Microvia processing method and system based on cooperation of magnetic field and double laser beams

Abstract

The application discloses a micro via hole processing method and system based on cooperation of a magnetic field and double laser beams, and the micro via hole processing method comprises the following steps: first, a first laser is emitted to act on the inside of a transparent material, and a local high-density carrier and a plasma region are generated through multiphoton ionization or tunneling ionization; then, a second laser with a longer wavelength and a wider pulse width is introduced to irradiate the plasma region, so that the selective energy deposition of the second laser is realized; meanwhile, a Lorentz force is exerted on free electrons in the inside of the transparent material through an external magnetic field, the motion trajectory of the free electrons and the expansion direction of the plasma are modulated, the spatial distribution of the plasma and the energy deposition path of the second laser are actively changed, and complex spatial special microstructures such as inclined micro-holes, arc-shaped channels and three-dimensional interconnected structures are processed.

Description

Technical Field

[0001] This invention relates to the field of laser processing, and in particular to a method and system for processing micro-holes based on the synergy of magnetic field and dual laser beams. Background Technology

[0002] Transparent hard materials (such as glass, sapphire, and diamond) have significant applications in microelectronic packaging, optical device manufacturing, and biochip fabrication due to their high hardness, high chemical stability, and wide optical transmittance. With the development of micro / nano manufacturing technology, the demand for processing three-dimensional microstructures and irregularly shaped micropores within transparent materials is increasing, especially requiring precise control over pore size, orientation, and morphology. However, these transparent hard materials typically exhibit weak absorption of infrared lasers, resulting in low processing efficiency and difficulty in achieving complex three-dimensional structures.

[0003] Currently, femtosecond laser processing technology has been applied to the micropore and internal modification of transparent materials. Femtosecond lasers induce localized plasma within transparent materials through multiphoton absorption, utilizing the high temperature and pressure of the plasma to remove material or modify its structure, thereby forming micropores. Therefore, in existing technologies, combining femtosecond lasers with infrared lasers, where the femtosecond laser induces plasma, and a second laser beam injects additional energy into the plasma to increase its temperature and pressure, can improve processing efficiency.

[0004] However, existing methods mainly rely on optical path control or mechanical tilt angle to achieve aperture shape adjustment, which makes it difficult to achieve precise and controllable adjustment of aperture diameter, orientation and morphology. Summary of the Invention

[0005] The purpose of this invention is to propose a micro-hole processing method and system based on the synergy of magnetic field and dual laser beams, so as to solve the problem that the existing hole shape adjustment methods are singular and it is difficult to achieve precise and controllable adjustment of hole diameter, direction and morphology.

[0006] To achieve this objective, the present invention adopts the following technical solution: This invention provides a method for fabricating micro-vias based on the synergy of a magnetic field and dual laser beams, comprising the following steps: S1: Clean and dry the substrate and fix it on the processing plane; S2: The first laser is emitted, focused, and applied to the processing substrate, causing the processing substrate to generate a local high-density carrier and plasma region; the first laser is a short-pulse laser; S3: Emits a second laser to illuminate the area irradiated by the first laser; the second laser is an infrared laser. S4: By applying an external magnetic field to the outer periphery of the substrate, the trajectory of free electrons is changed, thereby altering the energy deposition distribution and the morphology of the processing area, micro-vias can be fabricated on the substrate.

[0007] In the micro-hole processing method based on the synergy of magnetic field and dual laser beams, the magnetic field strength in step S4 is 0.01 to 10 T.

[0008] In the micro-via fabrication method based on the synergy of magnetic field and dual laser beams, the interval between the first laser and the second laser in steps S2 and S3 is 0 to 10 ns.

[0009] In the micro-via fabrication method based on magnetic field and dual laser beam synergy, in step S2, the short-pulse laser includes a femtosecond laser or a picosecond laser, the wavelength range of the first laser is 200-1100nm, and the pulse width of the first laser is 10fs-10ps.

