Semiconductor device and method of manufacturing the same

CN122934852APending Publication Date: 2026-10-16NEXCHIP SEMICON CO LTD
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Patent Information

Application Number
CN202611416320.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-09-14
Publication Date
2026-10-16

AI Technical Summary

Technical Problem

相关技术中，在沟槽较深时，选择性外延填充过程容易在沟槽中提前封口，导致沟槽中的填充结构中有空洞（Void）

Benefits of technology

[0015] A method for manufacturing a semiconductor device according to an embodiment of this application includes: providing a substrate; forming a first semiconductor layer having a first conductivity type on the substrate; forming a first trench in the first semiconductor layer; performing a first selective epitaxial filling in the first trench, epitaxially growing a first filling layer having a second conductivity type at the bottom of the first trench, the first filling layer filling a portion of the first trench; performing a second selective epitaxial filling in the first trench, epitaxially growing a second filling layer having a second conductivity type in the first trench, the second filling layer and the first filling layer filling at least a portion of the first trench. In this embodiment, an unexpected effect is that during the first selective epitaxial filling, silicon growth is in a bottom-up mode, with almost no growth on the sidewalls of the first trench, and the growth rate of the first selective epitaxial filling on the sidewalls of the first trench is lower than the growth rate of the second selective epitaxial filling on the sidewalls of the first trench. After the first selective epitaxial filling, the first filling layer fills a portion of the first trench, reducing the actual remaining depth of the first trench and lowering the difficulty of subsequent filling. When using the second selective epitaxial filling with a higher epitaxial growth rate, it is less likely that the first trench will prematurely close, preventing voids from forming in the filling structure of the first trench. This facilitates subsequent filling of the trench using the second selective epitaxial filling with a higher epitaxial growth rate. In this embodiment, the epitaxial growth rate of the second selective epitaxial filling is greater than that of the first selective epitaxial filling. An unexpected effect is that even if the first trench has a high aspect ratio (i.e., the first trench is deep), it can still improve the overall efficiency of completely filling the first trench while mitigating the problem of premature closure during filling.

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Abstract

The application relates to the technical field of semiconductor devices, and discloses a semiconductor device and a manufacturing method thereof. The manufacturing method comprises the following steps: forming a first semiconductor layer with a first conductive type on a substrate; forming a first groove in the first semiconductor layer; performing first selective epitaxy filling in the first groove, and epitaxially growing a first filling layer with a second conductive type at the bottom of the first groove, wherein the first filling layer fills part of the first groove; performing second selective epitaxy filling in the first groove, and epitaxially growing a second filling layer with the second conductive type in the first groove, wherein the second filling layer fills at least part of the first groove together with the first filling layer, and the growth rate of the first selective epitaxy filling on the sidewall of the first groove is smaller than the growth rate of the second selective epitaxy filling on the sidewall of the first groove. According to the manufacturing method, the problem of early sealing during groove filling can be relieved.
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