Silicon-carbon negative electrode material with cavity buffer structure and preparation method of silicon-carbon negative electrode material
By using molecular self-assembly and polydopamine sacrificial layer preparation methods, a tightly connected carbon nanotube-silicon core and carbon shell structure is formed, which solves the problems of environmental protection and poor conductive network connection in the preparation process of existing silicon-carbon materials, and improves the cycling stability and transport efficiency of the material.
Patent Information
- Application Number
- CN202610722444.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-05-25
- Publication Date
- 2026-07-24
AI Technical Summary
Existing cavity buffer structure silicon-carbon materials have problems such as poor environmental performance, insufficient buffer space, and only partial connection of the core and shell conductive network during the preparation process, which leads to limited ion and electron transport and poor cycle stability.
A silicon-carbon anode material with a cavity buffer structure was prepared by combining nano-silicon with quaternary ammonium salt and carboxylated carbon nanotubes using molecular self-assembly technology and a polydopamine sacrificial layer. The sacrificial layer was decomposed by alkaline treatment to form tightly connected carbon nanotubes with silicon core and carbon shell, thereby improving the electron and ion transport rate.
An environmentally friendly and efficient cavity buffer structure was achieved, which enhanced the material's cycle stability and electronic and ion conduction capabilities, thereby improving the material's overall performance.