[0010] In the micro-via fabrication method based on the synergy of magnetic field and dual laser beams, in step S3, the laser wavelength of the second laser is 800-3000 nm, and the pulse width of the second laser is 1-100 ns.

[0011] In the micro-via fabrication method based on magnetic field and dual laser beam synergy, the cleaning step in step S1 includes the following steps: immersing the substrate in acetone solution and ultrasonically cleaning for 8-11 minutes; then immersing the substrate in anhydrous ethanol solution and ultrasonically cleaning for 8-11 minutes; then immersing the substrate in deionized water and ultrasonically cleaning for 8-11 minutes.

[0012] In the micro-via fabrication method based on the synergy of magnetic field and dual laser beams, in step S1, the fabrication substrate includes one of glass, sapphire, and silicon carbide.

[0013] The present invention also provides a micro-via machining system based on the coordination of magnetic field and dual laser beams, for realizing the above-mentioned micro-via machining method based on the coordination of magnetic field and dual laser beams, including a first laser source, a second laser source, an optical path coupling and focusing device, a time delay device, a magnetic field generating device, and an XYZ axis moving platform; The first laser source is used to generate a first laser; the second laser source is used to generate a second laser; the XYZ axis moving platform is provided with a substrate processing area, the substrate processing area is used to place the processing substrate, the magnetic field generating device is disposed on the outer periphery of the substrate processing area, the magnetic field generating device is used to apply a magnetic field to the processing substrate; the XYZ axis moving platform is used to drive the processing substrate and the magnetic field generating device to move along the X-axis, Y-axis or Z-axis; The optical path coupling and focusing device is provided with a first laser inlet, a second laser inlet, and a laser outlet. The emitting end of the first laser source is aligned with the first laser inlet, the emitting end of the second laser source is aligned with the input end of the time delay device, the output end of the time delay device is aligned with the second laser inlet, and the laser outlet is located above the substrate processing area.

[0014] In the micro-via processing system based on the synergy of magnetic field and dual laser beams, the optical path coupling and focusing device includes a beam combiner, a first refracting mirror, a second refracting mirror, and a focusing lens; The beam combiner is disposed at the emitting end of the first laser source; the first refractor is disposed at the emitting end of the second laser source; the second refractor is disposed above the focusing lens, and the second refractor is located on one side of the output end of the beam combiner; the focusing lens is disposed above the substrate processing area; the first refractor is used to refract the second laser to the beam combiner, the beam combiner is used to coaxially combine the first laser and the second laser, so that the two laser beams are refracted along the same optical path through the second refractor into the focusing lens, and the focusing lens is used to focus the combined first laser and the second laser onto the processing substrate.

[0015] One of the technical solutions in this invention can have the following beneficial effects: The described micro-hole fabrication method applies a Lorentz force to the free electrons inside the transparent material using an external magnetic field, modulating the trajectory of the free electrons and the direction of plasma expansion. This actively alters the spatial distribution of the plasma and the energy deposition path of the second laser, thereby achieving controllable adjustment of the aperture, depth, and shape. Under the same laser parameters, various morphologies such as circles, ellipses, and asymmetric cross-sections can be obtained simply by changing the direction and / or intensity of the magnetic field, without the need to replace optical components or adjust the workpiece tilt angle. This method offers high degree of freedom and eliminates optical aberrations. By real-time switching of the magnetic field direction and coordinated arrangement with the laser scanning path, the plasma offset direction can be gradually changed along the hole depth direction to fabricate complex spatial irregular microstructures such as tilted microholes, arc-shaped channels, and three-dimensional interconnected structures. The constraint effect of the magnetic field on the plasma expansion process suppresses random fluctuations in the inter-pulse distribution, significantly improving processing consistency and repeatability. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the processing system in one embodiment of the present invention; Figure 2 These are schematic diagrams of aperture shapes corresponding to different magnetic field directions, where... Figure 2 (a) is a fine straight hole processed by a magnetic field parallel to the laser propagation direction. Figure 2 (b) is an inclined hole processed by a magnetic field perpendicular to the laser propagation direction. Figure 2 (c) is an inclined hole processed by a gradient magnetic field perpendicular to the laser propagation direction. Figure 2(d) is an inclined hole processed by a dynamically changing magnetic field perpendicular to the laser propagation direction; Figure 3 This is a schematic diagram of the micro-hole processing in one embodiment of the present invention; In the attached diagram: 1. First laser source; 2. Second laser source; 4. Time delay device; 5. Magnetic field generator; 6. XYZ axis moving platform; 7. Processing substrate; First laser 11, second laser 21; beam combiner 31, first refractor 32, second refractor 33, focusing lens 34; fine straight aperture 71, inclined aperture 72, curved aperture 73, S-shaped aperture 74. Detailed Implementation

