving function). For example, in the case where a pixel includes three sub-pixels—a red sub-pixel, a green sub-pixel, and a blue sub-pixel—at least one sub-pixel includes a light-receiving element, and the other sub-pixels include light-emitting elements. Therefore, the light-receiving section of the light-receiving device of one aspect of the present invention has the function of displaying an image using both the light-receiving element and the light-emitting element.

[0478] A light-receiving element is used as both a light-emitting element and a light-receiving element, thereby adding a light-receiving function to a pixel without increasing the number of sub-pixels contained in the pixel. Thus, while maintaining the pixel aperture ratio (aperture ratio of each sub-pixel) and the sharpness of the light-receiving device, one or both of the imaging and sensing functions can be added to the light-receiving part of the light-receiving device. Therefore, compared to the case where sub-pixels including light-receiving elements are provided in addition to sub-pixels including light-emitting elements, the light-receiving device of one aspect of the present invention can improve the pixel aperture ratio and is easier to achieve high resolution.

[0479] In one embodiment of the light-receiving device of the present invention, the light-receiving element and the light-emitting element are arranged in a matrix, thereby enabling the display of an image in the light-receiving section. The light-receiving section can be used for image sensors or touch sensors, etc. In another embodiment of the light-receiving device of the present invention, the light-emitting element can be used as a light source for the sensor. Therefore, it is possible to perform actions such as taking pictures or detecting touch operations even in dark environments.

[0480] Light-emitting elements can be manufactured by combining organic EL elements and organic photodiodes. For example, a light-emitting element can be manufactured by adding an active layer of an organic photodiode to a stacked structure of an organic EL element. Furthermore, in a light-emitting element manufactured by combining an organic EL element and an organic photodiode, the increase in the number of deposition steps can be suppressed by forming a layer together that has the same structure as the organic EL element.

[0481] For example, one of the electrodes in a pair (the common electrode) can be a layer shared between the light-receiving element and the light-emitting element. Furthermore, for example, at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can also be a layer shared between the light-receiving element and the light-emitting element.

[0482] Furthermore, the layers included in a light-emitting element sometimes have different functions when used as a light-receiving element and when used as a light-emitting element. In this specification, the constituent elements are referred to according to their function when the light-emitting element is used as a light-emitting element.

[0483] The light-receiving device of this embodiment has the function of displaying images using a light-emitting element and a light-receiving element. That is, the light-emitting element and the light-receiving element are used as display elements.

[0484] The light-receiving device of this embodiment has the function of detecting light using a light-receiving element. The light-receiving element is capable of detecting light whose wavelength is shorter than the light emitted by the light-receiving element itself.

[0485] When the light-emitting element is used in an image sensor, the light-emitting device of this embodiment can capture images using the light-emitting element. Furthermore, when the light-emitting element is used in a touch sensor, the light-emitting device of this embodiment can detect touch operations on an object using the light-emitting element.

[0486] The light-receiving element is used as a photoelectric conversion element. The light-receiving element can be manufactured by adding an active layer of light-receiving element to the structure of the light-emitting element. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving element.

[0487] In particular, the light-emitting element preferably uses the active layer of an organic photodiode having a layer containing an organic compound. Organic photodiodes are easy to make thin, lightweight, and large-area, and their shape and design offer high freedom, so they can be applied to a wide variety of devices.

[0488] The following description, with reference to the accompanying drawings, illustrates an example of a light-emitting device as one aspect of the present invention.

[0489] [Example 1 of a display device structure]

[0490] [Structure Example 1-1]

[0491] Figure 26A A schematic diagram of the display unit 200 is shown. The display unit 200 includes a substrate 201, a substrate 202, a light-receiving element 212, a light-emitting element 211R, a light-emitting element 211G, a light-emitting element 211B, a functional layer 203, etc.

[0492] Light-emitting elements 211R, 211G, 211B, and light-receiving element 212 are disposed between substrate 201 and substrate 202. Light-emitting elements 211R, 211G, and 211B emit red (R), green (G), or blue (B) light, respectively. Note that, hereinafter, light-emitting elements 211R, 211G, and 211B are sometimes referred to as light-emitting element 211 without distinguishing between them.

[0493] The display unit 200 has multiple pixels arranged in a matrix. Each pixel has one or more sub-pixels. Each sub-pixel has one light-emitting element. For example, a pixel may have a structure with three sub-pixels (three colors R, G, B, or three colors yellow (Y), cyan (C), and magenta (M), etc.) or a structure with four sub-pixels (four colors R, G, B, and white (W), or four colors R, G, B, and Y, etc.). Furthermore, each pixel has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. In addition, a pixel may have multiple light-receiving elements 212.

[0494] Figure 26A This shows the appearance of a finger 220 touching the surface of the substrate 202. A portion of the light emitted by the light-emitting element 211G is reflected by the contact area between the substrate 202 and the finger 220. Then, a portion of the reflected light is incident on the light-receiving element 212, thereby detecting that the finger 220 is in contact with the substrate 202. In other words, the display unit 200 can be used as a touch panel.

[0495] Functional layer 203 includes circuits for driving light-emitting elements 211R, 211G, and 211B, as well as circuits for driving light-receiving element 212. Switches, transistors, capacitors, wiring, etc., are provided in functional layer 203. Alternatively, when driving light-emitting elements 211R, 211G, 211B, and light-receiving element 212 in a passive matrix manner, switches, transistors, etc., may not be provided.

[0496] The display unit 200 preferably has the function of detecting the fingerprint of the finger 220. Figure 26B An enlarged view of the contact portion is schematically shown when the finger 220 touches the substrate 202. Furthermore, Figure 26B The alternating arrangement of light-emitting elements 211 and light-receiving elements 212 is shown.

[0497] Fingerprints of finger 220 are formed by concave and convex portions. Therefore, the convex portions of a fingerprint are like... Figure 26B The substrate 202 is shown to be touched.

[0498] Light reflected from a surface or interface can be either regularly reflected or diffusely reflected. Regularly reflected light is highly directional light where the angle of incidence and the angle of reflection are the same, while diffusely reflected light is less directional light with low intensity dependence on angle. In the light reflected from the surface of finger 220, diffuse reflection is predominant compared to regular reflection. On the other hand, in the light reflected from the interface between substrate 202 and the atmosphere, regular reflection is predominant.

[0499] The light intensity reflected from or incident on the contact or non-contact surfaces of the finger 220 and the substrate 202 onto the light-receiving element 212 located directly below them is the combined intensity of regular reflected light and diffuse reflected light. As described above, in the concave portion of the finger 220, the finger 220 does not contact the substrate 202, therefore regular reflected light (indicated by solid arrows) is dominant; in the convex portion, the finger 220 contacts the substrate 202, therefore diffuse reflected light (indicated by dashed arrows) is dominant. Therefore, the light intensity received by the light-receiving element 212 located directly below the concave portion is higher than that received by the light-receiving element 212 located directly below the convex portion. Thus, a fingerprint of the finger 220 can be captured.

[0500] A clear fingerprint image can be obtained when the spacing between the light-receiving elements 212 is smaller than the distance between two convex parts of a fingerprint, and preferably smaller than the distance between adjacent concave and convex parts. Since the distance between the concave and convex parts of a human fingerprint is approximately 200 μm, the spacing between the light-receiving elements 212 is, for example, 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, even more preferably 50 μm or less, and is 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0501] Figure 26C An example of a fingerprint image captured by the display unit 200 is shown. Figure 26C In the image, the outline of the finger 220 is shown with a dashed line within the imaging range 223, and the outline of the contact portion 221 is shown with a dotted line. Within the contact portion 221, a high-contrast fingerprint 222 can be captured by utilizing the different amounts of light incident on the light-receiving element 212.

[0502] Alternatively, palm print recognition can be performed using the palm as the subject. For example... Figure 27E As shown, a hand is positioned within the camera range 223 to capture the palm print 222b of the hand 220b.

[0503] Note that in Figure 26AIn the structure shown, an example is illustrated where a light-emitting element serving as a display panel and a light-receiving element serving as a sensor capable of reading fingerprints and palm prints are disposed on a substrate 201. However, the light-emitting element and the sensor capable of reading fingerprints and palm prints may not be formed on the same plane. For example, the sensor capable of reading fingerprints and palm prints may be disposed below the display section. For example, an IC chip capable of reading fingerprints and palm prints may be disposed below the display section. However, in this case, compared to the case where the display section itself is used as the sensor, as in one embodiment of the present invention, the volume occupied within the frame increases when the sensor is disposed separately from the display section. Therefore, the freedom of arranging the sensor within the frame decreases. Furthermore, when the area of ​​the sensor is limited, the number of fingers that can be read is also limited.

[0504] In one aspect of the electronic device of the present invention, since the display unit itself is used as a sensor, fingerprints, palm prints, etc., can be read at all locations on the display unit. Therefore, the display unit can operate with any shape, such as longitudinal or transverse, and can appropriately read at appropriate locations with any number of fingers, etc.

[0505] The display unit 200 can also be used as a touch sensor or a digitizer. Figure 26D The image shows the stylus 225 being slid in the direction of the dashed arrow with its tip in contact with the substrate 202.

[0506] like Figure 26D As shown, the position of the top of the stylus 225 can be detected with high precision by incidenting diffusely reflected light diffused on the surface of the stylus 225 that contacts the substrate 202 onto the light-receiving element 212 located in the portion of the surface that overlaps with the contact surface.

[0507] Figure 26E An example of the trajectory 226 of the stylus 225 detected by the display unit 200 is shown. The display unit 200 can detect the position of the detected object, such as the stylus 225, with high positional accuracy, so high-precision drawing can be performed in drawing applications and the like. Furthermore, unlike cases using electrostatic capacitive touch sensors or electromagnetic induction styluses, the position can be detected even for highly insulating objects, so various writing tools (such as pens, glass pens, quill pens, etc.) can be used, regardless of the material of the tip of the stylus 225.

[0508] Here, Figures 26F to 26H An example of a pixel that can be used in the display unit 200 is shown.

[0509] Figure 26F and Figure 26GEach of the pixels shown includes a red (R) light-emitting element 211R, a green (G) light-emitting element 211G, a blue (B) light-emitting element 211B, and a light-receiving element 212. Each pixel includes a pixel circuit for driving the light-emitting element 211R, the light-emitting element 211G, the light-emitting element 211B, and the light-receiving element 212.

[0510] Figure 26F An example is shown with three light-emitting elements and one light-receiving element arranged in a 2×2 matrix. Figure 26G An example is shown where three light-emitting elements are arranged in a row and a horizontally elongated light-receiving element 212 is arranged on the lower side.

[0511] Figure 26H The pixel shown is an example including a white (W) light-emitting element 211W. Here, four sub-pixels are arranged in a column, with a light-receiving element 212 arranged on the lower side.

[0512] Note that the structure of pixels is not limited to the example described, and various other configuration methods can be used.

[0513] [Structure Examples 1-2]

[0514] The following describes structural examples of light-emitting elements that emit visible light, light-emitting elements that emit infrared light, and light-receiving elements.

[0515] Figure 27A The display unit 200A shown is for... Figure 26A The structure shown includes an additional light-emitting element 211IR. The light-emitting element 211IR emits infrared light IR. In this case, it is preferable to use an element capable of receiving at least the infrared light IR emitted by the light-emitting element 211IR as the light-receiving element 212. Furthermore, it is more preferable to use an element capable of receiving both visible light and infrared light as the light-receiving element 212.

[0516] like Figure 27A As shown, when finger 220 touches substrate 202, infrared light IR emitted from light-emitting element 211IR is reflected by finger 220, and a portion of the reflected light is incident on light-receiving element 212, thereby obtaining position data of finger 220.

[0517] Figures 27B to 27D An example of a pixel that can be used in the display unit 200A is shown.

[0518] Figure 27B An example is shown where three light-emitting elements are arranged in a row, and a light-emitting element 211IR and a light-receiving element 212 are arranged laterally below it. Furthermore, Figure 27C An example is shown where four light-emitting elements, including light-emitting element 211IR, are arranged in a row and a light-receiving element 212 is arranged below them.

[0519] Figure 27D An example is shown in which three light-emitting elements and light-receiving elements 212 are arranged in four directions with the light-emitting element 211IR as the center.

[0520] exist Figures 27B to 27D In the pixels shown, the positions of the light-emitting elements can be interchanged, and the positions of the light-emitting elements and the light-receiving elements can be interchanged.

[0521] [Structure Examples 1-3]

[0522] The following description includes examples of structures for light-emitting elements that emit visible light and light-receiving elements that emit and receive visible light.

[0523] Figure 28A The display unit 200B shown includes a light-emitting element 211B, a light-emitting element 211G, and a light-receiving element 213R. The light-receiving element 213R functions as a light-emitting element that emits red (R) light and as a photoelectric conversion element that receives visible light. Figure 28A An example is shown where the light-emitting element 213R receives green (G) light emitted by the light-emitting element 211G. Note that the light-emitting element 213R can also receive blue (B) light emitted by the light-emitting element 211B. Furthermore, the light-emitting element 213R can also receive both green and blue light.

