Method for producing an optoelectronic component

By selectively growing vertical nanostructures on a substrate to form an electron transport layer, selectively etching and epitaxially growing the active region, the low efficiency and cracking problems of planar UV LEDs are solved, and the UV photon emission efficiency and mechanical strength are improved.

CN122460244APending Publication Date: 2026-07-24COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES +2
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Patent Information

Application Number
CN202480081209.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-19
Filing Date
2024-12-03
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

In existing technologies, planar UV LEDs have low efficiency. Structural defects and point defects lead to a decrease in internal quantum efficiency. Furthermore, gallium nitride (GaN) cores absorb UV photons, and the epitaxial growth of aluminum gallium nitride (AlGaN) along nanowires generates tensile elastic stress, resulting in cracks.

Method used

By forming selective growth regions on a substrate, vertical nanostructures are epitaxially grown, and an electron transport layer is formed around them. Selective etching exposes part of the nanostructure, forming an active region and a hole transport layer, thereby reducing UV photon absorption and elastic stress.

Benefits of technology

It improves UV photon emission efficiency, reduces crack formation, and enhances the mechanical strength and optoelectronic performance of the device.

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Abstract

The invention relates to a method for producing an optoelectronic component having a vertical nanostructure, comprising an active region (ZA), which is designed to emit ultraviolet photons by radiative recombination of electron-hole pairs or to generate electron-hole pairs from absorbed ultraviolet photons; the vertical nanostructures are made of n-type doped gallium nitride (GaN) and are formed by epitaxial growth on a selective epitaxial region (SAG), said method comprising a step of selectively etching the vertical nanostructures, which step retains a remaining portion (30) of each vertical nanostructure, the remaining portion is adapted to maintain the mechanical strength of the side region (41) of the electron transport layer made of an aluminum (Al)-containing III-n alloy.
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