[0017] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0018] In the description of this invention, it should be understood that the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, features defined with "first" and "second" may explicitly or implicitly include one or more of these features, used to distinguish and describe features, without any order or emphasis.

[0019] In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0020] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0021] Please refer to Figures 1-3 This invention provides a method for fabricating micro-vias based on the synergy of a magnetic field and dual laser beams, comprising the following steps: S1: Clean and dry the substrate and fix it on the processing plane; S2: The first laser is emitted, focused, and applied to the processing substrate, causing the processing substrate to generate a local high-density carrier and plasma region; the first laser is a short-pulse laser; S3: Emits a second laser to illuminate the area irradiated by the first laser; the second laser is an infrared laser. S4: By applying an external magnetic field to the outer periphery of the substrate, the trajectory of free electrons is changed, thereby altering the energy deposition distribution and the morphology of the processing area, micro-vias can be fabricated on the substrate.

[0022] In the described micro-via fabrication method, a first laser, after being focused, acts on the interior of a transparent material, generating a localized high-density carrier and plasma region through multiphoton ionization or tunneling ionization. A second laser with a longer wavelength and wider pulse width is then introduced to irradiate this plasma region. Because the first laser forms a high-density free electron and plasma region within the substrate, this region significantly enhances its absorption capacity of free carriers from the second infrared laser, thereby improving the energy coupling efficiency of the second laser within the local area and achieving selective energy deposition.

[0023] By employing short-pulse laser-induced internal plasma and infrared laser selective deposition, the two work together to form a positive feedback enhancement mechanism in which "the first laser-induced plasma provides an efficient absorption medium for the second laser, and the second laser selectively enhances the plasma energy," thus overcoming the problems of weak infrared laser absorption and low processing efficiency of transparent hard materials.

[0024] The described micro-hole fabrication method applies a Lorentz force to the free electrons inside the transparent material using an external magnetic field, modulating the trajectory of the free electrons and the direction of plasma expansion. This actively alters the spatial distribution of the plasma and the energy deposition path of the second laser, thereby achieving controllable adjustment of the aperture, depth, and shape. Under the same laser parameters, various morphologies such as circles, ellipses, and asymmetric cross-sections can be obtained simply by changing the direction and / or intensity of the magnetic field, without the need to replace optical components or adjust the workpiece tilt angle. This method offers high degree of freedom and eliminates optical aberrations. By real-time switching of the magnetic field direction and coordinated arrangement with the laser scanning path, the plasma offset direction can be gradually changed along the hole depth direction to fabricate complex spatial irregular microstructures such as tilted microholes, arc-shaped channels, and three-dimensional interconnected structures. The constraint effect of the magnetic field on the plasma expansion process suppresses random fluctuations in the inter-pulse distribution, significantly improving processing consistency and repeatability.

[0025] Specifically, in step S4, the magnetic field strength is 0.01 to 10 T.

