Nitride semiconductor device and method for manufacturing nitride semiconductor device

CN122934856APending Publication Date: 2026-10-16WAVETEK MICROELECTRONICS
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Patent Information

Application Number
CN202511503574.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2025-04-02
Filing Date
2025-10-21
Publication Date
2026-10-16

AI Technical Summary

Technical Problem

[0004]根据前述，本申请提供一种氮化物半导体装置及氮化物半导体装置的制造方法，以解决GaN HEMT的误开启的问题

Benefits of technology

[0008] Based on the foregoing, this application provides a method for manufacturing a nitride semiconductor device, comprising: sequentially forming a channel layer, a spacer layer, and a polarization layer on a substrate; partially etching the channel layer, spacer layer, and polarization layer to form a platform structure, wherein the platform structure exposes the channel layer; forming a first passivation layer, a drain, and a source on the platform structure and on both sides of the platform structure, wherein the drain and source are located on the first passivation layer and extend from the first passivation layer to the channel layer; forming a second passivation layer on the first passivation layer and partially etching the second passivation layer to have an opening, wherein the opening extends to the spacer layer; forming a gate insulating layer on the second passivation layer and in the opening; and forming a gate on the gate insulating layer.

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Abstract

A nitride semiconductor device includes a substrate, a channel layer, a first polarization layer, a polarization control layer, and a second polarization layer. The channel layer is disposed on the substrate, the first polarization layer is disposed on the channel layer, the polarization control layer is disposed on the first polarization layer, and the second polarization layer is disposed on the polarization control layer. The lattice constant of the first polarization layer and the lattice constant of the second polarization layer are smaller than the lattice constant of the polarization control layer. The two-dimensional electron gas of the channel layer is adjusted by the configuration of the first polarization layer, the polarization control layer, and the second polarization layer.
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