Semiconductor device, in-memory computing system, and electronic device
CN122934820APending Publication Date: 2026-10-16BEIJING ZHICUN (WITIN) TECH CORP LTD
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Patent Information
- Application Number
- CN202610433082.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2025-04-02
- Filing Date
- 2026-04-02
- Publication Date
- 2026-10-16
AI Technical Summary
Technical Problem
[0002]目前的芯片结构中需要进行数据或者信令传输的裸片(die)利用基板(或中介板)进行2D或2.5D封装,这种结构在应用到裸片间大规模高速数据传输的场景时存在明显的性能瓶颈,因此,目前的芯片性能还有待进一步提升
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Abstract
A semiconductor device, a compute-in-memory system and an electronic device are disclosed. The semiconductor device includes a first die group, the first die group including: a first die including a first substrate and a first circuit layer, the first circuit layer formed in a first direction of the first substrate; a first bonding layer formed on the first circuit layer; a second die stacked on the first bonding layer along the first direction, and the second die including a second circuit layer; and a first intra-group interconnect structure connecting the first circuit layer and the second circuit layer. The design mechanism of the semiconductor device of the present application can make the chip have faster transmission speed and lower energy loss, thereby reducing the power consumption of the chip.
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