[0026] By adjusting the direction and intensity of the magnetic field, in conjunction with the laser scanning path, asymmetric holes, tilted holes, or curved holes can be fabricated. Specifically, a magnetic field parallel to the laser propagation direction enhances the axial constraint of the plasma to form high aspect ratio microholes; a magnetic field perpendicular to the laser propagation direction controls the lateral deflection of the plasma to form tilted holes; a gradient magnetic field is used to form curved holes; and a dynamically changing magnetic field is used to form continuous curved or curved hole structures. The magnetic field strength controls the deflection angle of the plasma.

[0027] Specifically, in steps S2 and S3, the interval between the first laser and the second laser is 0 to 10 ns.

[0028] In some embodiments of the present invention, the first laser and the second laser act synchronously on the processing substrate. In other embodiments, a predetermined time delay is formed between the first laser and the second laser.

[0029] Both timing modes can achieve effective control of plasma by magnetic field. The physical mechanism is as follows: In plasma induced by femtosecond laser, the cyclotron motion of free electrons and the spatial diffusion of plasma have finite temporal evolution characteristics. Even if two laser beams are incident synchronously, the formation and evolution of plasma still need to go through a relaxation process from electron excitation, collision ionization to plasma expansion. During this relaxation process, the external magnetic field continuously acts on the cyclotron motion trajectory of free electrons and the diffusion direction of plasma, thereby achieving active control of the spatial distribution of plasma.

[0030] Furthermore, when there is a preset time delay between the first laser and the second laser, the second laser can intervene when the plasma evolves to a specific stage. By selecting the delay time, the absorption peak window of the second laser is matched with that of the plasma, thereby further improving the energy coupling efficiency of the second laser to the plasma.

[0031] Specifically, in step S2, the short-pulse laser includes a femtosecond laser or a picosecond laser, the wavelength range of the first laser is 200 to 1100 nm, and the pulse width of the first laser is 10 fs to 10 ps.

[0032] In the pulse width range of 10 fs to 10 ps, ​​short-pulse lasers have extremely high peak power density, which can induce the selective generation of free electrons and plasma in the focal region inside transparent hard materials through nonlinear mechanisms such as multiphoton absorption or tunneling ionization.

[0033] Specifically, in step S3, the wavelength of the second laser is 800-3000 nm, and the pulse width of the second laser is 1-100 ns.

[0034] Using the aforementioned wavelength, the second laser beam can penetrate the substrate material with low attenuation to reach the plasma interaction region. The energy of the second laser is concentrated on the plasma region, without generating additional heat accumulation in the solid material around the hole wall, thereby effectively controlling the range of the heat-affected zone and ensuring the surface quality and processing accuracy of the hole wall.

[0035] Specifically, in step S1, the cleaning step includes the following steps: immersing the processing substrate in acetone solution and ultrasonically cleaning for 8-11 minutes; then immersing the processing substrate in anhydrous ethanol solution and ultrasonically cleaning for 8-11 minutes; then immersing the processing substrate in deionized water and ultrasonically cleaning for 8-11 minutes.

[0036] When immersing the substrate in acetone solution, anhydrous ethanol solution, or deionized water, the substrate must be completely submerged. Acetone solution is used to remove organic matter such as grease from the silicon wafer surface, while anhydrous ethanol solution is used to remove any remaining acetone, and deionized water is used to remove any remaining anhydrous ethanol.

[0037] By employing the above cleaning steps, through gradient cleaning with acetone, anhydrous ethanol, and deionized water, combined with the physical vibration of ultrasound, organic contaminants and polar residues on the surface of the substrate can be removed sequentially, preventing impurities on the substrate from affecting subsequent micro-via processing.

[0038] Specifically, in step S1, the processing substrate includes one of glass, sapphire, and silicon carbide.