[0524] For example, the light-emitting element 213R preferably receives light whose wavelength is shorter than the light emitted by the light-emitting element 213R itself. Alternatively, the light-emitting element 213R may also receive light whose wavelength is longer than the light emitted by the light it emits (e.g., infrared light). The light-emitting element 213R may receive wavelengths of the same magnitude as the light it emits, but in this case, it also receives the light it emits, which sometimes reduces its luminous efficiency. Therefore, the light-emitting element 213R is preferably configured such that the peaks of its emission spectrum do not overlap with the peaks of its absorption spectrum as much as possible.

[0525] Furthermore, the light emitted by the light-emitting element is not limited to red light. Additionally, the light emitted by the light-emitting element is not limited to a combination of green and blue light. For example, a light-emitting element can be used that emits green or blue light and receives light of a different wavelength than the light it emits.

[0526] Thus, by using the light-emitting element 213R as both a light-emitting element and a light-receiving element, the number of elements arranged in a single pixel can be reduced. Therefore, it is easy to achieve high resolution, high aperture ratio, and high resolution.

[0527] Figures 28B to 28I An example of a pixel that can be used in the display unit 200B is shown.

[0528] Figure 28B An example is shown where light-emitting elements 213R, 211G, and 211B are arranged in a row. Figure 28C An example is shown in which light-emitting elements 211G and 211B are arranged alternately in the longitudinal direction and are arranged next to light-emitting element 213R.

[0529] Figure 28D An example is shown where three light-emitting elements (light-emitting element 211G, light-emitting element 211B, and light-emitting element 211X) and one light-receiving element are arranged in a 2×2 matrix. Light-emitting element 211X is an element that emits light other than infrared (R), light (G), and light (B). Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), infrared (IR), and ultraviolet (UV). When light-emitting element 211X emits infrared light, the light-receiving element preferably has the function of detecting infrared light or detecting both visible and infrared light. The wavelength of the light detected by the light-receiving element can be determined according to the application of the sensor.

[0530] Figure 28E Two pixels are shown. The area including the three elements surrounded by dashed lines corresponds to one pixel. Each pixel includes a light-emitting element 211G, a light-emitting element 211B, and a light-receiving element 213R. Figure 28E In the left pixel of the image, light-emitting element 211G is arranged in the same row as light-receiving element 213R, and light-emitting element 211B is arranged in the same column as light-receiving element 213R. Figure 28E In the right-hand pixel, light-emitting element 211G is arranged in the same row as light-receiving element 213R, and light-emitting element 211B is arranged in the same column as light-emitting element 211G. Figure 28E In the pixel layout shown, light-receiving element 213R, light-emitting element 211G and light-emitting element 211B are repeatedly arranged in the odd-numbered rows and even-numbered rows, and in each column, light-emitting elements or light-receiving elements with different light-emitting colors are arranged in the odd-numbered rows and even-numbered rows respectively.

[0531] Figure 28F The diagram shows four pixels arranged in a Pentile pattern, with each pair of adjacent pixels consisting of a light-emitting element or a light-receiving element that emits a combination of two different colors of light. Figure 28F The top surface shape of the light-emitting element or the light-receiving element is shown.

[0532] Figure 28F The top-left and bottom-right pixels in the image include light-receiving element 213R and light-emitting element 211G. Additionally, the top-right and bottom-left pixels include light-emitting elements 211G and 211B. That is to say, in... Figure 28FIn the example shown, each pixel is equipped with a light-emitting element 211G.

[0533] There are no particular restrictions on the top surface shape of the light-emitting element and the light-receiving element; they can be circular, elliptical, polygonal, or polygonal with curved corners, etc. Figure 28F In the examples shown, the top surface shape of the light-emitting element and the light-receiving element is a square (rhombus) tilted at approximately 45 degrees. Note that the top surface shapes of the light-emitting elements and light-receiving elements of different colors can be different from each other, or they can be the same in some or all of the colors.

[0534] The sizes of the light-emitting and light-receiving areas of the light-emitting and light-receiving elements of different colors can be different from each other, or they can be the same in some or all of the colors. For example, in Figure 28F In addition, the area of ​​the light-emitting region of the light-emitting element 211G in each pixel can be made smaller than the light-emitting region (or the light-receiving region) of other elements.

[0535] Figure 28G Show Figure 28F The example shown is a variation of the pixel arrangement. Specifically, Figure 28G The structure can be achieved by using Figure 28F The structure is obtained by rotating it by 45 degrees. Figure 28F The text states that a pixel consists of two elements, but as... Figure 28G As shown, a pixel can also be described as consisting of four elements.

[0536] Figure 28H yes Figure 28F The image shows a variation of the pixel arrangement. Figure 28H The top-left and bottom-right pixels in the image include light-receiving element 213R and light-emitting element 211G. Additionally, the top-right and bottom-left pixels include light-receiving element 213R and light-emitting element 211B. That is to say, in... Figure 28H In the example shown, each pixel is equipped with a light-receiving element 213R. Each pixel is equipped with a light-receiving element 213R, so it is related to... Figure 28F Compared to the structure shown, Figure 28H The structure shown can be captured in high-resolution images. This, for example, can improve the accuracy of biometric identification.

[0537] Figure 28I yes Figure 28H The example of the modified pixel arrangement shown can be obtained by rotating the pixel arrangement by 45 degrees.

[0538] exist Figure 28IIn this example, we assume that a pixel consists of four elements (two light-emitting elements and two light-receiving elements). Thus, when a pixel includes multiple light-receiving elements with light-receiving capabilities, high-resolution imaging is possible. Therefore, the accuracy of biometric identification can be improved. For example, the image resolution can be up to the root of 2 times the display resolution.

[0539] have Figure 28H or Figure 28I The display device shown includes p first light-emitting elements (p being an integer greater than or equal to 2), q second light-emitting elements (q being an integer greater than or equal to 2), and r light-receiving elements (r being an integer greater than both p and q). p and r satisfy r = 2p. Furthermore, p, q, and r satisfy r = p + q. One of the first and second light-emitting elements emits green light, and the other emits blue light. The light-receiving elements emit red light and have a light-receiving function.

[0540] For example, when using a light-emitting element to detect contact operations, the light emitted from the light source should preferably be difficult for the user to see. Blue light has lower visibility than green light, therefore, a light-emitting element that emits blue light is preferred as the light source. Thus, the light-emitting element preferably has the function of emitting blue light. Note that this is not a limitation; the light-emitting element used as the light source can be appropriately selected based on the sensitivity of the light-emitting element.

[0541] As described above, various pixel arrangements can be applied to the display device of this embodiment.

[0542] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0543] (Implementation Method 5)

[0544] In this embodiment, a light-emitting element and a light-receiving element of a light-emitting device that can be used in one aspect of the present invention are described.

[0545] In this specification, devices manufactured using metal masks or FMM (Fine Metal Mask) are sometimes referred to as MM (Metal Mask) structure devices. Additionally, devices manufactured without metal masks or FMM are sometimes referred to as MML (Metal Mask Less) structure devices.

[0546] Furthermore, in this specification, the structure in which light-emitting elements of each color (here, blue (B), green (G), and red (R)) are separately formed or coated with light-emitting layers is sometimes referred to as an SBS (Side By Side) structure. Additionally, in this specification, a light-emitting element capable of emitting white light is sometimes referred to as a white light-emitting element. By combining a white light-emitting element with a coloring layer (e.g., a color filter), a display device and electronic device including a full-color display section can be realized.

[0547] [Light-emitting element]

[0548] Furthermore, light-emitting elements can be broadly categorized into single-structure and series-structure devices. Single-structure devices preferably have the following structure: a light-emitting unit is included between a pair of electrodes, and this light-emitting unit includes one or more light-emitting layers. To obtain white light emission with a single structure, white light emission can be achieved by selecting the light emission colors of two or more light-emitting layers. For example, in the case of two colors, by making the light emission color of the first light-emitting layer complementary to the light emission color of the second light-emitting layer, a structure in which the entire light-emitting element emits white light can be obtained. Moreover, when using three or more light-emitting layers to achieve white light emission, white light emission can be achieved by combining the light emission colors of the three or more light-emitting layers to make the entire light-emitting device emit white light.

[0549] The series-connected device preferably has the following structure: two or more light-emitting units are included between a pair of electrodes, and each light-emitting unit includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per specified current can be improved, and the reliability of the light-emitting element can be higher than that of a single-structure device. In order to obtain white light emission in the series-connected structure, a structure that combines the light emitted from the light-emitting layers of multiple light-emitting units to obtain white light emission is adopted, thereby achieving white light emission. Note that the combination of light emission colors to obtain white light emission is the same as in the single-structure device. Furthermore, in the series-connected device, it is preferable to provide an intermediate layer such as a charge-generating layer between the multiple light-emitting units.

[0550] Furthermore, when comparing the white light-emitting element (single-structure or series-structure) with the SBS structure light-emitting element, the SBS structure light-emitting element can achieve lower power consumption than the white light-emitting element. Therefore, the SBS structure light-emitting element is preferred when power consumption reduction is desired. On the other hand, the manufacturing process of the white light-emitting element is simpler than that of the SBS structure light-emitting element, thereby reducing manufacturing costs or increasing manufacturing yield, making it a preferred option.

[0551] <Example of a light-emitting element's structure>

[0552] like Figure 29AAs shown, the light-emitting element includes an EL layer 790 between a pair of electrodes (lower electrode 791 and upper electrode 792). The EL layer 790 may be composed of multiple layers such as layer 720, light-emitting layer 711, and layer 730. Layer 720 may include, for example, a layer containing a substance with high electron injection capability (electron injection layer) and a layer containing a substance with high electron transport capability (electron transport layer). Light-emitting layer 711 may, for example, contain a light-emitting compound. Layer 730 may, for example, include a layer containing a substance with high hole injection capability (hole injection layer) and a layer containing a substance with high hole transport capability (hole transport layer).

[0553] The structure including layer 720, light-emitting layer 711, and layer 730 disposed between a pair of electrodes can be used as a single light-emitting unit. This specification will... Figure 29A The structure is called a single structure.

[0554] Figure 29B Show Figure 29A The illustration shows a modified example of the EL layer 790 included in the light-emitting element. Specifically, Figure 29B The light-emitting element shown includes layer 730-1 on the lower electrode 791, layer 730-2 on layer 730-1, light-emitting layer 711 on layer 730-2, layer 720-1 on light-emitting layer 711, layer 720-2 on layer 720-1, and upper electrode 792 on layer 720-2. For example, when the lower electrode 791 is used as the anode and the upper electrode 792 is used as the cathode, layer 730-1 is used as a hole injection layer, layer 730-2 is used as a hole transport layer, layer 720-1 is used as an electron transport layer, and layer 720-2 is used as an electron injection layer. Alternatively, when the lower electrode 791 is used as the cathode and the upper electrode 792 is used as the anode, layer 730-1 is used as an electron injection layer, layer 730-2 is used as an electron transport layer, layer 720-1 is used as a hole transport layer, and layer 720-2 is used as a hole injection layer. By employing the layer structure described above, charge carriers can be efficiently injected into the light-emitting layer 711, thereby improving the efficiency of charge carrier recombination within the light-emitting layer 711.

[0555] In addition, such as Figure 29C and Figure 29D As shown, the structure with multiple light-emitting layers (light-emitting layers 711, 712, 713) disposed between layer 720 and layer 730 is also a variant example of a single structure.

[0556] like Figure 29E and Figure 29F As shown, the structure in which multiple light-emitting units (EL layers 790a and 790b) are connected in series with an intermediate layer (charge generation layer) 740 in between is referred to as a series structure in this specification. In this specification, etc., Figure 29E and Figure 29FThe structure shown is called a series structure, but it is not limited to this; for example, a series structure can also be called a stacked structure. By employing a series structure, light-emitting elements capable of emitting light with high brightness can be realized.

[0557] exist Figure 29C In addition, light-emitting layers 711, 712 and 713 that emit light of the same color can also be used.

[0558] Alternatively, different luminescent materials can be used in luminescent layers 711, 712, and 713. When the light emitted by luminescent layers 711, 712, and 713 is in a complementary color relationship, white light emission can be obtained. Figure 29D An example is shown where a colored layer 795 is used as a color filter. By passing white light through the color filter, light of the desired color can be obtained.

[0559] In addition, Figure 29E Alternatively, the same luminescent material can be used for both luminescent layer 711 and luminescent layer 712. Or, luminescent materials emitting different colors of light can be used for both luminescent layer 711 and luminescent layer 712. When the light emitted by luminescent layer 711 and the light emitted by luminescent layer 712 are complementary colors, white light emission can be obtained. Figure 29F An example is shown where a color layer 795 is also set.

[0560] Note that in Figure 29C , Figure 29D , Figure 29E and Figure 29F In, such as Figure 29B As shown, layers 720 and 730 can also have a stacked structure consisting of two or more layers.

[0561] In addition, Figure 29D In this process, the light-emitting layers 711, 712, and 713 can all use the same light-emitting material. Similarly, in... Figure 29F In this configuration, the same luminescent material can be used for both the luminescent layer 711 and the luminescent layer 712. In this case, by using a color conversion layer instead of the coloring layer 795, light of a desired color different from the luminescent material can be obtained. For example, by using a blue luminescent material as each luminescent layer and allowing blue light to pass through the color conversion layer, light with a wavelength longer than blue (e.g., red, green, etc.) can be obtained. The color conversion layer can use fluorescent materials, phosphorescent materials, or quantum dots, etc.

