Semiconductor device and method of manufacturing the same, memory system
CN122934778APending Publication Date: 2026-10-16YANGTZE MEMORY TECH CO LTD
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Patent Information
- Application Number
- CN202510431121.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-08
- Publication Date
- 2026-10-16
AI Technical Summary
Benefits of technology
[0004] This disclosure provides a method for fabricating a semiconductor device, a semiconductor device, and a memory system that can at least partially solve the problems described above or other problems in the art.
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Abstract
Embodiments of the present disclosure provide a semiconductor device and a method of manufacturing, a memory system. The semiconductor device includes a semiconductor body and a gate structure. The semiconductor body extends along a first direction. The gate structure is located at least on one side of the semiconductor body in a second direction, wherein the second direction intersects the first direction. The gate structure includes a first conductive layer and a second conductive layer, the first conductive layer extends along the first direction, and the second conductive layer is located on a first side of the first conductive layer facing the semiconductor body, a second side of the first conductive layer facing away from the semiconductor body, and a third side of the first conductive layer in the first direction.
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