[0039] Sapphire and silicon carbide are materials with extremely high hardness and strong chemical inertness. Sapphire has high thermal conductivity, while silicon carbide is a wide-bandgap semiconductor. Under the action of ultrafast lasers, sapphire and silicon carbide undergo direct bond breakage and nonlinear absorption. The aforementioned micro-via fabrication method can ensure both processing efficiency and the quality of the micro-via walls.

[0040] The present invention also provides a micro-via processing system based on the coordination of magnetic field and dual laser beams, for realizing the above-mentioned micro-via processing method based on the coordination of magnetic field and dual laser beams, including a first laser source 1, a second laser source 2, an optical path coupling and focusing device, a time delay device 4, a magnetic field generating device 5, and an XYZ axis moving platform 6; The first laser source 1 is used to generate a first laser; the second laser source 2 is used to generate a second laser; the XYZ axis moving platform 6 is provided with a substrate processing area, the substrate processing area is used to place the processing substrate, the magnetic field generating device 5 is disposed on the outer periphery of the substrate processing area, the magnetic field generating device 5 is used to apply a magnetic field to the processing substrate 7; the XYZ axis moving platform 6 is used to drive the processing substrate and the magnetic field generating device 5 to move along the X-axis, Y-axis or Z-axis; The optical path coupling and focusing device is provided with a first laser inlet, a second laser inlet, and a laser outlet. The emitting end of the first laser source 1 is aligned with the first laser inlet, the emitting end of the second laser source 2 is aligned with the input end of the time delay device 4, the output end of the time delay device 4 is aligned with the second laser inlet, and the laser outlet is located above the substrate processing area.

[0041] The magnetic field generator 5 can generate a steady-state magnetic field, a segmented directional magnetic field, a gradient magnetic field, or a dynamic magnetic field according to production needs.

[0042] The time delay device 4 is used to adjust the time relationship between the first laser and the second laser to optimize the coupling state and energy deposition process of the laser-induced plasma.

[0043] The XYZ axis moving platform 6 can drive the processing substrate and the magnetic field generating device 5 to move along the X, Y, or Z axis, and can adjust the position of the processing substrate relative to the first laser and the second laser, thereby selecting the processing position of the micro-via on the processing substrate; in conjunction with the magnetic field strength and direction control of the magnetic field generating device 5, the energy deposition path inside the processing substrate can be controlled and adjusted, forming structures such as high aspect ratio micro-vias, inclined holes, curved holes, continuous curved holes, or curved holes on the processing substrate.

[0044] Specifically, the optical path coupling and focusing device includes a beam combiner 31, a first refracting mirror 32, a second refracting mirror 33, and a focusing lens 34; The beam combiner 31 is disposed at the emitting end of the first laser source 1; the first refractive mirror 32 is disposed at the emitting end of the second laser source 2; the second refractive mirror 33 is disposed above the focusing lens 34, and the second refractive mirror 33 is located on the output end side of the beam combiner 31; the focusing lens 34 is disposed above the substrate processing area; the first refractive mirror 32 is used to refract the second laser to the beam combiner 31, the beam combiner 31 is used to coaxially combine the first laser and the second laser, so that the two laser beams are refracted along the same optical path through the second refractive mirror 33 into the focusing lens 34, and the focusing lens 34 is used to focus the combined first laser and the second laser onto the processing substrate 7.

[0045] The above structure balances independent optical path control with automatic focus rendition. Before beam combining, the first and second lasers propagate along independent optical paths, allowing independent adjustment of parameters such as power, pulse width, and polarization without interference. After coaxial beam combining by the beam combiner 31, the two lasers share the subsequent optical path and focusing lens 34, with the focal position determined by the same focusing lens 34. This eliminates the need for additional calibration of the focal distance between the two beams, fundamentally eliminating the risk of focus drift in the dual-path system. This ensures that the plasma region induced by the first laser remains within the focal spot coverage of the second laser, guaranteeing the stability and repeatability of dual-laser collaborative processing. Since the first laser is sensitive to beam quality, the beam combiner 31 is positioned at the emitting end of the first laser source 1, shortening the independent transmission path of the first laser and reducing the risk of beam quality degradation.