[0562] The structure in which each light-emitting element emits a different color (blue (B), green (G), and red (R)) is called an SBS (Side By Side) structure.

[0563] The color of light emitted by the light-emitting element can be red, green, blue, cyan, magenta, yellow, or white, depending on the material constituting the EL layer 790. Furthermore, when the light-emitting element has a microcavity structure, the color purity can be further improved.

[0564] White light-emitting elements preferably have a structure in which the light-emitting layer contains two or more light-emitting materials. To obtain white light emission, it is preferable to select light-emitting materials whose light emission is complementary to that of two other light-emitting materials, or to combine the light emission of two or more light-emitting materials to obtain a white light-emitting element. For example, when using two light-emitting layers to obtain white light emission, by making the light emission color of the first light-emitting layer complementary to the light emission color of the second light-emitting layer, a light-emitting element in which the entire element emits white light can be obtained. Furthermore, when using three or more light-emitting layers to obtain white light emission, it is preferable to combine the light emission colors of the three or more light-emitting layers to make the entire light-emitting element emit white light.

[0565] The luminescent layer preferably contains two or more luminescent materials, each exhibiting the spectral characteristics of R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it preferably contains two or more luminescent materials, each exhibiting the spectral characteristics of R, G, and B.

[0566] Figure 30A This is a cross-sectional schematic diagram of light-emitting element 750R, light-emitting element 750G, light-emitting element 750B, and light-receiving element 760. The light-emitting elements 750R, 750G, 750B, and light-receiving element 760 share a common layer including an upper electrode 792.

[0567] Light-emitting element 750R includes pixel electrode 791R, layer 751, layer 752, light-emitting layer 753R, layer 754, layer 755, and upper electrode 792. Light-emitting element 750G includes pixel electrode 791G and light-emitting layer 753G. Light-emitting element 750B includes pixel electrode 791B and light-emitting layer 753B.

[0568] Layer 751 may include, for example, a layer containing a substance with high hole injection capacity (hole injection layer). Layer 752 may include, for example, a layer containing a substance with high hole transport capacity (hole transport layer). Layer 754 may include, for example, a layer containing a substance with high electron transport capacity (electron transport layer). Layer 755 may include, for example, a layer containing a substance with high electron injection capacity (electron injection layer).

[0569] Alternatively, it may have the following structure: layer 751 includes an electron injection layer, layer 752 includes an electron transport layer, layer 754 includes a hole transport layer, and layer 755 includes a hole injection layer.

[0570] Note that in Figure 30AIn the diagram, layers 751 and 752 are shown respectively, but the diagram is not limited to these. For example, when layer 751 has the functions of both a hole injection layer and a hole transport layer, or when layer 751 has the functions of both an electron injection layer and an electron transport layer, layer 752 may be omitted.

[0571] Note that the light-emitting layer 753R included in light-emitting element 750R contains a light-emitting material that emits red light, the light-emitting layer 753G included in light-emitting element 750G contains a light-emitting material that emits green light, and the light-emitting layer 753B included in light-emitting element 750B contains a light-emitting material that emits blue light. Note that light-emitting elements 750G and 750B respectively have a structure in which the light-emitting layer 753R included in light-emitting element 750R is replaced by light-emitting layers 753G and 753B, respectively, and the other structures are the same as those of light-emitting element 750R.

[0572] Note that layers 751, 752, 754, and 755 can have the same or different structures (materials, thicknesses, etc.) in light-emitting elements of different colors.

[0573] The light-receiving element 760 includes a pixel electrode 791PD, layers 761, 762, 763, and a top electrode 792. The light-receiving element 760 may not include a hole injection layer and an electron injection layer.

[0574] Layer 762 includes an active layer (also known as a photoelectric conversion layer). Layer 762 has the function of absorbing light of a specific wavelength band to generate charge carriers (electrons and holes).

[0575] Layers 761 and 763 may each include, for example, either a hole transport layer or an electron transport layer. When layer 761 includes a hole transport layer, layer 763 includes an electron transport layer. Conversely, when layer 761 includes an electron transport layer, layer 763 includes a hole transport layer.

[0576] In addition, the light-receiving element 760 may have a structure in which the pixel electrode 791PD is the anode and the upper electrode 792 is the cathode, or it may have a structure in which the pixel electrode 791PD is the cathode and the upper electrode 792 is the anode.

[0577] Figure 30B yes Figure 30A Examples of variations. Figure 30B An example is shown in which a layer 755 is commonly provided between each light-emitting element and between each light-receiving element, similar to the upper electrode 792. In this case, layer 755 can be referred to as a common layer. Thus, by providing more than one common layer between each light-emitting element and between each light-receiving element, the manufacturing process can be simplified, thereby reducing manufacturing costs.

[0578] Here, layer 755 is used as an electron injection layer or hole injection layer for the light-emitting element 750R, etc. At this time, layer 755 is used as an electron transport layer or hole transport layer for the light-receiving element 760. Therefore, Figure 30B The light-receiving element 760 shown may also omit the layer 763, which is used as an electron transport layer or a hole transport layer.

[0579] [Light-emitting element]

[0580] Here, we illustrate a specific structural example of a light-emitting element.

[0581] A light-emitting element includes at least a light-emitting layer. In addition, as a layer other than the light-emitting layer, the light-emitting element may also include a layer containing a material with high hole injection capacity, a material with high hole transport capacity, a hole blocking material, a material with high electron transport capacity, a material with high electron injection capacity, an electron blocking material, or a bipolar material (a material with both high electron transport capacity and high hole transport capacity).

[0582] Light-emitting elements can use low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting elements can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer printing, printing, inkjet printing, and coating.

[0583] For example, a light-emitting element may include one or more of the following layers in addition to the light-emitting layer: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0584] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection capability. Materials with high hole injection capability can include aromatic amine compounds, composite materials containing both hole transport materials and acceptor materials (electron acceptor materials), etc.

[0585] The hole transport layer is a layer that transports holes injected from the anode through the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. Preferably, the hole transporting material has a hole mobility of 1×10⁻⁶. -6 cm 2 Substances with a density of / Vs or higher. Furthermore, any substance other than those described above can be used, as long as its hole transport capability is higher than its electron transport capability. As a hole transport material, materials with high hole transport capabilities, such as π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) or aromatic amines (compounds containing an aromatic amine skeleton), are preferred.

[0586] The electron transport layer is the layer that transports electrons injected from the cathode through the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron transport material. Preferably, the electron transport material has an electron mobility of 1×10⁻⁶. -6cm 2 Substances with a value of / Vs or higher. Furthermore, any substance other than those mentioned can be used as long as its electron transport capability is higher than its hole transport capability. As electron transport materials, metal complexes with a quinoline skeleton, metal complexes with a benzoquinoline skeleton, metal complexes with an oxazole skeleton, metal complexes with a thiazole skeleton, etc., can be used. Materials with high electron transport capabilities such as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaloline derivatives, dibenzoquinoxaloline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, nitrogen-containing heteroaromatic compounds, and other π-electron-deficient heteroaromatic compounds can also be used.

[0587] The electron injection layer is a layer containing a material with high electron injection capability, through which electrons are injected from the cathode into the electron transport layer. Alkali metals, alkaline earth metals, or compounds containing these substances can be used as materials with high electron injection capability. Composite materials containing both electron transport and donor materials (electron donor materials) can also be used as materials with high electron injection capability.

[0588] As an electron injection layer, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), lithium 8-(hydroxyquinoline) (Liq), lithium 2-(2-pyridyl)phenol (LiPP), lithium 2-(2-pyridyl)-3-hydroxypyridine (LiPPy), lithium 4-phenyl-2-(2-pyridyl)phenol (LiPPP), and lithium oxide (LiO) can be used. x Alkali metals, alkaline earth metals, or their compounds, such as cesium carbonate, are used. Furthermore, the electron injection layer can be a stacked structure with two or more layers. For example, this stacked structure can use lithium fluoride as the first layer and ytterbium as the second layer.

[0589] Alternatively, materials with electron transport properties can be used as the electron injection layer. For example, compounds with non-shared electron pairs and electron-deficient heteroaromatic rings can be used as electron transport materials. Specifically, compounds containing at least one of pyridine rings, diazine rings (pyrimidine rings, pyrazine rings, pyridazine rings), and triazine rings can be used.

[0590] The lowest unoccupied molecular orbital (LUMO) level of organic compounds with non-shared electron pairs is preferably above -3.6 eV and below -2.3 eV. Furthermore, cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy are generally used to estimate the highest occupied molecular orbital (HOMO) level and LUMO level of organic compounds.

[0591] For example, 4,7-diphenyl-1,10-phenanthroline (BPhen), 2,9-bis(naphthyl-2-yl)-4,7-diphenyl-1,10-phenanthroline (NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (mPPhen2P), diaquinoxolino[2,3-a:2',3'-c]phenazine (HATNA), and 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (TmPPPyTz) can be used in organic compounds with non-shared electron pairs. Furthermore, compared to BPhen, NBPhen has a higher glass transition temperature (Tg) and better heat resistance.

[0592] The luminescent layer is a layer containing a luminescent substance. The luminescent layer may contain one or more luminescent substances. Furthermore, substances exhibiting luminescent colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red are appropriately used as luminescent substances. Additionally, substances emitting near-infrared light may also be used as luminescent substances.

[0593] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0594] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0595] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) with 4H-triazole, 1H-triazole, imidazole, pyrimidine, pyrazine, or pyridine skeletons; organometallic complexes (especially iridium complexes) with phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0596] In addition to the luminescent material (guest material), the luminescent layer may also contain one or more organic compounds (host material, auxiliary material, etc.). One or both of hole transport materials and electron transport materials can be used as one or more organic compounds. Furthermore, bipolar materials or TADF materials can also be used as one or more organic compounds.

[0597] For example, the luminescent layer preferably comprises a combination of a phosphorescent material, a hole transport material that readily forms exciton complexes, and an electron transport material. By employing such a structure, ExTET (Exciplex-Triplet Energy Transfer), which utilizes energy transfer from the exciton complex to the luminescent material (phosphorescent material), can be efficiently obtained. By selecting a combination of exciton complexes that emit light with wavelengths overlapping the absorption band on the lowest energy side of the luminescent material, energy transfer can be facilitated, resulting in efficient luminescence. This structure enables the simultaneous achievement of high efficiency, low-voltage operation, and long lifetime for the luminescent element.

[0598] [Light receiving element]

[0599] The active layer of the light-receiving element contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor contained in the active layer is shown. Because organic semiconductors can be used, the light-emitting layer and the active layer can be formed using the same method (e.g., vacuum evaporation), and the manufacturing equipment can be shared, which is preferred.

[0600] Examples of materials that can be used as n-type semiconductors in the active layer include fullerenes (e.g., C). 60 C 70 Organic semiconductor materials with electron-accepting properties include fullerenes and their derivatives. Fullerenes have a soccer ball shape, which is energy stable. Fullerenes have deep (low) HOMO and LUMO energy levels. Because of the deep LUMO level, fullerenes exhibit extremely high electron acceptor properties. Generally, electron donor properties increase when π-electron conjugation (resonance) expands in a plane, as in benzene. However, due to the spherical shape of fullerenes, even with expanded π-electron conjugation, electron acceptor properties remain high. High electron acceptor properties lead to rapid and efficient charge separation, which is beneficial for light-receiving elements. 60 C 70 Both have broad absorption bands in the visible light region, especially C. 70 With C 60Compared to systems with larger π-electron conjugation, it also exhibits a wider absorption band in the long wavelength region, making it preferred. In addition, [6,6]-phenyl-C can be cited as a fullerene derivative. 71 methyl butyrate (abbreviated as PC70BM), [6,6]-phenyl-C 61 1,1'',4',4''-tetrahydro-bis[1,4]methanenaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C 60 (abbreviated as ICBA), etc.

[0601] Examples of materials that can be used as n-type semiconductors include metal complexes with a quinoline skeleton, metal complexes with a benzoquinoline skeleton, metal complexes with an oxazole skeleton, metal complexes with a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0602] Examples of p-type semiconductor materials containing active layers include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone, which are organic semiconductor materials with electron-donating properties.

[0603] In addition, examples of materials that can be used as p-type semiconductors include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds with an aromatic amine skeleton. Furthermore, examples of materials that can be used as p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indole-carbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthylphthalocyanine derivatives, quinacridone derivatives, polyphenylene oxide derivatives, poly(p-phenylene oxide) derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, or polythiophene derivatives.

[0604] The HOMO energy level of an organic semiconductor material with electron donor properties is preferably shallower (higher) than that of an organic semiconductor material with electron receiver properties. Similarly, the LUMO energy level of an organic semiconductor material with electron donor properties is preferably shallower (higher) than that of an organic semiconductor material with electron receiver properties.

[0605] Spherical fullerenes are preferably used as organic semiconductor materials with electron-accepting properties, and organic semiconductor materials with shapes similar to planar shapes are preferably used as organic semiconductor materials with electron-donating properties. Molecules with similar shapes tend to aggregate easily, and when the same type of molecule aggregates, the energy levels of the molecular orbitals are similar, which can improve the carrier transport performance.

