Oxide thin film transistor, method of manufacturing the same, and display device

By employing stacked active layers in oxide thin-film transistors and utilizing different fabrication processes to form stacked structures with different carrier concentrations and stability, the problems of insufficient carrier mobility and stability are solved, achieving higher on-state current and stability, making it suitable for high-resolution and high-refresh-rate display devices.

CN122934869APending Publication Date: 2026-10-16BOE TECHNOLOGY GROUP CO LTD +1
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Patent Information

Application Number
CN202510428879.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-04-07
Publication Date
2026-10-16

AI Technical Summary

Technical Problem

Existing oxide thin-film transistors have shortcomings in terms of carrier mobility and stability, especially in high-resolution and high-refresh-rate display devices, and the fabrication of stacked active layers is costly and difficult.

Method used

The first and second active layers are stacked together. They contain the same elements but have different densities and oxygen vacancy contents. By using different preparation process conditions, stacked structures with different carrier concentrations and stability are formed, which reduces the difficulty and cost of preparation. The conduction of the device is controlled by adjusting the on-state voltage.

Benefits of technology

It improves the carrier mobility and stability of oxide thin-film transistors, reduces fabrication costs, and achieves higher on-state current and stability, making it suitable for high-resolution and high-refresh-rate display devices.

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Abstract

Embodiments of the present disclosure provide an oxide thin film transistor, a preparation method thereof and a display device. The present disclosure relates to the technical field of thin film transistors and is used for improving the on-state current and stability of the oxide thin film transistor. The oxide thin film transistor comprises a gate, an active layer, a source and a drain. The active layer comprises a first active layer and a second active layer which are arranged in a stacked manner, and the first active layer is closer to the gate than the second active layer. The first active layer and the second active layer comprise the same metal elements, and both comprise at least two of indium element, zinc element, gallium element, tin element, aluminum element, titanium element, tantalum element, tungsten element and molybdenum element. The first active layer and the second active layer further comprise oxygen element, and the crystallization states of the first active layer and the second active layer are different, and / or the contents of oxygen vacancies of the first active layer and the second active layer are different.
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