[0046] Furthermore, the first refractive mirror 32 and the second refractive mirror 33 flexibly deflect the optical path, achieving a compact optical path layout. The first refractive mirror deflects the second laser from its emission direction to the incident direction of the beam combiner, and the second refractive mirror deflects the coaxial beam after beam combining to the optical axis of the focusing lens, effectively shortening the total length of the optical path, reducing the space occupied by the device, and at the same time facilitating the reasonable placement of the first laser source 1 and the second laser source 2 in a limited space, reducing the system's requirements for installation space.

[0047] Example 1 A method for fabricating micro-vias based on the synergy of magnetic field and dual laser beams includes the following steps: The substrate was immersed in acetone solution and ultrasonically cleaned for 10 minutes; then immersed in anhydrous ethanol solution and ultrasonically cleaned for 10 minutes; then immersed in deionized water and ultrasonically cleaned for 10 minutes, dried, and fixed on the processing plane; the substrate was made of quartz glass. The first laser is emitted, focused, and applied to the processing substrate, causing the processing substrate to generate a local high-density carrier and plasma region; the first laser is a femtosecond laser with a center wavelength of 800nm ​​and a pulse width of 100fs. After a 1ns delay, a second laser is emitted to irradiate the area illuminated by the first laser; the second laser is an infrared laser with a wavelength of 1064nm. By applying an external magnetic field with a strength of 0.5T to the outer periphery of the substrate and directing the magnetic field perpendicular to the laser propagation direction, an inclined hole can be fabricated on the substrate.

[0048] The through-hole of the processed substrate was sliced ​​and the cross-section of the through-hole was observed under an optical microscope. In Example 1, under the action of an external magnetic field, the micro-through-hole processed on the substrate tilted to one side.

[0049] Example 2 The specific steps of Example 2 are the same as those of Example 1, except that: the first laser is a femtosecond laser with a center wavelength of 800 nm and a pulse width of 120 fs; the second laser is a 1064 nm infrared laser; the substrate is sapphire; and the first and second lasers are emitted simultaneously. During processing, a non-uniform magnetic field is applied to the processing area through a gradient magnetic field coil. The magnetic field strength gradually increases from 0.2 T to 0.8 T along the laser propagation direction, and the magnetic field direction is perpendicular to the laser propagation direction. Combined with the XYZ axis moving platform 6, stepwise feed is achieved in the Z-axis direction (vertical direction) to control the hole depth. At the same time, continuous displacement is applied in the X-axis or Y-axis direction to form a lateral offset trajectory, thereby making the processing path exhibit a curved trend. Under the action of the gradient magnetic field, the plasma diffusion direction deflects with the spatial position. Combined with the continuous movement of the displacement platform, the energy deposition path of the second laser gradually shifts, thereby forming a continuously curved micro-hole structure inside the material.

[0050] The through-hole of the processed substrate was sliced ​​and the cross-section of the through-hole was observed under an optical microscope. Compared with the processing condition without magnetic field, the channel obtained by using a gradient magnetic field in Example 2 has obvious continuous bending characteristics, better hole wall continuity, and reduced heat-affected zone of the processing area.

[0051] The technical principles of the present invention have been described above with reference to specific embodiments. These descriptions are merely for explaining the principles of the invention and should not be construed as limiting the scope of protection of the invention in any way. Based on this explanation, those skilled in the art can readily conceive of other specific embodiments of the invention without inventive effort, and these equivalent variations or substitutions are all included within the scope defined by the claims of this application.