[0606] For example, it is preferable to co-deposit n-type semiconductors and p-type semiconductors to form the active layer. Alternatively, n-type semiconductors and p-type semiconductors can be stacked to form the active layer.

[0607] The light-receiving element may also include layers other than the active layer, such as layers containing materials with high hole transport, materials with high electron transport, or bipolar materials (materials with high electron and hole transport). Furthermore, it is not limited to these; it may also include layers containing materials with high hole injection, hole blocking materials, materials with high electron injection, or electron blocking materials.

[0608] The light-receiving element can use low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving element can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer printing, printing, inkjet printing, coating, etc.

[0609] For example, polymers such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transport or electron blocking materials. Conversely, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as ethoxylated polyethyleneimine (PEIE) can be used as electron transport or hole blocking materials. The light-receiving element may also include, for example, a mixed film of PEIE and ZnO.

[0610] As the active layer, polymeric compounds such as poly[[4,8-bis[5-(2-ethylhexyl)-2-thiophene]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymers (abbreviated as PBDB-T) or PBDB-T derivatives can be used. For example, methods such as dispersing acceptor materials into PBDB-T or PBDB-T derivatives can be used.

[0611] Furthermore, three or more materials can be used as the active layer. For example, in order to broaden the absorption wavelength region, a third material can be mixed in addition to the materials of n-type semiconductors and p-type semiconductors. In this case, a low-molecular-weight compound or a high-molecular-weight compound can be used as the third material.

[0612] The above is an explanation of the light-receiving element.

[0613] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0614] (Implementation Method 6)

[0615] In this embodiment, a structural example of a display device that can be used in an electronic device according to one aspect of the present invention is described. The display unit of the electronic device according to one aspect of the present invention may include a light-emitting element and a light-receiving element included in the display device.

[0616] One aspect of the present invention is a display device comprising a light-emitting element and a light-receiving element. For example, a full-color display device can be realized by comprising three light-emitting elements that emit red (R), green (G), or blue (B) light respectively.

[0617] In one aspect of the present invention, the EL layer and the EL layer, as well as the EL layer and the active layer, are processed into fine patterns using photolithography without the use of a shadow mask such as a metal mask. This allows for the realization of a display device with high resolution and high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layers can be manufactured separately, a display device with extremely vivid display, high contrast, and high display quality can be realized.

[0618] For example, in methods using metal masks, it is difficult to set the spacing between EL layers of different colors or between an EL layer and an active layer to be less than 10 μm. However, according to the method described above, this spacing can be reduced to less than 3 μm, less than 2 μm, or less than 1 μm. For example, by using an LSI exposure apparatus, this distance can be reduced to less than 500 nm, less than 200 nm, less than 100 nm, or even less than 50 nm. This significantly reduces the area of ​​non-light-emitting regions that may exist between two light-emitting elements or between a light-emitting element and a light-receiving element, allowing the aperture ratio to approach 100%. For example, aperture ratios of 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more but less than 100% can also be achieved.

[0619] Furthermore, the dimensions of the EL layer and the active layer themselves can be significantly reduced compared to the case where a metal mask is used. Additionally, for example, when forming EL layers separately using a metal mask, the thickness of the island-shaped EL layer differs between its center and ends, thus reducing the effective area usable as a light-emitting region relative to the overall area of ​​the EL layer. On the other hand, in the aforementioned manufacturing method, island-shaped EL layers are formed by processing a film deposited to a uniform thickness, resulting in uniform thickness. Even with a small EL layer size, almost its entire area can be used as a light-emitting region. Therefore, this manufacturing method achieves both high resolution and a high aperture ratio.

[0620] Organic films formed using Fine Metal Mask (FMM) are mostly films with very small cone angles (e.g., greater than 0 degrees and less than 30 degrees) that become thinner towards the end. Therefore, the sides and top surface of organic films formed using FMM are continuously connected, making it difficult to clearly identify the sides. On the other hand, one aspect of the present invention includes an EL layer formed without using FMM, thus having clearly defined sides. In particular, in one aspect of the present invention, it is preferable to have a portion of the EL layer with a cone angle of 30 degrees or more and less than 120 degrees, and more preferably a portion with a cone angle of 60 degrees or more and less than 120 degrees.

[0621] Note that, in this specification, a tapered end of an object refers to a cross-sectional shape in which the angle between the side surface and the forming surface (bottom surface) in the region of the end is greater than 0 degrees and less than 90 degrees, and the thickness increases continuously from the end. Furthermore, the tapered angle refers to the angle between the bottom surface (the surface being formed) and the side surface (the surface) of the end of the object.

[0622] The following provides a more specific example.

[0623] Figure 31A This diagram shows a top view of the display device 100. The display device 100 includes a plurality of light-emitting elements 90R that emit red light, a plurality of light-emitting elements 90G that emit green light, a plurality of light-emitting elements 90B that emit blue light, and a plurality of light-receiving elements 90S. The display device 100 includes a substrate 101, on which the light-emitting elements 90R, 90G, 90B, and 90S are all disposed. Figure 31A In order to easily distinguish each light-emitting element, the light-emitting area of ​​each light-emitting element or light-receiving element is marked with the symbols R, G, B, and S.

[0624] The light-emitting elements 90R, 90G, 90B and 90S are arranged in a matrix. Figure 31AA structure in which two elements are alternately arranged in one direction is shown. Note that the arrangement method of the light-emitting elements is not limited to this, and arrangement methods such as stripe arrangement, S-stripe arrangement, Delta arrangement, Bayer arrangement, or zigzag arrangement can be used, and Pentile arrangement or Diamond arrangement can also be used, etc.

[0625] In addition, Figure 31A A connection electrode 111C electrically connected to the common electrode 113 is shown. The connection electrode 111C is supplied with a potential (for example, an anode potential or a cathode potential) supplied to the common electrode 113. The connection electrode 111C is provided outside the display area where the light-emitting elements 90R, etc. are arranged. In addition, in Figure 31A the common electrode 113 is indicated by a dotted line.

[0626] The connection electrode 111C can be provided along the outer periphery of the display area. For example, it can be provided along one side of the outer periphery of the display area, or can straddle two or more sides of the outer periphery of the display area. That is, in the case where the top surface shape of the display area is square, the top surface shape of the connection electrode 111C can be strip-shaped, L-shaped, "冂"-shaped (square bracket-shaped), or quadrangular, etc.

[0627] Figure 31B is a schematic cross-sectional view corresponding to the dotted lines A1 - A2 and C1 - C2 in Figure 31A . Figure 31B is a schematic cross-sectional view of the light-emitting element 9OB, the light-emitting element 9OR, the light-receiving element 9OS, and the connection electrode 111C.

[0628] Note that the light-emitting element 9OG not shown in the schematic cross-sectional view can have the same structure as the light-emitting element 9OB or the light-emitting element 9OR, and the following description can be referred to thereto.

[0629] The light-emitting element 9OB includes a pixel electrode 111, an organic layer 112B, an organic layer 114, and a common electrode 113. The light-emitting element 9OR includes a pixel electrode 111, an organic layer 112R, an organic layer 114, and a common electrode 113. The light-receiving element 9OS includes a pixel electrode 111, an organic layer 115, an organic layer 114, and a common electrode 113. The organic layer 114 and the common electrode 113 are commonly provided in the light-emitting element 9OB, the light-emitting element 9OR, and the light-receiving element 9OS. The organic layer 114 can also be said to be a common layer. The pixel electrodes 111 are provided separately from each other between the respective light-emitting elements and between the light-emitting element and the light-receiving element.

[0630] Organic layer 112R contains at least a luminescent organic compound that emits red light. Organic layer 112B contains at least a luminescent organic compound that emits blue light. Organic layer 115 contains a photoelectric conversion material that is sensitive to the wavelength region of visible or infrared light. Organic layers 112R and 112B may also be referred to as EL layers.

[0631] Organic layers 112R, 112B, and 115 may further include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. Organic layer 114 may have a structure that does not include a light-emitting layer. For example, organic layer 114 may include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0632] Here, the uppermost layer in the stacked structure of organic layers 112R, 112B, and 115, that is, the layer in contact with organic layer 114, is preferably a layer other than the light-emitting layer. For example, it is preferable to use a structure in which an electron injection layer, electron transport layer, hole injection layer, hole transport layer, or other layers are provided over the light-emitting layer and the layer is in contact with organic layer 114. In this way, when manufacturing each light-emitting element, the top surface of the light-emitting layer can be protected by other layers, thereby improving the reliability of the light-emitting element.

[0633] Pixel electrodes 111 are respectively disposed in each element. Furthermore, the common electrode 113 and the organic layer 114 are a single layer shared by all light-emitting elements. Either the pixel electrode or the common electrode 113 uses a conductive film that is transparent to visible light, while the other uses a reflective conductive film. By making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emitting (bottom-emitting structure) display device can be realized. Conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emitting (top-emitting structure) display device can be realized. Furthermore, by making both the pixel electrode and the common electrode 113 transparent, a double-sided emitting (double-sided emitting structure) display device can be realized.

[0634] An insulating layer 131 is provided at the end of the pixel electrode 111. The end of the insulating layer 131 preferably has a tapered shape. Note that in this specification, etc., "the end of the object has a tapered shape" means having a cross-sectional shape in which the angle formed between the surface and the surface to be formed in the region of its end is greater than 0 degrees and less than 90 degrees; and its thickness gradually increases from the end.

[0635] Furthermore, by using an organic resin in the insulating layer 131, its surface can be made to have a gentle curve. Therefore, the coverage of the film formed on the insulating layer 131 can be improved.

[0636] Materials that can be used for insulating layer 131 include, for example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of these resins.

[0637] Alternatively, the insulating layer 131 can also be made of an inorganic insulating material. Materials suitable for the insulating layer 131 include, for example, oxides or nitrides such as silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, aluminum oxide, aluminum oxynitride, and hafnium oxide. Additionally, materials such as yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide can also be used.

[0638] like Figure 31B As shown, two organic layers are disposed separately between light-emitting elements of different colors and between the light-emitting elements and the light-receiving elements, with a gap between them. Thus, it is preferable that organic layers 112R, 112B, and 115 are disposed in a manner that prevents them from contacting each other. This effectively prevents unintended light emission caused by current flowing through the two adjacent organic layers. Consequently, contrast is improved, and a display device with high display quality can be achieved.

[0639] Preferably, the cone angles of organic layers 112R, 112B, and 115 are 30 degrees or more. Preferably, the angle between the side surface (surface) and bottom surface (formed surface) of the ends of organic layers 112R, 112G, and 112B is 30 degrees or more and 120 degrees or less, more preferably 45 degrees or more and 120 degrees or less, and even more preferably 60 degrees or more and 120 degrees. Alternatively, preferably, the cone angles of organic layers 112R, 112G, and 112B are 90 degrees or approximately (e.g., 80 degrees or more and 100 degrees or less).

[0640] A protective layer 121 is provided on the common electrode 113. The protective layer 121 has the function of preventing water and other impurities from diffusing from above to each light-emitting element.

[0641] The protective layer 121 may, for example, have a single-layer structure or a multilayer structure comprising at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide films, silicon oxynitride films, silicon oxynitride films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 121.

[0642] Alternatively, a laminated film of inorganic and organic insulating films can be used as the protective layer 121. For example, it is preferable to sandwich an organic insulating film between a pair of inorganic insulating films. Furthermore, the organic insulating film is preferably used as a planarization film. Therefore, the top surface of the organic insulating film can be flattened, thus improving the coverage of the inorganic insulating film thereon and thereby enhancing its barrier properties. Additionally, the flattened top surface of the protective layer 121 reduces the influence of the uneven shape of the underlying structure when a structure (e.g., a color filter, electrodes for a touch sensor, or a lens array) is placed above the protective layer 121, which is therefore preferable.

[0643] In the connecting portion 130, a common electrode 113 is provided on the connecting electrode 111C and contacts thereto, and a protective layer 121 is provided covering the common electrode 113. In addition, an insulating layer 131 is provided at the end covering the connecting electrode 111C.

[0644] The following are related to Figure 31B Examples of display devices with different structures will be described. Specifically, an example without the insulating layer 131 will be shown.

[0645] Figures 32A to 32D An example is shown where the side of pixel electrode 111 is substantially aligned with the side of organic layer 112R, organic layer 112B, or organic layer 115.

[0646] exist Figure 32A In the process, an organic layer 114 is provided on the top and side surfaces of the organic layers 112R, 112B, and 115. The organic layer 114 can prevent short circuits caused by contact between the pixel electrode 111 and the common electrode 113.

[0647] Figure 32B An example is shown that includes an insulating layer 125 disposed in contact with the sides of organic layers 112R, 112G, 112B, and pixel electrode 111. The insulating layer 125 can effectively prevent electrical short circuits between pixel electrode 111 and common electrode 113 and leakage current between them.

[0648] The insulating layer 125 can be an insulating layer containing inorganic materials. Inorganic insulating films such as oxide insulating films, nitride insulating films, oxynitride insulating films, and oxynitride insulating films can be used as the insulating layer 125. The insulating layer 125 can be a single-layer structure or a multilayer structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. In particular, by using inorganic insulating films such as aluminum oxide films, hafnium oxide films, and silicon oxide films formed using the ALD method for the insulating layer 125, an insulating layer 125 with fewer pinholes and excellent protection of the organic layer can be formed.

[0649] In this specification, etc., "oxynitride" refers to a material in which the oxygen content is greater than the nitrogen content in its composition, while "nitrogen oxide" refers to a material in which the nitrogen content is greater than the oxygen content in its composition. For example, "silicon oxynitride" refers to a material in which the oxygen content is greater than the nitrogen content in its composition, while "silicon oxynitride" refers to a material in which the nitrogen content is greater than the oxygen content in its composition.

[0650] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. Preferably, the insulating layer 125 is formed using the ALD method, which has excellent coverage.

[0651] exist Figure 32C In this process, a resin layer 126 is provided between two adjacent light-emitting elements or between a light-emitting element and a light-receiving element, in a manner that fills the gap between two opposing pixel electrodes and the gap between two opposing organic layers. The resin layer 126 can planarize the surfaces on which the organic layer 114, the common electrode 113, etc. are formed, and can prevent the common electrode 113 from being disconnected due to poor coverage of the steps between adjacent light-emitting elements.

[0652] As resin layer 126, an insulating layer containing organic materials can be appropriately used. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of said resins can be used as resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can also be used as resin layer 126. Furthermore, a photosensitive resin can also be used as resin layer 126. Photoresist can also be used as the photosensitive resin. Positive or negative materials can also be used as the photosensitive resin.

[0653] Alternatively, the function of suppressing color mixing can be added by using a colored material (e.g., a material containing black pigment) as the resin layer 126 to block stray light from adjacent pixels.

[0654] exist Figure 32D The device includes an insulating layer 125 and a resin layer 126 disposed on the insulating layer 125. Since the insulating layer 125, the organic layer 112R, etc., do not contact the resin layer 126, it can prevent impurities such as moisture in the resin layer 126 from diffusing into the organic layer 112R, etc., thereby providing a display device with high reliability.

[0655] Alternatively, a mechanism can be provided in which a reflective film (e.g., a metal film selected from one or more of silver, palladium, copper, titanium, and aluminum) is provided between the insulating layer 125 and the resin layer 126 to reflect the light emitted by the light-emitting layer, thereby improving the light extraction efficiency.

[0656] Figures 33A to 33C An example is shown where the width of pixel electrode 111 is larger than the width of organic layer 112R, organic layer 112B, or organic layer 115. Organic layer 112R, etc., is located inside the end of pixel electrode 111.

[0657] Figure 33A An example is shown when the insulating layer 125 is included. The insulating layer 125 is provided in such a way that it covers the sides of the organic layer included in the light-emitting element or light-receiving element, a portion of the top surface of the pixel electrode 111, and the sides.

[0658] Figure 33B An example is shown including the resin layer 126. The resin layer 126 is located between two adjacent light-emitting elements or between a light-emitting element and a light-receiving element, and is disposed in such a way that it covers the side surface of the organic layer and the top and side surfaces of the pixel electrode 111.

[0659] Figure 33C An example is shown where both an insulating layer 125 and a resin layer 126 are included. An insulating layer 125 is provided between an organic layer 112R and the resin layer 126.

[0660] Figures 34A to 34D An example is shown where the width of pixel electrode 111 is smaller than the width of organic layer 112R, organic layer 112B, or organic layer 115. Organic layer 112R, etc., extend outward beyond the end of pixel electrode 111.

[0661] Figure 34B An example including an insulating layer 125 is shown. The insulating layer 125 is provided in such a way that it contacts the sides of the organic layers of two adjacent light-emitting elements. In addition, the insulating layer 125 may not only cover the sides of the organic layers 112R, etc., but may also be provided in such a way that it covers a portion of its top surface.

[0662] Figure 34C An example including a resin layer 126 is shown. The resin layer 126 is located between two adjacent light-emitting elements and is disposed such that it covers a portion of the side surface and top surface of the organic layer 112R, etc. Alternatively, the resin layer 126 may be configured to contact the side surface of the organic layer 112R, etc., without covering the top surface.

[0663] Figure 34D An example is shown where both an insulating layer 125 and a resin layer 126 are included. An insulating layer 125 is provided between an organic layer 112R and the resin layer 126.

[0664] Here, an example of the structure of the resin layer 126 will be described.

[0665] The flatter the top surface of the resin layer 126, the better. However, sometimes the surface of the resin layer 126 is concave or convex due to the uneven shape of the surface on which the resin layer 126 is formed, the formation conditions of the resin layer 126, etc.

[0666] Figures 35A to 36F This is an enlarged view of the end of the pixel electrode 111R included in the light-emitting element 90R, the end of the pixel electrode 111G included in the light-emitting element 90G, and their vicinity. An organic layer 112G is disposed on the pixel electrode 111G.

[0667] Figure 35A , Figure 35B and Figure 35C An enlarged view of resin layer 126 and its vicinity is shown when the top surface of resin layer 126 is flat. Figure 35A An example is shown where the width of the organic layer 112R, etc., is larger than that of the pixel electrode 111. Figure 35B An example is shown where the widths of pixel electrode 111 and organic layer 112R are approximately the same. Figure 35C An example is shown where the width of the organic layer 112R is smaller compared to the pixel electrode 111.

[0668] like Figure 35A As shown, since the organic layer 112R covers the end of the pixel electrode 111, it is preferable that the end of the pixel electrode 111 is tapered. This improves the step coverage of the organic layer 112R, thereby providing a highly reliable display device.

[0669] Figure 35D , Figure 35E and Figure 35F An example is shown where the top surface of the resin layer 126 is concave. In this case, the top surfaces of the organic layer 114, the common electrode 113, and the protective layer 121 are formed with concave portions that reflect the concave top surface of the resin layer 126.

[0670] Figure 36A , Figure 36B and Figure 36C An example is shown where the top surface of the resin layer 126 is convex. In this case, the top surfaces of the organic layer 114, the common electrode 113, and the protective layer 121 are formed with convex portions that reflect the convex top surface of the resin layer 126.

[0671] Figure 36D , Figure 36E and Figure 36F An example is shown where a portion of the resin layer 126 covers a portion of the upper end and top surface of the organic layer 112R and a portion of the upper end and top surface of the organic layer 112G. In this case, an insulating layer 125 is provided between the resin layer 126 and the top surface of the organic layer 112R or the organic layer 112G.

[0672] in addition, Figure 36D , Figure 36E and Figure 36F An example is shown where a portion of the top surface of the resin layer 126 is concave. In this case, the organic layer 114, the common electrode 113, and the protective layer 121 are formed with an uneven shape that reflects the shape of the resin layer 126.

[0673] The above is an explanation of an example of the structure of a resin layer.

[0674] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0675] (Implementation Method 7)

[0676] In this embodiment, an example of the structure of a display device and display module of an electronic device that can be used in one aspect of the present invention will be described. Here, a display device capable of displaying images will be described, but the light-emitting element can also be used as a light-receiving device by being used as a light source.

[0677] Furthermore, the display device in this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device in this embodiment can also be used as a display unit for devices such as: electronic devices with large screens, such as television sets, desktop or laptop personal computers, monitors for computers, digital signage, large game machines such as pinball machines, etc.; digital cameras; digital video cameras; digital photo frames; mobile phones; portable game consoles; smartphones; watch-type terminals; tablet terminals; portable information terminals; and sound reproduction devices.

[0678] [Light-emitting device 400]

[0679] Figure 37 A perspective view of the light-emitting device 400 is shown. Figure 38A A cross-sectional view of the light-emitting device 400 is shown.

[0680] The display device 400 has a structure that bonds substrate 452 and substrate 451. Figure 37 In the image, substrate 452 is represented by a dashed line.

[0681] The display device 400 includes a display unit 462, a circuit 464, and wiring 465, etc. Figure 37 An example is shown where IC473 and FPC472 are installed in the display device 400. Therefore, it is also possible to... Figure 37 The structure shown is referred to as a display module including a display device 400, an IC (integrated circuit), and an FPC. The display unit 462 may include a light-emitting element and a transistor connected to the light-emitting element. The display unit 462 may include a light-receiving element and a transistor connected to the light-receiving element. The display device 400 can be applied to an electronic device according to one aspect of the present invention, and the circuit 464 and the IC may be included in the control circuit section of the electronic device according to one aspect of the present invention.

[0682] For example, a scan line drive circuit can be used as circuit 464.

[0683] Wiring 465 has the function of supplying signals and power to display unit 462 and circuit 464. The signals and power are input to wiring 465 from the outside via FPC 472 or from IC 473.

[0684] Figure 37 An example is shown where IC 473 is mounted on substrate 451 using COG (Chip On Glass) or COF (Chip On Film) methods. IC 473 can be, for example, an IC including scan line drive circuitry or signal line drive circuitry. Note that it is not necessary for display device 400 and display module to have an IC mounted on them. Alternatively, IC can be mounted on an FPC using COF or similar methods.

[0685] Figure 38A An example of a cross-section showing a portion of the display device 400 including the FPC 472, a portion of the circuit 464, a portion of the display section 462, and a portion of the area including the connection section. Figure 38A In particular, an example of a cross-section is shown when the area of ​​the display section 462 including the light-emitting element 430b that emits green light (G) and the light-receiving element 440 that receives reflected light (L) is cut off.

[0686] Figure 38A The display device 400 shown includes transistors 252, 260, 258, light-emitting element 430b, and light-receiving element 440 between substrates 453 and 454.

[0687] The light-emitting element 430b and the light-receiving element 440 may use the light-emitting element or the light-receiving element illustrated above.

[0688] Here, when a pixel of a display device comprises three sub-pixels having light-emitting elements that emit different colors from each other, examples of these three sub-pixels include sub-pixels of red (R), green (G), and blue (B), and sub-pixels of yellow (Y), cyan (C), and magenta (M). When four sub-pixels are included, examples of these four sub-pixels include sub-pixels of R, G, B, and white (W), and sub-pixels of R, G, B, and Y. Furthermore, a sub-pixel may also include a light-emitting element that emits infrared light.

[0689] Furthermore, the light-receiving element 440 can be a photoelectric conversion element that is sensitive to light in the red, green, or blue wavelength region or a photoelectric conversion element that is sensitive to light in the infrared wavelength region.

[0690] Furthermore, the substrate 454 and the protective layer 416 are bonded together by an adhesive layer 442. The adhesive layer 442 overlaps with the light-emitting element 430b and the light-receiving element 440, respectively, and the display device 400 adopts a solid sealing structure. The substrate 454 is provided with a light-shielding layer 417.

[0691] The light-emitting element 430b and the light-receiving element 440, as pixel electrodes, include conductive layers 411a, 411b, and 411c. Conductive layer 411b is reflective of visible light and is used as a reflective electrode. Conductive layer 411c is transmissive of visible light and is used as an optical adjustment layer.

[0692] The conductive layer 411a in the light-emitting element 430b is electrically connected to the conductive layer 272b included in the transistor 260 through an opening provided in the insulating layer 264. The transistor 260 has the function of controlling the driving of the light-emitting element. On the other hand, the conductive layer 411a in the light-receiving element 440 is electrically connected to the conductive layer 272b in the transistor 258. The transistor 258 has the function of controlling the timing of exposure using the light-receiving element 440.

[0693] The pixel electrode is covered by an EL layer 412G or a photoelectric conversion layer 412S. An insulating layer 491 is provided in contact with the side surfaces of the EL layer 412G and the photoelectric conversion layer 412S, and a resin layer 492 is provided to fill the recesses of the insulating layer 491. An organic layer 414, a common electrode 413, and a protective layer 416 are provided covering the EL layer 412G and the photoelectric conversion layer 412S. By forming the protective layer 416 covering the light-emitting element, impurities such as water can be prevented from entering the light-emitting element, thereby improving the reliability of the light-emitting element.

[0694] The light G emitted by the light-emitting element 430b is emitted to one side of the substrate 452. The light-receiving element 440 receives the light L through the substrate 452 and converts it into an electrical signal. The substrate 452 is preferably made of a material with high transmittance to visible light.

[0695] Transistors 252, 260, and 258 are all disposed on substrate 451. These transistors can be formed using the same material and the same process.

[0696] Note that transistors 252, 260, and 258 can also be manufactured with different structures. For example, transistors with or without a back gate can be manufactured separately, and transistors with different materials and thicknesses for the semiconductor, gate electrode, gate insulating layer, source electrode, and drain electrode can also be manufactured separately.

[0697] By using a flexible material for substrate 453, the flexibility of the display device can be improved.

[0698] When the display device 400 is flexible, firstly, an adhesive layer is used to bond a manufacturing substrate, on which an insulating layer 262, transistors, light-emitting elements, light-receiving elements, etc., are disposed, to a substrate 454 on which a light-shielding layer 417 is disposed. Then, a substrate 453 is bonded to the surface exposed by peeling off the manufacturing substrate, thereby transferring the constituent elements formed on the manufacturing substrate to the substrate 453. This improves the flexibility of the display device 400.

[0699] A connection portion 254 is provided in a region of substrate 453 that does not overlap with substrate 454. In the connection portion 254, wiring 465 is electrically connected to FPC 472 via conductive layer 466 and connection layer 292. Conductive layer 466 can be obtained by processing a conductive film identical to that of the pixel electrode. Therefore, the connection portion 254 can be electrically connected to FPC 472 via connection layer 292.