Claims

1. A method for fabricating micro-vias based on the synergy of a magnetic field and dual laser beams, characterized in that, Includes the following steps: S1: Clean and dry the substrate and fix it on the processing plane; S2: The first laser is emitted, focused, and applied to the processing substrate, causing the processing substrate to generate a local high-density carrier and plasma region; the first laser is a short-pulse laser; S3: Emits a second laser to illuminate the area irradiated by the first laser; the second laser is an infrared laser. S4: By applying an external magnetic field to the outer periphery of the substrate, the trajectory of free electrons is changed, thereby altering the energy deposition distribution and the morphology of the processing area, micro-vias can be fabricated on the substrate.

2. The micro-via fabrication method based on the synergy of magnetic field and dual laser beams according to claim 1, characterized in that, In step S4, the magnetic field strength is 0.01 to 10 T.

3. The micro-via fabrication method based on the synergy of magnetic field and dual laser beams according to claim 1, characterized in that, In steps S2 and S3, the time interval between the first laser and the second laser is 0 to 10 ns.

4. The micro-via fabrication method based on the synergy of magnetic field and dual laser beams according to claim 1, characterized in that, In step S2, the short-pulse laser includes a femtosecond laser or a picosecond laser, the wavelength range of the first laser is 200 to 1100 nm, and the pulse width of the first laser is 10 fs to 10 ps.

5. The micro-via fabrication method based on the synergy of magnetic field and dual laser beams according to claim 1, characterized in that, In step S3, the wavelength of the second laser is 800-3000 nm, and the pulse width of the second laser is 1-100 ns.

6. The micro-via fabrication method based on the synergy of magnetic field and dual laser beams according to claim 1, characterized in that, In step S1, the cleaning process includes the following steps: immersing the substrate in acetone solution and ultrasonically cleaning for 8-11 minutes; then immersing the substrate in anhydrous ethanol solution and ultrasonically cleaning for 8-11 minutes; then immersing the substrate in deionized water and ultrasonically cleaning for 8-11 minutes.

7. The method for fabricating micro-vias based on the synergy of a magnetic field and dual laser beams according to claim 1, characterized in that, In step S1, the processing substrate includes one of glass, sapphire, and silicon carbide.

8. A micro-hole processing system based on the synergy of magnetic field and dual laser beams, characterized in that, The method for processing micro-vias based on the coordination of magnetic field and dual laser beams as described in any one of claims 1 to 7 includes a first laser source, a second laser source, an optical path coupling and focusing device, a time delay device, a magnetic field generating device, and an XYZ axis moving platform. The first laser source is used to generate a first laser; the second laser source is used to generate a second laser; the XYZ axis moving platform is provided with a substrate processing area, the substrate processing area is used to place the processing substrate, the magnetic field generating device is disposed on the outer periphery of the substrate processing area, the magnetic field generating device is used to apply a magnetic field to the processing substrate; the XYZ axis moving platform is used to drive the processing substrate and the magnetic field generating device to move along the X-axis, Y-axis or Z-axis; The optical path coupling and focusing device is provided with a first laser inlet, a second laser inlet, and a laser outlet. The emitting end of the first laser source is aligned with the first laser inlet, the emitting end of the second laser source is aligned with the input end of the time delay device, the output end of the time delay device is aligned with the second laser inlet, and the laser outlet is located above the substrate processing area.

9. A micro-hole processing system based on the synergy of magnetic field and dual laser beams according to claim 8, characterized in that, The optical path coupling and focusing device includes a beam combiner, a first refracting mirror, a second refracting mirror, and a focusing lens; The beam combiner is disposed at the emitting end of the first laser source; the first refractor is disposed at the emitting end of the second laser source; the second refractor is disposed above the focusing lens, and the second refractor is located on one side of the output end of the beam combiner; the focusing lens is disposed above the substrate processing area; the first refractor is used to refract the second laser to the beam combiner, the beam combiner is used to coaxially combine the first laser and the second laser, so that the two laser beams are refracted along the same optical path through the second refractor into the focusing lens, and the focusing lens is used to focus the combined first laser and the second laser onto the processing substrate.

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