[0700] Transistors 252, 260, and 258 include: a conductive layer 271 serving as a gate; an insulating layer 261 serving as a gate insulating layer; a semiconductor layer 281 including a channel formation region 281i and a pair of low-resistance regions 281n; a conductive layer 272a connected to one of the pair of low-resistance regions 281n; a conductive layer 272b connected to the other of the pair of low-resistance regions 281n; an insulating layer 275 serving as a gate insulating layer; a conductive layer 273 serving as a gate; and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel formation region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel formation region 281i.

[0701] Conductive layers 272a and 272b are connected to the low-resistance region 281n through an opening in the insulating layer 265. One of the conductive layers 272a and 272b serves as the source, and the other serves as the drain.

[0702] Figure 38A An example is shown where the insulating layer 275 covers the top and side surfaces of the semiconductor layer. Conductive layers 272a and 272b are connected to the low-resistance region 281n through openings provided in the insulating layers 275 and 265.

[0703] On the other hand, Figure 38B In the transistor 259 shown, the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281 but not with the low-resistance region 281n. For example, by processing the insulating layer 275 using the conductive layer 273 as a mask, a transistor can be formed. Figure 38B The structure shown. In Figure 38B In this configuration, insulating layer 265 covers insulating layer 275 and conductive layer 273, and conductive layers 272a and 272b are respectively connected to low-resistance region 281n through openings in insulating layer 265. Furthermore, an insulating layer 268 covering the transistor may also be provided.

[0704] There are no particular limitations on the transistor structure included in the display device of this embodiment. For example, planar transistors, interleaved transistors, or anti-interleaved transistors can be used. Furthermore, the transistors can have a top-gate structure or a bottom-gate structure. Alternatively, gates can be disposed above and below the semiconductor layer forming the channel.

[0705] Transistors 252, 260, and 258 employ a structure in which a semiconductor layer forming a channel is sandwiched between two gates. Alternatively, the two gates can be connected together, and the transistor can be driven by supplying the same signal to both gates. Or, the threshold voltage of the transistor can be controlled by applying a potential to one of the two gates to control the threshold voltage and a potential to drive the transistor to the other.

[0706] There are no particular restrictions on the crystallinity of the semiconductor material used in the semiconductor layer of the transistor; amorphous semiconductors, single-crystal semiconductors, or crystalline semiconductors other than single-crystal semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in a portion thereof) can be used. When using single-crystal semiconductors or crystalline semiconductors, the degradation of transistor characteristics can be suppressed, so they are preferred.

[0707] The semiconductor layer of the transistor is preferably made of metal oxide (oxide semiconductor). That is, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that contains metal oxide in the channel formation region.

[0708] The bandgap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. By using a metal oxide with a wider bandgap, the off-state current of the OS transistor can be reduced.

[0709] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (M is selected from one or more of gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably selected from one or more of gallium, aluminum, yttrium, and tin, and more preferably gallium. Note that the metal oxide containing indium, M, and zinc is sometimes referred to below as In-M-Zn oxide.

[0710] When using In-M-Zn oxide as a metal oxide, the atomic ratio of In in the In-M-Zn oxide is preferably greater than or equal to the atomic ratio of M. Examples of atomic ratios of the metal elements in this In-M-Zn oxide include In:M:Zn = 1:1:1 or similar, In:M:Zn = 1:1:1.2 or similar, In:M:Zn = 2:1:3 or similar, In:M:Zn = 3:1:2 or similar, In:M:Zn = 4:2:3 or similar, In:M:Zn = 4:2:4.1 or similar, In:M:Zn = 5:1:3 or similar, In:M:Zn = 5:1:6 or similar, In:M:Zn = 5:1:7 or similar, In:M:Zn = 5:1:8 or similar, In:M:Zn = 6:1:6 or similar, In:M:Zn = 5:2:5 or similar, etc. Furthermore, "similar" composition includes a range of ±30% of the desired atomic ratio. By increasing the atomic ratio of indium in metal oxides, the on-state current or field-effect mobility of transistors can be improved.

[0711] For example, when the atomic ratio of the metallic elements is recorded as In:Ga:Zn = 4:2:3 or a similar composition, the content ratio of each element includes the following cases: when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. Furthermore, when the atomic ratio of the metallic elements is recorded as In:Ga:Zn = 5:1:6 or a similar composition, the content ratio of each element includes the following cases: when In is 5, Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. Moreover, when the atomic ratio of the metallic elements is recorded as In:Ga:Zn = 1:1:1 or a similar composition, the content ratio of each element includes the following cases: when In is 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0712] The atomic ratio of In in In-M-Zn oxides can also be less than the atomic ratio of M. Examples of such metallic atomic ratios in In-M-Zn oxides include In:M:Zn = 1:3:2 or similar, In:M:Zn = 1:3:3 or similar, In:M:Zn = 1:3:4 or similar, etc. By increasing the atomic ratio of M in the metal oxide, the band gap of the In-M-Zn oxide can be widened, thereby improving its tolerance to optical negative bias stress testing. Specifically, the change in threshold voltage or drift voltage (Vsh) measured in the NBTIS (Negative Bias Temperature Illumination Stress) test of the transistor can be reduced. Note that the drift voltage (Vsh) is defined as Vg at the intersection of the tangent line at the point where the slope of the drain current (Id) - gate voltage (Vg) curve of the transistor is greatest and the straight line of Id = 1pA.

[0713] Alternatively, the semiconductor layer of a transistor can also contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polycrystalline silicon, monocrystalline silicon, etc.).

[0714] In particular, low-temperature polysilicon has a high mobility and can be formed on a glass substrate, so it can be appropriately used in display devices. For example, transistors with low-temperature polysilicon as the semiconductor layer can be used as transistors 252 in driving circuits, and transistors with oxide semiconductor as the semiconductor layer can be used as transistors 260, 258, etc. in pixels.

[0715] Alternatively, the semiconductor layer of a transistor can also have a layered material used as a semiconductor. Layered materials are a general term for a group of materials with a layered crystalline structure. A layered crystalline structure is a structure formed by layers of covalent or ionic bonds stacked together by bonds weaker than covalent or ionic bonds, such as van der Waals bonds. Layered materials exhibit high conductivity per unit layer, that is, high two-dimensional conductivity. By using a material with high two-dimensional conductivity, which is used as a semiconductor, in the channel formation region, transistors with high on-state current can be provided.

[0716] Examples of the layered materials mentioned above include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogen elements (elements belonging to Group 16). Furthermore, examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides that can be used as semiconductor layers in transistors include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoSe2), molybdenum telluride (typically MoTe2), tungsten sulfide (typically WS2), tungsten selenide (typically WSe2), tungsten telluride (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), and zirconium selenide (typically ZrSe2).

[0717] The transistors included in circuit 464 and the transistors included in display unit 462 can have the same structure or different structures. The multiple transistors included in circuit 464 can have the same structure or two or more different structures. Similarly, the multiple transistors included in display unit 462 can have the same structure or two or more different structures.

[0718] Preferably, at least one of the insulating layers covering the transistor is made of a material that does not readily diffuse impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. By employing this structure, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0719] Inorganic insulating films are preferably used as insulating layers 261, 262, 265, 268, and 275. Examples of inorganic insulating films include silicon nitride films, silicon oxynitride films, silicon oxide films, silicon oxynitride films, aluminum oxide films, and aluminum nitride films. Additionally, hafnium oxide films, yttrium oxide films, zirconium oxide films, gallium oxide films, tantalum oxide films, magnesium oxide films, lanthanum oxide films, cerium oxide films, and neodymium oxide films can also be used. Furthermore, two or more of the aforementioned inorganic insulating films may be stacked.

[0720] Here, the barrier properties of organic insulating films are often lower than those of inorganic insulating films. Therefore, the organic insulating film preferably includes an opening near the end of the display device 400. This prevents impurities from entering through the organic insulating film from the end of the display device 400. Alternatively, the organic insulating film can be formed with its end located inside the end of the display device 400, so that the organic insulating film is not exposed at the end of the display device 400.

[0721] The insulating layer 264, which is used as the planarization layer, is preferably an organic insulating film. Materials suitable for use as organic insulating films include, for example, acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimide amide resins, silicone resins, benzocyclobutene resins, phenolic resins, and precursors of said resins.

[0722] Preferably, a light-shielding layer 417 is provided on the surface of the substrate 454 on the substrate 453 side. Furthermore, various optical components can be disposed on the outer side of the substrate 454. As optical components, polarizers, retardation plates, light diffusion layers (diffusion films, etc.), anti-reflection layers, and condensing films can be used. In addition, an antistatic film that inhibits dust adhesion, a water-repellent film that is not easily soiled, a hard coating film that inhibits damage during use, and an impact-absorbing layer can also be disposed on the outer side of the substrate 454.

[0723] exist Figure 38A The connection portion 278 is shown. In the connection portion 278, the common electrode 413 is electrically connected to the wiring. Figure 38A An example is shown where the wiring uses the same stacked structure as the pixel electrode.

[0724] Substrates 453 and 454 can be made of glass, quartz, ceramic, sapphire, resin, etc. Alternatively, single-crystal or polycrystalline semiconductor substrates made of materials such as silicon or silicon carbide, compound semiconductor substrates such as silicon-germanium, SOI substrates, etc., can also be used. Furthermore, substrates on which circuits including transistors are disposed can also be used as substrate 453. The substrate on the side from which light is extracted from the light-emitting element uses a material that allows the light to pass through. By using flexible materials for substrates 453 and 454, the flexibility of the display device can be improved. Polarizers can be used as substrate 453 or substrate 454.

[0725] When substrates 453 and 454 are made of flexible materials, the following materials can be used: polyester resins such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, polyethersulfone (PES) resins, polyamide resins (nylon, aromatic polyamides, etc.), polysiloxane resins, cycloolefin resins, polystyrene resins, polyamide-imide resins, polyurethane resins, polyvinyl chloride resins, polyvinylidene chloride resins, polypropylene resins, polytetrafluoroethylene (PTFE) resins, ABS resins, and cellulose nanofibers, etc. Alternatively, one or both of substrates 453 and 454 can be made of glass with a flexible thickness.

[0726] When a circular polarizer is superimposed on a display device, it is preferable to use a substrate with high optical isotropy as the substrate included in the display device. A substrate with high optical isotropy has lower birefringence (or, in other words, less birefringence).

[0727] The absolute value of the retardation value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0728] Examples of films with high optical isotropy include cellulose triacetate (also known as TAC) films, cyclic olefin polymer (COP) films, cyclic olefin copolymer (COC) films, and acrylic films.

[0729] When a thin film is used as a substrate, shape changes such as wrinkles may occur in the display panel due to water absorption by the film. Therefore, it is preferable to use a thin film with low water absorption rate as the substrate. For example, it is preferable to use a thin film with a water absorption rate of 1% or less, more preferably a thin film with a water absorption rate of 0.1% or less, and even more preferably a thin film with a water absorption rate of 0.01% or less.

[0730] As the adhesive layer, various curing adhesives can be used, including UV-curing adhesives, reactive curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. In particular, materials with low moisture permeability, such as epoxy resins, are preferred. Furthermore, two-component mixed resins can also be used. Additionally, adhesive sheets can also be used.

[0731] As the connecting layer 292, anisotropic conductive film (ACF) or anisotropic conductive paste (ACP) can be used.

[0732] Materials that can be used as conductive layers such as gates, sources, and drains of transistors, and various wiring and electrodes constituting display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys with said metals as the main component. Single layers or stacks of films containing these materials can be used.

[0733] Furthermore, as a transparent conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium-containing zinc oxide, or graphene, can be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or alloys containing such metallic materials, can be used. Alternatively, nitrides of the metallic material (e.g., titanium nitride) can also be used. Furthermore, when using metallic or alloy materials (or their nitrides), it is preferable to form them thin enough to be transparent. Furthermore, a multilayer film of the aforementioned materials can be used as a conductive layer. For example, using a multilayer film of an alloy of silver and magnesium with indium tin oxide, etc., can improve conductivity and is therefore preferred. The aforementioned materials can also be used as conductive layers constituting various wirings and electrodes of a display device, and as conductive layers included in light-emitting elements (conductive layers used as pixel electrodes or common electrodes).

[0734] Examples of insulating materials that can be used in various insulating layers include resins such as acrylic resin or epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, or aluminum oxide.

[0735] At least a portion of the structural examples shown in this embodiment and the corresponding drawings can be appropriately combined with other structural examples or drawings.

[0736] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0737] (Implementation Method 8)

[0738] In this embodiment, a metal oxide (also known as an oxide semiconductor) that can be used in the OS transistor described in the embodiment is explained.

[0739] The metal oxide used in the OS transistor preferably contains at least indium or zinc, more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, more preferably gallium.

[0740] Metal oxides can be formed by sputtering, chemical vapor deposition (CVD) such as metal-organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0741] The following example illustrates an oxide containing indium (In), gallium (Ga), and zinc (Zn). Note that oxides containing indium (In), gallium (Ga), and zinc (Zn) are sometimes referred to as In-Ga-Zn oxides.

[0742] <Classification of Crystal Structures>

[0743] Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystalline.

[0744] The crystalline structure of a film or substrate can be evaluated using X-ray diffraction (XRD). For example, the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) can be used for evaluation. Furthermore, the GIXD method is also known as the thin film method or the Seemann-Bohlin method. Hereinafter, the XRD spectrum obtained by GIXD measurement is sometimes simply referred to as the XRD spectrum.

[0745] For example, the peak shapes of the XRD spectrum of a quartz glass substrate are roughly symmetrical. On the other hand, the peak shapes of the XRD spectrum of an In-Ga-Zn oxide film with a crystalline structure are not symmetrical. Asymmetrical peak shapes in the XRD spectrum indicate the presence of crystals in the film or substrate. In other words, unless the XRD peak shapes are symmetrical, it cannot be said that the film or substrate is in an amorphous state.

[0746] Furthermore, the crystal structure of the film or substrate can be evaluated using diffraction patterns observed by nanobeam electron diffraction (NBED). For example, the observation of a halo pattern in the diffraction pattern of a quartz glass substrate confirms that the quartz glass is in an amorphous state. Conversely, a spot-like pattern without a halo is observed in the diffraction pattern of an In-Ga-Zn oxide film formed at room temperature. Therefore, it can be inferred that the In-Ga-Zn oxide formed at room temperature is in an intermediate state, neither single-crystal nor polycrystalline nor amorphous, and the conclusion that the In-Ga-Zn oxide film is amorphous cannot be drawn.

[0747] <<Structure of Oxide Semiconductors>>

[0748] Furthermore, when focusing on the structure of oxide semiconductors, the classification of oxide semiconductors sometimes differs from the aforementioned classification. For example, oxide semiconductors can be classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS and nc-OS. Furthermore, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, a-like OS (amorphous-like oxide semiconductor), and amorphous oxide semiconductors, etc.

[0749] Here, we will explain the details of CAAC-OS, nc-OS, and a-like OS.

[0750] [CAAC-OS]

[0751] CAAC-OS is an oxide semiconductor comprising multiple crystalline regions whose c-axis is oriented in a specific direction. This specific direction refers to the thickness direction of the CAAC-OS film, the normal direction of the formed surface of the CAAC-OS film, or the normal direction of the surface of the CAAC-OS film. Furthermore, a crystalline region is a region exhibiting a periodic atomic arrangement. Note that when atomic arrangement is considered as lattice arrangement, a crystalline region is also a region with a consistent lattice arrangement. Moreover, CAAC-OS has a region where multiple crystalline regions are connected in the ab-plane direction, and sometimes this region exhibits distortion. Distortion refers to the portion of the lattice arrangement direction that changes between regions with consistent lattice arrangement and other regions with consistent lattice arrangement in the region where multiple crystalline regions are connected. In other words, CAAC-OS refers to an oxide semiconductor with c-axis orientation but no obvious orientation in the ab-plane direction.

[0752] Furthermore, each of the plurality of crystalline regions is composed of one or more microcrystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of a single microcrystal, the maximum diameter of that crystalline region is less than 10 nm. Furthermore, when a crystalline region is composed of multiple microcrystals, the size of that crystalline region is sometimes around tens of nm.

[0753] Furthermore, in In-Ga-Zn oxides, CAAC-OS tends to have a layered crystal structure (also called a layered structure) with layers containing indium (In) and oxygen (hereinafter referred to as In layers) and layers containing gallium (Ga), zinc (Zn), and oxygen (hereinafter referred to as (Ga,Zn) layers). In addition, indium and gallium can substitute for each other. Therefore, sometimes the (Ga,Zn) layer contains indium. Also, sometimes the In layer contains gallium. Note that sometimes the In layer contains zinc. This layered structure is observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0754] For example, when performing structural analysis on CAAC-OS films using an XRD apparatus, peaks indicating c-axis orientation are detected at or near 2θ = 31° in out-of-plane XRD measurements using θ / 2θ scanning. Note that the position (2θ value) of the peak indicating c-axis orientation sometimes varies depending on the type and composition of the metallic elements constituting CAAC-OS.

[0755] Furthermore, for example, multiple bright spots (spots) were observed in the electron diffraction pattern of the CAAC-OS film. Additionally, when the spot of the incident electron beam passing through the sample (also known as the direct spot) is taken as the center of symmetry, one spot and other spots were observed at point-symmetrical positions.

[0756] When observing the crystalline region from the specific direction, although the lattice arrangement in the crystalline region is basically hexagonal, the unit lattice is not limited to regular hexagons; there are cases where it is non-regular hexagonal. Furthermore, in the aforementioned distortions, pentagonal, heptagonal, and other lattice arrangements are sometimes observed. Moreover, no clear grain boundary is observed near the distortion of CAAC-OS. That is, the distortion of the lattice arrangement inhibits the formation of grain boundaries. This may be because CAAC-OS can accommodate distortions due to the low density of oxygen atoms in the ab-plane direction or changes in the bonding distance between atoms caused by the substitution of metal atoms.

[0757] Furthermore, a crystalline structure with clearly defined grain boundaries is called a polycrystalline structure. Grain boundaries become recombination centers, trapping charge carriers and potentially leading to a decrease in transistor on-state current and field-effect mobility. Therefore, CAAC-OS without clearly defined grain boundaries is one of the crystalline oxides that provides an excellent crystalline structure for the semiconductor layer of a transistor. Note that a structure containing Zn is preferred for constructing CAAC-OS. For example, In-Zn oxides and In-Ga-Zn oxides are preferred because they can further suppress grain boundary formation compared to In oxides.

[0758] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, it can be said that in CAAC-OS, the reduction in electron mobility due to grain boundaries is less likely to occur. Furthermore, the crystallinity of oxide semiconductors can sometimes decrease due to the incorporation of impurities or the formation of defects; thus, CAAC-OS can be considered an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, oxide semiconductors containing CAAC-OS exhibit stable physical properties. Consequently, oxide semiconductors containing CAAC-OS possess high heat resistance and high reliability. Moreover, CAAC-OS is also stable against high temperatures (so-called thermal budget) in manufacturing processes. Therefore, by using CAAC-OS in OS transistors, the degrees of freedom in manufacturing processes can be increased.

[0759] [nc-OS]

[0760] In nc-OS, the atomic arrangement in tiny regions (e.g., regions larger than 1 nm and smaller than 10 nm, particularly regions larger than 1 nm and smaller than 3 nm) exhibits periodicity. In other words, nc-OS possesses tiny crystallinity. Furthermore, for example, these tiny crystallinity sizes are between 1 nm and 10 nm, particularly between 1 nm and 3 nm; these tiny crystallinity sizes are referred to as nanocrystals. Moreover, no regularity in crystallization orientation is observed between different nanocrystals in nc-OS. Therefore, no orientation is observed in the overall film. Thus, sometimes nc-OS is indistinguishable from a-like OS or amorphous oxide semiconductors in certain analytical methods. For example, when performing structural analysis on nc-OS films using an XRD apparatus, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Furthermore, when performing electron diffraction (also known as selected area electron diffraction) on nc-OS films using an electron beam with a beam diameter larger than that of nanocrystals (e.g., larger than 50 nm), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also known as nanobeam electron diffraction) is performed on nc-OS films using an electron beam whose beam diameter is close to or smaller than the size of nanocrystals (e.g., more than 1 nm and less than 30 nm), sometimes an electron diffraction pattern is observed in a ring-shaped region centered on a direct spot.

[0761] [a-like OS]

[0762] a-like OS is an oxide semiconductor with a structure intermediate between nc-OS and amorphous oxide semiconductors. a-like OS contains voids or low-density regions. That is, a-like OS has lower crystallinity than nc-OS and CAAC-OS. Furthermore, the hydrogen concentration in a-like OS films is higher than that in nc-OS and CAAC-OS films.

[0763] <<The Structure of Oxide Semiconductors>>

[0764] Next, the details of the CAC-OS will be explained. Furthermore, CAC-OS is related to material composition.

[0765] [CAC-OS]

[0766] CAC-OS, for example, refers to a composition in which elements are non-uniformly distributed within a metal oxide, wherein the size of the material containing the non-uniformly distributed elements is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or approximately. Note that below, the state in which one or more metal elements are non-uniformly distributed within a metal oxide and the regions containing those metal elements are mixed is also referred to as mosaic or patch-like, where the size of the region is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or approximately.

[0767] Furthermore, CAC-OS refers to a structure in which the material is divided into a first region and a second region, forming a mosaic-like structure, with the first region distributed throughout the film (hereinafter also referred to as cloud-like). In other words, CAC-OS refers to a composite metal oxide having a structure that combines the first and second regions.

[0768] Here, each of the atomic ratios of In, Ga, and Zn relative to the metal elements constituting the CAC-OS in In-Ga-Zn oxide is denoted as [In], [Ga], and [Zn]. For example, in the CAC-OS of In-Ga-Zn oxide, a first region is a region where [In] is greater than [In] in the composition of the CAC-OS film. Furthermore, a second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film. Alternatively, for example, a first region is a region where [In] is greater than [In] in the second region and [Ga] is less than [Ga] in the second region. Furthermore, a second region is a region where [Ga] is greater than [Ga] in the first region and [In] is less than [In] in the first region.

[0769] Specifically, the first region is a region whose main component is indium oxide or indium zinc oxide. Furthermore, the second region is a region whose main component is gallium oxide or gallium zinc oxide. In other words, the first region can be referred to as a region whose main component is In. Furthermore, the second region can be referred to as a region whose main component is Ga.

[0770] Note that sometimes the clear boundary between the first region and the second region is not observable.

[0771] Furthermore, CAC-OS in In-Ga-Zn oxides refers to a structure in which regions dominated by Ga and regions dominated by In are irregularly arranged in a mosaic pattern within a material containing In, Ga, Zn, and O. Therefore, it can be inferred that CAC-OS has a structure with uneven distribution of metallic elements.

[0772] CAC-OS can be formed, for example, by sputtering without heating the substrate. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gases, and nitrogen gases can be used as the deposition gas. Furthermore, the lower the oxygen gas flow rate in the total flow rate of the deposition gas during deposition, the better. For example, the oxygen gas flow rate in the total flow rate of the deposition gas during deposition should be 0% or more and less than 30%, preferably 0% or more and less than 10%.

[0773] For example, in CAC-OS of In-Ga-Zn oxide, based on the EDX-mapping image obtained by Energy Dispersive X-ray spectroscopy (EDX), a structure with an unevenly distributed mixture of regions with In as the main component (first region) and regions with Ga as the main component (second region) can be identified.

[0774] Here, the first region has higher conductivity than the second region. That is, when charge carriers flow through the first region, it exhibits the conductivity of a metal oxide. Therefore, when the first region is distributed in a cloud-like manner within the metal oxide, a high field-effect mobility (μ) can be achieved.

[0775] On the other hand, the second region has higher insulation properties than the first region. That is, when the second region is distributed in a metal oxide, leakage current can be suppressed.

[0776] When CAC-OS is used in transistors, the complementary effect of conductivity arising from the first region and insulation arising from the second region enables CAC-OS to possess switching functionality (the function of controlling on / off). In other words, a portion of the CAC-OS material exhibits conductivity while another portion exhibits insulation, resulting in a semiconductor function within the material as a whole. By separating the conductive and insulating functions, each function can be maximized. Therefore, by using CAC-OS in transistors, a large on-state current (If) can be achieved. on It has high field-effect mobility (μ) and good switching performance.

[0777] Furthermore, transistors using CAC-OS exhibit high reliability. Therefore, the reliability of electronic devices employing CAC-OS can be improved.

[0778] Oxide semiconductors possess various structures and properties. In one embodiment of the present invention, the oxide semiconductor may also include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0779] Transistors with oxide semiconductors

[0780] Next, the case of using the oxide semiconductor in a transistor will be described.

[0781] By using the oxide semiconductor in transistors, transistors with high field-effect mobility can be realized. Furthermore, transistors with high reliability can be achieved.

[0782] Oxide semiconductors with low carrier concentrations are preferably used in transistors. For example, the carrier concentration in an oxide semiconductor is 1 × 10⁻⁶. 17 cm -3 The following is preferred: 1×10 15 cm -3 Hereinafter, 1×10 is more preferred. 13 cm -3 Hereinafter, 1×10 is further preferred. 11 cm -3 Below, a further preference is given to values ​​below 1×10. 10 cm -3 And 1×10 -9 cm -3 The above applies. When aiming to reduce the carrier concentration in an oxide semiconductor film, the impurity concentration in the oxide semiconductor film can be reduced to decrease the defect state density, thereby reducing the carrier concentration. In this specification, a state with both low impurity concentration and low defect state density is referred to as high-purity intrinsic or substantially high-purity intrinsic. Furthermore, oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0783] Because high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor films have a low defect state density, they may have a low trap state density.

[0784] Furthermore, the charge trapped in the trap state of an oxide semiconductor takes a relatively long time to dissipate, sometimes acting like a fixed charge. Therefore, the electrical characteristics of transistors forming channel formation regions in oxide semiconductors with high trap state density are sometimes unstable.

[0785] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of the transistor. To further reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon. Note that impurities in an oxide semiconductor refer, for example, to elements other than the main components constituting the oxide semiconductor. For example, elements with a concentration less than 0.1 atomic% can be considered impurities.

[0786] <Impurities>

[0787] Here, we will explain the effects of various impurities in oxide semiconductors.

[0788] When an oxide semiconductor contains silicon or carbon, one of Group 14 elements, defect states are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in or near the interface with the oxide semiconductor (the concentration measured by secondary ion mass spectrometry (SIMS)) is set to 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferred: 2×10 17 atoms / cm 3 the following.

[0789] Furthermore, when oxide semiconductors contain alkali metals or alkaline earth metals, defect states sometimes form, resulting in charge carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to have always-on characteristics. Thus, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor, as measured by SIMS, is set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferred: 2×10 16 atoms / cm 3 the following.

[0790] When nitrogen is included in oxide semiconductors, electrons are readily generated as charge carriers, increasing the charge carrier concentration and resulting in n-type characteristics. Consequently, transistors using nitrogen-containing oxide semiconductors tend to exhibit always-on characteristics. Alternatively, nitrogen inclusion in oxide semiconductors can sometimes lead to trapped states. This can result in unstable electrical characteristics in the transistor. Therefore, the nitrogen concentration in the oxide semiconductor, measured using SIMS, is set to be below 5 × 10⁻⁶. 19 atoms / cm 3 Preferably 5×10 18 atoms / cm 3 Hereinafter, 1×10 is more preferred. 18 atoms / cm 3 The following is a further preferred option: 5×10 17atoms / cm 3 the following. [079...

Claims

1. An electronic device comprising: a display portion, wherein the display portion includes a plurality of light emitting elements and a plurality of light receiving elements, the light receiving elements receive reflected light which is emitted from the light emitting elements and is reflected by an object, the light receiving elements receive light during a first detection period, during the first detection period, the light emitting elements emit light at a first luminance, the light receiving elements receive light during a second detection period which is shorter than the first detection period, and during the second detection period, the light emitting elements emit light at a second luminance which is higher than the first luminance.

2. The electronic device according to claim 1, wherein the light receiving elements receive light during the first detection period when the illuminance of ambient light is a first value or less, and receive light during the second detection period when the illuminance of the ambient light is higher than the first value.

3. An electronic device comprising: a display portion, wherein the display portion includes a plurality of pixel circuits and a plurality of second elements, the pixel circuits include first elements and current control portions, the first elements include first electrodes and second electrodes and first light emitting layers between the first electrodes and the second electrodes, the current control portions include first terminals and second terminals connected to the second electrodes, the first electrodes of the first elements included in the plurality of pixel circuits are connected to each other, the first terminals of the current control portions included in the plurality of pixel circuits are connected to each other, the second elements receive reflected light which is emitted from the first elements and is reflected by an object, the second elements receive light during a first detection period when the illuminance of ambient light is a first value or less, during the first detection period, the first elements emit light at a first luminance, when the illuminance of the ambient light is higher than the first value, the first elements emit light at a second luminance which is higher than the first luminance, and the second elements receive light during a second detection period which is shorter than the first detection period, during the second detection period, the first elements emit light at the second luminance, and the potential difference between the first terminal and the first electrode when the first elements emit light at the second luminance is larger than the potential difference between the first terminal and the first electrode when the first elements emit light at the first luminance.

4. The electronic device according to claim 3, wherein the current control portions include first transistors, one of the source and the drain of the first transistors is connected to the first terminal, and the other of the source and the drain of the first transistors is connected to the second terminal.

5. The electronic device according to claim 3, wherein the current control portions include first transistors, and when the first elements emit light, one of the source and the drain of the first transistors is supplied with a potential corresponding to the first terminal, and the current of the first elements is controlled by the first transistors.

6. The electronic device according to any one of claims 1 to 5, wherein the product of the first luminance and the length of the first detection period is 0.8 times or more and 1.2 times or less of the product of the second luminance and the length of the second detection period.

7. The electronic device according to any one of claims 1 to 5, The subject being photographed is the first finger that touches or approaches the surface of the display unit. Furthermore, the electronic device has the function of acquiring the fingerprint information of the first finger.

8. The electronic device according to any one of claims 1 to 5, further comprising: Storage Department The subject being photographed is the first finger that touches or approaches the surface of the display unit. The storage unit contains fingerprint information of the second finger. Furthermore, the electronic device has the function of acquiring the fingerprint information of the first finger and comparing the fingerprint information of the first finger with the fingerprint information of the second finger.

9. The electronic device according to claim 3, The second element includes a third electrode and a fourth electrode, as well as an active layer located between the third electrode and the fourth electrode. The third electrodes included in the plurality of second elements are connected to each other. Furthermore, the third electrode of each of the plurality of second elements is supplied with the same potential as the first electrode of each of the plurality of pixel circuits.

10. The electronic device according to claim 9, The second element includes a second light-emitting layer. Furthermore, the second light-emitting layer is located between the third electrode and the fourth electrode.

11. The electronic device according to claim 10, The first element has the function of emitting light selected from one of the three colors: red, green, and blue. Furthermore, the second element has the function of emitting light selected from another color among the three colors and receiving visible light.

12. The electronic device according to claim 10, The first element has the function of emitting light selected from one of the three colors: red, green, and blue. Furthermore, the second element has the function of emitting light selected from another color among the three colors and receiving infrared light.

13. The electronic device according to claim 3, The potential of the first electrode when emitting light at the second brightness is lower than the potential of the first electrode when emitting light at the first brightness.

14. The electronic device according to claim 3, The potential of the first terminal when emitting light at the second brightness is higher than the potential of the first terminal when emitting light at the first brightness.

15. An electronic device comprising: Display section; as well as Camera, The display unit includes multiple pixel circuits and multiple light-receiving elements. The pixel circuit includes a light-emitting element and a current control unit. In the first working mode, The light-receiving element receives reflected light emitted from the light-emitting element and reflected by the subject. When the ambient light illuminance is below a first value, the light-emitting element emits light at a first brightness, and the light-receiving element receives light during the first detection period. When the ambient light illuminance is higher than the first value, the light-emitting element emits light at a second brightness higher than the first brightness, and the light-receiving element receives light during a second detection period shorter than the first detection period. In the second working mode, The light-emitting element emits light at a third brightness level. The third brightness level is used as a flash when taking pictures with the camera. Furthermore, the third brightness is lower than the second brightness.

16. The electronic equipment according to claim 15, The light-emitting element includes a first electrode, a second electrode, and a light-emitting layer located between the first electrode and the second electrode. The current control unit includes a first terminal and a second terminal connected to the second electrode. The first electrodes of each of the light-emitting elements included in the plurality of pixel circuits are connected to each other. The first terminals of each current control unit included in the plurality of pixel circuits are connected to each other. When emitting light at the second brightness, the potential difference between the first terminal and the first electrode is greater than the potential difference between the first terminal and the first electrode when emitting light at the first brightness. Furthermore, the potential difference between the first terminal and the first electrode when emitting light at the second brightness is greater than the potential difference between the first terminal and the first electrode when emitting light at the third brightness.

17. A program that causes an electronic device to execute, wherein, The electronic device includes a display unit with display and detection functions, and a storage unit. The procedure includes the following steps: First step, configuring a first finger in a manner that touches or approaches the surface of the display unit; The second step involves displaying a first area of ​​a first image at a first brightness on the display unit, using the first area of ​​the first image as a light source to perform detection during a first detection period, thereby obtaining a first camera image of the first finger. The third step is to choose whether to use the first camera image; In the fourth step, if the third step does not use a camera image, the first area of ​​the first image is displayed on the display unit at a second brightness higher than the first brightness, and the first area of ​​the first image is used as a light source to perform detection in a second detection period shorter than the first detection period, thereby obtaining a second camera image of the first finger. The fifth step is to choose whether to use the second camera image; The sixth step involves extracting the fingerprint information of the first finger from the first camera image if the first camera image is used in the third step, and extracting the fingerprint information of the first finger from the second camera image if the second camera image is used in the fifth step; and The seventh step involves comparing the fingerprint information of the first finger extracted in the sixth step with the fingerprint information of the second finger contained in the storage unit. Furthermore, if the first camera image is used in the third step, the fourth and fifth steps are skipped and the sixth step is performed.

18. The procedure according to claim 17, The product of the first brightness and the first detection period duration is more than 0.8 times and less than 1.2 times the product of the second brightness and the second detection period duration.

19. An electronic device comprising: Display section; Storage Department; as well as Illuminance sensor, The display unit includes multiple pixel circuits and multiple light-receiving elements. The pixel circuit includes a light-emitting element and a current control unit. The light-receiving element receives reflected light emitted from the light-emitting element and reflected by the subject. The storage unit contains first biological information. The illuminance sensor detects the illuminance corresponding to the ambient light received by the display unit. When the illuminance detected by the illuminance sensor is below a first value, the light-receiving element receives light during the first detection period. During the first detection period, the light-emitting element emits light at a first brightness. When the illuminance detected by the illuminance sensor is higher than the first value, the light-receiving element receives light during a second detection period shorter than the first detection period. During the second detection period, the light-emitting element emits light at a second brightness, which is higher than the first brightness. The electronic device has the function of acquiring processed content based on a verification code and the function of acquiring second biometric information and approving the processed content based on a comparison with the first biometric information. The verification code is obtained by using an image containing the verification code as the first subject and detecting reflected light from the first subject by the plurality of light-receiving elements. Furthermore, the second biological information is obtained by using a finger or palm as a second subject and detecting reflected light from the second subject using the plurality of light-receiving elements.

20. The electronic device according to claim 19, The light-emitting element includes a first electrode and a second electrode, and a first light-emitting layer located between the first electrode and the second electrode. The current control unit includes a first terminal and a second terminal connected to the second electrode. The first electrodes of each of the light-emitting elements included in the plurality of pixel circuits are connected to each other. The first terminals of each current control unit included in the plurality of pixel circuits are connected to each other. Furthermore, the potential difference between the first terminal and the first electrode when emitting light at the second brightness is greater than the potential difference between the first terminal and the first electrode when emitting light at the first brightness.

21. The electronic device according to claim 20, The current control unit includes a first transistor. Furthermore, one of the source and drain of the first transistor is connected to the first terminal, and the other of the source and drain of the first transistor is connected to the second terminal.

22. The electronic device according to claim 20, The current control unit includes a first transistor. Furthermore, when the light-emitting element emits light, one of the source and drain of the first transistor is supplied with a potential corresponding to the first terminal, and the current of the light-emitting element is controlled by the first transistor.

23. The electronic device according to any one of claims 19 to 22, The verification code mentioned therein is a barcode or a QR code.

24. The electronic device according to any one of claims 19 to 22, The product of the first brightness and the first detection period duration is more than 0.8 times and less than 1.2 times the product of the second brightness and the second detection period duration.

25. The electronic device according to claim 20, The light-receiving element includes a third electrode and a fourth electrode, and an active layer located between the third electrode and the fourth electrode. The third electrodes included in the light-receiving element are connected to each other. Furthermore, the third electrode of each of the light-receiving elements and the first electrode of each of the light-emitting elements of the plurality of pixel circuits are supplied with the same potential.

26. The electronic device according to claim 25, The light-receiving element includes a second light-emitting layer. Furthermore, the second light-emitting layer is located between the third electrode and the fourth electrode.

27. The electronic device according to claim 26, The light-emitting element described herein has the function of emitting light selected from one of the three colors: red, green, and blue. Furthermore, the light-receiving element has the function of emitting light selected from another color among the three colors and receiving visible light.

28. The electronic device according to claim 26, The light-emitting element described herein has the function of emitting light selected from one of the three colors: red, green, and blue. Furthermore, the light-receiving element has the function of emitting light selected from another color among the three colors and receiving infrared light.

29. The electronic device according to claim 20, The potential of the first electrode when emitting light at the second brightness is lower than the potential of the first electrode when emitting light at the first brightness.

30. The electronic device according to claim 20, The potential of the first terminal when emitting light at the second brightness is higher than the potential of the first terminal when emitting light at the first brightness.

31. A program that causes an electronic device to execute. wherein The electronic device includes a display unit with multiple light-receiving elements and a storage unit. The program includes the following steps: First step, taking an image containing a verification code as a first subject, displaying the first image at a first brightness on the display unit as a light source, and the plurality of light-receiving elements detecting the light source reflected by the first subject during a first detection period; The second step is to use the reflected light detected in the first step to obtain a camera image of the verification code; The third step is to display the first processing content based on the verification code on the display unit; The fourth step is to position the first finger in a manner that touches or approaches the display unit; In the fifth step, the first finger is used as the second subject, and the second image is displayed at a second brightness on the display unit as the second light source. The plurality of light-receiving elements detect the reflected light from the second light source that is reflected by the second subject during the second detection period. The sixth step is to obtain a camera image of the first finger using the reflected light detected in the fifth step; The seventh step is to obtain the fingerprint information of the first finger from the camera image of the first finger and compare it with the fingerprint information of the second finger contained in the storage unit. as well as The eighth step involves confirming that the fingerprint information of the first finger matches the fingerprint information of the second finger through the comparison, and then proceeding with the first processing step. If the image quality of the camera image obtained in the sixth step is verified and it is determined that another camera image needs to be obtained, then the fifth and sixth steps are performed again. Furthermore, during the second fifth step, the second brightness is higher and the second detection period is shorter compared to the first step.

32. The procedure according to claim 31, The product of the first brightness and the first detection period duration is more than 0.8 times and less than 1.2 times the product of the second brightness and the second detection period duration.

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